公开(公告)号：US08030132B2

公开(公告)日：2011-10-04

申请号：US11442216

申请日：2006-05-30

申请人： Kaori Ogita ,  Tomoko Tamura

发明人： Kaori Ogita ,  Tomoko Tamura

IPC分类号： H01L21/027 ,  H01L31/0392

CPC分类号： H01L27/12 ,  H01L21/84

摘要： To simplify a peeling step in a method for manufacturing a semiconductor device including the peeling step. A first layer having a metal film is formed over a substrate; a second layer having a transistor is formed over the first layer having the metal film; a resin material is applied over the layer having the transistor; the resin material is cured by a heat treatment at a first heat treatment temperature to form a resin layer; the layer having the transistor is peeled from the substrate by a heat treatment at a second heat treatment temperature which is higher than the first heat treatment temperature; and the resin layer is peeled from the layer having the transistor by a heat treatment at a third heat treatment temperature which is higher than the second heat treatment temperature.

摘要翻译： 为了简化包括剥离步骤的半导体器件的制造方法中的剥离步骤。 在基板上形成具有金属膜的第一层; 在具有金属膜的第一层上形成具有晶体管的第二层; 在具有晶体管的层上施加树脂材料; 通过在第一热处理温度下的热处理固化树脂材料，以形成树脂层; 通过在比第一热处理温度高的第二热处理温度下进行热处理从晶片上剥离具有晶体管的层; 在比第二热处理温度高的第三热处理温度下进行热处理，从具有晶体管的层剥离树脂层。

公开(公告)号：US07588969B2

公开(公告)日：2009-09-15

申请号：US11417182

申请日：2006-05-04

申请人： Kaori Ogita ,  Tomoko Tamura ,  Junya Maruyama ,  Koji Dairiki

发明人： Kaori Ogita ,  Tomoko Tamura ,  Junya Maruyama ,  Koji Dairiki

IPC分类号： H01L21/00

CPC分类号： H01L27/13 ,  H01L21/7813 ,  H01L27/1266 ,  H01L27/1292

摘要： The present invention provides a manufacturing method of a thinned semiconductor device with high reliability at low cost and a semiconductor device manufactured by the method. A peeling layer, a transistor, and an insulating layer are formed in this order over a substrate, an opening is formed so as to expose at least a part of the peeling layer, and the transistor is peeled off from the substrate by a physical means. The peeling layer is formed by forming a metal film and a metal oxide film so as to be in contact with the metal film by a method using a solution.

摘要翻译： 本发明提供一种以低成本实现高可靠性的薄型半导体器件的制造方法以及通过该方法制造的半导体器件。 在衬底上依次形成剥离层，晶体管和绝缘层，形成开口以使至少一部分剥离层露出，并且晶体管通过物理手段从衬底剥离 。 通过使用溶液的方法，通过形成金属膜和金属氧化物膜以与金属膜接触来形成剥离层。

公开(公告)号：US20060270189A1

公开(公告)日：2006-11-30

申请号：US11442216

申请日：2006-05-30

申请人： Kaori Ogita ,  Tomoko Tamura

发明人： Kaori Ogita ,  Tomoko Tamura

IPC分类号： H01L21/46 ,  H01L23/00

CPC分类号： H01L27/12 ,  H01L21/84

摘要： To simplify a peeling step in a method for manufacturing a semiconductor device including the peeling step. A first layer having a metal film is formed over a substrate; a second layer having a transistor is formed over the first layer having the metal film; a resin material is applied over the layer having the transistor; the resin material is cured by a heat treatment at a first heat treatment temperature to form a resin layer; the layer having the transistor is peeled from the substrate by a heat treatment at a second heat treatment temperature which is higher than the first heat treatment temperature; and the resin layer is peeled from the layer having the transistor by a heat treatment at a third heat treatment temperature which is higher than the second heat treatment temperature.

摘要翻译： 为了简化包括剥离步骤的半导体器件的制造方法中的剥离步骤。 在基板上形成具有金属膜的第一层; 在具有金属膜的第一层上形成具有晶体管的第二层; 在具有晶体管的层上施加树脂材料; 通过在第一热处理温度下的热处理固化树脂材料，以形成树脂层; 通过在比第一热处理温度高的第二热处理温度下进行热处理从晶片上剥离具有晶体管的层; 在比第二热处理温度高的第三热处理温度下进行热处理，从具有晶体管的层剥离树脂层。

公开(公告)号：US07465674B2

公开(公告)日：2008-12-16

申请号：US11437983

申请日：2006-05-22

申请人： Tomoko Tamura ,  Kaori Ogita ,  Koji Dairiki ,  Junya Maruyama

发明人： Tomoko Tamura ,  Kaori Ogita ,  Koji Dairiki ,  Junya Maruyama

IPC分类号： H01L21/311

CPC分类号： H01L27/1266 ,  H01L21/7806 ,  H01L27/1214

摘要： An object of the present invention is to provide a method for manufacturing a semiconductor device with high reliability, at low cost, in which an element forming layer having a thin film transistor and the like provided over a substrate is peeled from the substrate, so that a semiconductor device is manufactured. According to the invention, a metal film is formed over a substrate, a plasma treatment is performed to the metal film in a dinitrogen monoxide atmosphere to form a metal oxide film over the metal film, a first insulating film is formed continuously without being exposed to the air, an element forming layer is formed over the first insulating film, and the element forming layer is peeled from the substrate, so that a semiconductor device is manufactured.

