公开(公告)号：US20060270189A1

公开(公告)日：2006-11-30

申请号：US11442216

申请日：2006-05-30

申请人： Kaori Ogita ,  Tomoko Tamura

发明人： Kaori Ogita ,  Tomoko Tamura

IPC分类号： H01L21/46 ,  H01L23/00

CPC分类号： H01L27/12 ,  H01L21/84

摘要： To simplify a peeling step in a method for manufacturing a semiconductor device including the peeling step. A first layer having a metal film is formed over a substrate; a second layer having a transistor is formed over the first layer having the metal film; a resin material is applied over the layer having the transistor; the resin material is cured by a heat treatment at a first heat treatment temperature to form a resin layer; the layer having the transistor is peeled from the substrate by a heat treatment at a second heat treatment temperature which is higher than the first heat treatment temperature; and the resin layer is peeled from the layer having the transistor by a heat treatment at a third heat treatment temperature which is higher than the second heat treatment temperature.

摘要翻译： 为了简化包括剥离步骤的半导体器件的制造方法中的剥离步骤。 在基板上形成具有金属膜的第一层; 在具有金属膜的第一层上形成具有晶体管的第二层; 在具有晶体管的层上施加树脂材料; 通过在第一热处理温度下的热处理固化树脂材料，以形成树脂层; 通过在比第一热处理温度高的第二热处理温度下进行热处理从晶片上剥离具有晶体管的层; 在比第二热处理温度高的第三热处理温度下进行热处理，从具有晶体管的层剥离树脂层。

公开(公告)号：US08030132B2

公开(公告)日：2011-10-04

申请号：US11442216

申请日：2006-05-30

申请人： Kaori Ogita ,  Tomoko Tamura

发明人： Kaori Ogita ,  Tomoko Tamura

IPC分类号： H01L21/027 ,  H01L31/0392

CPC分类号： H01L27/12 ,  H01L21/84

摘要： To simplify a peeling step in a method for manufacturing a semiconductor device including the peeling step. A first layer having a metal film is formed over a substrate; a second layer having a transistor is formed over the first layer having the metal film; a resin material is applied over the layer having the transistor; the resin material is cured by a heat treatment at a first heat treatment temperature to form a resin layer; the layer having the transistor is peeled from the substrate by a heat treatment at a second heat treatment temperature which is higher than the first heat treatment temperature; and the resin layer is peeled from the layer having the transistor by a heat treatment at a third heat treatment temperature which is higher than the second heat treatment temperature.

摘要翻译： 为了简化包括剥离步骤的半导体器件的制造方法中的剥离步骤。 在基板上形成具有金属膜的第一层; 在具有金属膜的第一层上形成具有晶体管的第二层; 在具有晶体管的层上施加树脂材料; 通过在第一热处理温度下的热处理固化树脂材料，以形成树脂层; 通过在比第一热处理温度高的第二热处理温度下进行热处理从晶片上剥离具有晶体管的层; 在比第二热处理温度高的第三热处理温度下进行热处理，从具有晶体管的层剥离树脂层。

公开(公告)号：US07465674B2

公开(公告)日：2008-12-16

申请号：US11437983

申请日：2006-05-22

申请人： Tomoko Tamura ,  Kaori Ogita ,  Koji Dairiki ,  Junya Maruyama

发明人： Tomoko Tamura ,  Kaori Ogita ,  Koji Dairiki ,  Junya Maruyama

IPC分类号： H01L21/311

CPC分类号： H01L27/1266 ,  H01L21/7806 ,  H01L27/1214

摘要： An object of the present invention is to provide a method for manufacturing a semiconductor device with high reliability, at low cost, in which an element forming layer having a thin film transistor and the like provided over a substrate is peeled from the substrate, so that a semiconductor device is manufactured. According to the invention, a metal film is formed over a substrate, a plasma treatment is performed to the metal film in a dinitrogen monoxide atmosphere to form a metal oxide film over the metal film, a first insulating film is formed continuously without being exposed to the air, an element forming layer is formed over the first insulating film, and the element forming layer is peeled from the substrate, so that a semiconductor device is manufactured.

