公开(公告)号：US5705750A

公开(公告)日：1998-01-06

申请号：US617951

申请日：1996-03-13

申请人： Kazuaki Mizukami ,  Masashi Yasuda ,  Hiroaki Arakawa ,  Mikio Hojo ,  Toshihiko Matsuhashi ,  Yoshio Ozawa ,  Atsushi Ogawa

发明人： Kazuaki Mizukami ,  Masashi Yasuda ,  Hiroaki Arakawa ,  Mikio Hojo ,  Toshihiko Matsuhashi ,  Yoshio Ozawa ,  Atsushi Ogawa

IPC分类号： G01F23/296 ,  G01N35/10 ,  G01S7/527 ,  G01S15/10 ,  G01S15/88 ,  G01N29/00 ,  B01L3/02

CPC分类号： G01N35/1009 ,  G01F23/2962 ,  G01S15/101 ,  G01N2035/1025 ,  G01N2291/02836 ,  G01S15/102 ,  G01S15/88 ,  G01S7/527

摘要： An ultrasonic sensor detects the time of rise of the first of transmitted waves and also detects peak points Po appearing in the waveform of received waves to detect a waveform reference point where the time-base coordinate of a phantom envelope connecting these peak points Po is a minimum. The time T2 of rise of the first of the received waves is calculated by adding a predetermined period of offset time To to the time t2 of the waveform reference point of the received waves to calculate the elapsed time .DELTA.T from the time of rise of the first transmitted wave to the time of rise of the first received wave. The distance L to an object of measurement is calculated based on the result of calculation. The distance L to the object can be calculated alternatively based on the elapsed time .DELTA.T' from a waveform reference point of the transmitted waves to the waveform reference point of the received waves. The sensor thus realized gives measurements with high accuracy even with use of ultrasonic waves of relatively low frequency.

摘要翻译： 超声波传感器检测第一发送波的上升时间，并且还检测出现在接收波形中的峰值点Po，以检测波形参考点，其中连接这些峰点Po的幻影包络线的时基坐标为 最低 通过将预定的偏移时间T0的周期与接收波的波形参考点的时间t2相加来计算第一个接收波的上升时间T2，以计算从上升时间起的经过时间DELTA T 第一个发射波到第一个接收波的上升时间。 基于计算结果计算到测量对象的距离L. 可以基于从发送波的波形参考点到接收波的波形参考点的经过时间DELTA T'交替地计算到对象的距离L. 如此实现的传感器即使使用相对低频率的超声波也能够高精度地进行测量。

公开(公告)号：US5557939A

公开(公告)日：1996-09-24

申请号：US438363

申请日：1995-05-10

申请人： Kazuaki Mizukami ,  Atsushi Ogawa ,  Masashi Yasuda ,  Masahiro Furukawa ,  Hidetoshi Arima ,  Yoshio Ozawa

发明人： Kazuaki Mizukami ,  Atsushi Ogawa ,  Masashi Yasuda ,  Masahiro Furukawa ,  Hidetoshi Arima ,  Yoshio Ozawa

IPC分类号： F25B15/00 ,  F25B49/04 ,  G05D15/00

CPC分类号： F25B49/043 ,  Y10T137/7297

摘要： A control system for absorption chillers which comprises a device for measuring operating state data concerning components of the main assembly of the chiller and including the liquid level of a high temperature generator and the degree of opening of a gas valve, and a fuzzy control circuit for calculating the deviation of the liquid level from a target value based on the measured operating state data, predicting a variation in the liquid level from the deviation and another item of the operating state data and calculating a control input as to the inverter frequency of an absorbent pump based on the result of prediction, whereby even when a great disturbance occurs, the liquid level of the generator can be controlled with high responsiveness to minimize the variation of the liquid level.

