Organic rare-earth salt phosphor
    1.
    发明授权
    Organic rare-earth salt phosphor 失效
    有机稀土盐荧光粉

    公开(公告)号:US4572803A

    公开(公告)日:1986-02-25

    申请号:US393678

    申请日:1982-06-30

    IPC分类号: C09K11/06 C09K11/477

    CPC分类号: C09K11/06

    摘要: Rare-earth metal salts of organic carboxylic acids of this invention constitute themselves phosphors which exhibit unusually high luminescence efficiency, excel in chemical and physical stability and weatherability, show high affinity for other chemical substances and promise extensive usefulness in the field of high-performance luminescent products.

    摘要翻译: 本发明的有机羧酸的稀土金属盐本身构成荧光体,它们具有非常高的发光效率,优异的化学和物理稳定性和耐候性,对其它化学物质表现出高亲和力,并且在高性能发光领域具有广泛的用途 产品。

    Organic europlum salt phosphor
    2.
    发明授权
    Organic europlum salt phosphor 失效
    有机欧米茄盐磷光体

    公开(公告)号:US4443380A

    公开(公告)日:1984-04-17

    申请号:US180324

    申请日:1980-08-22

    IPC分类号: C09K11/06 C09K11/46

    CPC分类号: C09K11/06

    摘要: Rare-earth metal salts of organic carboxylic acids of this invention constitute themselves phosphors which exhibit unusually high luminescence efficiency, excel in chemical and physical stability and weatherability, show high affinity for other chemical substances and promise extensive usefulness in the field of high-performance luminescent products.

    摘要翻译: 本发明的有机羧酸的稀土金属盐本身构成荧光体,它们具有非常高的发光效率,优异的化学和物理稳定性和耐候性,对其它化学物质表现出高亲和力,并且在高性能发光领域具有广泛的用途 产品。

    Inorganic foam and preparation thereof
    5.
    发明授权
    Inorganic foam and preparation thereof 失效
    无机泡沫及其制备方法

    公开(公告)号:US4207113A

    公开(公告)日:1980-06-10

    申请号:US858425

    申请日:1977-12-07

    CPC分类号: C04B28/34 C04B28/342

    摘要: A highly expanded inorganic foam containing discrete cells with an average diameter of 3 mm or less, being non-flammable with excellent thermal insulating property, heat resistant property as well as water resistance is found to be prepared by foaming and setting simultaneously at normal temperature by adding a suitable amount of a polyvalent metal carbonate to a stable aqueous solution dispersion of a metal phosphate with a specific atomic ratio of metal to phosphorus and a specific ratio of metal valences relative to phosphate ion valences.

    摘要翻译: 发现包含平均直径为3mm以下的离散单元的高度膨胀的无机泡沫,具有优异的隔热性,不耐热性,耐热性以及耐水性的非易燃性,通过在常温下同时发泡和固化来制备 向金属磷的特定原子比的金属磷酸盐的稳定的水溶液分散液中添加适量的多价金属碳酸盐,相对于磷酸根离子价的金属价的比例。

    Automatic white balance system and automatic white balance control method
    6.
    发明授权
    Automatic white balance system and automatic white balance control method 有权
    自动白平衡系统和自动白平衡控制方式

    公开(公告)号:US07864222B2

    公开(公告)日:2011-01-04

    申请号:US11939179

    申请日:2007-11-13

    IPC分类号: H04N9/73

    CPC分类号: H04N9/735

    摘要: An automatic white balance system according to an embodiment of the invention comprises a color separation and synchronization unit which has a line memory for generating a white-balance-adjusted YUV signal, a color judgment unit which judges whether or not a white balance adjustment is needed, a white balance adjustment gain computation unit which calculates a white balance adjustment gain on the basis of the result of the judgment at the color judgment unit and the white-balance-adjusted YUV signal, a reciprocal computation unit which outputs the reciprocal transformation value of the white balance adjustment gain, and a second multiplier which multiplies the white-balance-adjusted YUV signal by the reciprocal transformation value.

    摘要翻译: 根据本发明的实施例的自动白平衡系统包括:色分离同步单元,具有用于产生白平衡调节的YUV信号的行存储器;颜色判断单元,判断是否需要白平衡调整 白平衡调整增益计算单元,其基于颜色判断单元和白平衡调节的YUV信号的判断结果来计算白平衡调整增益;倒数计算单元,其输出 白平衡调整增益,以及将白平衡调整的YUV信号乘以相互变换值的第二乘法器。

    Method for controlling nonvolatile memory device
    7.
    发明申请
    Method for controlling nonvolatile memory device 有权
    用于控制非易失性存储器件的方法

    公开(公告)号:US20070014155A1

    公开(公告)日:2007-01-18

    申请号:US11486295

    申请日:2006-07-14

    申请人: Akira Yoshino

    发明人: Akira Yoshino

    IPC分类号: G11C16/04 G11C11/34

    摘要: Data is written to a nonvolatile memory device having a memory region of four bits or larger in one memory cell sandwiched by a source and a drain with an improved accuracy. The nonvolatile memory device includes four control gates provided between a first and a second impurity-diffused regions that are provided separately from the semiconductor substrate, and a memory cell including memory regions that are counterpart of the control gates. A method for controlling the nonvolatile memory device includes classifying the four control gates into two groups of right and left sides, and then, applying a lower voltage to an impurity-diffused region that is further from a target memory region for injecting an electron and applying a higher voltage to an impurity-diffused region that is closer the target memory region, and applying a higher voltage, the higher voltage being higher than voltages applied to other control gates.

