公开(公告)号：US5567476A

公开(公告)日：1996-10-22

申请号：US427772

申请日：1995-04-25

申请人： Kam S. Law ,  Robert Robertson ,  Michael Kollrack ,  Angela T. Lee ,  Takako Takehara ,  Guofu J. Feng ,  Dan Maydan

发明人： Kam S. Law ,  Robert Robertson ,  Michael Kollrack ,  Angela T. Lee ,  Takako Takehara ,  Guofu J. Feng ,  Dan Maydan

IPC分类号： H01L21/205 ,  C23C16/24 ,  C23C16/34 ,  H01L21/31 ,  H01L21/318 ,  H01L21/336 ,  H01L29/786 ,  C23C16/00

CPC分类号： H01L29/66765 ,  C23C16/24 ,  C23C16/345

摘要： A multi-step CVD method for thin film transistor is disclosed. The method can be carried out by depositing a high quality g-SiN.sub.x at a low deposition rate on top of an average quality gate nitride deposited at a high deposition rate and then depositing an amorphous silicon layer. It also applies in a process where high quality amorphous silicon is first deposited at a low deposition rate on a gate nitride layer to form an interface, and then average quality amorphous silicon is deposited at a high deposition rate to complete the silicon layer. The unique process can be applied whenever an interface exists with an active semiconductor layer of amorphous silicon. The process is applicable to either the back channel etched TFT device or the etch stopped TFT device.

摘要翻译： 公开了薄膜晶体管的多步CVD方法。 该方法可以通过在以高沉积速率沉积的平均质量的氮化镓的顶部上以低沉积速率沉积高质量的g-SiNx，然后沉积非晶硅层来进行。 它也适用于首先在栅极氮化物层上以低沉积速率沉积高品质非晶硅以形成界面的过程，然后以高沉积速率淀积平均质量的非晶硅以完成硅层。 每当与非晶硅的有源半导体层存在界面时，可以应用独特的工艺。 该工艺适用于后沟道蚀刻TFT器件或蚀刻停止的TFT器件。

公开(公告)号：US5441768A

公开(公告)日：1995-08-15

申请号：US193310

申请日：1994-02-08

申请人： Kam S. Law ,  Robert Robertson ,  Michael Kollrack ,  Angela T. Lee ,  Takako Takehara ,  Guofu J. Feng ,  Dan Maydan

发明人： Kam S. Law ,  Robert Robertson ,  Michael Kollrack ,  Angela T. Lee ,  Takako Takehara ,  Guofu J. Feng ,  Dan Maydan

IPC分类号： H01L21/205 ,  C23C16/24 ,  C23C16/34 ,  H01L21/31 ,  H01L21/318 ,  H01L21/336 ,  H01L29/786 ,  C23C16/22

CPC分类号： H01L29/66765 ,  C23C16/24 ,  C23C16/345

摘要： An improved method of depositing films of a gate silicon nitride and an amorphous silicon on a thin film transistor substrate at high deposition rates while maintaining superior film quality is provided. The material near the interface between the amorphous silicon and the nitride are deposited at a low deposition rate which produces superior quality films. The region away from the interface are deposited at a high deposition rate which produces lesser, but still good quality films. By using this method, superior quality thin film transistors can be produced at very high efficiency. The method can be carried out by depositing a high quality g-SiN.sub.x at a low deposition rate on top of an average quality gate nitride deposited at a high deposition rate and then depositing an amorphous silicon layer. It also applies in a process where high quality amorphous silicon is first deposited at a low deposition rate on a gate nitride layer to form an interface, and then average quality amorphous silicon is deposited at a high deposition rate to complete the silicon layer. The unique process can be applied whenever an interface exists with an active semiconductor layer of amorphous silicon. The process is applicable to either the back channel etched TFT device or the etch stopped TFT device.

摘要翻译： 提供了一种在保持优异的膜质量的同时以高沉积速率在薄膜晶体管基板上沉积栅极氮化硅和非晶硅的膜的改进方法。 在非晶硅和氮化物之间的界面附近的材料以低沉积速率沉积，其产生优质的膜。 离开界面的区域以高沉积速率沉积，其产生较小但仍然是优质的膜。 通过使用该方法，能够以非常高的效率制造出优质的薄膜晶体管。 该方法可以通过在以高沉积速率沉积的平均质量的氮化镓的顶部上以低沉积速率沉积高质量的g-SiNx，然后沉积非晶硅层来进行。 它也适用于首先在栅极氮化物层上以低沉积速率沉积高品质非晶硅以形成界面的过程，然后以高沉积速率淀积平均质量的非晶硅以完成硅层。 每当与非晶硅的有源半导体层存在界面时，可以应用独特的工艺。 该工艺适用于后沟道蚀刻TFT器件或蚀刻停止的TFT器件。

公开(公告)号：US06338874B1

公开(公告)日：2002-01-15

申请号：US08572385

申请日：1995-12-14

申请人： Kam S. Law ,  Robert Robertson ,  Pamela Lou ,  Marc Michael Kollrack ,  Angela Lee ,  Dan Maydan

