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    Thin film transistor with channel protection film of specific resistivity
    3.
    发明授权
    Thin film transistor with channel protection film of specific resistivity 有权
    具有电阻率的沟道保护膜的薄膜晶体管

    公开(公告)号：US08994020B2

    公开(公告)日：2015-03-31

    申请号：US13799565

    申请日：2013-03-13

    申请人： Kabushiki Kaisha Toshiba

    发明人： Shintaro Nakano ,  Kentaro Miura ,  Nobuyoshi Saito ,  Tatsunori Sakano ,  Tomomasa Ueda ,  Hajime Yamaguchi

    IPC分类号： H01L29/786

    CPC分类号： H01L29/7869

    摘要： According to one embodiment, a display device includes a thin film transistor. The thin film transistor includes a gate insulating film, a semiconductor layer, a gate electrode, first and second channel protection films, first and second conductive layers, and a passivation film. The semiconductor layer is provided on a major surface of the gate insulating film. The semiconductor layer includes first to seventh portions. The gate insulating film is disposed between the semiconductor layer and the gate electrode. The first channel protection film covers the third portion. The second channel protection film covers the fifth and fourth portions, and an upper surface of the first channel protection film. The first conductive layer covers the sixth portion. The second conductive layer covers the seventh portion. The passivation film covers the first and second portions, the first and second conductive layers, and the second channel protection film.

    摘要翻译： 根据一个实施例，显示装置包括薄膜晶体管。 薄膜晶体管包括栅极绝缘膜，半导体层，栅电极，第一和第二沟道保护膜，第一和第二导电层以及钝化膜。 半导体层设置在栅极绝缘膜的主表面上。 半导体层包括第一至第七部分。 栅极绝缘膜设置在半导体层和栅电极之间。 第一通道保护膜覆盖第三部分。 第二通道保护膜覆盖第五和第四部分以及第一通道保护膜的上表面。 第一导电层覆盖第六部分。 第二导电层覆盖第七部分。 钝化膜覆盖第一和第二部分，第一和第二导电层以及第二通道保护膜。

    Thin film transistor, manufacturing method of same, and display device
    4.
    发明授权
    Thin film transistor, manufacturing method of same, and display device 有权
    薄膜晶体管及其制造方法及显示装置

    公开(公告)号：US09412765B2

    公开(公告)日：2016-08-09

    申请号：US14171331

    申请日：2014-02-03

    申请人： Kabushiki Kaisha Toshiba

    发明人： Tomomasa Ueda ,  Shintaro Nakano ,  Nobuyoshi Saito ,  Kentaro Miura ,  Yujiro Hara ,  Hajime Yamaguchi

    IPC分类号： H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L33/08 ,  H01L21/336

    CPC分类号： H01L27/1225 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

    摘要： According to one embodiment, a thin film transistor includes: a substrate; a semiconductor layer; first and second insulating films; and gate, source and drain electrodes. The semiconductor layer is provided on the substrate. The semiconductor layer is made of an oxide having indium. The semiconductor layer has first and second regions and other region. The first insulating film covers a top face of the other region. The second insulating film covers at least a pair of side surfaces of the semiconductor layer. The second insulating film is formed under a condition different from that for the first insulating film. The gate electrode is provided on the first and second insulating films or below the semiconductor layer. The source and drain electrodes are provided on the first and second regions, respectively. The drain and source electrodes sandwich the pair of the side surfaces of the semiconductor layer.

    摘要翻译： 根据一个实施例，薄膜晶体管包括：衬底; 半导体层; 第一和第二绝缘膜; 和栅极，源极和漏极。 半导体层设置在基板上。 半导体层由具有铟的氧化物制成。 半导体层具有第一和第二区域和其它区域。 第一绝缘膜覆盖另一区域的顶面。 第二绝缘膜覆盖半导体层的至少一对侧表面。 在与第一绝缘膜不同的条件下形成第二绝缘膜。 栅电极设置在第一和第二绝缘膜上或半导体层下方。 源极和漏极分别设置在第一和第二区域上。 漏极和源电极夹着半导体层的一对侧表面。

    Semiconductor element, display device, method for manufacturing semiconductor element, and method for manufacturing display device
    5.
    发明授权
    Semiconductor element, display device, method for manufacturing semiconductor element, and method for manufacturing display device 有权
    半导体元件，显示装置，半导体元件的制造方法以及显示装置的制造方法

    公开(公告)号：US09293600B2

    公开(公告)日：2016-03-22

    申请号：US14461677

    申请日：2014-08-18

    申请人： Kabushiki Kaisha Toshiba

    发明人： Shintaro Nakano ,  Tomomasa Ueda ,  Kentaro Miura ,  Nobuyoshi Saito ,  Tatsunori Sakano ,  Yuya Maeda ,  Masaki Atsuta ,  Hajime Yamaguchi

