公开(公告)号：US08735821B2

公开(公告)日：2014-05-27

申请号：US13428746

申请日：2012-03-23

申请人： Koichi Ishii ,  Kazuhiro Suzuki ,  Hiroto Honda ,  Hideyuki Funaki ,  Risako Ueno ,  Honam Kwon

发明人： Koichi Ishii ,  Kazuhiro Suzuki ,  Hiroto Honda ,  Hideyuki Funaki ,  Risako Ueno ,  Honam Kwon

IPC分类号： G01J5/20 ,  H01L27/146 ,  G01J5/14

CPC分类号： G01J5/14 ,  G01J5/04 ,  G01J5/045 ,  G01J5/08 ,  G01J5/0806 ,  G01J5/0853 ,  G01J5/10 ,  G01J5/22 ,  H01L27/14649 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/00

摘要： An infrared imaging device, including: connection wiring portions arranged in matrix form on a substrate which is mounted in a package; first and second infrared detecting portions configured to convert intensity of absorbed infrared radiation into respective first and second signals, the second infrared detecting portion being smaller in thermal conductance than the first infrared detecting portion; and a lid member attached to the package so as to define an air-tight gap with the substrate, the connection wiring portions, the first and second infrared detecting portions being accommodated within the gap; wherein a degree-of-vacuum is measured within the gap and a warning issued based on the measured degree-of-vacuum.

摘要翻译： 一种红外成像装置，包括：以矩阵形式布置在安装在包装中的基板上的连接布线部分; 第一红外线检测部和第二红外线检测部，被配置为将吸收的红外辐射的强度转换为相应的第一和第二信号，第二红外线检测部的导热性比第一红外线检测部小。 以及盖构件，其附接到所述封装件以限定与所述基板的气密间隙，所述连接布线部分，所述第一和第二红外检测部分容纳在所述间隙内; 其中在所述间隙内测量真空度，并且基于所测量的真空度发出警告。

公开(公告)号：US08629396B2

公开(公告)日：2014-01-14

申请号：US13235388

申请日：2011-09-18

申请人： Masako Ogata ,  Ikuo Fujiwara ,  Hiroto Honda ,  Kazuhiro Suzuki ,  Honam Kwon ,  Risako Ueno ,  Hitoshi Yagi ,  Masaki Atsuta ,  Koichi Ishii ,  Keita Sasaki ,  Hideyuki Funaki

发明人： Masako Ogata ,  Ikuo Fujiwara ,  Hiroto Honda ,  Kazuhiro Suzuki ,  Honam Kwon ,  Risako Ueno ,  Hitoshi Yagi ,  Masaki Atsuta ,  Koichi Ishii ,  Keita Sasaki ,  Hideyuki Funaki

IPC分类号： H01L27/146

CPC分类号： H01L27/14649 ,  H01L27/14632 ,  H01L27/14687

摘要： An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.

摘要翻译： 非制冷红外成像元件包括像素区域，器件区域和支撑衬底。 像素区域包括热敏像素。 热敏像素被布置成矩阵并且根据接收到的红外线量来改变其电流 - 电压特性。 器件区域包括驱动电路和包括MOS晶体管的读出电路中的至少一个。 驱动电路驱动热敏像素。 读出电路检测热敏像素的信号。 支撑基板设置有在像素区域下方的空腔区域和MOS晶体管。

公开(公告)号：US20130242161A1

公开(公告)日：2013-09-19

申请号：US13714960

申请日：2012-12-14

申请人： Mitsuyoshi Kobayashi ,  Risako Ueno ,  Kazuhiro Suzuki ,  Hiroto Honda ,  Hideyuki Funaki

发明人： Mitsuyoshi Kobayashi ,  Risako Ueno ,  Kazuhiro Suzuki ,  Hiroto Honda ,  Hideyuki Funaki

IPC分类号： H04N5/225

CPC分类号： H04N5/2254 ,  H04N5/2171

摘要： A solid-state imaging device according to an embodiment includes: an imaging element including a plurality of pixel blocks each containing a plurality of pixels; a first optical system forming an image of an object on an imaging plane; and a second optical system including a microlens array, the microlens array including a light transmissive substrate, a plurality of first microlenses formed on the light transmissive substrate, and a plurality of second microlenses formed around the first microlenses, a focal length of the first microlenses being substantially equal to a focal length of the second microlenses, an area of the first microlenses in contact with the light transmissive substrate being larger than an area of the second microlenses in contact with the light transmissive substrate, the second optical system being configured to reduce and reconstruct the image formed on the imaging plane on the pixel blocks via the microlens array.

