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    Methods for retrieving shapes and drawings
    1.
    发明授权
    Methods for retrieving shapes and drawings 有权
    检索形状和图纸的方法

    公开(公告)号：US07583272B2

    公开(公告)日：2009-09-01

    申请号：US11288911

    申请日：2005-11-29

    申请人： Karthik Ramani ,  Jiantao Pu

    发明人： Karthik Ramani ,  Jiantao Pu

    IPC分类号： G09G5/00

    CPC分类号： G06K9/6204 ,  G06F17/30277 ,  G06F17/50 ,  G06K9/00208 ,  G06K9/00476 ,  G06K9/482 ,  G06T15/10 ,  G06T19/00

    摘要： There are disclosed methods to provide stable pose determinations of various three dimensional shapes. Methods are also disclosed for determining multiple, unique drawing descriptors for two dimensional drawings, and for obtaining intermediate three dimensional representations of two dimensional drawings as one way to determine the descriptor. Methods are also disclosed to provide for searching of two dimensional drawings and three dimensional shapes using user-defined input, which may be a drawing or sketch. User interactivity is provided to further refine search results.

    摘要翻译： 公开了提供各种三维形状的稳定姿势确定的方法。 还公开了用于确定用于二维绘图的多个独特绘图描述符以及用于获得二维绘图的中间三维表示作为确定描述符的一种方式的方法。 还公开了用于使用用户定义的输入来搜索二维图形和三维形状的方法，其可以是图纸或草图。 提供用户交互以进一步优化搜索结果。

    Sketch beautification
    2.
    发明申请
    Sketch beautification 审中-公开
    草图美化

    公开(公告)号：US20060227140A1

    公开(公告)日：2006-10-12

    申请号：US11385459

    申请日：2006-03-21

    申请人： Karthik Ramani ,  Jiantao Pu

    发明人： Karthik Ramani ,  Jiantao Pu

    IPC分类号： G06T11/20

    CPC分类号： G06T11/203 ,  G06K9/00416 ,  G06K9/00422 ,  G06K9/00476 ,  G06K9/4604 ,  G06K9/6206 ,  G06T7/12 ,  G06T2207/20164 ,  G06T2207/20168

    摘要： There are disclosed methods to provide methods for beautifying sketches. Methods are disclosed for determining segments of drawings that represent geometric primitives and implied geometric constraints. Beautification methods provide for replacement of sketched primitives and over- and under-sketched drawings. After beautification methods provide for checking the initial segmentation of the sketch to determine whether false segmentation points were identified. Methods are also disclosed to provide for searching of drawings based upon a beautified sketch. User interactivity is provided to further refine search results.

    摘要翻译： 公开了提供美化草图的方法的方法。 公开了用于确定表示几何图元和隐含几何约束的图形段的方法。 美化方法提供了草图原语的替换和草图和草图的草图。 美化方法提供检查草图的初始分割以确定是否识别假分割点。 还公开了基于美化草图来搜索图纸的方法。 提供用户交互以进一步优化搜索结果。

    METHODS FOR RETRIEVING SHAPES AND DRAWINGS
    4.
    发明申请
    METHODS FOR RETRIEVING SHAPES AND DRAWINGS 有权
    检索形状和图形的方法

    公开(公告)号：US20100076959A1

    公开(公告)日：2010-03-25

    申请号：US12551712

    申请日：2009-09-01

    申请人： Karthik Ramani ,  Jiantao Pu

    发明人： Karthik Ramani ,  Jiantao Pu

    IPC分类号： G06F17/30

    CPC分类号： G06K9/6204 ,  G06F17/30277 ,  G06F17/50 ,  G06K9/00208 ,  G06K9/00476 ,  G06K9/482 ,  G06T15/10 ,  G06T19/00

    摘要： There are disclosed methods to provide stable pose determinations of various three dimensional shapes. Methods are also disclosed for determining multiple, unique drawing descriptors for two dimensional drawings, and for obtaining intermediate three dimensional representations of two dimensional drawings as one way to determine the descriptor. Methods are also disclosed to provide for searching of two dimensional drawings and three dimensional shapes using user-defined input, which may be a drawing or sketch. User interactivity is provided to further refine search results.