摘要翻译： 本发明的目的是提供一种以低成本制造具有高可靠性的半导体器件的方法，其中设置在衬底上的薄膜晶体管等的元件形成层从衬底上剥离，使得 制造半导体器件。 根据本发明，在基板上形成金属膜，在一氧化二氮气氛中对金属膜进行等离子体处理，在金属膜上形成金属氧化物膜，连续形成第一绝缘膜而不暴露于 在第一绝缘膜上形成元件形成层的空气，并且元件形成层从基板剥离，从而制造半导体器件。

公开(公告)号：US20060270191A1

公开(公告)日：2006-11-30

申请号：US11437983

申请日：2006-05-22

申请人： Tomoko Tamura ,  Kaori Ogita ,  Koji Dairiki ,  Junya Maruyama

发明人： Tomoko Tamura ,  Kaori Ogita ,  Koji Dairiki ,  Junya Maruyama

IPC分类号： H01L21/30

CPC分类号： H01L27/1266 ,  H01L21/7806 ,  H01L27/1214

摘要： An object of the present invention is to provide a method for manufacturing a semiconductor device with high reliability, at low cost, in which an element forming layer having a thin film transistor and the like provided over a substrate is peeled from the substrate, so that a semiconductor device is manufactured. According to the invention, a metal film is formed over a substrate, a plasma treatment is performed to the metal film in a dinitrogen monoxide atmosphere to form a metal oxide film over the metal film, a first insulating film is formed continuously without being exposed to the air, an element forming layer is formed over the first insulating film, and the element forming layer is peeled from the substrate, so that a semiconductor device is manufactured.

摘要翻译： 本发明的目的是提供一种以低成本制造具有高可靠性的半导体器件的方法，其中设置在衬底上的薄膜晶体管等的元件形成层从衬底上剥离，使得 制造半导体器件。 根据本发明，在基板上形成金属膜，在一氧化二氮气氛中对金属膜进行等离子体处理，在金属膜上形成金属氧化物膜，连续形成第一绝缘膜而不暴露于 在第一绝缘膜上形成元件形成层的空气，并且元件形成层从基板剥离，从而制造半导体器件。

公开(公告)号：US20060266410A1

公开(公告)日：2006-11-30

申请号：US11417182

申请日：2006-05-04

申请人： Kaori Ogita ,  Tomoko Tamura ,  Junya Maruyama ,  Koji Dairiki

发明人： Kaori Ogita ,  Tomoko Tamura ,  Junya Maruyama ,  Koji Dairiki

IPC分类号： H01L31/00

CPC分类号： H01L27/13 ,  H01L21/7813 ,  H01L27/1266 ,  H01L27/1292

摘要： The present invention provides a manufacturing method of a thinned semiconductor device with high reliability at low cost and a semiconductor device manufactured by the method. A peeling layer, a transistor, and an insulating layer are formed in this order over a substrate, an opening is formed so as to expose at least a part of the peeling layer, and the transistor is peeled off from the substrate by a physical means. The peeling layer is formed by forming a metal film and a metal oxide film so as to be in contact with the metal film by a method using a solution.

公开(公告)号：US08530335B2

公开(公告)日：2013-09-10

申请号：US13071629

申请日：2011-03-25

申请人： Tomoko Tamura ,  Eiji Sugiyama ,  Yoshitaka Dozen ,  Koji Dairiki ,  Takuya Tsurume

发明人： Tomoko Tamura ,  Eiji Sugiyama ,  Yoshitaka Dozen ,  Koji Dairiki ,  Takuya Tsurume

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/302 ,  H01L21/461 ,  H01L23/58

CPC分类号： H01L21/02381 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/13 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/81001

摘要： A release layer formed over a substrate; at least one of thin film integrated circuits is formed over the release layer; a film is formed over each of the at least one of thin film integrated circuits; and the release layer is removed by using an etchant; thus, the at least one of thin film integrated circuits is peeled from the substrate. A semiconductor device is formed by sealing the peeled thin film integrated circuit by lamination or the like.

