SURFACE EMITTING LASER ELEMENT AND MANUFACTURING METHOD OF THE SAME

    公开(公告)号:US20210328406A1

    公开(公告)日:2021-10-21

    申请号:US17272385

    申请日:2019-08-29

    Abstract: A surface emitting laser element formed of a group III nitride semiconductor, comprising: a first clad layer of a first conductivity type; a first guide layer of the first conductivity type having a photonic crystal layer formed on the first clad layer including voids disposed having two-dimensional periodicity in a surface parallel to the layer and a first embedding layer formed on the photonic crystal layer; a second embedding layer formed on the first embedding layer by crystal growth; an active layer formed on the second embedding layer; a second guide layer formed on the active layer; and a second clad layer of a second conductivity type formed on the second guide layer, the second conductivity type being a conductivity type opposite to the first conductivity type. The first embedding layer has a surface including pits disposed at surface positions corresponding to the voids.

    TWO-DIMENSIONAL PHOTONIC-CRYSTAL LASER
    3.
    发明公开

    公开(公告)号:US20230361530A1

    公开(公告)日:2023-11-09

    申请号:US17908202

    申请日:2021-03-17

    Abstract: A two-dimensional photonic-crystal laser includes: a substrate made of an n-type semiconductor; a p-type cladding layer on an upper side of the substrate made of a p-type semiconductor; an active layer on an upper side of the cladding layer; a two-dimensional photonic-crystal layer on an upper side of the active layer including a plate-shaped base body made of an n-type semiconductor wherein modified refractive index areas whose refractive index differs from the base body are arranged; a first tunnel layer between the substrate and cladding layer made of an n-type semiconductor having a carrier density higher than the substrate's; a second tunnel layer between the first tunnel and cladding layers, made of a p-type semiconductor having a carrier density higher than the p-type semiconductor layer's; a first electrode on a lower side of or in the substrate; and a second electrode on an upper side of the two-dimensional photonic-crystal layer.

    TWO-DIMENSIONAL PHOTONIC CRYSTAL LASER
    6.
    发明公开

    公开(公告)号:US20240128717A1

    公开(公告)日:2024-04-18

    申请号:US18275963

    申请日:2022-02-24

    CPC classification number: H01S5/11 H01S5/04256 H01S5/18

    Abstract: A two-dimensional photonic crystal laser includes: electrodes; an active layer; and a two-dimensional photonic crystal layer in which modified refractive index regions are disposed to be shifted by different shift amounts from respective lattice points or/and are disposed at the respective lattice points with different areas, the shift amount or/and the area is/are modified with a composite modulation period and expressed by a modulation phase Ψ(r↑) expressed using a vector r↑ indicating a position of each lattice point of the two-dimensional lattice, a vector kn↑ indicating a combination of an inclination angle and an azimuthal angle of each of n laser beams mutually differing in the inclination angle and/or the azimuthal angle, and an amplitude An and a phase exp(iαn) determined for each n and the amplitude An and/or the phase exp(iαn) for each value of n differ(s) from each other in at least two different values of n.

    TWO-DIMENSIONAL PHOTONIC-CRYSTAL SURFACE-EMITTING LASER

    公开(公告)号:US20240120710A1

    公开(公告)日:2024-04-11

    申请号:US18275821

    申请日:2022-02-24

    CPC classification number: H01S5/11 H01S5/18

    Abstract: A two-dimensional photonic-crystal surface-emitting laser includes: a two-dimensional photonic-crystal layer; an active layer provided on one surface side of the two-dimensional photonic-crystal layer; and a reflection layer provided on the other surface side of the two-dimensional photonic-crystal layer or on a side opposite to the two-dimensional photonic-crystal layer so as to be spaced apart from the two-dimensional photonic-crystal layer, wherein a distance d between surfaces of the two-dimensional photonic-crystal layer and the reflection layer facing each other is set such that a radiation coefficient difference Δαv=(αv1−αv0), which is a value obtained by subtracting a radiation coefficient αv0 of a fundamental mode having the smallest loss from a radiation coefficient αv1 of a first higher order mode having the second smallest loss among the light amplified in the two-dimensional photonic-crystal layer, is 1 cm−1 or more.

    TWO-DIMENSIONAL PHOTONIC-CRYSTAL LASER
    8.
    发明公开

    公开(公告)号:US20230163566A1

    公开(公告)日:2023-05-25

    申请号:US17916116

    申请日:2021-03-30

    Abstract: A two-dimensional photonic-crystal laser formed by sandwiching, between a first electrode and a second electrode, a layered body including an active layer and a two-dimensional photonic-crystal layer in which modified refractive index areas having a refractive index different from a refractive index of a plate-shaped base body are periodically arranged two-dimensionally on the base body. The first electrode is divided into a plurality of partial electrodes, and the second electrode is a frame-shaped electrode including a frame-shaped portion made of a conductor, the second electrode having a window portion which is a space inside the frame-shaped portion being arranged to face a region enclosing a plurality of the partial electrodes. A lens provided on the side opposite to the layered body of the second electrode in a manner covering the entire window portion is included.

    THREE-DIMENSIONAL SENSING SYSTEM
    9.
    发明申请

    公开(公告)号:US20220128696A1

    公开(公告)日:2022-04-28

    申请号:US17569922

    申请日:2022-01-06

    Abstract: The 3D sensing system includes: a PC laser array in which PC laser elements are arranged on a plane; a control unit configured to control an operation mode of a laser light source; a driving unit configured to execute a drive control of the PC laser array in accordance with an operation mode controlled by the control unit; a light receiving unit configured to receive reflected light that is laser light emitted from the PC laser array and reflected from a measuring object; a signal processing unit configured to execute signal processing of the reflected light received by the light receiving unit in accordance with the operation mode; and a distance calculation unit configure to execute calculation processing of a distance to the measuring object with respect to a signal processed by the signal processing unit, in accordance with the operation mode, and to output distance data.

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