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公开(公告)号：US09212419B2
公开(公告)日：2015-12-15
申请号：US12737550
申请日：2009-07-31
申请人： Kazunari Maki , Kenichi Yaguchi , Yosuke Nakasato , Haruhiko Asao
发明人： Kazunari Maki , Kenichi Yaguchi , Yosuke Nakasato , Haruhiko Asao
IPC分类号： C23C14/34 , C22C9/00 , C22C9/01 , C22C9/05 , C23C14/16 , H01L21/285 , H01L23/532 , H05K1/09 , C23C14/14 , H05K1/03 , H05K3/16
CPC分类号： C23C14/3414 , C22C9/00 , C22C9/01 , C22C9/05 , C23C14/14 , C23C14/165 , H01L21/2855 , H01L23/53233 , H01L2924/0002 , H05K1/0306 , H05K1/09 , H05K3/16 , Y10T428/12431 , H01L2924/00
摘要： A copper alloy wiring film of a flat panel display of the present invention and a sputtering target for forming the same have a composition including Mg: 0.1 to 5 atom %; either one or both of Mn and Al: 0.1 to 11 atom % in total; and Cu and inevitable impurities as the balance, and if necessary, may be further including P: 0.001 to 0.1 atom %.
摘要翻译： 本发明的平板显示器用铜合金布线膜及其形成用溅射靶具有Mg：0.1〜5原子％的组成， Mn和Al中的一种或两种：总共为0.1〜11原子％ Cu和不可避免的杂质作为余量，如果需要还可以包括P：0.001〜0.1原子％。
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公开(公告)号：US20110281134A1
公开(公告)日：2011-11-17
申请号：US12737550
申请日：2009-07-31
申请人： Kazunari Maki , Kenichi Yaguchi , Yosuke Nakasato , Haruhiko Asao
发明人： Kazunari Maki , Kenichi Yaguchi , Yosuke Nakasato , Haruhiko Asao
CPC分类号： C23C14/3414 , C22C9/00 , C22C9/01 , C22C9/05 , C23C14/14 , C23C14/165 , H01L21/2855 , H01L23/53233 , H01L2924/0002 , H05K1/0306 , H05K1/09 , H05K3/16 , Y10T428/12431 , H01L2924/00
摘要： A copper alloy wiring film of a flat panel display of the present invention and a sputtering target for forming the same have a composition including Mg: 0.1 to 5 atom %; either one or both of Mn and Al: 0.1 to 11 atom % in total; and Cu and inevitable impurities as the balance, and if necessary, may be further including P: 0.001 to 0.1 atom %.
摘要翻译： 本发明的平板显示器用铜合金布线膜及其形成用溅射靶具有Mg：0.1〜5原子％的组成， Mn和Al中的一种或两种：总共为0.1〜11原子％ Cu和不可避免的杂质作为余量，如果需要还可以包括P：0.001〜0.1原子％。
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公开(公告)号：US20120068265A1
公开(公告)日：2012-03-22
申请号：US13265022
申请日：2010-05-11
申请人： Kazunari Maki , Kenichi Yaguchi , Yosuke Nakasato
发明人： Kazunari Maki , Kenichi Yaguchi , Yosuke Nakasato
IPC分类号： H01L29/786 , H05K3/06 , H01L21/04 , H01L29/40 , H01L21/768
CPC分类号： H01L23/53238 , C22C9/00 , C22C9/01 , H01L27/124 , H01L29/45 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： This wiring layer structure includes: an underlying substrate of a semiconductor substrate or a glass substrate; an oxygen-containing Cu layer or an oxygen-containing Cu alloy layer which is formed on the underlying substrate; an oxide layer containing at least one of Al, Zr, and Ti which is formed on the oxygen-containing Cu layer or the oxygen-containing Cu alloy layer; and a Cu alloy layer containing at least one of Al, Zr, and Ti which is formed on the oxide layer.