摘要翻译： 一种用于吸收式制冷机的控制系统，包括用于测量与制冷机主组件的组件相关的操作状态数据的装置，包括高温发生器的液位和气阀的开度，以及用于 根据测量的运行状态数据计算液位与目标值的偏差，根据偏差预测液位的变化和运算状态数据的另一项，并计算关于吸收器的逆变器频率的控制输入 基于预测结果的泵，由此即使发生大的扰动，也可以以高响应性来控制发电机的液位，以使液面的变化最小化。

公开(公告)号：US5623426A

公开(公告)日：1997-04-22

申请号：US392332

申请日：1995-02-22

申请人： Yoshio Ozawa ,  Masashi Yasuda ,  Yasuharu Kurogi ,  Kazuaki Mizukami ,  Hiroyuki Suzuki ,  Masahiro Furukawa ,  Yasushi Kamada

发明人： Yoshio Ozawa ,  Masashi Yasuda ,  Yasuharu Kurogi ,  Kazuaki Mizukami ,  Hiroyuki Suzuki ,  Masahiro Furukawa ,  Yasushi Kamada

IPC分类号： F25B49/04 ,  G05B23/02

CPC分类号： F25B49/043 ,  G05B23/0235

摘要： A failure diagnosing system for an absorption chiller including an evaporator, absorber, etc. comprises a plurality of sensors for measuring at least one representative temperatures of each of two fluids participating in heat exchange in a specified heat exchange unit, and an arithmetic unit for receiving measurement data from the sensors. The arithmetic unit comprises a circuit for calculating an actual temperature difference using a simple calculation equation defined by a linear expression, a circuit for calculating the amount of heat exchange by the absorber, and a circuit for calculating the degree of abnormality of the absorber by comparing the actual temperature difference with an ideal temperature difference for the same amount of heat exchange as the calculated amount.

摘要翻译： 用于包括蒸发器，吸收器等的吸收式制冷机的故障诊断系统包括多个传感器，用于测量在指定热交换单元中参与热交换的两种流体中的每一种的至少一个代表性温度，以及用于接收 来自传感器的测量数据。 算术单元包括用于使用由线性表达式定义的简单计算方程计算实际温差的电路，用于计算吸收器的热交换量的电路和用于通过比较计算吸收器的异常程度的电路 实际温差与理想的温差相同，换算量与计算量相同。

公开(公告)号：US5483804A

公开(公告)日：1996-01-16

申请号：US218598

申请日：1994-03-28

申请人： Atsushi Ogawa ,  Yoshio Ozawa ,  Toshimichi Hirata ,  Tsuyoshi Kawai ,  Kiyoshi Fukushima ,  Masashi Toyoshima

发明人： Atsushi Ogawa ,  Yoshio Ozawa ,  Toshimichi Hirata ,  Tsuyoshi Kawai ,  Kiyoshi Fukushima ,  Masashi Toyoshima

IPC分类号： F25D21/00 ,  F25D21/06

CPC分类号： F25D21/006 ,  F25B2600/23 ,  F25D2700/02

摘要： A defrost control apparatus for refrigerator includes a microcomputer which counts the number of opening/closing times of a door of a storage room for each of time zones within a day so as to set indexes for every time zones on the basis of the number of opening/closing times. The microcomputer also counts operating hours of a compressor and total elapsed hours, and determines a sudden phenomenon and a season. The microcomputer further selectively fetches the indexes, and generates a single index by joining a plurality of indexes so as to apply the same to a neural network included in a defrost signal generating unit. The neural network generates a defrost on/off signal on the basis of inputted data. In addition, if feature amounts are generated on the basis of the indexes by a feature detecting unit, the neural network generates the defrost on/off signal on the basis of the feature amounts.

摘要翻译： 一种用于冰箱的除霜控制装置包括微计算机，其对一天内的每个时区的储藏室的门的打开/关闭次数进行计数，以便根据开启次数设定每个时区的指标 /关闭时间。 微型计算机还计算压缩机的运行时间和总经过的时间，并确定突发现象和季节。 微型计算机进一步选择性地提取索引，并且通过连接多个索引来生成单个索引，以便将其应用于包括在除霜信号生成单元中的神经网络。 神经网络基于输入的数据产生除霜开/关信号。 此外，如果通过特征检测单元基于索引生成特征量，则神经网络基于特征量生成除霜开/关信号。

公开(公告)号：US08637915B2

公开(公告)日：2014-01-28

申请号：US13007258

申请日：2011-01-14

申请人： Masayuki Ichige ,  Fumitaka Arai ,  Riichiro Shirota ,  Toshitake Yaegashi ,  Yoshio Ozawa ,  Akihito Yamamoto ,  Ichiro Mizushima ,  Yoshihiko Saito

发明人： Masayuki Ichige ,  Fumitaka Arai ,  Riichiro Shirota ,  Toshitake Yaegashi ,  Yoshio Ozawa ,  Akihito Yamamoto ,  Ichiro Mizushima ,  Yoshihiko Saito

IPC分类号： H01L29/788

CPC分类号： H01L29/42336 ,  H01L21/28273 ,  H01L27/0207 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/7881

摘要： A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells.

