公开(公告)号：US06743729B2

公开(公告)日：2004-06-01

申请号：US10076360

申请日：2002-02-19

申请人： Katsutoshi Izumi ,  Keiji Mine ,  Yoshiaki Ohbayashi ,  Fumihiko Jobe

发明人： Katsutoshi Izumi ,  Keiji Mine ,  Yoshiaki Ohbayashi ,  Fumihiko Jobe

IPC分类号： H01L21302

CPC分类号： H01L21/033 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  Y10S156/914

摘要： The present invention relates to etching for removing a carbon thin film formed on a surface of a sample, to prevent a damage on a sample and eliminate the necessity of providing a special device (such as vacuum pump) as is required in plasma etching. A sealed reaction chamber 100A in which a sample 500 formed with a carbon thin film 510 on its surface is to be set, a gas feed means 200A for feeding argon gas which is an inert gas Ar into which a predetermined proportion of oxygen gas O2 has been mixed from one end to the interior of the reaction chamber 100A, an exhaust means 300A for discharging carbon dioxide gas CO2 from the downstream side of the inert gas Ar fed from the gas feed means 200A, and a heating means 400A for heating the sample 500 to 550° C. or higher are provided.

摘要翻译： 本发明涉及用于去除在样品表面上形成的碳薄膜的蚀刻，以防止对样品的损伤，并且消除了如等离子体蚀刻所需要的特殊装置（例如真空泵）的必要性。 密封反应室100A，其中要设置表面上形成有碳薄膜510的样品500，用于供给作为惰性气体Ar的氩气的气体供给装置200A，其中预定比例的氧气O2具有 从反应室100A的一端到内部混合有从气体供给装置200A供给的惰性气体Ar的下游侧排出二氧化碳CO 2的排气装置300A，以及加热装置 提供500至550℃或更高。

公开(公告)号：US07084049B2

公开(公告)日：2006-08-01

申请号：US10351385

申请日：2003-01-27

申请人： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

发明人： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

IPC分类号： H01L21/20 ,  H01L21/36 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12

CPC分类号： H01L21/7624 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02656 ,  H01L21/0445 ,  H01L21/7602 ,  H01L21/76251

摘要： A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate 100, which has a surface silicon layer 130 of a predetermined thickness and a buried insulator 120, in a heating furnace 200 and of increasing the temperature of the atmosphere within heating furnace 200 while supplying a mixed gas (G1+G2) of a hydrogen gas G1 and of a hydrocarbon gas G2 into heating furnace 200, thereby, of metamorphosing surface silicon layer 130 of SOI substrate 100 into a single crystal silicon carbide thin film 140.

摘要翻译： 掩埋绝缘层型半导体碳化硅衬底的制造方法包括将具有预定厚度的表面硅层130和掩埋绝缘体120的SOI衬底100放置在加热炉200中的步骤， 同时向加热炉200供给氢气G 1和烃气G 2的混合气体（G 1 + G 2），从而将SOI衬底100的变形表面硅层130 成为单晶碳化硅薄膜140。

公开(公告)号：US20050148108A1

公开(公告)日：2005-07-07

申请号：US11055985

申请日：2005-02-14

申请人： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

发明人： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

IPC分类号： C30B29/38 ,  C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/00 ,  C30B1/00 ,  H01L29/24 ,  H01L33/00

CPC分类号： C30B25/02 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0254 ,  H01L21/02639

摘要： There is provided a monocrystalline gallium nitride localized substrate suitable for manufacturing electronic-optical united devices in which electronic devices and optical devices are mixedly mounted on the same silicon substrate. An area in which monocrystalline gallium nitride 410 is grown is locally present on a silicon substrate 100 by forming silicon carbide 200 on the silicon substrate 100 to locally form the monocrystalline gallium nitride 410 on the above-mentioned silicon carbide 200. Silicon nitride 220 is used as a mask in forming the above-mentioned monocrystalline gallium nitride 410.

摘要翻译： 提供了适用于制造电子器件和光学器件混合安装在同一硅衬底上的电子 - 光学联合器件的单晶氮化镓局部衬底。 单晶氮化镓410生长的区域通过在硅衬底100上形成碳化硅200而在硅衬底100上局部存在，以在上述碳化硅200上局部形成单晶氮化镓410。 在形成上述单晶氮化镓410时，使用氮化硅220作为掩模。

公开(公告)号：US07077875B2

公开(公告)日：2006-07-18

申请号：US11050683

申请日：2005-02-07

申请人： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

发明人： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

IPC分类号： H01L21/00 ,  H01L21/64

CPC分类号： H01L21/7624 ,  C23C16/0218 ,  C23C16/0236 ,  C23C16/325 ,  C23C16/482 ,  C30B1/10 ,  C30B29/36 ,  H01L21/02381 ,  H01L21/02491 ,  H01L21/02529 ,  H01L21/02614 ,  H01L21/0445 ,  H01L21/2007 ,  H01L21/7602 ,  Y10T29/41

