公开(公告)号：US06623594B1

公开(公告)日：2003-09-23

申请号：US09348344

申请日：1999-07-08

申请人： Kazuhiko Yamamoto ,  Yuzo Akada

发明人： Kazuhiko Yamamoto ,  Yuzo Akada

IPC分类号： B32B3100

CPC分类号： H01L21/6835 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/6834 ,  Y10T428/28 ,  Y10T428/2809 ,  Y10T428/2848 ,  Y10T428/2857 ,  Y10T428/2891

摘要： A sheet for holding and protecting semiconductor wafers which can closely follow up even a wafer surface having large roughness is disclosed. The hot-melt sheet for holding and protecting semiconductor is applied to a surface of a semiconductor wafer to thereby hold and protect the semiconductor wafer in processing the semiconductor wafer. The sheet comprises a hot-melt layer A having a melting point of 105° C. or below. A pressure-sensitive adhesive layer B may be formed on one surface of the hot-melt layer A. A reinforcing layer C having a melting point higher by 20° C. or more than that of hot-melt layer A may further be formed on one surface of the hot-melt layer A, provided that when the pressure-sensitive adhesive layer B is formed on one surface of the hot-melt layer A, the reinforcing layer C is formed on the opposite surface thereof.

摘要翻译： 公开了用于保持和保护半导体晶片的片材，其可以紧密跟随甚至具有大粗糙度的晶片表面。 将用于保持和保护半导体的热熔片施加到半导体晶片的表面，从而在半导体晶片的加工中保持和保护半导体晶片。 该片材包含熔点为105℃或更低的热熔层A. 可以在热熔层A的一个表面上形成压敏粘合剂层B.可以在熔融层A上形成熔点高于20℃或更高的加热层C 在热熔层A的一个表面上，只要在热熔层A的一个表面上形成压敏粘合剂层B时，在相反的表面上形成增强层C.

公开(公告)号：US09595567B2

公开(公告)日：2017-03-14

申请号：US13585141

申请日：2012-08-14

申请人： Kazuhiko Yamamoto

发明人： Kazuhiko Yamamoto

IPC分类号： H01L29/49 ,  H01L27/24 ,  H01L29/40 ,  H01L45/00

CPC分类号： H01L27/249 ,  H01L45/08 ,  H01L45/1226 ,  H01L45/146 ,  H01L45/1616

摘要： According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a plurality of insulating layers, a plurality of first interconnection layers, a plurality of second interconnection layers, a plurality of memory cells, and a resistance change film. The insulating layers and first interconnection layers are arranged in parallel with the semiconductor substrate. The second interconnection layers are arranged so as to intersect the first interconnection layers. The second interconnection layers are arranged perpendicular to the semiconductor substrate. The memory cells are arranged at intersections of the first and second interconnection layers. Each of the memory cells includes the resistance change film arranged between the first and second interconnection layers. The side of the first interconnection layer in contact with the resistance change film is retreated more in a direction to separate from the second interconnection layer than the side of the insulating layer.

摘要翻译： 根据一个实施例，半导体存储器件包括半导体衬底，多个绝缘层，多个第一互连层，多个第二互连层，多个存储单元和电阻变化膜。 绝缘层和第一互连层与半导体衬底平行布置。 第二互连层被布置成与第一互连层相交。 第二互连层被布置成垂直于半导体衬底。 存储单元布置在第一和第二互连层的交点处。 每个存储单元包括布置在第一和第二互连层之间的电阻变化膜。 与电阻变化膜接触的第一互连层的一侧比与绝缘层的侧面沿着与第二互连层分离的方向更多地退避。

公开(公告)号：US08648323B2

公开(公告)日：2014-02-11

申请号：US12724732

申请日：2010-03-16

申请人： Kazuhiko Yamamoto ,  Takuya Konno ,  Takeshi Yamaguchi

发明人： Kazuhiko Yamamoto ,  Takuya Konno ,  Takeshi Yamaguchi

IPC分类号： H01L47/00

CPC分类号： B82Y10/00 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1273 ,  H01L45/149 ,  H01L45/1608 ,  H01L51/0046 ,  H01L51/0048

摘要： A nonvolatile memory device includes: a substrate; a first electrode formed on the substrate; a resistance change layer formed on the first electrode, the resistance change layer containing conductive nano-material; a second electrode formed on the resistance change layer; and an insulating buffer layer disposed between the first electrode and the resistance change layer, the insulating buffer layer containing conductive material dispersed therein for assuring the electric conductivity between the first electrode and the resistance change layer.

