公开(公告)号：US20100118636A1

公开(公告)日：2010-05-13

申请号：US12688254

申请日：2010-01-15

申请人： Kaushik Chanda ,  Lynne M. Gignac ,  Wai-Kin Li ,  Ping-Chuan Wang

发明人： Kaushik Chanda ,  Lynne M. Gignac ,  Wai-Kin Li ,  Ping-Chuan Wang

IPC分类号： G11C17/16 ,  H01L23/525 ,  H01L21/44

CPC分类号： G11C17/16 ,  H01L21/7682 ,  H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electrically reprogrammable fuse comprising an interconnect disposed in a dielectric material, a sensing wire disposed at a first end of the interconnect, a first programming wire disposed at a second end of the interconnect, and a second programming wire disposed at a second end of the interconnect, wherein the fuse is operative to form a surface void at the interface between the interconnect and the sensing wire when a first directional electron current is applied from the first programming wire through the interconnect to the second programming wire, and wherein, the fuse is further operative to heal the surface void between the interconnect and the sensing wire when a second directional electron current is applied from the second programming wire through the interconnect to the first programming wire.

摘要翻译： 一种电可重新编程的保险丝，其包括设置在电介质材料中的互连，布置在所述互连的第一端的感测线，布置在所述互连的第二端的第一编程线，以及设置在所述互连的第二端的第二编程线 其中当从所述第一编程线通过所述互连件施加第一定向电子线到所述第二编程线时，所述保险丝可操作以在所述互连和感测线之间的界面处形成表面空隙，并且其中，所述保险丝是 当从所述第二编程线通过所述互连件施加第二编程线到所述第一编程线时，还可操作以治愈所述互连和所述感测线之间的表面空隙。

公开(公告)号：US08535991B2

公开(公告)日：2013-09-17

申请号：US12688254

申请日：2010-01-15

申请人： Kaushik Chanda ,  Lynne M. Gignac ,  Wai-Kin Li ,  Ping-Chuan Wang

发明人： Kaushik Chanda ,  Lynne M. Gignac ,  Wai-Kin Li ,  Ping-Chuan Wang

IPC分类号： H01L21/82

CPC分类号： G11C17/16 ,  H01L21/7682 ,  H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electrically reprogrammable fuse comprising an interconnect disposed in a dielectric material, a sensing wire disposed at a first end of the interconnect, a first programming wire disposed at a second end of the interconnect, and a second programming wire disposed at a second end of the interconnect, wherein the fuse is operative to form a surface void at the interface between the interconnect and the sensing wire when a first directional electron current is applied from the first programming wire through the interconnect to the second programming wire, and wherein, the fuse is further operative to heal the surface void between the interconnect and the sensing wire when a second directional electron current is applied from the second programming wire through the interconnect to the first programming wire.

摘要翻译： 一种电可重新编程的保险丝，其包括设置在电介质材料中的互连，布置在所述互连的第一端的感测线，布置在所述互连的第二端的第一编程线，以及设置在所述互连的第二端的第二编程线 其中当从所述第一编程线通过所述互连件施加第一定向电子线到所述第二编程线时，所述保险丝可操作以在所述互连和感测线之间的界面处形成表面空隙，并且其中，所述保险丝是 当从所述第二编程线通过所述互连件施加第二编程线到所述第一编程线时，还可操作以治愈所述互连和所述感测线之间的表面空隙。

公开(公告)号：US20090045484A1

公开(公告)日：2009-02-19

申请号：US11839716

申请日：2007-08-16

申请人： Kaushik Chanda ,  Lynne M. Gignac ,  Wai-Kin Li ,  Ping-Chuan Wang

发明人： Kaushik Chanda ,  Lynne M. Gignac ,  Wai-Kin Li ,  Ping-Chuan Wang

IPC分类号： H01L23/52 ,  H01H37/76 ,  H01L23/525 ,  H01L21/44 ,  H01L29/00

CPC分类号： G11C17/16 ,  H01L21/7682 ,  H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electrically reprogrammable fuse comprising an interconnect disposed in a dielectric material, a sensing wire disposed at a first end of the interconnect, a first programming wire disposed at a second end of the interconnect, and a second programming wire disposed at a second end of the interconnect, wherein the fuse is operative to form a surface void at the interface between the interconnect and the sensing wire when a first directional electron current is applied from the first programming wire through the interconnect to the second programming wire, and wherein, the fuse is further operative to heal the surface void between the interconnect and the sensing wire when a second directional electron current is applied from the second programming wire through the interconnect to the first programming wire.