发明人： Kam S. Law ,  Robert Robertson ,  Pamela Lou ,  Marc Michael Kollrack ,  Angela Lee ,  Dan Maydan

IPC分类号： C23C1600

CPC分类号： H01L21/67167 ,  C23C16/24 ,  C23C16/345 ,  C23C16/54 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67236 ,  H01L29/66765

摘要： Multilayer deposition of thin films onto glass substrates to form thin film transistors can be carried out in the same chamber under similar reaction conditions at high deposition rates. We have found that sequential thin layers of silicon nitride and amorphous silicon can be deposited in the same chamber by chemical vapor deposition using pressure of at least 0.5 Torr and substrate temperatures of about 250-370° C. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers which are part of a single multichamber vacuum system.

摘要翻译： 可以在相同的室中在相同的反应条件下以高沉积速率将薄膜多层沉积到玻璃基板上以形成薄膜晶体管。 我们已经发现，氮化硅和非晶硅的顺序薄层可以通过使用至少0.5托的压力和约250-370℃的衬底温度的化学气相沉积在相同的室中沉积。随后沉积的不同薄膜也可以是 沉积在单独的化学气相沉积室中，其是单个多室真空系统的一部分。

公开(公告)号：US06444277B1

公开(公告)日：2002-09-03

申请号：US08303566

申请日：1994-09-09

申请人： Kam S. Law ,  Robert Robertson ,  Pamela Lou ,  Marc Michael Kollrack ,  Angela Lee ,  Dan Maydan

发明人： Kam S. Law ,  Robert Robertson ,  Pamela Lou ,  Marc Michael Kollrack ,  Angela Lee ,  Dan Maydan

IPC分类号： B05D306

CPC分类号： C23C16/0245 ,  C23C16/24 ,  C23C16/4583 ,  C23C16/5096 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262

摘要： Amorphous silicon thin films can be deposited onto large area glass substrates at high deposition rates by chemical vapor deposition using pressure of at least 0.8 Torr and temperatures of about 270-350° C. and fairly high gas flow rates of silane in a hydrogen carrier gas. The spacing between the inlet gas manifold and the substrate in the CVD chamber is maintained so as to maximize the deposition rate. Improved transistor characteristics are observed when the substrate is either exposed to a hydrogen plasma for a few seconds prior to high rate deposition of the amorphous silicon, or when a first layer of amorphous silicon is deposited using a slow deposition rate process prior to deposition of the high deposition rate amorphous silicon.

摘要翻译： 非晶硅薄膜可以通过使用至少0.8托的压力和约270-350℃的温度的化学气相沉积以高沉积速率沉积到大面积玻璃基板上，并且在氢载气中具有相当高的硅烷气体流速 。 保持入口气体歧管和CVD室中的衬底之间的间隔，以使沉积速率最大化。 当在非晶硅的高速沉积之前衬底被暴露于氢等离子体几秒钟时，或者当沉积第一层非晶硅之前使用缓慢沉积速率工艺沉积第一层非晶硅时，可以观察到改善的晶体管特性 高沉积速率非晶硅。

公开(公告)号：US06610354B2

公开(公告)日：2003-08-26

申请号：US09886174

申请日：2001-06-18

申请人： Kam S. Law ,  Quanyuan Shang ,  Takako Takehara ,  Taekyung Won ,  William R. Harshbarger ,  Dan Maydan

发明人： Kam S. Law ,  Quanyuan Shang ,  Takako Takehara ,  Taekyung Won ,  William R. Harshbarger ,  Dan Maydan

IPC分类号： C23C1640

CPC分类号： H01J11/38 ,  H01J11/12

摘要： A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.

公开(公告)号：US07122962B2

公开(公告)日：2006-10-17

申请号：US10460837

申请日：2003-06-11

申请人： Kam S. Law ,  Quanyuan Shang ,  Takako Takehara ,  Taekyung Won ,  William R. Harshbarger ,  Dan Maydan

发明人： Kam S. Law ,  Quanyuan Shang ,  Takako Takehara ,  Taekyung Won ,  William R. Harshbarger ,  Dan Maydan

IPC分类号： H01J17/49

CPC分类号： H01J11/38 ,  H01J11/12

摘要： A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.

