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    Double patterning process
    1.
    发明授权
    Double patterning process 有权
    双重图案化工艺

    公开(公告)号：US08129099B2

    公开(公告)日：2012-03-06

    申请号：US12370901

    申请日：2009-02-13

    申请人： Katsuya Takemura ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Kazuhiro Katayama ,  Toshinobu Ishihara

    发明人： Katsuya Takemura ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Kazuhiro Katayama ,  Toshinobu Ishihara

    IPC分类号： G03F7/24 ,  G03F7/40 ,  G03F7/039 ,  G03F7/075

    CPC分类号： H01L21/0337 ,  G03F7/0035 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/0757 ,  G03F7/11 ,  G03F7/40 ,  H01L21/0338

    摘要： Double patterns are formed by coating a first chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a first positive resist pattern, treating the first resist pattern to be alkali soluble and solvent resistant, coating a second resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a second positive resist pattern. The last development step includes dissolving away the reversed first resist pattern and achieving reversal transfer.

    摘要翻译： 通过涂布第一化学放大的正型抗蚀剂组合物形成双重图案，该组合物包含含酸不稳定基团的树脂和光酸产生剂，并且预烘烤以在可加工的基材上形成抗蚀剂膜，将抗蚀剂膜暴露于高能辐射，PEB和 用碱性显影剂显影以形成第一正性抗蚀剂图案，将第一抗蚀剂图案处理为碱溶性和耐溶剂性，涂覆第二抗蚀剂组合物和预烘烤以形成反转膜，并将反转膜暴露于高能量辐射， PEB，并用碱性显影剂显影以形成第二正性抗蚀剂图案。 最后的发展步骤包括将反转的第一抗蚀剂图案溶解并实现反转印。

    Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation
    3.
    发明授权
    Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation 失效
    聚合化合物，化学放大正型抗蚀剂材料和图案形成工艺

    公开(公告)号：US6048661A

    公开(公告)日：2000-04-11

    申请号：US33147

    申请日：1998-03-02

    申请人： Tsunehiro Nishi ,  Jun Hatakeyama ,  Shigehiro Nagura ,  Toshinobu Ishihara

    发明人： Tsunehiro Nishi ,  Jun Hatakeyama ,  Shigehiro Nagura ,  Toshinobu Ishihara

    IPC分类号： G03F7/004 ,  G03F7/039

    CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/111

    摘要： Provided are polymeric compounds which, when used as base resins in resist materials, can yield chemical resist materials having high sensitivity, high resolution, a high exposure latitude, and good process adaptability, exhibiting excellent resistance to plasma etching, and giving resist patterns having high thermal resistance, as well as chemically amplified positive type resist materials using such polymeric compounds as base resins. These chemically amplified positive type resist materials use a base resin comprising a polymeric compound having a weight-average molecular weight of 1,000 to 500,000 and having one or more hydroxyl and/or carboxyl groups in the molecule, part or all of the hydrogen atoms of the hydroxyl and/or carboxyl groups being replaced by groups of the following general formula ##STR1## and additionally contain an acid generator, a dissolution inhibitor, a basic compound, and an aromatic compound having a group of the formula .tbd.C--COOH.

    摘要翻译： 提供了当作为抗蚀剂材料中的基础树脂使用时，可以产生具有高灵敏度，高分辨率，高曝光宽容度和良好的工艺适应性的化学抗蚀剂材料，表现出优异的等离子体蚀刻性，并且具有高抗蚀剂图案的抗蚀剂图案 耐热性以及使用这种聚合物作为基础树脂的化学放大正型抗蚀剂材料。 这些化学放大正型抗蚀剂材料使用包含重均分子量为1,000至500,000并且在分子中具有一个或多个羟基和/或羧基的聚合化合物的基础树脂，部分或全部氢原子 羟基和/或羧基被下列通式的基团取代，另外含有酸产生剂，溶解抑制剂，碱性化合物和具有式3BOND C-COOH基团的芳族化合物。

    Double patterning process
    4.
    发明授权
    Double patterning process 有权
    双重图案化工艺

