公开(公告)号：US12053805B2

公开(公告)日：2024-08-06

申请号：US16280874

申请日：2019-02-20

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Koei Kuribayashi ,  Kenji Kameda ,  Tsukasa Kamakura ,  Takeo Hanashima ,  Hiroaki Hiramatsu ,  Shinya Ebata ,  Hiroto Yamagishi ,  Sadao Hisakado ,  Takafumi Sasaki ,  Takatomo Yamaguchi ,  Shuhei Saido

IPC: C23C16/44 ,  B08B5/00 ,  C23C16/34 ,  C23C16/56 ,  H01L21/02

CPC classification number: B08B5/00 ,  C23C16/345 ,  C23C16/4405 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/02211

Abstract: There is provided a technique that cleans a member in a process container by performing a cycle a predetermined number of times, the cycle including: (a) separately supplying a cleaning gas and an additive gas that reacts with the cleaning gas, respectively, from any two supply parts among at least three supply parts into the process container after processing a substrate; and (b) separately supplying the cleaning gas and the additive gas, respectively, from any two supply parts among the at least three supply parts into the process container, wherein at least one selected from the group of the cleaning gas and the additive gas is supplied from different supply parts in (a) and (b).

公开(公告)号：US20240359218A1

公开(公告)日：2024-10-31

申请号：US18768321

申请日：2024-07-10

Applicant: Kokusai Electric Corporation

Inventor： Koei KURIBAYASHI ,  Kenji Kameda ,  Tsukasa Kamakura ,  Takeo Hanashima ,  iroaki Hiramatsu ,  Shinya Ebata ,  Hiroto Yamagishi ,  Sadao Hisakado ,  Takafumi Sasaki ,  Takatomo Yamaguchi ,  Shuhei Saido

IPC: B08B5/00 ,  C23C16/34 ,  C23C16/44 ,  C23C16/56 ,  H01L21/02

CPC classification number: B08B5/00 ,  C23C16/345 ,  C23C16/4405 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/02211

Abstract: There is provided a technique that cleans a member in a process container by performing a cycle a predetermined number of times, the cycle including: (a) separately supplying a cleaning gas and additive gas that reacts with the cleaning gas, respectively, from first and second supply parts among at least three supply parts into the process container, and (b) separately supplying the cleaning and additive gases, respectively, from the second and first supply parts into the process container. (A) and (b) include stopping the supply of the cleaning and additive gases into the process container and exhausting the process container's interior. In at least one selected from the group of (a) and (b) an inert gas is supplied from each of the at least three supply parts at a same flow rate, after the supply of the cleaning and additive gases is stopped and before the process container is exhausted.

公开(公告)号：US12065741B2

公开(公告)日：2024-08-20

申请号：US17745496

申请日：2022-05-16

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Mikio Ohno ,  Atsushi Umekawa ,  Takeo Hanashima ,  Hiroaki Hiramatsu

IPC: H01L21/67 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C23C16/52 ,  H01L21/02 ,  H01L21/673

CPC classification number: C23C16/52 ,  C23C16/345 ,  C23C16/44 ,  C23C16/45563 ,  C23C16/463 ,  H01L21/02271 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67393

Abstract: There is provided a gas supply system including a supplying part connected to a reaction vessel and a blocking part provided at an upstream side of the supplying part and directly connected to the supplying part without providing a pipe between the blocking part and the supplying part. The gas supply system further including a switching part provided at an upstream side of the blocking part and configured to supply a gas into the reaction vessel in cooperation with the blocking part and an exhaust part configured to exhaust an inside of a pipe provided between the switching part and the blocking part.

公开(公告)号：US11952664B2

公开(公告)日：2024-04-09

申请号：US18077607

申请日：2022-12-08

Applicant: Kokusai Electric Corporation

Inventor： Hidenari Yoshida ,  Takeo Hanashima ,  Hiroaki Hiramatsu

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/44 ,  C23C16/52 ,  H01L21/02 ,  H01L21/67

CPC classification number: C23C16/45578 ,  C23C16/402 ,  C23C16/4412 ,  C23C16/45502 ,  C23C16/52 ,  H01L21/02123 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/67248

Abstract: Described herein is a technique capable of improving the uniformity of the film formation among the substrates. According to the technique described herein, there is provided a configuration including: a reaction tube having a process chamber where a plurality of substrates are processed; a buffer chamber protruding outward from the reaction tube and configured to supply a process gas to the process chamber, the buffer chamber including: a first nozzle chamber where a first nozzle is provided; and a second nozzle chamber where a second nozzle is provided; an opening portion provided at a lower end of an inner wall of the reaction tube facing the buffer chamber; and a shielding portion provided at a communicating portion of the opening portion between the second nozzle chamber and the process chamber.