摘要翻译： 包括低k电介质层的等离子体显示面板。 在一个实施例中，电介质层包括氟掺杂氧化硅层，例如SiOF层。 在另一个实施例中，电介质层包括Black Diamond TM层。 在某些实施例中，覆盖层例如SiN或SiON沉积在电介质层上。

公开(公告)号：US5399387A

公开(公告)日：1995-03-21

申请号：US227479

申请日：1994-04-13

申请人： Kam S. Law ,  Robert Robertson ,  Pamela Lou ,  Marc M. Kollrack ,  Angela Lee ,  Dan Maydan

发明人： Kam S. Law ,  Robert Robertson ,  Pamela Lou ,  Marc M. Kollrack ,  Angela Lee ,  Dan Maydan

IPC分类号： C03C17/22 ,  C23C16/34 ,  C23C16/42 ,  C23C16/44 ,  C23C16/455 ,  C23C16/54 ,  H01L21/205 ,  H01L21/31 ,  H01L21/318 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786 ,  B05D3/06

CPC分类号： C23C16/45565 ,  C03C17/225 ,  C23C16/345 ,  C23C16/4557 ,  C23C16/54 ,  C03C2217/281 ,  C03C2218/153

摘要： High quality silicon nitride thin films can be deposited by plasma CVD onto large area glass substrates at high deposition rates by adjusting the spacing between the gas inlet manifold and substrate, maintaining the temperature at about 300.degree.-350.degree. C., and a pressure of at least 0.8 Torr. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers which are part of a single vacuum system.

摘要翻译： 可以通过等离子体CVD将高质量的氮化硅薄膜以高沉积速率沉积到大面积玻璃基板上，通过调节进气歧管和基板之间的间距，保持温度在约300-350℃， 至少0.8托。 随后沉积的不同薄膜也可以沉积在作为单个真空系统的一部分的分离的化学气相沉积室中。

公开(公告)号：US06451390B1

公开(公告)日：2002-09-17

申请号：US09544728

申请日：2000-04-06

申请人： Haruhiro H. Goto ,  Takako Takehara ,  Carl A. Sorensen ,  William R. Harshbarger ,  Kam S. Law

发明人： Haruhiro H. Goto ,  Takako Takehara ,  Carl A. Sorensen ,  William R. Harshbarger ,  Kam S. Law

IPC分类号： H05H124

CPC分类号： C03C17/245 ,  C03C2217/213 ,  C03C2218/153

摘要： A method for the deposition of a silicon dioxide film onto a substrate using plasma enhanced chemical vapor deposition and TEOS is disclosed. The method includes controlling the deposition rate of silicon dioxide on a substrate by pulsing the radio frequency power supply used to generate a TEOS oxide plasma. The obtained silicon dioxide film is good in electrical and mechanical film properties for the application of forming thin film transistors.

公开(公告)号：US06172322B2

公开(公告)日：2001-01-09

申请号：US08965939

申请日：1997-11-07

申请人： Quanyuan Shang ,  Robert McCormick Robertson ,  Kam S. Law ,  Takako Takehara ,  Taekyung Won ,  Sheng Sun

发明人： Quanyuan Shang ,  Robert McCormick Robertson ,  Kam S. Law ,  Takako Takehara ,  Taekyung Won ,  Sheng Sun

IPC分类号： H05B680

CPC分类号： C23C16/56

摘要： A system and method for annealing a film on a substrate in a processing chamber, including a microwave generator disposed to provide microwaves to an area within the interior of the chamber. The microwaves have a frequency such that the film is substantially absorptive at the frequency but the substrate is not substantially absorptive at the frequency. A waveguide distributes the microwaves over the surface of the film to provide a substantially uniform dosage of microwaves over the surface of the film. The method includes depositing a film on a substrate in the processing chamber. During at least a portion of the time of the depositing step, microwaves are generated having a frequency such that the film has an absorption peak at the frequency but the substrate lacks a substantial absorption peak at the frequency. The microwaves are directed towards the film.

摘要翻译： 一种用于对处理室中的基板上的膜进行退火的系统和方法，该处理室包括微波发生器，微波发生器被设置成向腔室内部的区域提供微波。 微波的频率使得膜在频率上基本上是吸收性的，但是基底在频率上基本上不吸收。 波导将微波分布在膜的表面上，以在膜的表面上提供基本上均匀的微波用量的微波。 该方法包括在处理室中的衬底上沉积膜。 在沉积步骤的至少一部分时间内，产生具有频率使得该膜在频率处具有吸收峰但基底在该频率处缺少实质吸收峰的频率的微波。 微波指向电影。

公开(公告)号：US6055927A

公开(公告)日：2000-05-02

申请号：US782169

申请日：1997-01-14

申请人： Quanyuan Shang ,  Robert McCormick Robertson ,  Kam S. Law ,  Dan Maydan

发明人： Quanyuan Shang ,  Robert McCormick Robertson ,  Kam S. Law ,  Dan Maydan

IPC分类号： B08B7/00 ,  C23C16/42 ,  C23C16/44 ,  C23C16/52 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31 ,  C23C16/00

CPC分类号： C23C16/4405

摘要： An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber. The apparatus includes a deposition chamber having walls; means for heating the walls, the means thermally coupled to the walls; a liner covering a substantial portion of the walls; a remote chamber disposed outside of the chamber; an activation source adapted to deliver energy into the remote chamber; a first conduit for flowing a precursor gas from a remote gas supply into the remote chamber where it is activated by the activation source to form a reactive species; and a second conduit for flowing the reactive species from the remote chamber into the deposition chamber.