公开(公告)号：US6069393A

公开(公告)日：2000-05-30

申请号：US468518

申请日：1995-06-06

申请人： Katsunori Hatanaka ,  Toshihiro Saika ,  Takayuki Ishii ,  Katsuhiko Yamada ,  Satoshi Itabashi ,  Kazuaki Tashiro ,  Tetsuya Shimada

发明人： Katsunori Hatanaka ,  Toshihiro Saika ,  Takayuki Ishii ,  Katsuhiko Yamada ,  Satoshi Itabashi ,  Kazuaki Tashiro ,  Tetsuya Shimada

IPC分类号： H01L27/146 ,  H01L31/112 ,  H01L31/0203 ,  H01L31/00

CPC分类号： H01L31/1126 ,  H01L27/14609 ,  H01L27/14665

摘要： An image sensor includes a photoelectric conversion unit, a charge storage unit, a switch unit, and a wiring unit, all of which are formed on a single substrate. A capacitor of the charge storage unit is formed at the same substrate position as that of a pattern of said wiring unit.

摘要翻译： 图像传感器包括形成在单个基板上的光电转换单元，电荷存储单元，开关单元和布线单元。 电荷存储单元的电容器形成在与所述布线单元的图案相同的基板位置处。

公开(公告)号：US4866291A

公开(公告)日：1989-09-12

申请号：US211031

申请日：1988-06-24

申请人： Tetsuya Shimada ,  Satoshi Itabashi ,  Katsunori Hatanaka

发明人： Tetsuya Shimada ,  Satoshi Itabashi ,  Katsunori Hatanaka

IPC分类号： H01L21/20 ,  H01L27/146 ,  H04N1/401

CPC分类号： H04N1/401 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/0262 ,  H01L21/02639 ,  H01L27/14665 ,  H01L27/14681 ,  Y10S148/014 ,  Y10S148/097 ,  Y10S148/152

摘要： An image photosensor includes a photosensor unit a charge storage unit, and a switch unit, all of which are formed on a single-crystal semiconductor film grown from a single nucleus such that crystal formation is performed on a substrate having a free surface including a non-nucleus formation surface and a nucleus formation surface adjacent thereto. The non-nucleus formation surface has a low nucleation density. The nucleus formation surface has a sufficiently small area to allow growth of only the single nucleus and has a higher nucleation density than that of the non-nucleus formation surface.

公开(公告)号：US4977096A

公开(公告)日：1990-12-11

申请号：US356882

申请日：1989-05-25

申请人： Tetsuya Shimada ,  Satoshi Itabashi ,  Katsunori Hatanaka

发明人： Tetsuya Shimada ,  Satoshi Itabashi ,  Katsunori Hatanaka

IPC分类号： H01L21/20 ,  H01L27/146 ,  H04N1/401

CPC分类号： H04N1/401 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/0262 ,  H01L21/02639 ,  H01L27/14665 ,  H01L27/14681 ,  Y10S148/014 ,  Y10S148/097 ,  Y10S148/152

摘要： An image photodetector includes a photosensor unit, a charge storage unit, and a switch unit, all of them are formed on a single-crystal semiconductor film grown from a single nucleus such that crystal formation is performed on a substrate having a free surface including a non-nucleus formation surface and a nucleus formation surface adjacent thereto. The non-nucleus formation surface has a low nucleation density. The nucleus formation surface has a sufficiently small area to allow growth of only the single nucleus and has a higher nucleation density that that of the non-nucleus formation surface.

公开(公告)号：US5335094A

公开(公告)日：1994-08-02

申请号：US26107

申请日：1993-03-01

申请人： Noriyuki Kaifu ,  Toshihiro Saika ,  Tadao Endo ,  Tetsuya Shimada

发明人： Noriyuki Kaifu ,  Toshihiro Saika ,  Tadao Endo ,  Tetsuya Shimada

IPC分类号： H04N1/028 ,  H04N1/193 ,  H04N5/335 ,  H04N5/378

CPC分类号： H04N1/1931 ,  H04N3/1581 ,  H04N5/335

摘要： To eliminate non-read time in a photoelectric converting device, a photoelectric converting section is provided in which a plurality of photoelectric conversion elements, switching elements, matrix signal wirings, and gate drive wirings are arranged on the same substrate such that the photoelectric converting section generates parallel signals. A drive switching section is provided for applying drive signals to the gate drive wirings. A read switching section is provided for converting the parallel signals which are transferred from the matrix signal wirings into a serial signal, and for outputting the serial signal. The read switching section comprises a plurality of transfer switches respectively connected to the matrix signal wirings. The transfer switches are preferably activated together, simultaneously. A plurality of read capacitors are also provided in the read switching section to store the charges transferred through the matrix signal wirings. The read switching section also includes a plurality of read switches for reading out carriers stored in the plurality of read capacitors. The read switching section also includes reading circuitry for reading the read switches by sequentially switching the read switches so that a period of driving the transfer switches and a period of driving a first one of the read switches are partially overlapped.