摘要翻译： 一种电可重新编程的保险丝，其包括设置在电介质材料中的互连，布置在所述互连的第一端的感测线，布置在所述互连的第二端的第一编程线，以及设置在所述互连的第二端的第二编程线 其中当从所述第一编程线通过所述互连件施加第一定向电子线到所述第二编程线时，所述保险丝可操作以在所述互连和感测线之间的界面处形成表面空隙，并且其中，所述保险丝是 当从所述第二编程线通过所述互连件施加第二编程线到所述第一编程线时，还可操作以治愈所述互连和所述感测线之间的表面空隙。

公开(公告)号：US08912658B2

公开(公告)日：2014-12-16

申请号：US12915510

申请日：2010-10-29

申请人： Ronald Filippi ,  Ping-Chuan Wang ,  Griselda Bonilla ,  Kaushik Chanda ,  Robert D. Edwards ,  Andrew H. Simon

发明人： Ronald Filippi ,  Ping-Chuan Wang ,  Griselda Bonilla ,  Kaushik Chanda ,  Robert D. Edwards ,  Andrew H. Simon

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/532 ,  H01L21/768

CPC分类号： H01L21/76834 ,  H01L21/76819 ,  H01L21/76829 ,  H01L21/76849 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

摘要： An improved interconnect structure including a dielectric layer having a conductive feature embedded therein, the conductive feature having a first top surface that is substantially coplanar with a second top surface of the dielectric layer; a metal cap layer located directly on the first top surface, wherein the metal cap layer does not substantially extend onto the second top surface; a first dielectric cap layer located directly on the second top surface, wherein the first dielectric cap layer does not substantially extend onto the first top surface and the first dielectric cap layer is thicker than the metal cap layer; and a second dielectric cap layer on the metal cap layer and the first dielectric cap layer. A method of forming the interconnect structure is also provided.

摘要翻译： 一种改进的互连结构，其包括具有嵌入其中的导电特征的介电层，所述导电特征具有与介电层的第二顶表面基本共面的第一顶表面; 金属盖层直接位于第一顶表面上，其中金属盖层基本上不延伸到第二顶表面上; 位于所述第二顶表面上的第一电介质盖层，其中所述第一电介质盖层基本上不延伸到所述第一顶表面上，并且所述第一电介质盖层比所述金属盖层厚; 以及金属盖层和第一电介质盖层上的第二电介质盖层。 还提供了形成互连结构的方法。

公开(公告)号：US20070158851A1

公开(公告)日：2007-07-12

申请号：US11306825

申请日：2006-01-12

申请人： Kaushik Chanda ,  James Demarest ,  Ronald Filippi ,  Roy Iggulden ,  Edward Kiewra ,  Vincent McGahay ,  Ping-Chuan Wang ,  Yun-Yu Wang

发明人： Kaushik Chanda ,  James Demarest ,  Ronald Filippi ,  Roy Iggulden ,  Edward Kiewra ,  Vincent McGahay ,  Ping-Chuan Wang ,  Yun-Yu Wang

IPC分类号： H01L21/4763 ,  H01L23/48

CPC分类号： H01L23/53238 ,  H01L21/76846 ,  H01L23/5283 ,  H01L2924/0002 ,  H01L2924/00

摘要： In the back end of an integrated circuit employing dual-damascene interconnects, the interconnect members have a first non-conformal liner that has a thicker portion at the top of the trench level of the interconnect; and a conformal second liner that combines with the first liner to block diffusion of the metal fill material.