    摘要翻译: 在具有提高的精度的源极和漏极夹持的一个存储单元中,将数据写入具有四位或更大存储区的非易失性存储器件。 非易失性存储器件包括设置在与半导体衬底分离设置的第一和第二杂质扩散区域之间的四个控制栅极,以及包括与控制栅极对应的存储区域的存储单元。 用于控制非易失性存储器件的方法包括将四个控制栅极分成两组左右两侧,然后将较低的电压施加到远离用于注入电子的目标存储区域的杂质扩散区域并施加 对于更靠近目标存储区域的杂质扩散区域施加更高的电压,并且施加更高的电压,该较高的电压高于施加到其它控制栅极的电压。

    Nonvolatile semiconductor memory device, manufacturing method thereof, and operating method thereof
    8.
    发明授权
    Nonvolatile semiconductor memory device, manufacturing method thereof, and operating method thereof 有权
    非易失性半导体存储器件及其制造方法及其操作方法

    公开(公告)号:US06888194B2

    公开(公告)日:2005-05-03

    申请号:US10374840

    申请日:2003-02-26

    申请人: Akira Yoshino

    发明人: Akira Yoshino

    摘要: Nonvolatile memory elements are disclosed which can have increased capacity, reduced operating voltage and/or faster operating speeds. According to one embodiment, a nonvolatile memory element can include a first diffusion layer (2) and a second diffusion layer (3) formed in a main surface of a substrate (1). A laminate film can be formed near a first diffusion layer (2) and/or a second diffusion layers (3) that includes a first insulating film (4a or 4), a second insulating film (5a or 5), and a third insulating film (6a or 6). A gate insulating film (7) can be formed a channel region and gate electrode (8) can be formed to cover gate insulating film (7) and the laminate film(s) that has a T-shape. A gate electrode (8) can have end portions that sandwich a first insulating film (4a or 4), a second insulating film (5a or 5), and a third insulating film (6a or 6) with a first diffusion layer (2) and/or second diffusion layer (3).

    摘要翻译: 公开了可以具有增加的容量,降低的操作电压和/或更快的操作速度的非易失性存储器元件。 根据一个实施例,非易失性存储元件可以包括形成在基板(1)的主表面中的第一扩散层(2)和第二扩散层(3)。 可以在第一扩散层(2)和/或第二扩散层(3)附近形成层压膜,所述第二扩散层包括第一绝缘膜(4a或4),第二绝缘膜(5a或5) 第三绝缘膜(6a或6)。 栅极绝缘膜(7)可以形成沟道区,并且可以形成栅电极(8)以覆盖栅极绝缘膜(7)和具有T形的层压膜。 栅极(8)可以具有将第一绝缘膜(4a或4),第二绝缘膜(5a或5)和第三绝缘膜(6a或6)夹在第一扩散层 (2)和/或第二扩散层(3)。

    Electric insulated wire and cable using the same
    9.
    发明授权
    Electric insulated wire and cable using the same 失效
    电绝缘电线和电缆使用相同

    公开(公告)号:US5521009A

    公开(公告)日:1996-05-28

    申请号:US265018

    申请日:1994-06-24

    摘要: The present invention relates to an insulated wire comprising a conductor and at least two insulating layers provided on the outer periphery of the conductor. The inner insulating layer is provided directly or via another insulation on the outer periphery of the conductor and comprises a polyolefin compound containing 20 to 80 parts by weight of at least one substance selected from ethylene .alpha.-olefin copolymer, ethylene .alpha.-olefin polyene copolymer (.alpha.-olefin having the carbon numbers of C.sub.3 -C.sub.10, polyene being non-conjugated diene). The outer insulating layer is made primarily of a heat resistant resin which contains no halogen and which is a single substance or a blend of two or more substances selected from polyamide, polyphenylene sulfide, polybutylene terephthalate, polyethylene terephthalate, polyether ketone, polyether ether ketone, polyphenylene oxide, polycarbonate, polysulfone, polyether sulfon, polyether imide, polyarylate, polyamide, or a polymer alloy containing such resin as the main component.

    摘要翻译: 本发明涉及一种绝缘线,其包括导体和设置在导体的外周上的至少两个绝缘层。 内绝缘层直接或通过导体外周上的另一绝缘体设置,并且包含含有20至80重量份的至少一种选自乙烯-α-烯烃共聚物,乙烯α-烯烃多烯共聚物 碳数为C 3 -C 10的α-烯烃,多烯为非共轭二烯)。 外绝缘层主要由不含卤素的耐热树脂制成,它是选自聚酰胺,聚苯硫醚,聚对苯二甲酸丁二醇酯,聚对苯二甲酸乙二醇酯,聚醚酮,聚醚醚酮, 聚苯醚,聚碳酸酯,聚砜,聚醚磺酸,聚醚酰亚胺,聚芳酯,聚酰胺或以这种树脂为主要成分的聚合物合金。