公开(公告)号：US11923188B2

公开(公告)日：2024-03-05

申请号：US17025388

申请日：2020-09-18

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Takeo Hanashima

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  H01L21/67

CPC classification number: H01L21/02123 ,  C23C16/455 ,  C23C16/4584 ,  H01L21/67161

Abstract: There is included providing a substrate in a process chamber; and forming a film on the substrate in the process chamber by supplying an inert gas from a first supplier, supplying a first processing gas from a second supplier, and supplying an inert gas from a third supplier to the substrate, the third supplier being installed at an opposite side of the first supplier with respect to a straight line that passes through the second supplier and a center of the substrate and is interposed between the first supplier and the third supplier, to the substrate, wherein in the film, a substrate in-plane film thickness distribution of the film is adjusted by controlling a balance between a flow rate of the inert gas supplied from the first supplier and a flow rate of the inert gas supplied from the third supplier.

公开(公告)号：US11814725B2

公开(公告)日：2023-11-14

申请号：US16431339

申请日：2019-06-04

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Koei Kuribayashi ,  Takeo Hanashima ,  Hiroyuki Miyagishi ,  Hiroto Yamagishi

IPC: C23C16/44 ,  H01L21/02

CPC classification number: C23C16/4405 ,  H01L21/0217

Abstract: There is provided a technique of cleaning an interior of a supply part by performing a cycle a predetermined number of times, the cycle including: (a) supplying a first gas, which is one of a cleaning gas and an additive gas that reacts with the cleaning gas, from the supply part toward an interior of a process container in which a substrate has been processed by supplying a processing gas from the supply part to the substrate; and (b) supplying a second gas, which is the other one of the cleaning gas and the additive gas and is different from the first gas, from the supply part toward the interior of the process container in a state in which a part of the first gas remains in the supply part after supply of the first gas is stopped.

公开(公告)号：US11753716B2

公开(公告)日：2023-09-12

申请号：US17139262

申请日：2020-12-31

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Hiroki Hatta ,  Takeo Hanashima ,  Koei Kuribayashi ,  Shin Sone

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  H01L21/02

CPC classification number: C23C16/45527 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  H01L21/0228 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/02211

Abstract: There is provided a technique that includes forming a film on at least one substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) performing a first set a number of times, the first set including non-simultaneously performing: supplying a precursor to the at least one substrate from at least one first ejecting hole of a first nozzle arranged along a substrate arrangement direction of a substrate arrangement region where the at least one substrate is arranged; and supplying a reactant to the at least one substrate; and (b) performing a second set a number of times, the second set including non-simultaneously performing: supplying the precursor to the at least one substrate from at least one second ejecting hole of a second nozzle arranged along the substrate arrangement direction of the substrate arrangement region; and supplying the reactant to the at least one substrate.

公开(公告)号：US11784044B2

公开(公告)日：2023-10-10

申请号：US18179293

申请日：2023-03-06

Applicant: Kokusai Electric Corporation

Inventor： Takeo Hanashima ,  Kiyohisa Ishibashi

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/44 ,  C23C16/46

CPC classification number: H01L21/0228 ,  C23C16/345 ,  C23C16/4408 ,  C23C16/46 ,  H01L21/0217 ,  H01L21/02167 ,  H01L21/02211

Abstract: There is provided a technique that includes: forming a film on a substrate including a recess formed on a surface of the substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor gas to the substrate; and (b) supplying a reaction gas to the substrate, wherein in (a), the precursor gas is supplied to the substrate separately a plurality of times, and a processing condition under which the precursor gas is supplied for a first time is set to a processing condition under which self-decomposition of the precursor gas is capable of being more suppressed than a processing condition under which the precursor gas is supplied for at least one subsequent time after the first time.

公开(公告)号：US11387097B2

公开(公告)日：2022-07-12

申请号：US17024784

申请日：2020-09-18

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Takeo Hanashima ,  Hiroto Yamagishi

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/321 ,  H01L21/67

Abstract: There is provided a technique that includes: forming an initial oxide layer on a surface of a substrate by performing a set m times (where m is an integer equal to or greater than 1), the set including non-simultaneously performing: (a) oxidizing the surface of the substrate under a condition that an oxidation amount of the substrate increases from an upstream side to a downstream side of a gas flow by supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate; and (b) oxidizing the surface of the substrate under a condition that the oxidation amount of the substrate decreases from the upstream side to the downstream side of the gas flow by supplying the oxygen-containing gas and the hydrogen-containing gas to the substrate; and forming a film on the initial oxide layer by supplying a precursor gas to the substrate.

公开(公告)号：US11365482B2

公开(公告)日：2022-06-21

申请号：US16833014

申请日：2020-03-27

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Mikio Ohno ,  Atsushi Umekawa ,  Takeo Hanashima ,  Hiroaki Hiramatsu

IPC: C23C16/52 ,  H01L21/67 ,  C23C16/44 ,  C23C16/34 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02 ,  H01L21/673

Abstract: There is provided a substrate processing apparatus including a process chamber defined at least by a reaction tube and a furnace opening part provided at a lower portion of the reaction tube; a nozzle provided at the furnace opening part and extending from the furnace opening part to an inside of the reaction tube; a gas supply system provided at an upstream side of the nozzle; a blocking part provided at a boundary between the gas supply system and the nozzle; and a controller configured to control the gas supply system and the blocking part such that the blocking part co-operates with the gas supply system to supply gases into the process chamber through the nozzle.