摘要翻译： 非易失性半导体存储器包括具有浮动栅极和控制栅极的第一和第二存储单元。 第一和第二存储单元的浮动栅极包括第一部分和布置在第一部分上的第二部分，并且第二部分在控制栅极的延伸方向上的宽度比第一部分的宽度窄。 第一和第二存储单元的第一部分之间的第一空间填充有一种绝缘体。 控制栅极被布置在第一和第二存储单元的第二部分之间的第二空间处。

公开(公告)号：USRE44630E1

公开(公告)日：2013-12-10

申请号：US13616208

申请日：2012-09-14

申请人： Tetsuya Kai ,  Ryuji Ohba ,  Yoshio Ozawa

发明人： Tetsuya Kai ,  Ryuji Ohba ,  Yoshio Ozawa

IPC分类号： H01L21/331

CPC分类号： H01L21/28273 ,  B82Y10/00 ,  H01L21/28282 ,  H01L27/11521 ,  H01L29/42332 ,  H01L29/7881

摘要： A semiconductor device includes a semiconductor substrate, and a nonvolatile memory cell provided on the semiconductor substrate, the nonvolatile memory cell including a tunnel insulating film provided on a surface of the semiconductor substrate, the tunnel insulating film including semiconductor grains, the semiconductor grains included in both end portions of the tunnel insulating film having smaller grain size than the semiconductor grains included in other portions of the tunnel insulating film, a charge storage layer provided on the tunnel insulating film, an insulating film provided on the charge storage layer, and a control gate electrode provided on the insulating film.

摘要翻译： 半导体器件包括半导体衬底和设置在半导体衬底上的非易失性存储单元，所述非易失性存储单元包括设置在所述半导体衬底的表面上的隧道绝缘膜，所述隧道绝缘膜包括半导体晶粒，所述半导体晶粒包括在 隧道绝缘膜的两端部比隧道绝缘膜的其他部分所包含的半导体晶粒小的晶粒尺寸，隧道绝缘膜上设置的电荷存储层，设置在电荷存储层上的绝缘膜，以及控制 栅电极设置在绝缘膜上。

公开(公告)号：US08604536B2

公开(公告)日：2013-12-10

申请号：US12406841

申请日：2009-03-18

申请人： Katsuyuki Sekine ,  Yoshio Ozawa

发明人： Katsuyuki Sekine ,  Yoshio Ozawa

IPC分类号： H01L29/792

CPC分类号： H01L29/792 ,  H01L21/28282 ,  H01L29/513 ,  H01L29/66833

摘要： A semiconductor device includes a memory cell transistor including a first lower insulating film provided on a semiconductor substrate, a first intermediate insulating film provided on the first lower insulating film, a first upper insulating film provided on the first intermediate insulating film, and a first gate electrode provided on the first upper insulating film, and a select transistor including a second lower insulating film provided on the semiconductor substrate, a second intermediate insulating film provided on the second lower insulating film, a second upper insulating film provided on the second intermediate insulating film, and a second gate electrode provided on the second upper insulating film, wherein trap density of the second intermediate insulating film is lower than that of the first intermediate insulating film.

摘要翻译： 半导体器件包括存储单元晶体管，其包括设置在半导体衬底上的第一下绝缘膜，设置在第一下绝缘膜上的第一中间绝缘膜，设置在第一中间绝缘膜上的第一上绝缘膜和第一栅极 设置在第一上绝缘膜上的电极和设置在半导体衬底上的第二下绝缘膜的选择晶体管，设置在第二下绝缘膜上的第二中间绝缘膜，设置在第二中间绝缘膜上的第二上绝缘膜 以及设置在第二上绝缘膜上的第二栅电极，其中第二中间绝缘膜的阱密度低于第一中间绝缘膜的陷阱密度。

