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公开(公告)号：US12132040B2
公开(公告)日：2024-10-29
申请号：US18330258
申请日：2023-06-06
Applicant: Kioxia Corporation
Inventor： Nobuaki Okada , Tetsuaki Utsumi
CPC classification number: H01L25/18 , G11C16/30 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/09 , G11C16/0483 , H01L2224/03452 , H01L2224/0557 , H01L2224/05572 , H01L2224/08145 , H01L2224/09133 , H01L2224/09134 , H01L2224/09177 , H01L2224/09181 , H01L2924/1431 , H01L2924/14511
Abstract: A semiconductor storage device includes first and second chips and first and second power supply electrodes. The first chip includes conductive layers arranged in a first direction, a semiconductor pillar extending in the first direction and facing the conductive layers, first contacts extending in the first direction and connected to the conductive layers, second contacts extending in the first direction and connected to a first power supply electrode, third contacts extending in the first direction, facing the second contacts in a direction crossing the first direction, and connected to the second power supply electrode, and first bonding electrodes connected to the first contacts. The second chip includes a semiconductor substrate, transistors provided on the semiconductor substrate, fourth contacts connected to the transistors, and second bonding electrodes connected to the fourth contacts. The first and second chips are bonded together so that respective first and second bonding electrodes are connected together.
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公开(公告)号：US11710727B2
公开(公告)日：2023-07-25
申请号：US17003694
申请日：2020-08-26
Applicant: KIOXIA CORPORATION
Inventor： Nobuaki Okada , Tetsuaki Utsumi
CPC classification number: H01L25/18 , G11C16/30 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/09 , G11C16/0483 , H01L2224/03452 , H01L2224/0557 , H01L2224/05572 , H01L2224/08145 , H01L2224/09133 , H01L2224/09134 , H01L2224/09177 , H01L2224/09181 , H01L2924/1431 , H01L2924/14511
Abstract: A semiconductor storage device includes first and second chips and first and second power supply electrodes. The first chip includes conductive layers arranged in a first direction, a semiconductor pillar extending in the first direction and facing the conductive layers, first contacts extending in the first direction and connected to the conductive layers, second contacts extending in the first direction and connected to a first power supply electrode, third contacts extending in the first direction, facing the second contacts in a direction crossing the first direction, and connected to the second power supply electrode, and first bonding electrodes connected to the first contacts. The second chip includes a semiconductor substrate, transistors provided on the semiconductor substrate, fourth contacts connected to the transistors, and second bonding electrodes connected to the fourth contacts. The first and second chips are bonded together so that respective first and second bonding electrodes are connected together.
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公开(公告)号：US11881465B2
公开(公告)日：2024-01-23
申请号：US17183809
申请日：2021-02-24
Applicant: KIOXIA CORPORATION
Inventor： Nobuaki Okada , Toshiki Hisada
CPC classification number: H01L24/08 , G11C16/0483 , G11C16/08 , G11C16/24 , H01L25/0657 , H01L25/18 , H10B41/27 , H10B43/27 , H01L2224/08145 , H01L2924/1431 , H01L2924/14511
Abstract: A semiconductor storage device includes first and second chips. The first chip includes a first semiconductor substrate, first conductive layers arranged in a first direction and extending in a second direction, a semiconductor column extending in the first direction and facing the first conductive layers, a first charge storage film formed between the first conductive layers and the semiconductor column, a plurality of first transistors on the first semiconductor substrate, and first bonding electrodes electrically connected to a portion of the plurality of first transistors. The second chip includes a second semiconductor substrate, a plurality of second transistors on the second semiconductor substrate, and second bonding electrodes electrically connected to a portion of the plurality of second transistors, and bonded to the first bonding electrodes. A thickness of the second semiconductor substrate in the first direction is smaller than a thickness of the first semiconductor substrate in the first direction.
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公开(公告)号：US11705443B2
公开(公告)日：2023-07-18
申请号：US17012111
申请日：2020-09-04
Applicant: Kioxia Corporation
Inventor： Hiroshi Maejima , Katsuaki Isobe , Nobuaki Okada , Hiroshi Nakamura , Takahiro Tsurudo
CPC classification number: H01L25/18 , G11C16/0483 , G11C16/08 , G11C16/26 , H01L24/08 , H01L25/0657 , H01L2224/08145 , H01L2924/1431 , H01L2924/14511
Abstract: A semiconductor memory device according to an embodiment includes a substrate, a first memory cell, a first bit line, a first word line, a first transistor, and a second transistor. The first memory cell is provided above the substrate. The first bit line extends in a first direction. The first bit line is coupled to the first memory cell. The first word line extends in a second direction intersecting the first direction. The first word line is coupled to the first memory cell. The first transistor is provided on the substrate. The first transistor is coupled to the first bit line. The second transistor is provided below the first memory cell and on the substrate. The second transistor is coupled to the first word line.
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