公开(公告)号：US12165712B2

公开(公告)日：2024-12-10

申请号：US18362221

申请日：2023-07-31

Applicant: KIOXIA CORPORATION

Inventor： Tsukasa Tokutomi ,  Masanobu Shirakawa ,  Marie Takada ,  Shohei Asami ,  Masamichi Fujiwara

IPC: G11C16/26 ,  G06F3/06 ,  G11C16/04 ,  G11C11/56 ,  G11C16/08 ,  H10B43/27 ,  H10B43/35

Abstract: According to one embodiment, a memory system includes a semiconductor memory and a controller. The semiconductor memory includes first to fourth word lines and first to fourth memory cells. The controller is configured to issue first and second instructions. The controller is further configured to execute a first operation to obtain a first read voltage based on a threshold distribution of the first memory cell, and a second operation to read data from the second memory cell.

公开(公告)号：US11537465B2

公开(公告)日：2022-12-27

申请号：US17174399

申请日：2021-02-12

Applicant: KIOXIA CORPORATION

Inventor： Tsukasa Tokutomi ,  Masanobu Shirakawa ,  Marie Takada ,  Masamichi Fujiwara ,  Kazumasa Yamamoto ,  Naoaki Kokubun ,  Tatsuro Hitomi ,  Hironori Uchikawa

IPC: H03M13/00 ,  G06F11/10 ,  H03M13/11 ,  H03M13/37 ,  H03M13/29 ,  H03M13/15

Abstract: In general, according to an embodiment, a memory system includes a memory device including a memory cell; and a controller. The controller is configured to: receive first data from the memory cell in a first data reading; receive second data from the memory cell in a second data reading that is different from the first data reading; convert a first value that is based on the first data and the second data, to a second value in accordance with a first relationship; and convert the first value to a third value in accordance with a second relationship that is different from the first relationship.

公开(公告)号：US11892907B2

公开(公告)日：2024-02-06

申请号：US17984309

申请日：2022-11-10

Applicant: Kioxia Corporation

Inventor： Tsukasa Tokutomi ,  Masanobu Shirakawa ,  Marie Takada ,  Masamichi Fujiwara ,  Kazumasa Yamamoto ,  Naoaki Kokubun ,  Tatsuro Hitomi ,  Hironori Uchikawa

IPC: H03M13/00 ,  G06F11/10 ,  H03M13/11 ,  H03M13/37 ,  H03M13/29 ,  H03M13/15

CPC classification number: G06F11/1068 ,  G06F11/1012 ,  G06F11/1048 ,  H03M13/1105 ,  H03M13/1108 ,  H03M13/1111 ,  H03M13/152 ,  H03M13/2906 ,  H03M13/3715 ,  H03M13/6505

Abstract: In general, according to an embodiment, a memory system includes a memory device including a memory cell; and a controller. The controller is configured to: receive first data from the memory cell in a first data reading; receive second data from the memory cell in a second data reading that is different from the first data reading; convert a first value that is based on the first data and the second data, to a second value in accordance with a first relationship; and convert the first value to a third value in accordance with a second relationship that is different from the first relationship.

公开(公告)号：US11763893B2

公开(公告)日：2023-09-19

申请号：US17568336

申请日：2022-01-04

Applicant: Kioxia Corporation

Inventor： Tsukasa Tokutomi ,  Masanobu Shirakawa ,  Marie Takada ,  Shohei Asami ,  Masamichi Fujiwara

IPC: G11C16/26 ,  G11C16/04 ,  G06F3/06 ,  G11C16/08 ,  G11C11/56 ,  H10B43/27 ,  H10B43/35

CPC classification number: G11C16/26 ,  G06F3/0604 ,  G06F3/0659 ,  G06F3/0679 ,  G11C16/0483 ,  G11C11/5671 ,  G11C16/08 ,  H10B43/27 ,  H10B43/35

Abstract: According to one embodiment, a memory system includes a semiconductor memory and a controller. The semiconductor memory includes first to fourth word lines and first to fourth memory cells. The controller is configured to issue first and second instructions. The controller is further configured to execute a first operation to obtain a first read voltage based on a threshold distribution of the first memory cell, and a second operation to read data from the second memory cell.