公开(公告)号：US08324679B2

公开(公告)日：2012-12-04

申请号：US13430153

申请日：2012-03-26

申请人： Masayuki Ichige ,  Fumitaka Arai ,  Riichiro Shirota ,  Toshitake Yaegashi ,  Yoshio Ozawa ,  Akihito Yamamoto ,  Ichiro Mizushima ,  Yoshihiko Saito

发明人： Masayuki Ichige ,  Fumitaka Arai ,  Riichiro Shirota ,  Toshitake Yaegashi ,  Yoshio Ozawa ,  Akihito Yamamoto ,  Ichiro Mizushima ,  Yoshihiko Saito

IPC分类号： H01L29/788

CPC分类号： H01L29/42336 ,  H01L21/28273 ,  H01L27/0207 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/7881

摘要： A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells.

摘要翻译： 非易失性半导体存储器包括具有浮动栅极和控制栅极的第一和第二存储单元。 第一和第二存储单元的浮动栅极包括第一部分和布置在第一部分上的第二部分，并且第二部分在控制栅极的延伸方向上的宽度比第一部分的宽度窄。 第一和第二存储单元的第一部分之间的第一空间填充有一种绝缘体。 控制栅极被布置在第一和第二存储单元的第二部分之间的第二空间处。

公开(公告)号：US20120282773A1

公开(公告)日：2012-11-08

申请号：US13487280

申请日：2012-06-04

申请人： Isao Kamioka ,  Junichi Shiozawa ,  Ryu Kato ,  Yoshio Ozawa

发明人： Isao Kamioka ,  Junichi Shiozawa ,  Ryu Kato ,  Yoshio Ozawa

IPC分类号： H01L21/302

CPC分类号： H01L29/7881 ,  H01L21/76208 ,  H01L27/11521 ,  H01L29/66825

摘要： In one embodiment, a method of manufacturing a semiconductor device includes forming a conductive film whose upper surface and side surface are exposed and an insulation film whose upper surface is exposed, on a semiconductor substrate. The method further includes supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the exposed side surface of the conductive film and the exposed upper surface of the insulation film, by applying a predetermined voltage to the semiconductor substrate, thereby performing anisotropic oxidation or anisotropic nitridation of the exposed side surface of the conductive film and the exposed upper surface of the insulation film.

摘要翻译： 在一个实施例中，制造半导体器件的方法包括在半导体衬底上形成其上表面和侧表面被暴露的导电膜和上表面暴露的绝缘膜。 该方法还包括通过施加微波，射频波或电子回旋共振等将由等离子体产生的等离子体中包含的氧化离子或氮化离子供应到导电膜的暴露侧表面和绝缘膜的暴露的上表面 对半导体衬底施加预定的电压，从而进行导电膜的暴露的侧表面和绝缘膜的暴露的上表面的各向异性氧化或各向异性氮化。

公开(公告)号：US08304352B2

公开(公告)日：2012-11-06

申请号：US13051031

申请日：2011-03-18

申请人： Masayuki Tanaka ,  Kazuhiro Matsuo ,  Yoshio Ozawa

发明人： Masayuki Tanaka ,  Kazuhiro Matsuo ,  Yoshio Ozawa

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28282 ,  H01L27/11568 ,  H01L27/11582

摘要： According to an embodiment, there is provided a method of manufacturing a semiconductor device, including forming a nitride film by nitriding a surface of an underlying region having a semiconductor region containing silicon as a main component and an insulating region containing silicon and oxygen as a main component and adjacent to the semiconductor region, carrying out oxidation with respect to the nitride film to convert a portion of the nitride film which is formed on the insulating region into an oxide film and to leave a portion of the nitride film which is formed on the semiconductor region as at least part of a charge storage insulating film, forming a block insulating film on the charge storage insulating film, and forming a gate electrode film on the block insulating film.

摘要翻译： 根据一个实施例，提供一种制造半导体器件的方法，包括通过氮化作为主要成分的含有硅的半导体区域的下面的区域的表面和以硅和氧为主要的绝缘区域来形成氮化物膜 并且与半导体区域相邻，相对于氮化物膜进行氧化，将形成在绝缘区域上的氮化物膜的一部分转换为氧化膜，并且使形成在该半导体层上的氮化膜的一部分 半导体区域作为电荷存储绝缘膜的至少一部分，在电荷存储绝缘膜上形成块绝缘膜，并在块绝缘膜上形成栅极电极膜。