摘要翻译： 在采用双镶嵌互连的集成电路的后端中，互连构件具有第一非保形衬套，其在互连的沟槽级的顶部具有较厚的部分; 以及与第一衬垫结合以阻挡金属填充材料的扩散的共形第二衬垫。

公开(公告)号：US08378447B2

公开(公告)日：2013-02-19

申请号：US13085632

申请日：2011-04-13

申请人： Kaushik Chanda ,  Ronald G. Filippi ,  Joseph M. Lukaitis ,  Ping-Chuan Wang

发明人： Kaushik Chanda ,  Ronald G. Filippi ,  Joseph M. Lukaitis ,  Ping-Chuan Wang

IPC分类号： H01L23/52

CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electrically programmable fuse includes an anode, a cathode, and a fuse link conductively connecting the cathode with the anode, which is programmable by applying a programming current. The anode and the fuse link each include a polysilicon layer and a silicide layer formed on the polysilicon layer, and the cathode includes the polysilicon layer and a partial silicide layer formed on a predetermined portion of the polysilicon layer of the cathode located adjacent to a cathode junction where the cathode and the fuse link meet.

摘要翻译： 电可编程保险丝包括阳极，阴极和导电地连接阴极与阳极的熔断体，其可通过施加编程电流来编程。 阳极和熔丝链路各自包括形成在多晶硅层上的多晶硅层和硅化物层，并且阴极包括多晶硅层和形成在阴极的多晶硅层的预定部分上的部分硅化物层，其位于阴极附近 阴极和熔断体连接处的连接处。

公开(公告)号：US20120249159A1

公开(公告)日：2012-10-04

申请号：US13074407

申请日：2011-03-29

申请人： Ronald G. Filippi ,  Griselda Bonilla ,  Kaushik Chanda ,  Stephan Grunow ,  Naftali E. Lustig ,  Andrew H. Simon ,  Ping-Chuan Wang

发明人： Ronald G. Filippi ,  Griselda Bonilla ,  Kaushik Chanda ,  Stephan Grunow ,  Naftali E. Lustig ,  Andrew H. Simon ,  Ping-Chuan Wang

IPC分类号： G01R31/04 ,  G01R31/02 ,  H01L23/62

CPC分类号： H01L23/5226 ,  G01R31/025 ,  G01R31/04 ,  G01R31/07 ,  G01R31/327 ,  H01L23/5256 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53295 ,  H01L23/58 ,  H01L2924/0002 ,  H01L2924/00

摘要： A back end of the line (BEOL) fuse structure having a stack of vias. The stacking of vias leads to high aspect ratios making liner and seed coverage inside the vias poorer. The weakness of the liner and seed layers leads to a higher probability of electromigration (EM) failure. The fuse structure addresses failures due to poor liner and seed coverage. Design features permit determining where failures occur, determining the extent of the damaged region after fuse programming and preventing further propagation of the damaged dielectric region.

摘要翻译： 线路的后端（BEOL）保险丝结构具有一叠通孔。 通孔的堆叠导致高的纵横比，使得通孔内的衬里和种子覆盖较差。 衬里和种子层的弱点导致电迁移（EM）故障的较高概率。 保险丝结构由于衬垫和种子覆盖不良而解决故障。 设计特征允许确定故障发生的位置，确定熔丝编程之后受损区域的程度，并防止损坏的介质区域的进一步传播。

公开(公告)号：US20110175226A1

公开(公告)日：2011-07-21

申请号：US12691213

申请日：2010-01-21

申请人： Griselda Bonilla ,  Kaushik Chanda ,  Ronald G. Filippi ,  Stephan Grunow ,  Chao-Kun Hu ,  Naftali E. Lustig ,  Andrew H. Simon ,  Ping-Chuan Wang

发明人： Griselda Bonilla ,  Kaushik Chanda ,  Ronald G. Filippi ,  Stephan Grunow ,  Chao-Kun Hu ,  Naftali E. Lustig ,  Andrew H. Simon ,  Ping-Chuan Wang

