公开(公告)号：US6019656A

公开(公告)日：2000-02-01

申请号：US145327

申请日：1998-09-01

申请人： Kang Ho Park ,  Wan Soo Yun ,  Jeong Sook Ha

发明人： Kang Ho Park ,  Wan Soo Yun ,  Jeong Sook Ha

IPC分类号： H01J9/02

CPC分类号： B82Y10/00 ,  H01J9/025 ,  Y10S977/842

摘要： This invention relates to a fabrication method of field emission device by using a carbon nano-tubes and, more particularly, to a fabrication method of field emission device by using the carbon nano-tubes, gathering much attention as a new material, as a field emission tips which have thin and stiff edges so that a threshold voltage required for emitting electron of the field emission device is to be lowered drastically. This invention provides a fabrication method of the field emission device using a thermally and chemically stable carbon nano-tubes, which have very stiff and nano-meter-thick edges, as a field emission tips so that the field emission device using the carbon nano-tubes as the tips, which have an excellent electron beam coherency, can emit electrons at a very low voltage and very stable during a long period.

摘要翻译： 本发明涉及一种使用碳纳米管的场发射装置的制造方法，更具体地说，涉及使用碳纳米管的场致发射装置的制造方法，作为现场作为新材料而备受关注 具有薄且硬边缘的发射尖端，使得发射场致发射装置的电子所需的阈值电压显着降低。 本发明提供了使用具有非常硬且纳米厚的边缘的热和化学稳定的碳纳米管作为场发射尖端的场发射器件的制造方法，使得使用碳纳米管的场致发射器件， 作为具有优异的电子束相干性的尖端的管可以在非常低的电压下发射电子并且在长时间段内非常稳定。

公开(公告)号：US07918935B2

公开(公告)日：2011-04-05

申请号：US11765177

申请日：2007-06-19

申请人： Hongkun Park ,  Charles M. Lieber ,  Jeffrey J. Urban ,  Qian Gu ,  Wan Soo Yun

发明人： Hongkun Park ,  Charles M. Lieber ,  Jeffrey J. Urban ,  Qian Gu ,  Wan Soo Yun

IPC分类号： C30B29/16

CPC分类号： H01L41/1136 ,  B82Y30/00 ,  C01G23/003 ,  C01G23/006 ,  C01G25/00 ,  C01G25/006 ,  C01G45/1264 ,  C01P2002/52 ,  C01P2002/54 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/12 ,  C01P2004/16 ,  C01P2004/50 ,  C01P2004/64 ,  C01P2006/40 ,  C04B35/62231 ,  C04B35/6225 ,  C04B35/62259 ,  C04B35/6264 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3262 ,  C04B2235/3296 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/526 ,  C04B2235/5264 ,  H01L41/082 ,  H01L41/094 ,  H01L41/18 ,  H03H9/176 ,  H03H2009/02165 ,  H03H2009/241

摘要： Nanowires are disclosed which comprise transition metal oxides. The transition metal oxides may include oxides of group II, group III, group IV and lanthanide metals. Also disclosed are methods for making nanowires which comprise injecting decomposition agents into a solution comprising solvents and metallic alkoxide or metallic salt precursors.

摘要翻译： 公开了包含过渡金属氧化物的纳米线。 过渡金属氧化物可以包括II族，III族，IV族和镧系金属的氧化物。 还公开了制备纳米线的方法，其包括将分解剂注入包含溶剂和金属醇盐或金属盐前体的溶液中。

公开(公告)号：US20090221086A1

公开(公告)日：2009-09-03

申请号：US12289386

申请日：2008-10-27

申请人： Dong Han Ha ,  Yong Ju Yun ,  Sanghun Kim ,  Hyung Ju Park ,  Wan Soo Yun ,  Yong Jai Cho

发明人： Dong Han Ha ,  Yong Ju Yun ,  Sanghun Kim ,  Hyung Ju Park ,  Wan Soo Yun ,  Yong Jai Cho

IPC分类号： G01N21/00

CPC分类号： G01N21/31 ,  B82Y20/00

摘要： The present invention relates to an apparatus and a method for detecting the presence of a particular organic, inorganic, metallic, natural or synthetic biomaterial and the concentration thereof. More particularly, the present invention relates to an apparatus and a method for detecting the identity, presence or absence, and concentration of a material to be detected, by which the metal ions of the detection solution are reduced to metals by a material to be detected and are deposited as metallic nanoparticles, resulting in the change of the shape, size or pattern of the metallic nanoparticles, and the change in light transmittance caused thereby is measured to detect the presence or absence of the material and the concentration thereof.