摘要翻译： 形成在衬底上的释放层; 在剥离层上形成薄膜集成电路中的至少一个; 在薄膜集成电路中的至少一个上形成膜; 并通过使用蚀刻剂除去释放层; 因此，薄膜集成电路中的至少一个从基板剥离。 半导体器件通过层压等密封剥离的薄膜集成电路而形成。

公开(公告)号：US20080093464A1

公开(公告)日：2008-04-24

申请号：US11660165

申请日：2005-08-10

申请人： Koji Dairiki ,  Junya Maruyama ,  Tomoko Tamura ,  Eiji Sugiyama ,  Yoshitaka Dozen

发明人： Koji Dairiki ,  Junya Maruyama ,  Tomoko Tamura ,  Eiji Sugiyama ,  Yoshitaka Dozen

IPC分类号： G06K19/06 ,  H01L21/84 ,  H01L29/786

CPC分类号： H01L27/1255 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78648

摘要： It is an object of the present invention to reduce the cost of a wireless chip, further, to reduce the cost of a wireless chip by enabling the mass production of a wireless chip, and furthermore, to provide a downsized and lightweight wireless chip. A wireless chip in which a thin film integrated circuit peeled from a glass substrate or a quartz substrate is formed between a first base material and a second base material is provided according to the invention. As compared with a wireless chip formed from a silicon substrate, the wireless chip according to the invention realizes downsizing, thinness, and lightweight. The thin film integrated circuit included in the wireless chip according to the invention at least has an n-type thin film transistor having an LDD (Lightly Doped Drain) structure, a p-type thin film transistor having a single drain structure, and a conductive layer functioning as an antenna.

摘要翻译： 本发明的目的在于降低无线芯片的成本，并且通过实现无线芯片的批量生产，进一步降低无线芯片的成本，此外，提供小型化，轻量化的无线芯片。 根据本发明，提供一种其中从玻璃基板或石英基板剥离的薄膜集成电路形成在第一基材和第二基材之间的无线芯片。 与由硅基板形成的无线芯片相比，根据本发明的无线芯片实现了小型化，薄型化和轻量化。 包括在根据本发明的无线芯片中的薄膜集成电路至少具有具有LDD（轻掺杂漏极）结构的n型薄膜晶体管，具有单个漏极结构的p型薄膜晶体管和导电 层作为天线起作用。

公开(公告)号：US08236629B2

公开(公告)日：2012-08-07

申请号：US13100316

申请日：2011-05-04

申请人： Yoshitaka Dozen ,  Tomoko Tamura ,  Takuya Tsurume ,  Koji Dairiki

发明人： Yoshitaka Dozen ,  Tomoko Tamura ,  Takuya Tsurume ,  Koji Dairiki

IPC分类号： H01L21/00 ,  H01L21/46

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/13 ,  H01L27/28 ,  H01L29/78603 ,  H01L2924/3511

摘要： Application form of and demand for an IC chip formed with a silicon wafer are expected to increase, and further reduction in cost is required. An object of the invention is to provide a structure of an IC chip and a process capable of producing at a lower cost. A feature of the invention is to use a metal film and a reactant having the metal film as a separation layer. An etching rate of the metal film or the reactant having metal is high, and a physical means in addition to a chemical means of etching the metal film or the reactant having metal can be used in the invention. Thus, the IDF chip can be manufactured more simply and easily in a short time.

摘要翻译： 预期由硅晶片形成的IC芯片的应用形式和需求将增加，并且需要进一步降低成本。 本发明的目的是提供一种IC芯片的结构和能够以较低成本生产的方法。 本发明的一个特征是使用具有金属膜的金属膜和反应物作为分离层。 金属膜或具有金属的反应物的蚀刻速率高，并且除了蚀刻金属膜的化学方法或具有金属的反应物之外的物理手段可以用于本发明。 因此，可以在短时间内更容易地制造IDF芯片。

公开(公告)号：US07482248B2

公开(公告)日：2009-01-27

申请号：US11274917

申请日：2005-11-16

申请人： Tomoko Tamura

发明人： Tomoko Tamura

IPC分类号： H01L21/30

CPC分类号： H01L21/02175 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/31122 ,  H01L21/3165 ,  H01L21/67207 ,  H01L27/1255 ,  H01L27/1266

摘要： A manufacturing method of a semiconductor device at low cost with high reliability, wherein a semiconductor device is manufactured by peeling an element forming layer having a thin film transistor and the like provided over a substrate from the substrate. A metal film is formed on a substrate, plasma treatment is applied thereto to form a metal oxide film on the metal film, an element forming layer is formed on the metal oxide film, an insulating film is formed to cover the element forming layer, an opening is formed in the insulating film and the element forming layer, an etchant is injected through the opening to remove the insulating film and the element forming layer, and the element forming layer is peeled off the substrate. The peeling may be performed by removing the metal film and the metal oxide film partially and then employing a physical means.

摘要翻译： 一种低成本，高可靠性的半导体器件的制造方法，其中通过从衬底上剥离设置在衬底上的具有薄膜晶体管等的元件形成层来制造半导体器件。 在基板上形成金属膜，施加等离子体处理，在金属膜上形成金属氧化物膜，在金属氧化物膜上形成元件形成层，形成覆盖元件形成层的绝缘膜， 在绝缘膜和元件形成层中形成开口，通过开口注入蚀刻剂以除去绝缘膜和元件形成层，并且元件形成层从基板剥离。 可以通过部分去除金属膜和金属氧化物膜然后采用物理手段来进行剥离。