摘要翻译： 本发明的目的是提供一种以低成本制造具有高可靠性的半导体器件的方法，其中设置在衬底上的薄膜晶体管等的元件形成层从衬底上剥离，使得 制造半导体器件。 根据本发明，在基板上形成金属膜，在一氧化二氮气氛中对金属膜进行等离子体处理，在金属膜上形成金属氧化物膜，连续形成第一绝缘膜而不暴露于 在第一绝缘膜上形成元件形成层的空气，并且元件形成层从基板剥离，从而制造半导体器件。

公开(公告)号：US20060270191A1

公开(公告)日：2006-11-30

申请号：US11437983

申请日：2006-05-22

申请人： Tomoko Tamura ,  Kaori Ogita ,  Koji Dairiki ,  Junya Maruyama

发明人： Tomoko Tamura ,  Kaori Ogita ,  Koji Dairiki ,  Junya Maruyama

IPC分类号： H01L21/30

CPC分类号： H01L27/1266 ,  H01L21/7806 ,  H01L27/1214

摘要： An object of the present invention is to provide a method for manufacturing a semiconductor device with high reliability, at low cost, in which an element forming layer having a thin film transistor and the like provided over a substrate is peeled from the substrate, so that a semiconductor device is manufactured. According to the invention, a metal film is formed over a substrate, a plasma treatment is performed to the metal film in a dinitrogen monoxide atmosphere to form a metal oxide film over the metal film, a first insulating film is formed continuously without being exposed to the air, an element forming layer is formed over the first insulating film, and the element forming layer is peeled from the substrate, so that a semiconductor device is manufactured.

摘要翻译： 本发明的目的是提供一种以低成本制造具有高可靠性的半导体器件的方法，其中设置在衬底上的薄膜晶体管等的元件形成层从衬底上剥离，使得 制造半导体器件。 根据本发明，在基板上形成金属膜，在一氧化二氮气氛中对金属膜进行等离子体处理，在金属膜上形成金属氧化物膜，连续形成第一绝缘膜而不暴露于 在第一绝缘膜上形成元件形成层的空气，并且元件形成层从基板剥离，从而制造半导体器件。

公开(公告)号：US20060266410A1

公开(公告)日：2006-11-30

申请号：US11417182

申请日：2006-05-04

申请人： Kaori Ogita ,  Tomoko Tamura ,  Junya Maruyama ,  Koji Dairiki

发明人： Kaori Ogita ,  Tomoko Tamura ,  Junya Maruyama ,  Koji Dairiki

IPC分类号： H01L31/00

CPC分类号： H01L27/13 ,  H01L21/7813 ,  H01L27/1266 ,  H01L27/1292

摘要： The present invention provides a manufacturing method of a thinned semiconductor device with high reliability at low cost and a semiconductor device manufactured by the method. A peeling layer, a transistor, and an insulating layer are formed in this order over a substrate, an opening is formed so as to expose at least a part of the peeling layer, and the transistor is peeled off from the substrate by a physical means. The peeling layer is formed by forming a metal film and a metal oxide film so as to be in contact with the metal film by a method using a solution.

公开(公告)号：US07588969B2

公开(公告)日：2009-09-15

申请号：US11417182

申请日：2006-05-04

申请人： Kaori Ogita ,  Tomoko Tamura ,  Junya Maruyama ,  Koji Dairiki

发明人： Kaori Ogita ,  Tomoko Tamura ,  Junya Maruyama ,  Koji Dairiki

IPC分类号： H01L21/00

CPC分类号： H01L27/13 ,  H01L21/7813 ,  H01L27/1266 ,  H01L27/1292

摘要： The present invention provides a manufacturing method of a thinned semiconductor device with high reliability at low cost and a semiconductor device manufactured by the method. A peeling layer, a transistor, and an insulating layer are formed in this order over a substrate, an opening is formed so as to expose at least a part of the peeling layer, and the transistor is peeled off from the substrate by a physical means. The peeling layer is formed by forming a metal film and a metal oxide film so as to be in contact with the metal film by a method using a solution.

摘要翻译： 本发明提供一种以低成本实现高可靠性的薄型半导体器件的制造方法以及通过该方法制造的半导体器件。 在衬底上依次形成剥离层，晶体管和绝缘层，形成开口以使至少一部分剥离层露出，并且晶体管通过物理手段从衬底剥离 。 通过使用溶液的方法，通过形成金属膜和金属氧化物膜以与金属膜接触来形成剥离层。

公开(公告)号：US08039353B2

公开(公告)日：2011-10-18

申请号：US12854060

申请日：2010-08-10

申请人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

发明人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

IPC分类号： H01L21/027 ,  H01L21/033 ,  H01L21/78

CPC分类号： H01L23/293 ,  H01L23/49855 ,  H01L23/66 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/13 ,  H01L28/10 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer. In addition, a substrate covering an element formation layer side is a substrate having a support on its surface is used in the manufacturing process.