摘要翻译： 本发明涉及用于检测特定有机，无机，金属，天然或合成生物材料及其浓度的存在的装置和方法。 更具体地说，本发明涉及一种用于检测待检测材料的特性，存在或不存在以及浓度的装置和方法，通过该材料检测溶液的金属离子被待检测材料还原成金属 并且作为金属纳米粒子沉积，导致金属纳米粒子的形状，尺寸或图案的变化，并且测量由此引起的透光率的变化以检测材料的存在或不存在及其浓度。

公开(公告)号：US08603849B2

公开(公告)日：2013-12-10

申请号：US13061297

申请日：2009-08-28

申请人： Kyung Joong Kim ,  Woo Lee ,  Yong Sung Kim ,  Young Heon Kim ,  Seung hui Hong ,  Wan Soo Yun ,  Sang Woo Kang

发明人： Kyung Joong Kim ,  Woo Lee ,  Yong Sung Kim ,  Young Heon Kim ,  Seung hui Hong ,  Wan Soo Yun ,  Sang Woo Kang

IPC分类号： H01L31/0264

CPC分类号： H01L31/035218 ,  H01L31/18

摘要： The present invention provides a semiconductor based photovoltaic device and a manufacturing method thereof. The semiconductor based photovoltaic device is able to absorb light with a wide band wavelength, and has high photoelectric conversion efficiency since it has high electron-hole pair separation efficiency. More specifically, the method for manufacturing the photovoltaic device comprises the steps of: a) forming a thin semiconductor quantum dot film on a p or n-type semiconductor substrate, wherein the thin semiconductor quantum dot film includes semiconductor quantum dots inside a medium at which the same type of impurities as the semiconductor substrate are doped; b) forming a pore array through partial etching, wherein the pore array penetrates the thin semiconductor quantum dot film; c) depositing a semiconductor in which complementary impurities to the semiconductor substrate are doped on the thin semiconductor quantum dot film at which the pore array is formed; and d) forming sequentially a transparent conductive film and an upper electrode on the semiconductor in which the complementary impurities are doped and forming a lower electrode at a lower portion of the semiconductor substrate.

摘要翻译： 本发明提供一种基于半导体的光电器件及其制造方法。 基于半导体的光电器件能够吸收宽带波长的光，并且由于具有高的电子 - 空穴对分离效率，因此光电转换效率高。 更具体地说，制造光伏器件的方法包括以下步骤：a）在p型或n型半导体衬底上形成薄的半导体量子点膜，其中薄的半导体量子点膜包括介质内的半导体量子点， 与半导体衬底掺杂相同类型的杂质; b）通过部分蚀刻形成孔阵列，其中孔阵列穿透薄的半导体量子点膜; c）在其上形成有孔阵列的薄半导体量子点膜上沉积半导体衬底掺杂杂质的半导体; 以及d）在所述半导体上顺序形成透明导电膜和上电极，其中所述互补杂质被掺杂并在所述半导体衬底的下部形成下电极。

公开(公告)号：US20100098966A1

公开(公告)日：2010-04-22

申请号：US11991071

申请日：2006-08-03

申请人： Chil Seong Ah ,  Yong Ju Yun ,  Jun Sung Lee ,  Hyung Ju Park ,  Dong Han Ha ,  Wan Soo Yun

发明人： Chil Seong Ah ,  Yong Ju Yun ,  Jun Sung Lee ,  Hyung Ju Park ,  Dong Han Ha ,  Wan Soo Yun

IPC分类号： B32B3/00 ,  B05D5/12 ,  G03F7/20

CPC分类号： G01R33/1269 ,  Y10T428/12389

摘要： The present invention relates to a process of preparing a nanogap electrode and a nanogap device using the same, and a preparing process according to the present invention is characterized in that reduced metal is grown by reduction reaction from a metal ion in solution on the surface of a metal pattern with a predetermined shape. A method of preparing a nanogap electrode according to the present invention has an advantage that nanogap electrodes having a gap distance of 1-100 nm, which are difficult to prepare by a conventional method, can be easily prepared in a reproducible and uniform manner.