摘要翻译： 根据实施例的固态成像装置包括：成像元件，其包括多个像素块，每个像素块包含多个像素; 第一光学系统，其在成像平面上形成物体的图像; 以及包括微透镜阵列的第二光学系统，所述微透镜阵列包括透光衬底，形成在所述透光衬底上的多个第一微透镜以及围绕所述第一微透镜形成的多个第二微透镜，所述第一微透镜的焦距 基本上等于第二微透镜的焦距，与透光基板接触的第一微透镜的面积大于与透光基板接触的第二微透镜的面积，第二光学系统被配置为减小 并且通过微透镜阵列重建在像素块上的成像平面上形成的图像。

公开(公告)号：US20120007205A1

公开(公告)日：2012-01-12

申请号：US12883732

申请日：2010-09-16

申请人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

发明人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

IPC分类号： H01L31/101 ,  H01L31/18

CPC分类号： G01J5/02 ,  G01J5/023 ,  G01J5/024 ,  H04N5/33

摘要： Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.

摘要翻译： 某些实施例提供了一种红外成像装置，包括：SOI结构，其被放置在离基板一定距离处，并且包括：热敏二极管，其检测红外线并将红外线转换成热; 以及将热敏二极管彼此分离的STI区域; 堆叠在SOI结构上的层间绝缘膜; 以及连接到热敏二极管的支撑腿和设置在热敏二极管的外周区域中的垂直信号线。 每个支撑腿包括：将信号传输到垂直信号线的互连单元; 以及层叠绝缘层，夹着所述互连单元，所述层间绝缘层的每个底侧位于比所述SOI结构更高的位置。

公开(公告)号：US20130248714A1

公开(公告)日：2013-09-26

申请号：US13728009

申请日：2012-12-27

申请人： Hiroto Honda ,  Kazuhiro Suzuki ,  Hideyuki Funaki ,  Masaki Atsuta ,  Keita Sasaki ,  Koichi Ishii ,  Honam Kwon

发明人： Hiroto Honda ,  Kazuhiro Suzuki ,  Hideyuki Funaki ,  Masaki Atsuta ,  Keita Sasaki ,  Koichi Ishii ,  Honam Kwon

IPC分类号： H01L27/146 ,  G01J5/20

CPC分类号： G01J5/12 ,  G01J5/023 ,  G01J5/20 ,  G01J5/22 ,  G01J2005/0077 ,  H01L27/14649 ,  H04N5/33

摘要： An uncooled infrared imaging device according to an embodiment includes: reference pixels formed on a semiconductor substrate and arranged in at least one row; and infrared detection pixels arranged in the remaining rows and detecting incident infrared rays. Each of the reference pixels includes a first cell located above a first concave portion. The first cell includes a first thermoelectric conversion unit having a first infrared absorption film; and a first thermoelectric conversion element. Each of the infrared detection pixels includes a second cell located above a second concave portion, and having a larger area than the first cell. The second cell includes: a second thermoelectric converting unit located above the second concave portion; and first and second supporting structure units supporting the second thermoelectric converting unit above the second concave portion. The second thermoelectric converting unit includes: a second infrared absorption film; and a second thermoelectric conversion element.

摘要翻译： 根据实施例的非冷却红外成像装置包括：形成在半导体衬底上并布置在至少一行中的参考像素; 以及布置在其余行中的红外检测像素，并检测入射的红外线。 每个参考像素包括位于第一凹部上方的第一单元。 第一电池包括具有第一红外线吸收膜的第一热电转换单元; 和第一热电转换元件。 每个红外检测像素包括位于第二凹部上方的第二单元，并且具有比第一单元更大的面积。 第二单元包括：位于第二凹部上方的第二热电转换单元; 以及第一和第二支撑结构单元，其在第二凹部上方支撑第二热电转换单元。 第二热电转换单元包括：第二红外线吸收膜; 和第二热电转换元件。

公开(公告)号：US20090236526A1

公开(公告)日：2009-09-24

申请号：US12405497

申请日：2009-03-17

申请人： Keita Sasaki ,  Hiroto Honda ,  Hideyuki Funaki ,  Ikuo Fujiwara ,  Kazuhiro Suzuki

