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    THIN FILM TRANSISTOR HAVING A BARRIER LAYER AS A CONSTITUTING LAYER AND Cu-ALLOY SPUTTERING TARGET USED FOR SPUTTER FILM FORMATION OF THE BARRIER LAYER
    4.
    发明申请
    THIN FILM TRANSISTOR HAVING A BARRIER LAYER AS A CONSTITUTING LAYER AND Cu-ALLOY SPUTTERING TARGET USED FOR SPUTTER FILM FORMATION OF THE BARRIER LAYER 有权
    具有作为构成层的障碍层的薄膜晶体管和用于形成障碍层的溅射膜的铜合金溅射靶

    公开(公告)号：US20110309444A1

    公开(公告)日：2011-12-22

    申请号：US13138159

    申请日：2009-10-22

    申请人： Kazunari Maki ,  Kenichi Yaguchi ,  Yosuke Nakasato ,  Satoru Mori

    发明人： Kazunari Maki ,  Kenichi Yaguchi ,  Yosuke Nakasato ,  Satoru Mori

    IPC分类号： H01L29/772

    CPC分类号： H01L29/458 ,  C22C9/01 ,  C23C14/165 ,  C23C14/3414 ,  H01L29/4908 ,  H01L29/66765

    摘要： This Cu alloy sputtering target includes, in terms of atomic percent: Al: 1% to 10%; and Ca: 0.1% to 2%, with the balance being Cu and 1% or less of inevitable impurities. This thin film transistor includes: a gate electrode layer joined to the surface of a glass substrate through an adhesion layer; a gate insulating layer; a Si semiconductor layer; an n-type Si semiconductor layer; a barrier layer; a wire layer composed of a drain electrode layer and a source electrode layer, both of which are mutually divided; a passivation layer; and a transparent electrode layer, wherein the barrier layer is formed by sputtering under an oxidizing atmosphere using the Cu alloy sputtering target.

    摘要翻译： 该Cu合金溅射靶的原子百分比：Al：1〜10％ Ca：0.1〜2％，余量为Cu和1％以下不可避免的杂质。 该薄膜晶体管包括：通过粘合层接合到玻璃基板的表面的栅电极层; 栅极绝缘层; Si半导体层; n型Si半导体层; 阻挡层; 由漏极电极层和源电极层构成的导线层，两者都相互分开; 钝化层; 以及透明电极层，其中通过使用Cu合金溅射靶在氧化气氛下通过溅射形成阻挡层。

    Thin film transistor having a barrier layer as a constituting layer and Cu-alloy sputtering target used for sputter film formation of the barrier layer
    6.
    发明授权
    Thin film transistor having a barrier layer as a constituting layer and Cu-alloy sputtering target used for sputter film formation of the barrier layer 有权
    具有作为构成层的阻挡层和用于阻挡层的溅射膜形成的Cu合金溅射靶的薄膜晶体管

    公开(公告)号：US08658009B2

    公开(公告)日：2014-02-25

    申请号：US13138159

    申请日：2009-10-22

    申请人： Kazunari Maki ,  Kenichi Yaguchi ,  Yosuke Nakasato ,  Satoru Mori

    发明人： Kazunari Maki ,  Kenichi Yaguchi ,  Yosuke Nakasato ,  Satoru Mori

    IPC分类号： C23C14/34

    CPC分类号： H01L29/458 ,  C22C9/01 ,  C23C14/165 ,  C23C14/3414 ,  H01L29/4908 ,  H01L29/66765

    摘要： This Cu alloy sputtering target includes, in terms of atomic percent: Al: 1% to 10%; and Ca: 0.1% to 2%, with the balance being Cu and 1% or less of inevitable impurities. This thin film transistor includes: a gate electrode layer joined to the surface of a glass substrate through an adhesion layer; a gate insulating layer; a Si semiconductor layer; an n-type Si semiconductor layer; a barrier layer; a wire layer composed of a drain electrode layer and a source electrode layer, both of which are mutually divided; a passivation layer; and a transparent electrode layer, wherein the barrier layer is formed by sputtering under an oxidizing atmosphere using the Cu alloy sputtering target.

