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58 条记录 (耗时 0.025 秒)

    Object recognition system for a robot
    1.
    发明授权
    Object recognition system for a robot 失效
    机器人对象识别系统

    公开(公告)号：US4920572A

    公开(公告)日：1990-04-24

    申请号：US304563

    申请日：1989-02-01

    申请人： Kazuhiko Sugita ,  Shigeo Hotta ,  Osamu Matsuda ,  Yoichi Yamakawa

    发明人： Kazuhiko Sugita ,  Shigeo Hotta ,  Osamu Matsuda ,  Yoichi Yamakawa

    IPC分类号： G01B11/00 ,  B25J9/16 ,  B25J19/04 ,  G06K9/36 ,  G06K9/64

    CPC分类号： G06K9/6203 ,  B25J9/1697 ,  G06K9/36

    摘要： A method and a system for recognizing the location of a cylindrical shaft is provided for use in positioning an end effector of an industrial robot which handles said shaft. In the method and system, a multilevel gray image of the cylindrical shaft which is generated by a change coupled device (CCD) image sensor is first differentiated, and the absolute values of picture elements constituting the differentiated gray image are then binarized on the basis of a threshold value so as to extract an accentuated pattern image which is inherent to the shape of the cylindrical shaft. The accentuated pattern image thus extracted is then collated with a reference accentuated pattern image (template) so as to generate a normal curve signal which has its peak point at a position where the axis of said cylindrical shaft is located. The normal curve data is then binarized on the basis of another predetermined threshold value to generate a single strip image. The center of the single strip image is calculated to determine the location of the cylindrical shaft.

    Method for teaching a machining line
    2.
    发明授权
    Method for teaching a machining line 失效
    加工线教学方法

    公开(公告)号：US4906418A

    公开(公告)日：1990-03-06

    申请号：US261391

    申请日：1988-10-24

    申请人： Yasufumi Tokura ,  Shigeo Hotta ,  Osamu Matsuda ,  Hajime Fukami

    发明人： Yasufumi Tokura ,  Shigeo Hotta ,  Osamu Matsuda ,  Hajime Fukami

    IPC分类号： G05B19/42

    CPC分类号： G05B19/4207 ,  G05B2219/34101

    摘要： A method for teaching a machining line to be machined is disclosed. A borderline is formed along the machining line on a workpiece. Then, a borderline sensor is moved across the borderline at each sensing position. The positions of the sensor are stored as a teaching position at each time when the borderline is detected by the sensor. The sensing interval between each teaching position is automatically adjusted according to the change in the curvature of the borderline. At the place where the curvature of the borderline becomes large, the sensing interval is shortened in order to maintain teaching accuracy.

    摘要翻译： 公开了一种用于教导要加工的加工线的方法。 沿着工件上的加工线形成边界。 然后，边界线传感器在每个感测位置移动穿过边界线。 每当传感器检测到边界时，传感器的位置作为教学位置存储。 每个教学位置之间的感测间隔根据边界曲率的变化自动调整。 在边界曲率变大的地方，为了保持教学准确性，传感间隔缩短。

    Etching agent, etching method and liquid for preparing etching agent
    3.
    发明授权
    Etching agent, etching method and liquid for preparing etching agent 有权
    蚀刻剂，蚀刻方法和制备蚀刻剂的液体

    公开(公告)号：US08513139B2

    公开(公告)日：2013-08-20

    申请号：US12808903

    申请日：2008-12-19

    申请人： Osamu Matsuda ,  Nobuyuki Kikuchi ,  Ichiro Hayashida ,  Satoshi Shirahata

    发明人： Osamu Matsuda ,  Nobuyuki Kikuchi ,  Ichiro Hayashida ,  Satoshi Shirahata

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/30604 ,  C23F1/38 ,  C23F1/44 ,  H01L21/32134

    摘要： The present invention is directed to provide an etching agent for a semiconductor substrate, which is capable of etching a titanium (Ti)-based metal film or a tungsten (W)-based metal film on a semiconductor substrate and an etching method using relevant etching agent, and relates to a liquid for preparing the etching agent for a semiconductor substrate composed of a solution comprising (A) hydrogen peroxide, (B) a phosphonic acid chelating agent having a hydroxyl group, (C) a basic compound, and (D-1) a copper anticorrosive and/or (D-2) 0.01 to 3% by weight of two or more kinds of anion species other than phosphonic acid chelating agents having a hydroxyl group, in which anion species have no oxidizing power, an etching method characterized by etching a titanium (Ti)-based metal film or a tungsten (W)-based metal film on a semiconductor substrate using relevant etching agent for a semiconductor substrate, further, a solution comprising (B) a phosphonic acid chelating agent having a hydroxyl group, (C) a basic compound, and (D-1) a copper anticorrosive and/or (D-2) anion species other than phosphonic acid chelating agents having a hydroxyl group, in which anion species have no oxidizing power.