    公开(公告)号：US08247166B2

    公开(公告)日：2012-08-21

    申请号：US12549792

    申请日：2009-08-28

    申请人： Katsuya Takemura ,  Tsunehiro Nishi ,  Jun Hatakeyama ,  Masaki Ohashi ,  Takeshi Kinsho

    发明人： Katsuya Takemura ,  Tsunehiro Nishi ,  Jun Hatakeyama ,  Masaki Ohashi ,  Takeshi Kinsho

    IPC分类号： G03F7/26

    CPC分类号： G03F7/40 ,  G03F7/0035 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/322

    摘要： A double pattern is formed by coating a first positive resist composition onto a substrate, patternwise exposure to radiation, and development with alkaline developer to form a first resist pattern; applying heat and/or radiation to render the first resist pattern insoluble in a second solvent and in a second developer; coating a second resist composition on the first resist pattern, patternwise exposure to radiation, and development with second developer to form a second resist pattern. The resin in the first resist composition comprises recurring units of formula (1) wherein R1 is H, CH3 or CF3, m=1 or 2, n=0 or 1.

    摘要翻译： 通过将第一正性抗蚀剂组合物涂布在基材上，图案地暴露于辐射并用碱性显影剂显影以形成第一抗蚀剂图案形成双重图案; 施加热和/或辐射以使第一抗蚀剂图案不溶于第二溶剂和第二显影剂; 在第一抗蚀剂图案上涂覆第二抗蚀剂组合物，图案地暴露于辐射，并用第二显影剂显影以形成第二抗蚀剂图案。 第一抗蚀剂组合物中的树脂包含式（1）的重复单元，其中R 1是H，CH 3或CF 3，m = 1或2，n = 0或1。

    DOUBLE PATTERNING PROCESS
    5.
    发明申请
    DOUBLE PATTERNING PROCESS 有权
    双重图案处理

    公开(公告)号：US20100062380A1

    公开(公告)日：2010-03-11

    申请号：US12549792

    申请日：2009-08-28

    申请人： Katsuya Takemura ,  Tsunehiro Nishi ,  Jun Hatakeyama ,  Masaki Ohashi ,  Takeshi Kinsho

    发明人： Katsuya Takemura ,  Tsunehiro Nishi ,  Jun Hatakeyama ,  Masaki Ohashi ,  Takeshi Kinsho

    IPC分类号： G03F7/20

    CPC分类号： G03F7/40 ,  G03F7/0035 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/322

    摘要： A double pattern is formed by coating a first positive resist composition onto a substrate, patternwise exposure to radiation, and development with alkaline developer to form a first resist pattern; applying heat and/or radiation to render the first resist pattern insoluble in a second solvent and in a second developer; coating a second resist composition on the first resist pattern, patternwise exposure to radiation, and development with second developer to form a second resist pattern. The resin in the first resist composition comprises recurring units of formula (1) wherein R1 is H, CH3 or CF3, m=1 or 2, n=0 or 1.

    摘要翻译： 通过将第一正性抗蚀剂组合物涂布在基材上，图案地暴露于辐射并用碱性显影剂显影以形成第一抗蚀剂图案形成双重图案; 施加热和/或辐射以使第一抗蚀剂图案不溶于第二溶剂和第二显影剂; 在第一抗蚀剂图案上涂覆第二抗蚀剂组合物，图案地暴露于辐射，并用第二显影剂显影以形成第二抗蚀剂图案。 第一抗蚀剂组合物中的树脂包含式（1）的重复单元，其中R 1是H，CH 3或CF 3，m = 1或2，n = 0或1。

    Resist-modifying composition and pattern forming process
    6.
    发明授权
    Resist-modifying composition and pattern forming process 有权
    抗蚀剂改性组合物和图案形成工艺

    公开(公告)号：US08426105B2

    公开(公告)日：2013-04-23

    申请号：US12786759

    申请日：2010-05-25

    申请人： Takeru Watanabe ,  Masashi Iio ,  Kazuhiro Katayama ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Takeshi Kinsho

    发明人： Takeru Watanabe ,  Masashi Iio ,  Kazuhiro Katayama ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Takeshi Kinsho

    IPC分类号： G03F7/004

    CPC分类号： G03F7/0397 ,  G03F7/0035 ,  G03F7/0046 ,  G03F7/2041 ,  G03F7/40

    摘要： A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist-modifying composition comprises a carbamate compound and a solvent.