摘要翻译： 本发明涉及制备纳米隙电极的方法和使用该方法的纳米凹槽装置，本发明的制备方法的特征在于还原金属通过从溶液中的金属离子的还原反应生长， 具有预定形状的金属图案。 根据本发明的制备纳米间隙电极的方法具有的优点是可以容易地以可再现和均匀的方式制备具有1-100nm的间隙距离的难以准备的常规方法的纳米间隙电极。

公开(公告)号：US08062596B2

公开(公告)日：2011-11-22

申请号：US12810461

申请日：2008-11-10

申请人： Wan Soo Yun ,  Hyung Ju Park ,  Cho Yeon Lee

发明人： Wan Soo Yun ,  Hyung Ju Park ,  Cho Yeon Lee

IPC分类号： G01N7/00 ,  G01N21/00

CPC分类号： G01N27/3278

摘要： The present invention relates to a nanoparticle sensor which is capable to identify an existence/nonexistence, a concentration, a size distribution and a component of the nanoparticles using an electrode pair having a separated distance of a nano-gap, in which the nanoparticle sensor includes a unit element configured with a plurality of unit electrodes electrically operated independently from each other and detects the nanoparticles based on the number of the unit electrodes electrically changed due to the nanoparticles captured into the nano-gap. The nanoparticle sensor of the present invention can detect the component, the size, the size distribution and the concentration of the nanoparticles by single measurement, have high reliability and regeneration while reducing a detection time by statistical method via a plurality of electrode pairs having the nano-gap, and detect even very low concentration of nanoparticles.

摘要翻译： 本发明涉及一种纳米粒子传感器，其能够使用具有分离的纳米间隙的距离的电极对来识别纳米颗粒的存在/不存在，浓度，尺寸分布和组分，其中纳米颗粒传感器包括 单元元件，其配置有彼此独立地电操作的多个单元电极，并且基于由于捕获到纳米间隙中的纳米颗粒而电变化的单位电极的数量来检测纳米颗粒。 本发明的纳米颗粒传感器可以通过单次测量来检测纳米颗粒的组分，尺寸，尺寸分布和浓度，具有高的可靠性和再生能力，同时通过统计方法通过具有纳米尺度的多个电极对减少检测时间 并且检测到甚至非常低浓度的纳米颗粒。

公开(公告)号：US20110146775A1

公开(公告)日：2011-06-23

申请号：US13061297

申请日：2009-08-28

申请人： Kyung Joong Kim ,  Woo Lee ,  Yong Sung Kim ,  Young Heon Kim ,  Seung hui Hong ,  Wan Soo Yun ,  Sang Woo Kang

发明人： Kyung Joong Kim ,  Woo Lee ,  Yong Sung Kim ,  Young Heon Kim ,  Seung hui Hong ,  Wan Soo Yun ,  Sang Woo Kang

IPC分类号： H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/035218 ,  H01L31/18

摘要： The present invention provides a semiconductor based photovoltaic device and a manufacturing method thereof. The semiconductor based photovoltaic device is able to absorb light with a wide band wavelength, and has high photoelectric conversion efficiency since it has high electron-hole pair separation efficiency. More specifically, the method for manufacturing the photovoltaic device comprises the steps of: a) forming a thin semiconductor quantum dot film on a p or n-type semiconductor substrate, wherein the thin semiconductor quantum dot film includes semiconductor quantum dots inside a medium at which the same type of impurities as the semiconductor substrate are doped; b) forming a pore array through partial etching, wherein the pore array penetrates the thin semiconductor quantum dot film; c) depositing a semiconductor in which complementary impurities to the semiconductor substrate are doped on the thin semiconductor quantum dot film at which the pore array is formed; and d) forming sequentially a transparent conductive film and an upper electrode on the semiconductor in which the complementary impurities are doped and forming a lower electrode at a lower portion of the semiconductor substrate.

摘要翻译： 本发明提供一种基于半导体的光电器件及其制造方法。 基于半导体的光电器件能够吸收宽带波长的光，并且由于具有高的电子 - 空穴对分离效率，因此光电转换效率高。 更具体地说，制造光伏器件的方法包括以下步骤：a）在p型或n型半导体衬底上形成薄的半导体量子点膜，其中薄的半导体量子点膜包括介质内的半导体量子点， 与半导体衬底掺杂相同类型的杂质; b）通过部分蚀刻形成孔阵列，其中孔阵列穿透薄的半导体量子点膜; c）在其上形成有孔阵列的薄半导体量子点膜上沉积半导体衬底掺杂了杂质的半导体; 以及d）在所述半导体上顺序形成透明导电膜和上电极，其中所述互补杂质被掺杂并在所述半导体衬底的下部形成下电极。