发明人： Keita Sasaki ,  Hiroto Honda ,  Hideyuki Funaki ,  Ikuo Fujiwara ,  Kazuhiro Suzuki

IPC分类号： H01L27/14

CPC分类号： G01J5/02 ,  G01J5/023 ,  G01J5/024 ,  G01J5/045 ,  G01J5/08 ,  G01J5/0853

摘要： An infrared ray sensor element includes: a first signal wiring part including a first signal wire and provided on a first region of a semiconductor substrate different from a region on which a concave part is provided; a second signal wiring part including a second signal wire and provided on the first region so as to intersect the first signal wiring part; a supporter including a support wiring part disposed over the concave part, and including a first wire electrically connected at a first end thereof to the first signal wire, and a second wire insulated from the first wire, disposed in parallel with the first wire, and electrically connected at a first end thereof to the second signal wire; a thermoelectric transducer electrically connected to second ends of the first and second wires; an infrared ray absorption layer provided over the thermoelectric transducer; and a detection cell provided over the concave part.

摘要翻译： 一种红外线传感器元件包括：第一信号布线部，包括第一信号线，设置在与设置有凹部的区域不同的半导体基板的第一区域上; 第二信号布线部分，包括第二信号线，并设置在第一区域上，以与第一信号布线部分相交; 支撑件，其包括设置在所述凹部上方的支撑布线部，并且包括在其第一端处电连接到所述第一信号线的第一线和与所述第一线平行布置的与所述第一线绝缘的第二线，以及 在其第一端电连接到第二信号线; 电连接到第一和第二导线的第二端的热电换能器; 设置在所述热电换能器上的红外线吸收层; 以及设置在所述凹部上的检测单元。

公开(公告)号：US08937274B2

公开(公告)日：2015-01-20

申请号：US13713304

申请日：2012-12-13

申请人： Risako Ueno ,  Hiroto Honda ,  Mitsuyoshi Kobayashi ,  Kazuhiro Suzuki ,  Honam Kwon ,  Hideyuki Funaki

发明人： Risako Ueno ,  Hiroto Honda ,  Mitsuyoshi Kobayashi ,  Kazuhiro Suzuki ,  Honam Kwon ,  Hideyuki Funaki

IPC分类号： H01L27/00 ,  H01L27/146

CPC分类号： H01L27/146 ,  H01L27/14605 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14645

摘要： A solid-state imaging device according to an embodiment includes: an imaging element including a semiconductor substrate and a plurality of pixel blocks, each of the pixel blocks including at least two of R pixels, G pixels, B pixels, and W pixels; a first optical system configured to form an image of an object on an imaging plane; and a second optical system including a microlens array having a plurality of microlenses provided for the respective pixels blocks, the second optical system being located between the imaging element and the first optical system, the second optical system being configured to reduce and re-image the image formed on the imaging plane onto each of the pixel blocks. A proportion of the W pixels to be provided increases in a direction from a center of each pixel block toward an outer periphery thereof.

摘要翻译： 根据实施例的固态成像装置包括：成像元件，包括半导体衬底和多个像素块，每个像素块包括R像素，G像素，B像素和W像素中的至少两个; 第一光学系统，被配置为在成像平面上形成物体的图像; 以及第二光学系统，其包括具有为各个像素块设置的多个微透镜的微透镜阵列，所述第二光学系统位于所述成像元件和所述第一光学系统之间，所述第二光学系统被配置为减小并重新成像 在成像平面上形成的每个像素块上的图像。 要提供的W像素的比例在从每个像素块的中心朝向其外周的方向上增加。

公开(公告)号：US08304848B2

公开(公告)日：2012-11-06

申请号：US12883732

申请日：2010-09-16

申请人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

发明人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

IPC分类号： H01L31/00 ,  H01L31/04

CPC分类号： G01J5/02 ,  G01J5/023 ,  G01J5/024 ,  H04N5/33

摘要： Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.