摘要： Provided is a manufacturing method of a buried insulating layer type semiconductor silicon carbide substrate excellent in flatness of an interfaces in contact the insulating layer and a manufacturing device thereof. In the manufacturing device, an SOI substrate having a buried insulating layer positioned on a silicon substrate and a surface silicon layer formed on this buried insulating layer is placed in this film formation chamber. The manufacturing device includes: the film formation chamber in which the SOI substrate is placed; a gas supplying unit for supplying various types of gasses required for the manufacturing of a buried insulating layer type semiconductor silicon carbide substrate into the film formation chamber; an infrared ray irradiating unit for irradiating the surface silicon layer of the SOI substrate with infrared rays; and a control part for controlling the gas supplying unit and the infrared ray irradiating unit.

摘要翻译： 提供一种绝缘层与其制造装置接触的界面的平坦度优异的掩埋绝缘层型半导体碳化硅基板的制造方法。 在制造装置中，在该成膜室中配置具有位于硅衬底上的埋入绝缘层和形成在该埋置绝缘层上的表面硅层的SOI衬底。 制造装置包括：成膜室，其中放置SOI基板; 气体供给单元，用于将掩模绝缘层型半导体碳化硅基板的制造所需的各种气体供给到成膜室中; 红外线照射单元，其用红外线照射SOI衬底的表面硅层; 以及用于控制气体供给单元和红外线照射单元的控制部。

公开(公告)号：US06927144B2

公开(公告)日：2005-08-09

申请号：US10708593

申请日：2004-03-12

申请人： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

发明人： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

IPC分类号： C30B29/36 ,  H01L21/02 ,  H01L21/04 ,  H01L21/20 ,  H01L21/205 ,  H01L21/76 ,  H01L21/762 ,  H01L27/12

CPC分类号： H01L21/7624 ,  C23C16/0218 ,  C23C16/0236 ,  C23C16/325 ,  C23C16/482 ,  C30B1/10 ,  C30B29/36 ,  H01L21/02381 ,  H01L21/02491 ,  H01L21/02529 ,  H01L21/02614 ,  H01L21/0445 ,  H01L21/2007 ,  H01L21/7602 ,  Y10T29/41

摘要： Provided is a manufacturing method of a buried insulating layer type semiconductor silicon carbide substrate excellent in flatness of an interfaces in contact the insulating layer and a manufacturing device thereof. In the manufacturing device, an SOI substrate having a buried insulating layer positioned on a silicon substrate and a surface silicon layer formed on this buried insulating layer is placed in this film formation chamber. The manufacturing device includes: the film formation chamber in which the SOI substrate is placed; a gas supplying unit for supplying various types of gasses required for the manufacturing of a buried insulating layer type semiconductor silicon carbide substrate into the film formation chamber; an infrared ray irradiating unit for irradiating the surface silicon layer of the SOI substrate with infrared rays; and a control part for controlling the gas supplying unit and the infrared ray irradiating unit.

摘要翻译： 提供一种绝缘层与其制造装置接触的界面的平坦度优异的掩埋绝缘层型半导体碳化硅基板的制造方法。 在制造装置中，在该成膜室中配置具有位于硅衬底上的埋入绝缘层和形成在该埋置绝缘层上的表面硅层的SOI衬底。 制造装置包括：成膜室，其中放置SOI基板; 气体供给单元，用于将掩模绝缘层型半导体碳化硅基板的制造所需的各种气体供给到成膜室中; 红外线照射单元，其用红外线照射SOI衬底的表面硅层; 以及用于控制气体供给单元和红外线照射单元的控制部。

公开(公告)号：US06773508B2

公开(公告)日：2004-08-10

申请号：US10159111

申请日：2002-06-03

申请人： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Fumihiko Jobe

发明人： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Fumihiko Jobe

IPC分类号： C30B2504

CPC分类号： C30B25/02 ,  C30B29/36

摘要： To economically and easily fabricate a single crystal silicon carbide thin film. The apparatus for fabricating a single crystal silicon carbide thin film comprises a film-formation chamber 200 adapted to receive a SOI substrate 100 for film-formation, a gas supply means 300 for supplying various gases G1 to G4 necessary to fabricate a single crystal silicon carbide thin film to the film-formation chamber 200, a gas treatment means 500 for treating argon gas as an inert gas G1, propane gas as a hydrocarbon-based gas G2, hydrogen gas as a carrier gas, and oxygen gas G4 supplied to the film-formation chamber 200, and a temperature control means 400 for controlling the temperature of the film-formation chamber 200.

