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    Memory system
    3.
    发明授权
    Memory system 有权

    公开(公告)号：US11626167B2

    公开(公告)日：2023-04-11

    申请号：US17131026

    申请日：2020-12-22

    Applicant: KIOXIA CORPORATION

    Inventor： Masanobu Shirakawa ,  Tsukasa Tokutomi ,  Marie Takada

    IPC: G11C16/26 ,  G11C11/56 ,  G11C16/04 ,  H01L27/11582 ,  H01L27/1157

    Abstract: According to one embodiment, a memory system includes a semiconductor memory device and a controller. The device includes a plurality of memory cells capable of storing at least first to third data and a word line coupled to the plurality of memory cells. The first data is determined by a first read operation including a first read level. The second data is determined by a second read operation including a second read level. The third data is determined by a third read operation including a third read level. The controller controls the semiconductor memory device to perform a forth read operation including the first and second read levels in a search operation for first to third read voltages corresponding to the first to third read levels, respectively.

    Method of controlling a semiconductor memory
    4.
    发明授权
    Method of controlling a semiconductor memory 有权

    公开(公告)号：US11315643B2

    公开(公告)日：2022-04-26

    申请号：US16892817

    申请日：2020-06-04

    Applicant: KIOXIA CORPORATION

    Inventor： Tsukasa Tokutomi ,  Masanobu Shirakawa

    IPC: G11C16/34 ,  G11C11/56 ,  G11C16/26 ,  G06F11/10 ,  G11C29/52 ,  G11C16/10 ,  G11C16/04

    Abstract: According to one embodiment, a controller is configured to write four-bit data in each of memory cells, and read first data item from the memory cells through application of a first voltage to a word line. The controller is configured to read second data items by repeating a first operation of reading data including data of respective first bits of the memory cells through application of two voltages to the word line at different timings while changing the two voltages in each first operation from the two voltages in another first operation. The controller is configured to mask part of each of the second data items using the first data.

    Memory system
    5.
    发明授权
    Memory system 有权

    公开(公告)号：US11211138B2

    公开(公告)日：2021-12-28

    申请号：US17003937

    申请日：2020-08-26

    Applicant: KIOXIA CORPORATION

    Inventor： Tsukasa Tokutomi ,  Kiwamu Watanabe ,  Yuko Noda

    IPC: G11C29/50 ,  G11C29/42 ,  G11C29/44 ,  G11C16/08 ,  G11C16/30 ,  G11C16/10 ,  G11C16/26

    Abstract: A memory system includes a memory chip and a memory controller. The memory chip has a first plane and a second plane. A threshold voltage corresponding to multiple bit data is set for each of the memory cells. The memory controller causes the memory chip to execute a first read process on the first plane and the second plane in parallel by using a plurality of first read voltages different from each other for the first plane and the second plane. The first read process being a process of reading a data group of one bit among the multiple bits by using the first read voltages. The memory controller subsequently adjusts the voltage levels of the first read voltages on the basis of the data group read from the memory cells of the first plane and the data group read from the memory cells of the second plane.

    Multi-bit memory system with adaptive read voltage controller
    8.
    发明授权
    Multi-bit memory system with adaptive read voltage controller 有权

    公开(公告)号：US11367489B2

    公开(公告)日：2022-06-21

    申请号：US17126649

    申请日：2020-12-18

    Applicant: KIOXIA CORPORATION

    Inventor： Tsukasa Tokutomi ,  Masanobu Shirakawa ,  Marie Takada

    IPC: G11C16/26 ,  G11C16/34 ,  G11C16/04 ,  G11C11/56

    Abstract: According to an embodiment, a semiconductor memory, on receiving a first command, applies a voltage within a first range and a voltage within a second range to a word line and reads a first bit from a memory cell, and, on receiving a second command, applies a voltage within a third range to the word line and reads a second bit from the memory cell. The controller issues the first command a plurality of times and changes the voltages to be applied to the word line within the first range and the second range in accordance with the plurality of first commands, specifies a first and second voltage within the first and the second range, respectively, and estimates a third voltage within the third range. The voltage applied to read the second bit is the estimated third voltage.

    Memory system and method for controlling semiconductor memory
    10.
    发明授权
    Memory system and method for controlling semiconductor memory 有权

    公开(公告)号：US12300328B2

    公开(公告)日：2025-05-13

    申请号：US18177877

    申请日：2023-03-03

    Applicant: Kioxia Corporation

    Inventor： Masahiro Saito ,  Kiwamu Watanabe ,  Yuko Noda ,  Tsukasa Tokutomi ,  Yoshiki Takai

    IPC: G11C7/00 ,  G11C11/56 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26

    Abstract: A memory controller receives first, second, and third data by first, second, and third reads, specifying a first address, and respectively specifying first, second, and third read voltages higher in this order. The controller instructs a memory to execute a fourth read specifying a fourth read voltage lower than the first read voltage and the first address when a first difference between a first-value-bit count of the first data and an expected value is smaller than a second difference between a first-value-bit count of the third data and the expected value. The memory controller instructs the memory to execute a fifth read specifying a fifth read voltage higher than the third read voltage and the first address when the first difference is larger than the second difference.

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