摘要翻译： 该布线层结构包括：半导体衬底或玻璃衬底的下面的衬底; 形成在下层基板上的含氧Cu层或含氧Cu合金层; 包含在含氧Cu层或含氧Cu合金层上形成的Al，Zr和Ti中的至少一种的氧化物层; 以及形成在所述氧化物层上的包含Al，Zr和Ti中的至少一种的Cu合金层。
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4.发明申请THIN FILM TRANSISTOR HAVING A BARRIER LAYER AS A CONSTITUTING LAYER AND Cu-ALLOY SPUTTERING TARGET USED FOR SPUTTER FILM FORMATION OF THE BARRIER LAYER 有权具有作为构成层的障碍层的薄膜晶体管和用于形成障碍层的溅射膜的铜合金溅射靶公开(公告)号：US20110309444A1
公开(公告)日：2011-12-22
申请号：US13138159
申请日：2009-10-22
申请人： Kazunari Maki , Kenichi Yaguchi , Yosuke Nakasato , Satoru Mori
发明人： Kazunari Maki , Kenichi Yaguchi , Yosuke Nakasato , Satoru Mori
IPC分类号： H01L29/772
CPC分类号： H01L29/458 , C22C9/01 , C23C14/165 , C23C14/3414 , H01L29/4908 , H01L29/66765
摘要： This Cu alloy sputtering target includes, in terms of atomic percent: Al: 1% to 10%; and Ca: 0.1% to 2%, with the balance being Cu and 1% or less of inevitable impurities. This thin film transistor includes: a gate electrode layer joined to the surface of a glass substrate through an adhesion layer; a gate insulating layer; a Si semiconductor layer; an n-type Si semiconductor layer; a barrier layer; a wire layer composed of a drain electrode layer and a source electrode layer, both of which are mutually divided; a passivation layer; and a transparent electrode layer, wherein the barrier layer is formed by sputtering under an oxidizing atmosphere using the Cu alloy sputtering target.
摘要翻译： 该Cu合金溅射靶的原子百分比：Al：1〜10％ Ca：0.1〜2％，余量为Cu和1％以下不可避免的杂质。 该薄膜晶体管包括：通过粘合层接合到玻璃基板的表面的栅电极层; 栅极绝缘层; Si半导体层; n型Si半导体层; 阻挡层; 由漏极电极层和源电极层构成的导线层，两者都相互分开; 钝化层; 以及透明电极层，其中通过使用Cu合金溅射靶在氧化气氛下通过溅射形成阻挡层。
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5.发明授权公开(公告)号：US08624397B2
公开(公告)日：2014-01-07
申请号：US13265022
申请日：2010-05-11
申请人： Kazunari Maki , Kenichi Yaguchi , Yosuke Nakasato
发明人： Kazunari Maki , Kenichi Yaguchi , Yosuke Nakasato
IPC分类号： H01L29/40 , H01L21/4763
CPC分类号： H01L23/53238 , C22C9/00 , C22C9/01 , H01L27/124 , H01L29/45 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： This wiring layer structure includes: an underlying substrate of a semiconductor substrate or a glass substrate; an oxygen-containing Cu layer or an oxygen-containing Cu alloy layer which is formed on the underlying substrate; an oxide layer containing at least one of Al, Zr, and Ti which is formed on the oxygen-containing Cu layer or the oxygen-containing Cu alloy layer; and a Cu alloy layer containing at least one of Al, Zr, and Ti which is formed on the oxide layer.
摘要翻译： 该布线层结构包括：半导体衬底或玻璃衬底的下面的衬底; 形成在下层基板上的含氧Cu层或含氧Cu合金层; 包含在含氧Cu层或含氧Cu合金层上形成的Al，Zr和Ti中的至少一种的氧化物层; 以及形成在所述氧化物层上的包含Al，Zr和Ti中的至少一种的Cu合金层。
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公开(公告)号：US20110192719A1
公开(公告)日：2011-08-11
申请号：US12998444
申请日：2009-10-21
申请人： Kazunari Maki , Masato Koide , Satoru Mori , Kenichi Yaguchi , Yosuke Nakasato
发明人： Kazunari Maki , Masato Koide , Satoru Mori , Kenichi Yaguchi , Yosuke Nakasato
CPC分类号： H01L23/53233 , C22C9/00 , C23C14/165 , C23C14/3414 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： This sputtering target for forming a thin film transistor wiring film has a composition including 0.1 at % to 5 at % of Mg, 0.1 at % to 10 at % of Ca, and the remainder being Cu and inevitable impurities. Either one or both of Mn and Al may further be included at a total amount in a range of 0.1 at % to 10 at %. 0.001 at % to 0.1 at % of P may further be included.