    摘要翻译： 图案化工艺包括（1）将第一正性抗蚀剂组合物涂覆在基材上，烘烤，曝光，曝光后烘烤和碱显影以形成第一抗蚀剂图案，（2）将抗蚀剂改性组合物涂覆到第一抗蚀剂图案上 加热进行改性处理，（3）涂布第二正性抗蚀剂组合物，烘烤，曝光，曝光后烘烤和碱显影以形成第二抗蚀剂图案。 抗蚀剂改性组合物包含氨基甲酸酯化合物和溶剂。

    Resist-modifying composition and pattern forming process
    8.
    发明授权
    Resist-modifying composition and pattern forming process 有权
    抗蚀剂改性组合物和图案形成工艺

    公开(公告)号：US08329384B2

    公开(公告)日：2012-12-11

    申请号：US12785930

    申请日：2010-05-24

    申请人： Takeru Watanabe ,  Kazuhiro Katayama ,  Masashi Iio ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Takeshi Kinsho

    发明人： Takeru Watanabe ,  Kazuhiro Katayama ,  Masashi Iio ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Takeshi Kinsho

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/40

    CPC分类号： G03F7/0035 ,  G03F7/40 ,  H01L21/0273

    摘要： A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist modifying composition comprises a base resin comprising recurring units having formula (1) wherein A1 is alkylene, R1 is H or methyl, R2 is alkyl or bond together to form a nitrogen-containing heterocycle, and an alcohol-based solvent.

    摘要翻译： 图案化工艺包括（1）将第一正性抗蚀剂组合物涂覆在基材上，烘烤，曝光，曝光后烘烤和碱显影以形成第一抗蚀剂图案，（2）将抗蚀剂改性组合物涂覆到第一抗蚀剂图案上 加热进行改性处理，（3）涂布第二正性抗蚀剂组合物，烘烤，曝光，曝光后烘烤和碱显影以形成第二抗蚀剂图案。 抗蚀剂改性组合物包括含有式（1）的重复单元的基础树脂，其中A1是亚烷基，R1是H或甲基，R2是烷基或键合在一起形成含氮杂环和醇类溶剂。

    RESIST-MODIFYING COMPOSITION AND PATTERN FORMING PROCESS
    9.
    发明申请
    RESIST-MODIFYING COMPOSITION AND PATTERN FORMING PROCESS 有权
    电阻修饰组合物和图案形成工艺

    公开(公告)号：US20100297563A1

    公开(公告)日：2010-11-25

    申请号：US12785930

    申请日：2010-05-24

    申请人： Takeru Watanabe ,  Kazuhiro Katayama ,  Masashi Iio ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Takeshi Kinsho

    发明人： Takeru Watanabe ,  Kazuhiro Katayama ,  Masashi Iio ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Takeshi Kinsho

    IPC分类号： G03F7/20

    CPC分类号： G03F7/0035 ,  G03F7/40 ,  H01L21/0273

    摘要： A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist modifying composition comprises a base resin comprising recurring units having formula (1) wherein A1 is alkylene, R1 is H or methyl, R2 is alkyl or bond together to form a nitrogen-containing heterocycle, and an alcohol-based solvent.

    摘要翻译： 图案化工艺包括（1）将第一正性抗蚀剂组合物涂覆在基材上，烘烤，曝光，曝光后烘烤和碱显影以形成第一抗蚀剂图案，（2）将抗蚀剂改性组合物涂覆到第一抗蚀剂图案上 加热进行改性处理，（3）涂布第二正性抗蚀剂组合物，烘烤，曝光，曝光后烘烤和碱显影以形成第二抗蚀剂图案。 抗蚀剂改性组合物包括含有式（1）的重复单元的基础树脂，其中A1是亚烷基，R1是H或甲基，R2是烷基或键合在一起形成含氮杂环，和醇类溶剂。