    摘要翻译： 本发明旨在提供一种能够在半导体衬底上蚀刻基于钛（Ti）的金属膜或基于钨（W）的金属膜的半导体衬底的蚀刻剂和使用相关蚀刻的蚀刻方法 并且涉及一种用于制备半导体衬底蚀刻剂的液体，该半导体衬底由包含（A）过氧化氢，（B）具有羟基的膦酸螯合剂，（C）碱性化合物和（D） -1）铜防腐剂和/或（D-2）0.01〜3重量％的除了具有羟基的膦酸螯合剂以外的两种或更多种阴离子物质，其中阴离子种类不具有氧化能力，蚀刻 其特征在于，使用相关的半导体衬底蚀刻剂在半导体衬底上蚀刻基于钛（Ti）的金属膜或基于钨（W））的金属膜，此外，还包括（B）膦酸螯合剂的溶液，所述膦酸螯合剂具有 一个 羟基，（C）碱性化合物和（D-1）除了具有羟基的膦酸螯合剂以外的铜防腐和/或（D-2）阴离子物质，其中阴离子种类不具有氧化能力。

    Integrated confocal optical pick-up head with a hologram and a polarizer mounted on each side of a transparent heat sink
    5.
    发明授权
    Integrated confocal optical pick-up head with a hologram and a polarizer mounted on each side of a transparent heat sink 失效
    具有全息图的集成共焦光学拾取头和安装在透明散热器两侧的偏振器

    公开(公告)号：US5703861A

    公开(公告)日：1997-12-30

    申请号：US605842

    申请日：1996-02-26

    申请人： Osamu Matsuda

    发明人： Osamu Matsuda

    IPC分类号： G11B11/10 ,  G11B7/09 ,  G11B7/12 ,  G11B7/13 ,  G11B7/135 ,  G11B11/105 ,  H01L31/10 ,  H01S3/06 ,  H01S3/1055 ,  H01S5/00 ,  H01S3/18

    CPC分类号： G11B7/1353 ,  G11B11/10543 ,  G11B7/123 ,  G11B7/133 ,  G11B7/0901 ,  G11B7/0912

    摘要： Light is emitted from a light-emitting element toward an irradiated medium, and returning light reflected by the irradiated medium is diffracted by a hologram device. A polarizer polarizes the light diffracted by the hologram device to produce first polarized light that has passed through the polarizer and second polarized light that has been reflected by the polarizer. The first polarized light is detected by a first light-detecting element, and the second polarized light is detected by a second light-detecting element. A magnetooptical signal is generated as the difference between the intensities of the first and second polarized lights which are detected respectively by the first and second light-detecting elements.

    摘要翻译： 从发光元件向照射介质发射光，并且由被照射介质反射的返回光被全息元件衍射。 偏振器使由全息装置衍射的光偏振，产生已经通过偏振器的第一偏振光和被偏振器反射的第二偏振光。 第一偏振光由第一光检测元件检测，第二偏振光由第二光检测元件检测。 产生磁光信号作为分别由第一和第二光检测元件检测的第一和第二偏振光的强度之差。

    High voltage incandescent lamp with low-pressure Kr/N.sub.2 gas fill
    6.
    发明授权
    High voltage incandescent lamp with low-pressure Kr/N.sub.2 gas fill 失效
    高压白炽灯采用低压Kr / N2气体填充

    公开(公告)号：US5537008A

    公开(公告)日：1996-07-16

    申请号：US266598

    申请日：1994-06-28

    申请人： Osamu Matsuda ,  Takahiro Yaguchi

    发明人： Osamu Matsuda ,  Takahiro Yaguchi

    IPC分类号： H01K1/32 ,  H01K1/50 ,  H05B37/00

    CPC分类号： H01K1/50

    摘要： An incandescent lamp which is operable at about 200-275 V is obtainable by enclosing a filling composition consisting of about 80-95% by volume of krypton gas and about 5-20% by volume of nitrogen gas in a glass envelope bearing a tungsten filament and an inner volume of about 0.2-1.2 ml/operating wattage in an amount of about 0.7-0.9 ml/ml of the inner volume. The incandescent lamp exhibits satisfactory luminous characteristics and an extended life expectancy without causing arc discharge even when operated at a voltage of about 200-275 V. Thus a lighting device which comprises such an incandescent lamp as the luminous source and a power source capable of energizing it at a voltage of about 200-275 V is very useful in general and special illumination.

    摘要翻译： 可在约200-275V下操作的白炽灯可以通过将包含约80-95体积％的氪气和约5-20体积％氮气的填充组合物包含在具有钨丝的玻璃封套中来获得 内容积为约0.2-1.2ml /操作功率，其量为内容积的约0.7-0.9ml / ml。 白炽灯即使在约200-275V的电压下操作，也能够发出令人满意的发光特性和延长的使用寿命，而不产生电弧放电。因此，一种照明装置，其包括作为发光源的白炽灯和能够发光的电源 它在约200-275V的电压下是非常有用的一般和特殊的照明。