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/5226 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/76846 ,  H01L21/76847 ,  H01L23/522 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure for an integrated circuit (IC) device includes a metal line formed within a dielectric layer, the metal line having one or more vertical diffusion barriers therein; wherein the one or more vertical diffusion barriers correspond to a liner material of a via formed above the metal line, with the via extending completely through a thickness of the metal line such that a bottom most portion of the via comprises a portion of the metal line

摘要翻译： 用于集成电路（IC）器件的互连结构包括形成在电介质层内的金属线，所述金属线在其中具有一个或多个垂直扩散阻挡层; 其中所述一个或多个垂直扩散屏障对应于在所述金属线上方形成的通孔的衬垫材料，所述通孔完全延伸穿过所述金属线的厚度，使得所述通孔的最底部包括所述金属线的一部分

公开(公告)号：US07683651B2

公开(公告)日：2010-03-23

申请号：US12348434

申请日：2009-01-05

申请人： Kaushik Chanda ,  Ronald G. Filippi ,  Ping-Chuan Wang

发明人： Kaushik Chanda ,  Ronald G. Filippi ,  Ping-Chuan Wang

IPC分类号： G01R31/26 ,  G01R19/00 ,  H01L23/58

CPC分类号： G01R31/2858

摘要： A test structure for electromigration and related method are disclosed. The test structure may include an array of a plurality of multilink test sets, each multilink test set including a plurality of metal lines positioned within a dielectric material and connected in a serial configuration; each multilink test set being connected in a parallel configuration with the other multilink test sets, the parallel configuration including a first electrical connection to a cathode end of a first metal line in each multilink test set and a second electrical connection to an anode end of a last metal line in each multilink test set.

摘要翻译： 公开了用于电迁移的测试结构及相关方法。 测试结构可以包括多个多链测试集的阵列，每个多链测试集包括定位在电介质材料内并以串联配置连接的多个金属线; 每个多链路测试集合以与其他多链路测试集合的并行配置连接，所述并行配置包括到每个多链路测试集合中的第一金属线的阴极端的第一电连接和到第一金属线的阳极端的第二电连接 每条多链测试集中的最后一条金属线。

公开(公告)号：US20090072406A1

公开(公告)日：2009-03-19

申请号：US11856970

申请日：2007-09-18

申请人： Chih-Chao Yang ,  Ping-Chuan Wang ,  Kaushik Chanda

发明人： Chih-Chao Yang ,  Ping-Chuan Wang ,  Kaushik Chanda

IPC分类号： H01L21/31

CPC分类号： H01L21/76843 ,  H01L21/76846 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure in which the electromigration resistance thereof is improved without introducing a gouging feature within the interconnect structure is provided. The interconnect structure includes a metallic interfacial layer that is at least horizontally present at the bottom of an opening located within a second dielectric material that is located atop a first dielectric material that includes a first conductive material embedded therein. The metallic interfacial layer does not form an alloy with an underlying conductive material that is embedded within the first dielectric material. In some embodiments of the present invention, the metallic interfacial layer is also present on exposed sidewalls of the second dielectric material that is located atop the first dielectric material. Atop the metallic interfacial layer there is present a diffusion barrier liner. In some embodiments, the diffusion barrier liner includes a lower layer of a metallic nitride and an upper layer of a metal. In accordance with the present invention, the metallic interfacial layer also does not form an alloy with any portion of the diffusion barrier liner.

摘要翻译： 提供了一种互连结构，其中在不引入互连结构内的气蚀特征的情况下，其电迁移阻力得到改善。 互连结构包括金属界面层，其至少水平存在于位于第二介电材料内的开口的底部，该第二电介质材料位于第一电介质材料的顶部，该第一介电材料包括嵌入其中的第一导电材料。 金属界面层不与嵌入在第一介电材料内的下面的导电材料形成合金。 在本发明的一些实施例中，金属界面层也存在于位于第一介电材料顶部的第二介电材料的暴露的侧壁上。 在金属界面层顶部存在扩散阻挡层。 在一些实施例中，扩散阻挡衬里包括金属氮化物的下层和金属的上层。 根据本发明，金属界面层也不与扩散阻挡衬里的任何部分形成合金。