摘要翻译： 用于形成薄膜晶体管布线膜的溅射靶具有包含0.1原子％至5原子％的Mg，0.1原子％至10原子％的Ca，其余为Cu和不可避免的杂质的组成。 Mn和Al中的一种或两种可以进一步包含在0.1at％至10at％的范围内的总量。 可以进一步包括0.001at％至0.1at％的P。
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7.发明授权Thin film transistor having a barrier layer as a constituting layer and Cu-alloy sputtering target used for sputter film formation of the barrier layer 有权具有作为构成层的阻挡层和用于阻挡层的溅射膜形成的Cu合金溅射靶的薄膜晶体管公开(公告)号：US08658009B2
公开(公告)日：2014-02-25
申请号：US13138159
申请日：2009-10-22
申请人： Kazunari Maki , Kenichi Yaguchi , Yosuke Nakasato , Satoru Mori
发明人： Kazunari Maki , Kenichi Yaguchi , Yosuke Nakasato , Satoru Mori
IPC分类号： C23C14/34
CPC分类号： H01L29/458 , C22C9/01 , C23C14/165 , C23C14/3414 , H01L29/4908 , H01L29/66765
摘要： This Cu alloy sputtering target includes, in terms of atomic percent: Al: 1% to 10%; and Ca: 0.1% to 2%, with the balance being Cu and 1% or less of inevitable impurities. This thin film transistor includes: a gate electrode layer joined to the surface of a glass substrate through an adhesion layer; a gate insulating layer; a Si semiconductor layer; an n-type Si semiconductor layer; a barrier layer; a wire layer composed of a drain electrode layer and a source electrode layer, both of which are mutually divided; a passivation layer; and a transparent electrode layer, wherein the barrier layer is formed by sputtering under an oxidizing atmosphere using the Cu alloy sputtering target.
摘要翻译： 该Cu合金溅射靶的原子百分比：Al：1〜10％ Ca：0.1〜2％，余量为Cu和1％以下不可避免的杂质。 该薄膜晶体管包括：通过粘合层接合到玻璃基板的表面的栅电极层; 栅极绝缘层; Si半导体层; n型Si半导体层; 阻挡层; 由漏极电极层和源电极层构成的导线层，两者都相互分开; 钝化层; 以及透明电极层，其中通过使用Cu合金溅射靶在氧化气氛下通过溅射形成阻挡层。
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公开(公告)号：US4494831A
公开(公告)日：1985-01-22
申请号：US319619
申请日：1981-11-09
CPC分类号： G02C5/00 , B23K35/3006 , Y10T428/12806
摘要： This specification discloses a spectacle frame of titanium or titanium alloy having at least one location a brazed portion of titanium or titanium alloy joined with titanium or titanium alloy, or of titanium or titanium alloy joined with other metal, characterized in that silver-zinc alloy comprising 70-95% by weight of silver and 5-30% by weight of zinc is used as the brazing filler metal material for brazing.
摘要翻译： 本说明书公开了一种具有钛或钛合金的眼镜架，其具有与钛或钛合金或与其他金属结合的钛或钛合金的至少一个位置的钛或钛合金的钎焊部分，其特征在于，所述银 - 锌合金包含 使用70-95重量％的银和5-30重量％的锌作为用于钎焊的钎料。
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9.发明申请THERMO-MECHANICAL PROCESS TO ENHANCE THE QUALITY OF GRAIN BOUNDARY NETWORKS IN METAL ALLOYS 审中-公开加强金属合金中粒子边界网络质量的机械加工过程公开(公告)号：US20120192997A1
公开(公告)日：2012-08-02
申请号：US13019124
申请日：2011-02-01
IPC分类号： C21D8/00
摘要： Methods to enhance the quality of grain boundary networks are described. The process can result in the production of a metal including a relatively large fraction of special grain boundaries (e.g., a fraction of special grain boundaries of at least about 55%).
摘要翻译： 描述了提高晶界网络质量的方法。 该方法可以产生包括相当大部分特殊晶界（例如，至少约55％的特殊晶界的一部分）的金属。
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公开(公告)号：US06491389B2
公开(公告)日：2002-12-10
申请号：US09897384
申请日：2001-07-03
申请人： Kenichi Yaguchi
发明人： Kenichi Yaguchi
IPC分类号： G02B514
摘要： A spectacle frame with ear bends each comprising an auricular front member connected to a temple, an auricular back member contactable with the back of the ear, and a connecting member for connecting the front member and the back member to be rotatable. The spectacle frame further comprises selective pressing means capable of changing a first state in which the back member presses the back of the ear with a second state in which the back member does not press the back of the ear.
摘要翻译： 具有耳部弯曲部的眼镜架，每个眼镜包括连接到镜腿的耳部前部构件，可与耳部后部接触的耳状部件，以及用于连接前部构件和后部构件以可旋转的连接构件。 眼镜架还包括选择性按压装置，其能够改变第二状态，其中背部构件按压耳部后部的第一状态，其中后部构件不按压耳朵的后部。
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