摘要翻译： 某些实施例提供了一种红外成像装置，包括：SOI结构，其被放置在离基板一定距离处，并且包括：热敏二极管，其检测红外线并将红外线转换成热; 以及将热敏二极管彼此分离的STI区域; 堆叠在SOI结构上的层间绝缘膜; 以及连接到热敏二极管的支撑腿和设置在热敏二极管的外周区域中的垂直信号线。 每个支撑腿包括：将信号传输到垂直信号线的互连单元; 以及层叠绝缘层，夹着所述互连单元，所述层间绝缘层的每个底侧位于比所述SOI结构更高的位置。

公开(公告)号：US20130093902A1

公开(公告)日：2013-04-18

申请号：US13648376

申请日：2012-10-10

申请人： Hiroto HONDA ,  Hideyuki Funaki ,  Keita Sasaki ,  Kazuhiro Suzuki ,  Masaki Atsuta ,  Koichi Ishii ,  Ikuo Fujiwara

发明人： Hiroto HONDA ,  Hideyuki Funaki ,  Keita Sasaki ,  Kazuhiro Suzuki ,  Masaki Atsuta ,  Koichi Ishii ,  Ikuo Fujiwara

IPC分类号： H04N5/33

CPC分类号： H04N5/33 ,  H04N5/3597

摘要： An infrared solid state imaging device includes an infrared detection element unit having heat sensitive pixels, an AD conversion unit which conducts analog-to-digital conversion on an infrared image signal obtained by the infrared detection element unit, and a digital signal processing unit which converts the image signal converted to a digital signal. The digital signal processing unit stores an image value produced from the digital signal, and acquired in a frame immediately preceding a current frame, subtracts an image value obtained by multiplying the image value acquired in the frame immediately preceding the current frame by a predetermined constant α in a range of 0 to 1, from an image value acquired in the current frame, and conducts processing of multiplying a resultant image value obtained by the subtraction by 1/(1−α) so that an infrared image with less afterimage is provided.

摘要翻译： 一种红外固体摄像装置，具备：具有热敏像素的红外线检测元件单元，对由红外线检测元件单元得到的红外图像信号进行模数变换的AD转换单元;以及数字信号处理单元， 图像信号转换成数字信号。 数字信号处理单元存储从数字信号产生并且在紧邻当前帧之前的帧中获取的图像值，减去通过将在当前帧之前的帧中获取的图像值乘以预定常数α而获得的图像值 在从当前帧中获取的图像值的0到1的范围内，并且进行将通过减法获得的合成图像值乘以1 /（1-α）的处理，使得提供具有较少余像的红外图像。

公开(公告)号：US08338902B2

公开(公告)日：2012-12-25

申请号：US13050512

申请日：2011-03-17

申请人： Honam Kwon ,  Hideyuki Funaki ,  Hiroto Honda ,  Hitoshi Yagi ,  Ikuo Fujiwara ,  Masaki Atsuta ,  Kazuhiro Suzuki ,  Keita Sasaki ,  Koichi Ishii

发明人： Honam Kwon ,  Hideyuki Funaki ,  Hiroto Honda ,  Hitoshi Yagi ,  Ikuo Fujiwara ,  Masaki Atsuta ,  Kazuhiro Suzuki ,  Keita Sasaki ,  Koichi Ishii

IPC分类号： H01L31/024

CPC分类号： H01L27/14649 ,  G01J5/007 ,  G01J5/20 ,  G01J2005/068

摘要： An uncooled infrared image sensor according to an embodiments includes: a plurality of pixel cells formed in a first region on a semiconductor substrate; a reference pixel cell formed in a second region on the semiconductor substrate and corresponding to each row or each column of the pixel cells; a supporting unit formed for each of the pixel cell and supporting a corresponding pixel cell; and an interconnect unit formed for each reference pixel cell. Each of the pixel cells includes: a first infrared absorption film and a first heat sensitive element. The reference pixel cell includes: a second infrared absorption film and a second heat sensitive element, the second heat sensitive element having the same characteristics as characteristics of the first heat sensitive element. The third and fourth interconnects of the interconnect unit have the same electrical resistance as electrical resistance of the first and second interconnects of the supporting unit.

摘要翻译： 根据实施例的非制冷红外图像传感器包括：形成在半导体衬底上的第一区域中的多个像素单元; 形成在所述半导体衬底上的与所述像素单元的每列或每列相对应的所述半导体衬底上的第二区域中的参考像素单元; 为每个像素单元形成的支撑单元，并支撑相应的像素单元; 以及为每个参考像素单元形成的互连单元。 每个像素单元包括：第一红外线吸收膜和第一热敏元件。 参考像素单元包括：第二红外线吸收膜和第二热敏元件，第二热敏元件具有与第一热敏元件的特性相同的特性。 互连单元的第三和第四互连具有与支撑单元的第一和第二互连的电阻相同的电阻。