Endoscope and system and method of operation thereof

    公开(公告)号:US10278568B2

    公开(公告)日:2019-05-07

    申请号:US15413307

    申请日:2017-01-23

    摘要: An endoscope includes a rigid section having an opening situated between two ends. The endoscope also includes a handle for manipulation and at the first end. An image capturing device is near the second end and is configured to provide a first view when pointed in a first direction. The image capturing device is moved with respect to a longitudinal axis of the rigid section in response to a movement of an extension portion of a shaft located in the opening and operatively coupling the handle and a first base part resulting from the manipulation of the handle. A fixing member is rigidly coupled to the rigid section and pivotably coupled to the first base part at a second pivot portion of the first base part, and a second base part is pivotably connected to the fixing member at a pivot portion of the second base part.

    Carbon nanotube high-current-density field emitters
    3.
    发明授权
    Carbon nanotube high-current-density field emitters 有权
    碳纳米管大电流密度场发射体

    公开(公告)号:US07834530B2

    公开(公告)日:2010-11-16

    申请号:US11137725

    申请日:2005-05-24

    IPC分类号: H01J9/02

    摘要: High-current density field emission sources using arrays of nanofeatures bundles and methods of manufacturing such field emission sources are provided. Variable field emission performance is provided with the variance in the bundle diameter and the inter-bundle spacing, and optimal geometries for the lithographically patterned arrays were determined. Arrays of 1-μm and 2-μm diameter multi-walled carbon nanotube bundles spaced 5 μm apart (edge-to-edge spacing) were identified as the most optimum combination, routinely producing 1.5 to 1.8 A/cm2 at low electric fields of approximately 4 V/μm, rising to >6 A/cm2 at 20 V/μm over a ˜100-μm-diameter area.

    摘要翻译: 提供了使用纳米尺寸束阵列的大电流密度场发射源和制造这种场致发射源的方法。 可变场发射性能具有束直径和束间距的变化,并且确定了用于光刻图案阵列的最佳几何形状。 将距离为5微米(边缘到边缘间距)的1μm和2μm直径的多壁碳纳米管束的阵列确定为最佳组合,通常在大约的低电场下产生1.5至1.8A / cm 2 4 V /μm,在直径约100μm的区域,以20 V /μm上升至> 6A / cm2。