摘要:
Provided is a measuring apparatus that includes: a semiconductor laser device that emits a laser light beam to an object to be measured; a driving unit that provides a driving signal for modulation drive of the semiconductor laser device; a first detection unit that detects a first electrical signal that corresponds to the intensity of the laser light beam modulated due to the self-coupling effect, in a first half-cycle of the driving signal; a second detection unit that detects a second electrical signal that corresponds to the intensity of a second laser light beam modulated due to the self-coupling effect, in a second half-cycle of the driving signal being in an opposite phase of the first half-cycle; a calculation unit that calculates a difference between the first and second electrical signals; and a measuring unit that measures a change in the state of the object based on the calculated difference.
摘要:
Provided is a measuring apparatus including: a driving unit that outputs first and second driving signals each having an opposite phase; a first semiconductor laser device, driven by the first driving signal, that emits a first laser beam to an object to be measured; a second semiconductor laser device, disposed near the first device and driven by the second driving signal, that emits a second laser beam to the object; a first detection unit that detects a first electrical signal that corresponds to the intensity of the first laser beam modulated due to the self-coupling effect; a second detection unit that detects a second electrical signal that corresponds to the intensity of the second laser beam modulated due to the self-coupling effect; a calculation unit that calculates differences between the first and second electrical signals; and a measuring unit that measures a state change of the object from the difference.
摘要:
Provided is a measuring apparatus including: a driving unit that outputs first and second driving signals each having an opposite phase; a first semiconductor laser device, driven by the first driving signal, that emits a first laser beam to an object to be measured; a second semiconductor laser device, disposed near the first device and driven by the second driving signal, that emits a second laser beam to the object; a first detection unit that detects a first electrical signal that corresponds to the intensity of the first laser beam modulated due to the self-coupling effect; a second detection unit that detects a second electrical signal that corresponds to the intensity of the second laser beam modulated due to the self-coupling effect; a calculation unit that calculates differences between the first and second electrical signals; and a measuring unit that measures a state change of the object from the difference.
摘要:
A surface emitting semiconductor laser includes a laminate of semiconductor layers emitting multimode laser light, and a block member blocking light of a specific mode among the multimode laser light emitted from the laminate.
摘要:
A semiconductor laser apparatus includes a substrate, a vertical-cavity surface-emitting semiconductor laser diode (VCSEL) including a first and second mirror layers of a first and second conduction types, respectively, an active region between the first and second mirror layers, a first and second electrode layers electrically connected with the first and second mirror layers, respectively, and at least one Zener diode including a first and second semiconductor regions of a first and second conduction types, respectively, and a third and fourth electrode layers electrically connected with the first and second semiconductor regions, respectively. The second semiconductor region is formed in a portion of the first semiconductor region and forms a PN junction with the first semiconductor region. The VCSEL and the Zener diode are formed on the substrate. The first and second electrode layers are electrically connected with the fourth and third electrode layers, respectively.
摘要:
There is provided a semiconductor laser apparatus. An electrode of a semiconductor laser diode is bonded via a die attach and the electrode of the semiconductor laser diode includes Au and at least one of materials that compose the die attach except Au, in advance.
摘要:
A surface emitting semiconductor laser includes a laminate of semiconductor layers emitting multimode laser light, and a block member blocking light of a specific mode among the multimode laser light emitted from the laminate.
摘要:
In a small display system in which the area of each of a display device and a driving device is approximately reduced to the area of an image display part, the display device having the image display part and the driving device having a driving IC for driving the display device can be attached to or detached from each other. Display device-side electrode terminals connected to lines for driving individual display pixels of the display device are provided on the reverse surface of the display device opposite to the image display part. Driving device-side electrode terminals corresponding to the respective display device-side electrode terminals are provided on the display device connecting part of the driving device. When the display device is attached to the driving device, both the driving device-side electrode terminals and the display device-side electrode terminals are electrically connected so that an image can be displayed on the display device by the driving device.
摘要:
There is provided a semiconductor laser apparatus. An electrode of a semiconductor laser diode is bonded via a die attach and the electrode of the semiconductor laser diode includes Au and at least one of materials that compose the die attach except Au, in advance.
摘要:
A light-emitting module outputting laser beam emitted from a semiconductor light-emitting element via a lens, the light-emitting module includes a first main plane, a mount portion on the first main plane that mounts the semiconductor light-emitting element, a lens holding portion that holds the lens so that a light axis of the lens corresponds to a reference line crossed at right angles to the first main plane, a semiconductor light-receiving element that receives the laser beam reflected by the lens out of the laser beam emitted from the semiconductor light-emitting element. The semiconductor light-receiving element is positioned on the light axis of the lens and the semiconductor light-emitting element is provided away from the light axis of the lens.