公开(公告)号：US20100282605A1

公开(公告)日：2010-11-11

申请号：US12810461

申请日：2008-11-10

申请人： Wan Soo Yun ,  Hyung Ju Park ,  Cho Yeon Lee

发明人： Wan Soo Yun ,  Hyung Ju Park ,  Cho Yeon Lee

IPC分类号： G01N27/00

CPC分类号： G01N27/3278

摘要： The present invention relates to a nanoparticle sensor which is capable to identify an existence/nonexistence, a concentration, a size distribution and a component of the nanoparticles using an electrode pair having a separated distance of a nano-gap, in which the nanoparticle sensor includes a unit element configured with a plurality of unit electrodes electrically operated independently from each other and detects the nanoparticles based on the number of the unit electrodes electrically changed due to the nanoparticles captured into the nano-gap. The nanoparticle sensor of the present invention can detect the component, the size, the size distribution and the concentration of the nanoparticles by single measurement, have high reliability and regeneration while reducing a detection time by statistical method via a plurality of electrode pairs having the nano-gap, and detect even very low concentration of nanoparticles.

摘要翻译： 本发明涉及一种纳米粒子传感器，其能够使用具有分离的纳米间隙的距离的电极对来识别纳米颗粒的存在/不存在，浓度，尺寸分布和组分，其中纳米颗粒传感器包括 单元元件，其配置有彼此独立地电操作的多个单元电极，并且基于由于捕获到纳米间隙中的纳米颗粒而电变化的单位电极的数量来检测纳米颗粒。 本发明的纳米颗粒传感器可以通过单次测量来检测纳米颗粒的组分，尺寸，尺寸分布和浓度，具有高的可靠性和再生能力，同时通过统计方法通过具有纳米尺度的多个电极对减少检测时间 并且检测到甚至非常低浓度的纳米颗粒。

公开(公告)号：US07557044B2

公开(公告)日：2009-07-07

申请号：US11263476

申请日：2005-10-31

申请人： Yong Ju Yun ,  Chil Seong Ah ,  Dong Han Ha ,  Hyung Ju Park ,  Wan Soo Yun ,  Kwang Cheol Lee ,  Gwang Seo Park

发明人： Yong Ju Yun ,  Chil Seong Ah ,  Dong Han Ha ,  Hyung Ju Park ,  Wan Soo Yun ,  Kwang Cheol Lee ,  Gwang Seo Park

IPC分类号： H01L21/302

CPC分类号： B81C99/0095 ,  B81B2201/035 ,  B81C2201/0143 ,  Y10S977/883 ,  Y10S977/888

摘要： Disclosed herein is a method of fabricating nano-components using nanoplates, including the steps of: printing a grid on a substrate using photolithography and Electron Beam Lithography; spraying an aqueous solution dispersed with nanoplates onto the grid portion to position the nanoplates on the substrate; depositing a protective film of a predetermined thickness on the substrate and the nanoplates positioned on the substrate; ion-etching the nanoplates deposited with the protective film by using a Focused Ion Beam (FIB) or Electron Beam Lithography; and eliminating the protective film remaining on the substrate using a protective film remover after the ion-etching of the nanoplates, and a method of manufacturing nanomachines or nanostructures by transporting such nano-components using a nano probe and assembling with other nano-components. The present invention makes it possible to fabricate the high-quality nano-components in a more simple and easier manner at a lower cost, as compared to other conventional methods. Further, the present invention provides a method of implementing nanomachines through combination of such nano-components and biomolecules, etc.

摘要翻译： 本文公开了使用纳米板制造纳米组分的方法，包括以下步骤：使用光刻和电子束光刻在衬底上印刷栅格; 将分散有纳米板的水溶液喷射到栅格部分上以将纳米板定位在基底上; 在衬底和位于衬底上的纳米板上沉积预定厚度的保护膜; 通过使用聚焦离子束（FIB）或电子束光刻法离子蚀刻沉积有保护膜的纳米板; 并且在纳米板的离子蚀刻之后使用保护膜去除剂去除残留在基板上的保护膜，以及通过使用纳米探针传输这种纳米成分并与其他纳米成分组装来制造纳米机械或纳米结构的方法。 与其他常规方法相比，本发明可以以更简单和更容易的方式以更低的成本制造高质量的纳米组分。 此外，本发明提供了通过这些纳米组分和生物分子等的组合来实现纳米机器的方法。