    摘要翻译： 公开了提供各种三维形状的稳定姿势确定的方法。 还公开了用于确定用于二维绘图的多个独特绘图描述符以及用于获得二维绘图的中间三维表示作为确定描述符的一种方式的方法。 还公开了用于使用用户定义的输入来搜索二维图形和三维形状的方法，其可以是图纸或草图。 提供用户交互以进一步优化搜索结果。

    METHOD AND APPARATUS FOR ON-CHIP TEMPERATURE
    6.
    发明申请
    METHOD AND APPARATUS FOR ON-CHIP TEMPERATURE 审中-公开
    芯片温度的方法和装置

    公开(公告)号：US20130166885A1

    公开(公告)日：2013-06-27

    申请号：US13531013

    申请日：2012-06-22

    申请人： Karthik Ramani ,  Stephen Presant ,  John Brothers

    发明人： Karthik Ramani ,  Stephen Presant ,  John Brothers

    IPC分类号： G01K3/00 ,  G06F9/30

    CPC分类号： G06F9/4893 ,  G01K7/427 ,  G06F1/20 ,  Y02D10/24

    摘要： When an instruction is executed on an integrated circuit (IC), an activity level and temperature are measured. A relationship between the activity level and temperature is determined, to estimate the temperature from the activity level. The activity level is monitored and is input to a scheduler, which estimates the IC temperature based on the activity level. The scheduler distributes work taking into account the temperature of various IC regions and may include distributing work to the IC region that has a lowest estimated temperature or relatively lower estimated temperature (e.g., lower than the average IC or IC region temperature). When the utilization level of one or more IC regions is high, the scheduler is configured to reduce the clock speed or the voltage of the one or more IC regions, or flag the regions as being unavailable for additional workload.

    摘要翻译： 当在集成电路（IC）上执行指令时，测量活动电平和温度。 确定活动水平和温度之间的关系，从活动水平估算温度。 监视活动级别，并将其输入到调度程序中，该调度程序将根据活动级别估算IC温度。 调度器考虑各种IC区域的温度来分配工作，并且可以包括将工作分配到具有最低估计温度或相对较低估计温度（例如低于平均IC或IC区域温度）的IC区域。 当一个或多个IC区域的使用级别高时，调度器被配置为降低一个或多个IC区域的时钟速度或电压，或将该区域标记为不可用于额外的工作负载。

    METHOD FOR FABRICATING A DRAM CAPACITOR
    7.
    发明申请
    METHOD FOR FABRICATING A DRAM CAPACITOR 有权
    制造DRAM电容器的方法

    公开(公告)号：US20120262835A1

    公开(公告)日：2012-10-18

    申请号：US13084666

    申请日：2011-04-12

    申请人： Karthik Ramani ,  Nobumichi Fuchigami ,  Wim Deweerd ,  Hanhong Chen ,  Hiroyuki Ode

    发明人： Karthik Ramani ,  Nobumichi Fuchigami ,  Wim Deweerd ,  Hanhong Chen ,  Hiroyuki Ode

    IPC分类号： H01L21/02 ,  H01G4/008

    CPC分类号： H01L28/40 ,  H01G4/1218 ,  H01G4/33 ,  H01L28/60 ,  H01L28/75 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49002

    摘要： A method for fabricating a dynamic random access memory (DRAM) capacitor stack is disclosed wherein the stack includes a first electrode, a dielectric layer, and a second electrode. The first electrode is formed from a conductive binary metal compound and the conductive binary metal compound is annealed in a reducing atmosphere to promote the formation of a desired crystal structure. The binary metal compound may be a metal oxide. Annealing the metal oxide (i.e. molybdenum oxide) in a reducing atmosphere may result in the formation of a first electrode material (i.e. MoO2) with a rutile-phase crystal structure. This facilitates the formation of the rutile-phase crystal structure when TiO2 is used as the dielectric layer. The rutile-phase of TiO2 has a higher k value than the other possible crystal structures of TiO2 resulting in improved performance of the DRAM capacitor.

    摘要翻译： 公开了一种用于制造动态随机存取存储器（DRAM）电容器堆叠的方法，其中堆叠包括第一电极，电介质层和第二电极。 第一电极由导电二元金属化合物形成，并且导电二元金属化合物在还原气氛中退火以促进所需晶体结构的形成。 二元金属化合物可以是金属氧化物。 在还原气氛中退火金属氧化物（即氧化钼）可导致形成具有金红石相晶体结构的第一电极材料（即MoO 2）。 当使用TiO 2作为电介质层时，这有助于金红石相晶体结构的形成。 TiO 2的金红石相具有比其他可能的TiO 2晶体结构更高的k值，从而改善了DRAM电容器的性能。