    摘要翻译： 该Cu合金溅射靶的原子百分比：Al：1〜10％ Ca：0.1〜2％，余量为Cu和1％以下不可避免的杂质。 该薄膜晶体管包括：通过粘合层接合到玻璃基板的表面的栅电极层; 栅极绝缘层; Si半导体层; n型Si半导体层; 阻挡层; 由漏极电极层和源电极层构成的导线层，两者都相互分开; 钝化层; 以及透明电极层，其中通过使用Cu合金溅射靶在氧化气氛下通过溅射形成阻挡层。

    COPPER ALLOY FOR ELECTRONIC DEVICE, METHOD OF PRODUCING COPPER ALLOY FOR ELECTRONIC DEVICE, AND COPPER ALLOY ROLLED MATERIAL FOR ELECTRONIC DEVICE
    8.
    发明申请
    COPPER ALLOY FOR ELECTRONIC DEVICE, METHOD OF PRODUCING COPPER ALLOY FOR ELECTRONIC DEVICE, AND COPPER ALLOY ROLLED MATERIAL FOR ELECTRONIC DEVICE 审中-公开
    用于电子器件的铜合金，用于电子器件的铜合金的制造方法和用于电子器件的铜合金材料

    公开(公告)号：US20130284327A1

    公开(公告)日：2013-10-31

    申请号：US13990939

    申请日：2011-11-24

    申请人： Kazunari Maki ,  Yuki Ito

    发明人： Kazunari Maki ,  Yuki Ito

    IPC分类号： H01B1/02 ,  H01B13/00

    CPC分类号： H01B1/026 ,  C22C9/01 ,  C22F1/08 ,  H01B13/0016

    摘要： A copper alloy for an electric device contains Mg in a range of 1.3 atomic % or more and less than 2.6 atomic %, Al in a range of 6.7 atomic % or more and 20 atomic % or less, and the balance substantially consisting of Cu and unavoidable impurities. A method of producing a copper alloy includes: performing heating of a copper material to a temperature of not lower than 500° C. and not higher than 1000° C.; performing quenching to cool the heated copper material to 200° C. or lower with a cooling rate of 200° C./min or more; and performing working of the cooled copper material, wherein the copper material is composed of a copper alloy containing Mg in a range of 1.3 atomic % or more and less than 2.6 atomic %, Al in a range of 6.7 atomic % or more and 20 atomic % or less.

    摘要翻译： 一种电气装置用铜合金，含有1.3原子％以上且小于2.6原子％的Mg，在6.7原子％以上且20原子％以下的Al，余量基本上由Cu和 不可避免的杂质。 铜合金的制造方法包括：将铜材加热至不低于500℃且不高于1000℃的温度; 进行淬火以将加热的铜材料以200℃/分钟以上的冷却速度冷却至200℃以下; 并且对所述被冷却的铜材进行加工，其中所述铜材料由含有1.3原子％以上且小于2.6原子％的Mg的铜合金构成，所述Al为6.7原子％以上且20原子 ％ 或更少。

    COPPER ALLOY WIRE AND COPPER ALLOY WIRE MANUFACTURING METHOD
    10.
    发明申请
    COPPER ALLOY WIRE AND COPPER ALLOY WIRE MANUFACTURING METHOD 审中-公开
    铜合金线和铜合金线制造方法

    公开(公告)号：US20150187452A1

    公开(公告)日：2015-07-02

    申请号：US14413107

    申请日：2012-07-31

    申请人： Hitoshi Nakamoto ,  Norikazu Ishida ,  Kazunari Maki ,  Hiroyuki Mori ,  Tetsuya Ashida

    发明人： Hitoshi Nakamoto ,  Norikazu Ishida ,  Kazunari Maki ,  Hiroyuki Mori ,  Tetsuya Ashida

    IPC分类号： H01B1/02 ,  C22C9/06 ,  C22F1/08

    CPC分类号： H01B1/026 ,  C22C9/02 ,  C22C9/06 ,  C22F1/08

    摘要： This copper alloy wire consists of a precipitation strengthening type copper alloy containing Co, P, and Sn, wherein an average grain size of precipitates observed through cross-sectional structure observation immediately after performing an intermediate aging heat treatment is equal to or less than 15 nm and a number of precipitates having grain sizes of equal to or less than 5 nm is 10% or higher of a total number of observed precipitates, and the copper alloy wire is subjected to cold working and a final aging heat treatment after the intermediate aging heat treatment.

    摘要翻译： 该铜合金线由含有Co，P和Sn的析出强化型铜合金构成，其中通过在进行中间时效热处理后立即观察到的通过截面结构观察观察到的析出物的平均粒径等于或小于15nm 晶粒尺寸等于或小于5nm的许多沉淀物是观察到的析出物总数的10％以上，并且在中间老化热后对铜合金丝进行冷加工和最终时效热处理 治疗。