摘要翻译： 非易失性存储器件包括：衬底; 形成在所述基板上的第一电极; 形成在第一电极上的电阻变化层，电阻变化层包含导电纳米材料; 形成在电阻变化层上的第二电极; 以及设置在所述第一电极和所述电阻变化层之间的绝缘缓冲层，所述绝缘缓冲层包含分散在其中的导电材料，以确保所述第一电极和所述电阻变化层之间的导电性。

公开(公告)号：US08395138B2

公开(公告)日：2013-03-12

申请号：US12545326

申请日：2009-08-21

申请人： Kazuhiko Yamamoto ,  Kazuyuki Yahiro ,  Tsukasa Nakai

发明人： Kazuhiko Yamamoto ,  Kazuyuki Yahiro ,  Tsukasa Nakai

IPC分类号： H01L47/00 ,  H01L29/00 ,  H01L29/02 ,  H01L29/04 ,  H01L29/06 ,  H01L31/0312 ,  G11C11/00

CPC分类号： H01L45/12 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1675

摘要： A nonvolatile semiconductor memory using carbon related films as variable resistance films includes bottom electrodes formed above a substrate, buffer layers formed on the bottom electrodes and each formed of a film containing nitrogen and containing carbon as a main component, variable resistance films formed on the buffer layers and each formed of a film containing carbon as a main component and the electrical resistivity thereof being changed according to application of voltage or supply of current, and top electrodes formed on the variable resistance films.

摘要翻译： 使用碳相关膜作为可变电阻膜的非易失性半导体存储器包括形成在衬底上的底部电极，形成在底部电极上的缓冲层，并且每个由含有氮并含有碳作为主要成分的膜形成，形成在缓冲器上的可变电阻膜 层，并且各自由含有碳作为主要成分的膜形成，并且其电阻率根据施加电压或电流供应而变化，以及形成在可变电阻膜上的顶部电极。

公开(公告)号：US08378331B2

公开(公告)日：2013-02-19

申请号：US12707136

申请日：2010-02-17

申请人： Yasuhiro Satoh ,  Tsukasa Nakai ,  Kazuhiko Yamamoto ,  Motoya Kishida ,  Hiroyuki Fukumizu ,  Yasuhiro Nojiri

发明人： Yasuhiro Satoh ,  Tsukasa Nakai ,  Kazuhiko Yamamoto ,  Motoya Kishida ,  Hiroyuki Fukumizu ,  Yasuhiro Nojiri

IPC分类号： H01L29/02

CPC分类号： H01L45/1233 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/149 ,  H01L45/1641

摘要： This nonvolatile semiconductor memory device comprises a memory cell array including memory cells arranged therein. Each of the memory cells is located at respective intersections between first wirings and second wirings and includes a variable resistance element. The variable resistance element comprises a thin film including carbon (C). The thin film includes a side surface along a direction of a current flowing in the memory cell. The side surface includes carbon nitride (CNx).

摘要翻译： 该非易失性半导体存储器件包括存储单元阵列，该存储单元阵列包括布置在其中的存储单元。 每个存储单元位于第一布线和第二布线之间的相应交点处，并且包括可变电阻元件。 可变电阻元件包括包含碳（C）的薄膜。 薄膜包括沿着在存储单元中流动的电流的方向的侧表面。 侧表面包括碳氮化物（CNx）。

公开(公告)号：US08337011B2

公开(公告)日：2012-12-25

申请号：US12820278

申请日：2010-06-22

申请人： Kenichi Seguchi ,  Kazuhiko Yamamoto ,  Ichiro Miyamoto ,  Masayuki Matsubara ,  Masayoshi Iwasaki ,  Hideyuki Uemura