摘要翻译： 经济地制造单晶碳化硅薄膜。 用于制造单晶碳化硅薄膜的装置包括适于接收用于成膜的SOI衬底100的成膜室200，用于供应制造单晶碳化硅所需的各种气体G1至G4的气体供给装置300 薄膜形成室200，用于处理氩气作为惰性气体G1的气体处理装置500，作为烃类气体G2的丙烷气体，作为载气的氢气和供给到膜的氧气G4 以及用于控制成膜室200的温度的温度控制装置400。

公开(公告)号：US07393763B2

公开(公告)日：2008-07-01

申请号：US11055985

申请日：2005-02-14

申请人： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

发明人： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

IPC分类号： H01L21/36

CPC分类号： C30B25/02 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0254 ,  H01L21/02639

摘要： There is provided a monocrystalline gallium nitride localized substrate suitable for manufacturing electronic-optical united devices in which electronic devices and optical devices are mixedly mounted on the same silicon substrate.An area in which monocrystalline gallium nitride 410 is grown is locally present on a silicon substrate 100 by forming silicon carbide 200 on the silicon substrate 100 to locally form the monocrystalline gallium nitride 410 on the above-mentioned silicon carbide 200. Silicon nitride 220 is used as a mask in forming the above-mentioned monocrystalline gallium nitride 410.

摘要翻译： 提供了适用于制造电子器件和光学器件混合安装在同一硅衬底上的电子 - 光学联合器件的单晶氮化镓局部衬底。 单晶氮化镓410生长的区域通过在硅衬底100上形成碳化硅200而在硅衬底100上局部存在，以在上述碳化硅200上局部形成单晶氮化镓410。 在形成上述单晶氮化镓410时，使用氮化硅220作为掩模。

公开(公告)号：US07128788B2

公开(公告)日：2006-10-31

申请号：US10802806

申请日：2004-03-18

申请人： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

发明人： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

IPC分类号： C23C16/00 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L21/7624 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02656 ,  H01L21/0445 ,  H01L21/7602 ,  H01L21/76251

摘要： A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate 100, which has a surface silicon layer 130 of a predetermined thickness and a buried insulator 120, in a heating furnace 200 and of increasing the temperature of the atmosphere within heating furnace 200 while supplying a mixed gas (G1+G2) of a hydrogen gas G1 and of a hydrocarbon gas G2 into heating furnace 200, thereby, of metamorphosing surface silicon layer 130 of SOI substrate 100 into a single crystal silicon carbide thin film 140.

摘要翻译： 掩埋绝缘层型半导体碳化硅衬底的制造方法包括将具有预定厚度的表面硅层130和掩埋绝缘体120的SOI衬底100放置在加热炉200中的步骤， 同时向加热炉200供给氢气G 1和烃气G 2的混合气体（G 1 + G 2），从而将SOI衬底100的变形表面硅层130 成为单晶碳化硅薄膜140。

公开(公告)号：US20050136611A1

公开(公告)日：2005-06-23

申请号：US11050683

申请日：2005-02-07

申请人： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

发明人： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

IPC分类号： C30B29/36 ,  H01L21/02 ,  H01L21/04 ,  H01L21/20 ,  H01L21/205 ,  H01L21/76 ,  H01L21/762 ,  H01L27/12 ,  H01L21/30

CPC分类号： H01L21/7624 ,  C23C16/0218 ,  C23C16/0236 ,  C23C16/325 ,  C23C16/482 ,  C30B1/10 ,  C30B29/36 ,  H01L21/02381 ,  H01L21/02491 ,  H01L21/02529 ,  H01L21/02614 ,  H01L21/0445 ,  H01L21/2007 ,  H01L21/7602 ,  Y10T29/41

摘要： Provided is a manufacturing method of a buried insulating layer type semiconductor silicon carbide substrate excellent in flatness of an interfaces in contact the insulating layer and a manufacturing device thereof. In the manufacturing device, an SOI substrate having a buried insulating layer positioned on a silicon substrate and a surface silicon layer formed on this buried insulating layer is placed in this film formation chamber. The manufacturing device includes: the film formation chamber in which the SOI substrate is placed; a gas supplying unit for supplying various types of gasses required for the manufacturing of a buried insulating layer type semiconductor silicon carbide substrate into the film formation chamber; an infrared ray irradiating unit for irradiating the surface silicon layer of the SOI substrate with infrared rays; and a control part for controlling the gas supplying unit and the infrared ray irradiating unit.

摘要翻译： 提供一种绝缘层与其制造装置接触的界面的平坦度优异的掩埋绝缘层型半导体碳化硅基板的制造方法。 在制造装置中，在该成膜室中配置具有位于硅衬底上的埋入绝缘层和形成在该埋置绝缘层上的表面硅层的SOI衬底。 制造装置包括：成膜室，其中放置SOI基板; 气体供给单元，用于将掩模绝缘层型半导体碳化硅基板的制造所需的各种气体供给到成膜室中; 红外线照射单元，其用红外线照射SOI衬底的表面硅层; 以及用于控制气体供给单元和红外线照射单元的控制部。