    IPC分类号： H01L29/08 ,  H01L29/786 ,  H01L29/66

    CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78618 ,  H01L2227/323

    摘要： A semiconductor element includes a semiconductor layer, a first and a second conductive unit, a gate electrode, and a gate insulating film. The semiconductor layer includes a first portion, a second portion, and a third portion provided between the first portion and the second portion. The first conductive unit is electrically connected to the first portion. The second conductive unit is electrically connected to the second portion. The gate electrode is separated from the first conductive unit, the second conductive unit, and the third portion. The gate electrode opposes the third portion. The gate insulating film is provided between the third portion and the gate electrode. A concentration of nitrogen of the first portion is higher than a concentration of nitrogen of the third portion. A concentration of nitrogen of the second portion is higher than the concentration of nitrogen of the third portion.

    摘要翻译： 半导体元件包括半导体层，第一和第二导电单元，栅极电极和栅极绝缘膜。 半导体层包括第一部分，第二部分和设置在第一部分和第二部分之间的第三部分。 第一导电单元电连接到第一部分。 第二导电单元电连接到第二部分。 栅电极与第一导电单元，第二导电单元和第三部分分离。 栅电极与第三部分相对。 栅极绝缘膜设置在第三部分和栅电极之间。 第一部分的氮浓度高于第三部分的氮浓度。 第二部分的氮浓度高于第三部分的氮浓度。

    DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME
    6.
    发明申请
    DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
    显示装置及其制造方法

    公开(公告)号：US20140084310A1

    公开(公告)日：2014-03-27

    申请号：US13803941

    申请日：2013-03-14

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Kentaro MIURA ,  Tomomasa Ueda ,  Nobuyoshi Saito ,  Shintaro Nakano ,  Tatsunori Sakano ,  Hajime Yamaguchi

    IPC分类号： H01L33/08

    CPC分类号： H01L33/08 ,  H01L27/1225 ,  H01L27/3244 ,  H01L51/0024 ,  H01L51/5253

    摘要： According to an embodiment, a method for manufacturing a display device, includes steps of disposing a cathode of a first substrate unit to face an anode of a second substrate unit with an intermediate layer interposed, and bonding the cathode to the anode with the intermediate layer interposed. The first substrate unit includes a first substrate, a thin film transistor provided on the first substrate, and the cathode connected to the thin film transistor. The thin film transistor is an n-channel thin film transistor. The second substrate unit includes a second substrate and the anode provided on the second substrate.

    摘要翻译： 根据一个实施例，一种制造显示装置的方法包括以下步骤：将第一基板单元的阴极设置成面对具有中间层的第二基板单元的阳极，并将阴极与中间层接合 插入。 第一基板单元包括第一基板，设置在第一基板上的薄膜晶体管和连接到薄膜晶体管的阴极。 薄膜晶体管是n沟道薄膜晶体管。 第二基板单元包括第二基板和设置在第二基板上的阳极。

    SEMICONDUCTOR DEVICE
    10.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20170077277A1

    公开(公告)日：2017-03-16

    申请号：US15235391

    申请日：2016-08-12

    申请人： Kabushiki Kaisha Toshiba

    发明人： Hisashi Saito ,  Masahiko Kuraguchi ,  Tatsuo Shimizu ,  Shintaro Nakano

    IPC分类号： H01L29/778 ,  H01L29/423 ,  H01L21/02 ,  H01L29/66 ,  H01L21/28 ,  H01L29/20 ,  H01L29/51

    CPC分类号： H01L29/7786 ,  H01L21/02145 ,  H01L21/02266 ,  H01L21/28264 ,  H01L23/291 ,  H01L23/3178 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/4236 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66462

    摘要： A semiconductor device according to an embodiment includes a first nitride semiconductor layer; a source electrode provided on the first nitride semiconductor layer; a drain electrode provided on the first nitride semiconductor layer; a gate electrode provided between the source electrode and the drain electrode; a first film provided between the source electrode and the gate electrode and between the gate electrode and the drain electrode; and a second film provided on the first film. The first film is provided on the first nitride semiconductor layer. The first film has a lower hydrogen diffusion coefficient than a hydrogen diffusion coefficient of a silicon oxide film.

    摘要翻译： 根据实施例的半导体器件包括第一氮化物半导体层; 设置在所述第一氮化物半导体层上的源电极; 设置在所述第一氮化物半导体层上的漏电极; 设置在源电极和漏电极之间的栅电极; 设置在源电极和栅电极之间以及栅电极和漏电极之间的第一膜; 以及设置在第一胶片上的第二胶片。 第一膜设置在第一氮化物半导体层上。 第一膜的氢扩散系数低于氧化硅膜的氢扩散系数。