发明人： Kenichi Seguchi ,  Kazuhiko Yamamoto ,  Ichiro Miyamoto ,  Masayuki Matsubara ,  Masayoshi Iwasaki ,  Hideyuki Uemura

IPC分类号： B41J2/01

CPC分类号： B41M5/52 ,  B41M5/5245 ,  B41M5/5254 ,  B41M5/5263 ,  B41M5/5281 ,  B41M5/529

摘要： An inkjet recording sheet for forming an image using aqueous pigment ink that includes a substrate and an ink-receiving layer formed on the substrate. The ink-receiving layer is obtained by applying, on the substrate, a coating composition containing: a cationic acrylic silicone emulsion-based resin having a hydrolyzable silyl group as a crosslinking component; a cationic polyether-based urethane resin; and a carbodiimide group-containing resin, followed by curing the applied coating composition. In the coating composition, the content of the cationic acrylic silicone emulsion-based resin is 2 to 7% by mass, the content of the cationic polyether-based urethane resin is 88 to 94% by mass, and the content of the carbodiimide group-containing resin is 2 to 6% by mass in terms of solid matter.

摘要翻译： 一种用于使用水性颜料油墨形成图像的喷墨记录纸，其包括基板和形成在基板上的油墨接收层。 通过在基材上涂布含有水解性甲硅烷基作为交联成分的阳离子性丙烯酸类硅酮乳液类树脂的涂料组合物，得到油墨接受层; 阳离子聚醚基聚氨酯树脂; 和含碳二亚胺基团的树脂，然后固化所涂覆的涂料组合物。 在涂料组合物中，阳离子丙烯酸类硅酮乳液系树脂的含量为2〜7质量％，阳离子性聚醚系聚氨酯树脂的含量为88〜94质量％，碳二亚胺基 - 含有树脂的固体成分为2〜6质量％。

公开(公告)号：US20120217464A1

公开(公告)日：2012-08-30

申请号：US13404678

申请日：2012-02-24

申请人： Shigeki Kobayashi ,  Kazuhiko Yamamoto ,  Kenji Aoyama ,  Shigeto Oshino ,  Kei Watanabe ,  Shinichi Nakao ,  Satoshi Ishikawa ,  Takeshi Yamaguchi

发明人： Shigeki Kobayashi ,  Kazuhiko Yamamoto ,  Kenji Aoyama ,  Shigeto Oshino ,  Kei Watanabe ,  Shinichi Nakao ,  Satoshi Ishikawa ,  Takeshi Yamaguchi

IPC分类号： H01L45/00

CPC分类号： H01L27/2481 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/149

摘要： A nonvolatile storage device is formed by laminating a plurality of memory cell arrays, the memory cell array including a plurality of word lines, a plurality of bit lines, and memory cells. The memory cell includes a current rectifying device and a variable resistance device, the variable resistance device includes a lower electrode, an upper electrode, and a resistance change layer including a conductive nano material formed between the lower electrode and the upper electrode, one of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the lower electrode serving as a cathode, the other of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the upper electrode serving as a cathode.

摘要翻译： 通过层叠多个存储单元阵列形成非易失性存储装置，所述存储单元阵列包括多个字线，多个位线和存储单元。 存储单元包括电流整流装置和可变电阻装置，可变电阻装置包括下电极，上电极和包括形成在下电极和上电极之间的导电纳米材料的电阻变化层， 在层叠方向上彼此相邻设置的可变电阻装置在电阻变化层和作为阴极的下部电极之间具有钛氧化物（TiOx），另外在层叠方向上彼此相邻设置的可变电阻装置具有钛 电阻变化层和作为阴极的上部电极之间的氧化物（TiOx）。

公开(公告)号：US20110318510A1

公开(公告)日：2011-12-29

申请号：US13168108

申请日：2011-06-24

申请人： Kenichi Seguchi ,  Kazuhiko Yamamoto

发明人： Kenichi Seguchi ,  Kazuhiko Yamamoto

IPC分类号： B41M5/40

CPC分类号： B41M5/52 ,  B41M5/506 ,  B41M5/508 ,  B41M5/5218 ,  B41M5/5236 ,  B41M5/5254 ,  B41M5/5281 ,  B41M5/529

摘要： Provided is an ink jet recording medium which is capable of reproducing a wide range of gloss including high luster like metallic luster and substantially no luster due to matting by varying only the amount of applied ink and in which the consumption of a white ink used to adjust the glossiness thereof is small.