摘要翻译： 本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。 半导体器件具有被绝缘层覆盖的至少一个表面，该绝缘层用作用于保护的衬底。 在半导体器件中，绝缘层形成在用作天线的导电层上，使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2，并且该值 在导电层上形成的绝缘层与导电层的厚度比为至少0.2。 此外，导电层而不是绝缘层不会在半导体器件的侧面露出，并且绝缘层覆盖TFT和导电层。 此外，在制造过程中使用覆盖元件形成层侧的基板是其表面上具有支撑体的基板。

公开(公告)号：US20080012126A1

公开(公告)日：2008-01-17

申请号：US11819157

申请日：2007-06-25

申请人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Kaori Ogita ,  Naoto Kusumoto

发明人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Kaori Ogita ,  Naoto Kusumoto

IPC分类号： H01L23/06 ,  D21F13/00

CPC分类号： D21H21/48 ,  B32B29/00 ,  D21H27/32 ,  G06K19/07749 ,  H01L23/49855 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/1266 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

摘要： Paper embedded with a semiconductor device capable of communicating wirelessly is realized, whose unevenness of a portion including the semiconductor device does not stand out and the paper is thin with a thickness of less than or equal to 130 μm. A semiconductor device is provided with a circuit portion and an antenna, and the circuit portion includes a thin film transistor. The circuit portion and the antenna are separated from a substrate used during manufacturing, and are interposed between a flexible base and a sealing layer and protected. The semiconductor device can be bent, and the thickness of the semiconductor device itself is less than or equal to 30 μm. The semiconductor device is embedded in a paper in a papermaking process.

摘要翻译： 实现了能够无线通信的半导体器件的纸张，其中包括半导体器件的部分的不均匀性不突出，并且纸薄，厚度小于或等于130μm。 半导体器件设置有电路部分和天线，并且电路部分包括薄膜晶体管。 电路部分和天线与在制造期间使用的基板分离，并且被插入在柔性基底和密封层之间并被保护。 半导体器件可以弯曲，并且半导体器件本身的厚度小于或等于30μm。 半导体器件以造纸工艺嵌入纸中。

公开(公告)号：US10570113B2

公开(公告)日：2020-02-25

申请号：US13078388

申请日：2011-04-01

申请人： Kaori Ogita ,  Tsunenori Suzuki ,  Satoshi Seo

发明人： Kaori Ogita ,  Tsunenori Suzuki ,  Satoshi Seo

IPC分类号： C09K11/06 ,  H01L51/00 ,  H01L51/50 ,  C07D307/91 ,  C07D333/76 ,  H05B33/14 ,  H05B33/28

摘要： Provided is a novel aromatic amine derivative represented by General Formula (G1) below. (In the formula, A represents oxygen or sulfur, and R1 to R7 individually represent any of a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted phenyl group, and a substituted or unsubstituted biphenyl group. In addition, α1 and α2 individually represent a substituted or unsubstituted phenylene group. Further, Ar1 represents a substituted or unsubstituted condensed aromatic hydrocarbon having 14 to 18 carbon atoms included in a ring. Further, Ar2 represents a substituted or unsubstituted aryl group having 6 to 13 carbon atoms included in a ring. Further, j and n are individually 0 or 1, and p is 1 or 2.).

公开(公告)号：US08674114B2

公开(公告)日：2014-03-18

申请号：US13469619

申请日：2012-05-11

申请人： Sachiko Kawakami ,  Kaori Ogita ,  Nobuharu Ohsawa ,  Hiromi Seo ,  Satoshi Seo

发明人： Sachiko Kawakami ,  Kaori Ogita ,  Nobuharu Ohsawa ,  Hiromi Seo ,  Satoshi Seo

IPC分类号： C07D409/14

CPC分类号： C07D209/86 ,  C07D405/14 ,  C07D409/10 ,  C07D409/14 ,  C07D471/04

摘要： A novel carbazole compound that can be used for a transport layer, a host material, or a light-emitting material in a light-emitting element. In the carbazole compound, two carbazole skeletons each include carbazole, the 3-position of which is bonded to the 4-position of a dibenzofuran skeleton or a dibenzothiophene skeleton and these two carbazole skeletons are linked via benzene or biphenyl. The carbazole compound has an excellent carrier-transport property and a wide energy gap and can be suitably used for a material in a light-emitting element or for an organic semiconductor material.

摘要翻译： 可用于发光元件中的输送层，主体材料或发光材料的新型咔唑化合物。 在咔唑化合物中，两个咔唑骨架各自包含咔唑，其3-位与二苯并呋喃骨架或二苯并噻吩骨架的4-位结合，并且这两个咔唑骨架通过苯或联苯连接。 咔唑化合物具有优异的载流子传输性和宽的能隙，并且可以适用于发光元件或有机半导体材料中的材料。