摘要翻译： 为了消除光电转换装置中的非读取时间，提供了一种光电转换部，其中多个光电转换元件，开关元件，矩阵信号布线和栅极驱动布线布置在同一基板上，使得光电转换部 产生并行信号。 提供驱动切换部分，用于将驱动信号施加到栅极驱动配线。 提供读取切换部分，用于将从矩阵信号布线传送的并行信号转换成串行信号，并输出串行信号。 读取切换部分包括分别连接到矩阵信号布线的多个传送开关。 转移开关优选同时一起激活。 在读取切换部分中还提供多个读取电容器，以存储通过矩阵信号布线传输的电荷。 读取切换部分还包括用于读出存储在多个读取电容器中的载波的多个读取开关。 读取切换部分还包括读取电路，用于通过顺序地切换读取开关来读取读取开关，使得驱动转换开关的周期和驱动第一个读取开关的周期部分重叠。

公开(公告)号：US5138467A

公开(公告)日：1992-08-11

申请号：US486211

申请日：1990-02-28

申请人： Toshihiro Saika ,  Noriyuki Kaifu ,  Tadao Endo ,  Isao Kobayashi ,  Tetsuya Shimada

发明人： Toshihiro Saika ,  Noriyuki Kaifu ,  Tadao Endo ,  Isao Kobayashi ,  Tetsuya Shimada

IPC分类号： H04N1/028 ,  H01L27/146

CPC分类号： H01L27/14665 ,  H04N3/1581

摘要： A photoelectric conversion device comprises a plurality of blocks each having a plurality of sensor elements each consisting of a combination of a photoelectric conversion section, a charge storage section connected to the photoelectric conversion section, and a switch section arranged in a path for reading a charge from said charge storage section. Gate lines for operating a plurality of switch sections in a given block are commonly connected. Read lines from said switch sections are commonly connected in units of sensor elements corresponding to each block to constitute a wiring matrix. The gate lines are arranged between the adjacent common read lines of the wiring matrix.

摘要翻译： 光电转换装置包括多个块，每个块具有多个传感器元件，每个传感器元件由光电转换部分，连接到光电转换部分的电荷存储部分和布置在用于读取电荷的路径中的开关部分组成 从所述电荷存储部分。 用于操作给定块中的多个开关部分的栅极线通常连接。 来自所述开关部分的读取线通常以对应于每个块的传感器元件为单位连接以构成布线矩阵。 栅极线布置在布线矩阵的相邻公共读取线之间。

公开(公告)号：US5061979A

公开(公告)日：1991-10-29

申请号：US482834

申请日：1990-02-21

申请人： Isao Kobayashi ,  Noriyuki Kaifu ,  Toshihiro Saika ,  Tadao Endo ,  Tetsuya Shimada

发明人： Isao Kobayashi ,  Noriyuki Kaifu ,  Toshihiro Saika ,  Tadao Endo ,  Tetsuya Shimada

IPC分类号： H01L27/146 ,  H04N1/193

CPC分类号： H04N1/1931 ,  H01L27/14665

摘要： A semiconductor device wherein m.times.n switch means connected to m.times.n functional elements for transferring signals by switching, and a matrix wiring section having wiring connected respectively to said m.times.n switching means are formed on a common substrate, and wherein said matrix wiring section comprises a lamination structure formed by stacking, at least, a first conductive layer, a first insulating layer, a second conductive layer, a second insulating layer, a semiconductor layer, and a third conductive layer in this order.

摘要翻译： 一种半导体器件，其中mxn开关装置连接到用于通过切换传送信号的功能元件，以及具有分别连接到所述mxn开关装置的布线的矩阵布线部分形成在公共基板上，并且其中所述矩阵布线部分包括形成的层叠结构 通过至少堆叠第一导电层，第一绝缘层，第二导电层，第二绝缘层，半导体层和第三导电层。

公开(公告)号：US5198685A

公开(公告)日：1993-03-30

申请号：US737323

申请日：1991-07-29

申请人： Masashi Kitani ,  Hisanori Tsuda ,  Katsunori Terada ,  Satoshi Itabashi ,  Tetsuya Shimada

发明人： Masashi Kitani ,  Hisanori Tsuda ,  Katsunori Terada ,  Satoshi Itabashi ,  Tetsuya Shimada

IPC分类号： H01L27/146 ,  H04N1/031

CPC分类号： H04N1/0316 ,  H01L27/14665 ,  H04N1/0313 ,  H01L27/14678

摘要： A photoelectric conversion apparatus having a thin plate glass wear-resisting layer is formed on photoelectric conversion devices, drive circuit and signal lines. An original document is disposed on the wear-resisting layer to confront the photoelectric conversion devices. Light is emitted from a light source disposed to confront the light transmissive substrate on the side opposing the original document, transmitted through a light transmissive substrate and applied to the original document. Reflected light from the original document is received by the photoelectric conversion devices so that electric signals transmitted from the photoelectric conversion devices can be read out through the signal lines. A protection layer is made of an inorganic thin film and formed on at least the photoelectric conversion devices, the drive circuit and the signal lines; a shock-absorbing layer made of an organic film is disposed at least between an end portion of the wear-resisting layer and the light transmissive substrate.