摘要翻译： 本发明提供一种喷墨记录介质，其能够再现宽范围的光泽，其包括如光泽度高的光泽，并且由于仅通过改变所施加的油墨的量而消光而基本上没有光泽，并且其中用于调节的白色油墨的消耗 其光泽度小。

公开(公告)号：US20110306199A1

公开(公告)日：2011-12-15

申请号：US13075658

申请日：2011-03-30

申请人： Yasuhiro NOJIRI ,  Hiroyuki Fukumizu ,  Shinichi Nakao ,  Kei Watanabe ,  Kazuhiko Yamamoto ,  Ichiro Mizushima ,  Yoshio Ozawa

发明人： Yasuhiro NOJIRI ,  Hiroyuki Fukumizu ,  Shinichi Nakao ,  Kei Watanabe ,  Kazuhiko Yamamoto ,  Ichiro Mizushima ,  Yoshio Ozawa

IPC分类号： H01L21/768 ,  B82Y99/00

CPC分类号： H01L51/0591 ,  B82Y10/00 ,  B82Y40/00 ,  G11C13/0002 ,  G11C13/025 ,  G11C2213/71 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/149 ,  H01L45/1608

摘要： According to one embodiment, a method is disclosed for manufacturing a nonvolatile memory device. The nonvolatile memory device includes a memory cell connected to a first interconnect and a second interconnect. The method can include forming a first electrode film on the first interconnect. The method can include forming a layer including a plurality of carbon nanotubes dispersed inside an insulator on the first electrode film. At least one carbon nanotube of the plurality of carbon nanotubes is exposed from a surface of the insulator. The method can include forming a second electrode film on the layer. In addition, the method can include forming a second interconnect on the second electrode film.

摘要翻译： 根据一个实施例，公开了一种用于制造非易失性存储器件的方法。 非易失性存储器件包括连接到第一互连和第二互连的存储单元。 该方法可以包括在第一互连上形成第一电极膜。 该方法可以包括在第一电极膜上形成分散在绝缘体内的多个碳纳米管的层。 多个碳纳米管中的至少一个碳纳米管从绝缘体的表面露出。 该方法可以包括在该层上形成第二电极膜。 此外，该方法可以包括在第二电极膜上形成第二互连。

公开(公告)号：US20100237319A1

公开(公告)日：2010-09-23

申请号：US12707136

申请日：2010-02-17

申请人： Yasuhiro SATOH ,  Tsukasa Nakai ,  Kazuhiko Yamamoto ,  Motoya Kishida ,  Hiroyuki Fukumizu ,  Yasuhiro Nojiri

发明人： Yasuhiro SATOH ,  Tsukasa Nakai ,  Kazuhiko Yamamoto ,  Motoya Kishida ,  Hiroyuki Fukumizu ,  Yasuhiro Nojiri

IPC分类号： H01L45/00

CPC分类号： H01L45/1233 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/149 ,  H01L45/1641

摘要： This nonvolatile semiconductor memory device comprises a memory cell array including memory cells arranged therein. Each of the memory cells is located at respective intersections between first wirings and second wirings and includes a variable resistance element. The variable resistance element comprises a thin film including carbon (C). The thin film includes a side surface along a direction of a current flowing in the memory cell. The side surface includes carbon nitride (CNx).

摘要翻译： 该非易失性半导体存储器件包括存储单元阵列，该存储单元阵列包括布置在其中的存储单元。 每个存储单元位于第一布线和第二布线之间的相应交点处，并且包括可变电阻元件。 可变电阻元件包括包含碳（C）的薄膜。 薄膜包括沿着在存储单元中流动的电流的方向的侧表面。 侧表面包括碳氮化物（CNx）。