摘要:
RIE processing chambers includes arrangements of gas outlets which force gas-flow-shadow elimination. Means are provided to control and adjust the direction of gases to the outlet to modify and control the direction of plasma flow at the wafer surface during processing. Means are provided to either move the exhaust paths for exhaust gases or to open and close exhaust paths sequentially, in a controlled manner, to modify flow directions of ions in the etching plasma. A combination of rotation/oscillation of a magnetic field imposed on the RIE chamber can be employed by rotation of permanent magnetic dipoles about the periphery of the RIE chamber or by controlling current through a coil wrapped around the periphery of the RIE process chamber to enhance the removal of the residues attributable to gas-flow-shadows formed by linear ion paths in the plasma.
摘要:
Form a solder connector on a semiconductor device starting with a first step of forming at least one dielectric layer over a doped semiconductor substrate. Then form a hole through the dielectric layer down to the semiconductor substrate. Form a metal conductor in the hole. Form intermediate layers over the metal conductor and the dielectric layer. Then form a tapered opening down to the surface of the metal conductor. Form BLM layers including a titanium-tungsten (TiW) layer over the metal conductor and the dielectric layer with the remainder of the BLM layers being formed over the TiW layer. Form a mask over the top surface of the BLM layers with a patterning through hole located above the metal conductor exposing a portion of the surface of the BLM layers. Plate a C4 solder bump on the BLM layers in the patterning hole. Remove the mask. Wet etch away the BLM layers aside from the solder bump leaving a residual TiW layer over the dielectric layer. Perform a dry etching process to remove the residual TiW layer aside from the solder bump. Then, end the dry etching when the end point has been reached. Finally, heat the solder bump in a reflow process to form a C4 solder ball.
摘要:
A method is provided for treating inflammatory and/or psychotic conditions with triazole derivatives, such as 3-alkyl-5-phenyl-1,2,4-triazoles. Pharmaceutical compositions containing such triazoles are also provided.
摘要:
Compounds having the formula ##STR1## wherein R.sub.1 is hydrogen, halogen, alkyl, alkoxy or nitro; R.sub.2 is hydrogen, halogen or alkoxy; and R.sub.3 is pyridinyl, pyrimidinyl, pyrazinyl, or 1,3,5-triazinyl, have antiinfammatory activity.
摘要:
[(1,1-Dioxo-1,2-benzisothiazol-3-yl)amino]alkanoic acids, esters and salts thereof which have the general formula ##STR1## are useful as anti-inflammatory agents.
摘要:
Compounds of the following formula ##STR1## wherein R.sup.1 and R.sup.2 are independently selected from hydrogen, halogen, lower alkyl, lower alkoxy, lower alkylthio, nitro, cyano, and trifluoromethyl, and R is selected from a triacetyl substituted pentose, pentose, a tetraacetyl substituted hexose, hexose, a hydroxy substituted cycloalkyl of 5 to 7 carbons, ##STR2## wherein n is 1 or 2 ad R.sup.3 is hydrogen, an alkali metal or alkaline earth metal ion; are disclosed. These compounds possess useful anti-inflammatory activity.
摘要:
3-(Arylcycloiminoalkyl)benzisothiazole 1,1-dioxides are provided having the structure ##STR1## wherein R is hydrogen, halogen, lower alkyl, lower alkoxy or nitro; R.sup.1 is hydrogen, lower alkoxy or halogen with the proviso that R.sup.1 can be lower alkoxy or halogen only when R is lower alkoxy or halogen, respectively; A is O or NH; X is hydrogen, halogen lower alkyl, lower alkoxy, or trifluoromethyl; Y is C or N, where Y is C, is a double bond, and when Y is N, represents a single bond, B is an alkylene group containing 2 to 5 carbons in the normal chain; Q is a single bond or an alkylene group containing 1 to 3 carbons in the normal chain; and physiologically acceptable acid-addition salts thereof. These compounds are useful as antiinflammatory agents.
摘要:
Compounds of the following formula and their acid addition salts ##STR1## Z is ##STR2## A is straight or branched chain alkylene of 2 to 6 carbons; B is straight chain alkylene of 2 to 4 carbons; X is straight or branched chain alkyl of 1 to 8 carbons, phenyl, benzyl, phenethyl, substituted phenyl, substituted benzyl, or substituted phenethyl, R.sub.1 and R.sub.2 are located at the 7 or 8 and 5 or 6 position respectively and are independently selected from the group consisting of hydrogen, straight or branched chain alkyl of 1 to 4 carbons, straight or branched chain alkoxy of 1 to 4 carbons, Cl, Br, F, amino, nitro, CF.sub.3, and cyano; are disclosed. These compounds possess antiprotozoal activity.
摘要:
Compounds having the formula ##STR1## wherein A is a straight or branched chain alkylene group; R is hydrogen, halogen, alkyl, alkoxy, alkylthio, trifluoromethyl, nitro, amino, or cyano; and m is 2, 3 or 4; are useful in the treatment of allergic conditions in mammals.