摘要翻译： 具有薄板玻璃耐磨层的光电转换装置形成在光电转换装置，驱动电路和信号线上。 原始文件设置在耐磨层上以面对光电转换装置。 光从被配置为面对与原稿相对的一侧的透光基板的光源发射，透射通过透光基板并施加到原始文件。 来自原始文档的反射光被光电转换装置接收，从而可以通过信号线读出从光电转换装置发送的电信号。 保护层由无机薄膜制成，至少形成在光电转换装置，驱动电路和信号线上; 至少在耐磨层的端部和透光性基板之间设置由有机膜构成的减震层。

公开(公告)号：US4935637A

公开(公告)日：1990-06-19

申请号：US393024

申请日：1989-08-10

申请人： Noriyuki Kaifu ,  Hiroo Ichihashi ,  Katsumi Komiyama ,  Masayoshi Murata ,  Satoshi Itabashi ,  Katsunori Terada ,  Hiromi Kodama ,  Hideyuki Suzuki ,  Kenji Morimoto ,  Tetsuya Shimada

发明人： Noriyuki Kaifu ,  Hiroo Ichihashi ,  Katsumi Komiyama ,  Masayoshi Murata ,  Satoshi Itabashi ,  Katsunori Terada ,  Hiromi Kodama ,  Hideyuki Suzuki ,  Kenji Morimoto ,  Tetsuya Shimada

IPC分类号： H01L27/146 ,  H01L21/60 ,  H01L23/528 ,  H01L27/144

CPC分类号： H01L27/1446 ,  H01L23/528 ,  H01L24/49 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2224/49 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01033

摘要： A linear element array with n functional elements disposed one-dimensionally is constructed of a linear element array section having N blocks each having m functional elements, and a wiring section having m electrical wirings disposed side by side; wherein each of the functional elements is connected to a corresponding one of the electrical wirings by means of wire bonding.

摘要翻译： 具有n维功能元件一维排列的线性元件阵列由具有N个块的线性元件阵列部分构成，每个块具有m个功能元件，并且具有并排设置的m个电线的布线部分; 其中每个功能元件通过引线接合连接到电气配线中的对应的一个。

公开(公告)号：US07498830B2

公开(公告)日：2009-03-03

申请号：US11195004

申请日：2005-08-01

申请人： Kazuhiro Nakamura ,  Tetsuya Shimada ,  Katsuhiko Watabe

发明人： Kazuhiro Nakamura ,  Tetsuya Shimada ,  Katsuhiko Watabe

IPC分类号： G01R31/28 ,  H05K7/20

CPC分类号： G05D23/1919 ,  H01L2924/0002 ,  H01L2924/00

摘要： The burn-in apparatus includes a water supply system and a sprayer and has a structure such that water is converted into mist and sprayed onto the upper surface of a device attached to a socket of a burn-in board. The amount of heat generated by the device that generates high heat is removed by the amount of heat that includes a large latent heat from when the mist falls on the upper surface and is evaporated. Burn-in of the device is conducted while it is being cooled to the target temperature.

摘要翻译： 该老化装置包括供水系统和喷雾器，并且具有将水转化成雾并喷洒在附着于老化板插座的装置的上表面上的结构。 产生高热量的装置产生的热量通过从雾落在上表面上而蒸发的包括大的潜热的热量除去。 在冷却到目标温度的同时进行设备的老化。

公开(公告)号：US07399693B2

公开(公告)日：2008-07-15

申请号：US10566170

申请日：2005-06-15

申请人： Yoshinobu Sekiguchi ,  Takao Yonehara ,  Makoto Koto ,  Masahiro Okuda ,  Tetsuya Shimada

发明人： Yoshinobu Sekiguchi ,  Takao Yonehara ,  Makoto Koto ,  Masahiro Okuda ,  Tetsuya Shimada

IPC分类号： H01L21/44

CPC分类号： H01L21/76251 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/02455 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02538 ,  H01L21/02546 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/0079 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/32341

摘要： This invention provides a semiconductor film manufacturing method using a new separation technique and applications thereof. The semiconductor film manufacturing method of this invention includes a separation layer forming a step of hetero-epitaxially growing a separation layer (2) on a seed substrate (1), a semiconductor film forming step of forming a semiconductor film (3) on the separation layer (2), and a separation step of separating, by using the separation layer (2), the semiconductor film (3) from a composite member (Ia) formed in the semiconductor film forming step.

摘要翻译： 本发明提供一种使用新的分离技术及其应用的半导体膜制造方法。 本发明的半导体膜制造方法包括形成在种子基板（1）上异质生长分离层（2）的步骤的分离层，在分离时形成半导体膜（3）的半导体膜形成步骤 层（2）和通过使用分离层（2）将半导体膜（3）从形成在半导体膜形成步骤中的复合构件（Ia）分离的分离步骤。