公开(公告)号：US20240074324A1

公开(公告)日：2024-02-29

申请号：US18456397

申请日：2023-08-25

Applicant: Kioxia Corporation

Inventor： Rina NOMOTO ,  Hiroyuki KANAYA ,  Yusuke MUTO ,  Takeshi IWASAKI

IPC: H10N50/10 ,  G11C11/16 ,  H10B61/00 ,  H10N50/85

CPC classification number: H10N50/10 ,  G11C11/161 ,  H10B61/00 ,  H10N50/85 ,  G11C11/1673 ,  G11C11/1675

Abstract: According to one embodiment, a magnetic device includes a layered body with a first magnetic layer, a second magnetic layer, and a first non-magnetic layer between the first magnetic body and the second magnetic body. A side wall layer covers at least a side wall of the first non-magnetic body of the layered body and includes at least one first substance chosen from silicon oxide, zirconium oxide, aluminum oxide, aluminum nitride, and silicon nitride, and at least one second substance chosen from arsenic, tellurium, antimony, bismuth, and germanium.

公开(公告)号：US20230309428A1

公开(公告)日：2023-09-28

申请号：US17899914

申请日：2022-08-31

Applicant: KIOXIA CORPORATION

Inventor： Kenji FUKUDA ,  Rina NOMOTO ,  Hiroyuki KANAYA ,  Masahiko NAKAYAMA ,  Hideyuki SUGIYAMA

IPC: H01L45/00 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16 ,  H01L27/22 ,  H01L27/24

CPC classification number: H01L45/146 ,  H01L45/1286 ,  H01L45/1616 ,  H01L45/1675 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  G11C11/161 ,  H01L27/222 ,  H01L27/2463

Abstract: A storage device includes a memory cell including a variable resistance element and a switching element having snapback current-voltage characteristics. The switching element includes a first conductive layer in contact with the variable resistance element, a second conductive layer, and a switching layer provided between the first conductive layer and the second conductive layer. The switching layer includes at least one switching member and a first insulating layer having a thermal conductivity higher than 1.4 W/m/K. A cross-sectional area of the switching member at a connection surface between the switching layer and the first conductive layer and a cross-sectional area of the switching member at a connection surface between the switching layer and the second conductive layer are each smaller than a cross-sectional area at a connection surface between the first conductive layer and the variable resistance element.

公开(公告)号：US20240298549A1

公开(公告)日：2024-09-05

申请号：US18592306

申请日：2024-02-29

Applicant: Kioxia Corporation

Inventor： Rina NOMOTO ,  Hideyuki SUGIYAMA ,  Daisuke WATANABE ,  Bao NGUYEN VIET ,  Youngmin EEH ,  Masaru TOKO ,  Taiga ISODA

IPC: H10N50/85 ,  H10B61/00 ,  H10N50/20

CPC classification number: H10N50/85 ,  H10B61/10 ,  H10N50/20

Abstract: A magnetic device includes a first magnetic layer, a second magnetic layer, and a nonmagnetic layer between the first and second magnetic layers and including: a first layer in contact with the first magnetic layer and including a magnesium oxide, a second layer in contact with the second magnetic layer and including a magnesium oxide, and a third layer between the first and second layers and including a scandium nitride.

公开(公告)号：US20240215467A1

公开(公告)日：2024-06-27

申请号：US18476635

申请日：2023-09-28

Applicant: Kioxia Corporation

Inventor： Hiroki KAWAI ,  Takeshi IWASAKI ,  Katsuyoshi KOMATSU ,  Rina NOMOTO ,  Zhu QI ,  Takayuki SASAKI

IPC: H10N70/00 ,  G11C5/06 ,  H10B63/00

CPC classification number: H10N70/8828 ,  G11C5/06 ,  H10B63/80 ,  H10N70/883

Abstract: A memory device of embodiments includes a memory cell including: a first conductive layer; a second conductive layer; a third conductive layer provided between the first conductive layer and the second conductive layer; a variable resistance layer provided between the first conductive layer and the third conductive layer; and a switching layer provided between the third conductive layer and the second conductive layer. The switching layer contains antimony (Sb), a second element, adn an oxide of a first element. The first element is at least one element selected from a group consisting of zirconium (Zr), hafnium (Hf), yttrium (Y), tantalum (Ta), lanthanum (La), cerium (Ce), magnesium (Mg), and titanium (Ti). The second element is at least one element selected from a group consisting of aluminum (Al), zinc (Zn), and gallium (Ga).

公开(公告)号：US20240215459A1

公开(公告)日：2024-06-27

申请号：US18476628

申请日：2023-09-28

Applicant: Kioxia Corporation

Inventor： Takeshi IWASAKI ,  Yosuke MATSUSHIMA ,  Makoto ONIZAKI ,  Katsuyoshi KOMATSU ,  Masakazu GOTO ,  Hiroki KAWAI ,  Rina NOMOTO ,  Kenta CHOKAWA ,  Zhu QI ,  Tadaomi DAIBOU

IPC: H10N50/85 ,  H10B61/00 ,  H10N50/20

CPC classification number: H10N50/85 ,  H10B61/00 ,  H10N50/20

Abstract: A memory device of embodiments includes a memory cell including: a first conductive layer; a second conductive layer; a third conductive layer provided between the first conductive layer and the second conductive layer; a variable resistance layer provided between the first conductive layer and the third conductive layer; and a switching layer provided between the third conductive layer and the second conductive layer. The switching layer contains an oxide of a first element, which is at least one element selected from a group consisting of zirconium, yttrium, tantalum, lanthanum, cerium, titanium, hafnium, and magnesium, and a compound of a second element that is at least one element selected from a group consisting of zinc, tin, gallium, indium, and bismuth and a third element that is at least one element selected from a group consisting of tellurium, sulfur, and selenium.

公开(公告)号：US20240090344A1

公开(公告)日：2024-03-14

申请号：US18178469

申请日：2023-03-03

Applicant: Kioxia Corporation

Inventor： Takeo KOIKE ,  Rina NOMOTO ,  Hiroyuki KANAYA ,  Masahiko NAKAYAMA ,  Daisuke WATANABE

IPC: H10N50/85 ,  H10B61/00 ,  H10N50/20

CPC classification number: H10N50/85 ,  H10B61/00 ,  H10N50/20 ,  H01F10/329

Abstract: A magnetic storage device includes first and second magnetic layers and a non-magnetic layer, where the non-magnetic layer includes a first oxide layer containing magnesium and oxygen, a second oxide layer containing magnesium and oxygen, a third oxide layer containing zinc and oxygen, a fourth oxide layer containing a first predetermined element and oxygen, and a fifth oxide layer containing a second predetermined element and oxygen, and a crystal structure of an oxide of the first predetermined element and a crystal structure of an oxide of the second predetermined element are each a rock salt structure. The first predetermined element and the second predetermined element each have an oxide formation free energy greater than an oxide formation free energy of zinc, and the oxide of the first predetermined element and the oxide of the second predetermined element each have a bandgap narrower than a bandgap of an oxide of magnesium.