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公开(公告)号：US5587655A
公开(公告)日：1996-12-24
申请号：US514208
申请日：1995-08-11
CPC分类号： G05F3/262 , Y10S323/907
摘要： A constant current circuit of the invention supplies a constant current to a load. The constant current circuit is formed of a current source device for providing an input current having a predetermined value with temperature dependence, a voltage divider device connected to the current source device, and an output transistor device. A reference transistor device or an adjusting transistor device is attached to the current source device. In case the reference transistor device is used, the voltage divider device divides a reference voltage of the reference transistor device to thereby generate a control voltage. In case the adjusting transistor device is used, an adjusting voltage from the voltage divider device is supplied to the adjusting transistor device to generate a control voltage. The output transistor device is connected to the load for controlling an output current supplied to the load in response to the control voltage. Temperature dependence of the output current is adjusted by setting voltage dividing ratio of the voltage divider device.
摘要翻译： 本发明的恒流电路向负载提供恒定电流。 恒流电路由电流源装置形成，用于提供具有温度依赖性的预定值的输入电流，连接到电流源装置的分压器件和输出晶体管器件。 参考晶体管器件或调节晶体管器件附接到电流源器件。 在使用参考晶体管器件的情况下，分压器器件分割参考晶体管器件的参考电压，从而产生控制电压。 在使用调节晶体管器件的情况下，来自分压器件的调节电压被提供给调节晶体管器件以产生控制电压。 输出晶体管器件连接到负载，用于响应于控制电压控制提供给负载的输出电流。 通过设定分压器的分压比来调节输出电流的温度依赖性。
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公开(公告)号：US5621601A
公开(公告)日：1997-04-15
申请号：US314320
申请日：1994-09-28
申请人： Tatsuhiko Fujihira , Shin Kiuchi , Kazuhiko Yoshida , Yukio Yano , Kazunori Oyabe , Shoichi Furuhata , Tetsuhiro Morimoto
发明人： Tatsuhiko Fujihira , Shin Kiuchi , Kazuhiko Yoshida , Yukio Yano , Kazunori Oyabe , Shoichi Furuhata , Tetsuhiro Morimoto
CPC分类号： H03K17/0822 , H01L27/0248 , H03F1/52 , H03K17/0828
摘要： The disclosed invention is designed to prevent the oscillation which often occurs in an over-current protection apparatus for an insulated gate controlled transistor. The apparatus improves the response in current detection, to prevent oscillation, and improves protection speed against over-current. This is accomplished by separating the gates of the main transistor and the current detector transistor; by setting a shorter time constant for the gate circuit of the current detector transistor than that of the gate circuit of the main transistor; by feeding the detection signal obtained from the current detecting means which detects the current i of the current detector transistor proportional to the current I flowing through the main transistor, to the control means; and by controlling the gate potentials of both transistors to protect the main transistor from the over-current by feeding the comparison output Sd from the comparator circuit, which compares the voltage of the signal Vd with the reference voltage Vr, to the control circuit.
摘要翻译： 所公开的发明被设计为防止在绝缘栅极控制晶体管的过电流保护装置中经常发生的振荡。 该装置提高了电流检测中的响应，防止振荡，提高了防过电流的保护速度。 这通过分离主晶体管和电流检测器晶体管的栅极来实现; 通过为电流检测器晶体管的栅极电路设置比主晶体管的栅极电路的时间常数更短的时间常数; 通过将检测到与流过主晶体管的电流I成比例的电流检测器晶体管的电流i的电流检测装置获得的检测信号馈送到控制装置; 并且通过控制两个晶体管的栅极电位，通过将比较电路的比较输出Sd与信号Vd与参考电压Vr进行比较来控制主晶体管的过电流来保护主晶体管。
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3.发明授权Gate drive circuit having reduced current-consumption and rapid inductive energy dissipation 失效栅极驱动电路具有降低的电流消耗和快速的感应能量耗散
公开(公告)号：US5811996A
公开(公告)日：1998-09-22
申请号：US767952
申请日：1996-12-17
IPC分类号： H03K17/08 , H03K17/00 , H03K17/082 , H03K17/695 , H03K3/00
CPC分类号： H03K17/0822 , H03K17/0828 , H03K2217/0036
摘要： A gate drive circuit device for a voltage-driven semiconductor element reduces the time to dissipate inductively stored electromagnetic energy and reduces current consumption by using cyclically charged capacitative storage to produce a control signal that is about twice the supply voltage. This permits full-ON dissipation of the stored energy after the circuit cuts off power to the inductive element. In one embodiment, the dissipation is chiefly in a voltage-regulator diode connected to limit the voltage appearing across a transistor. In another embodiment, a voltage regulator diode permits a transistor to operate in the full-on condition, while limiting the voltage across it to a value below its withstand voltage, whereby a maximum power dissipation current flows in the transistor. In a further embodiment a gate drive signal generator eliminates a voltage regulator diode from the conventional gate drive circuit device. Instead, this embodiment substitutes switching devices both on the power supply side and the reference potential (ground) side. Both switching devices include a switch and an operating section that controls switching operation. The two operating sections receive an externally generated command signal for timing the ON/OFF operation of the switches. The control technique permits both the switching and operating sections to be fabricated integrally as an integrated circuit.
摘要翻译： 用于电压驱动的半导体元件的栅极驱动电路器件通过使用循环充电的电容存储来减少耗散感应存储的电磁能量并减少电流消耗的时间，以产生大约是电源电压的两倍的控制信号。 这在电路断开电感元件的电源之后，允许存储能量的全功耗。 在一个实施例中，耗散主要在连接的电压调节器二极管中以限制出现在晶体管两端的电压。 在另一个实施例中，电压调节器二极管允许晶体管在全开状态下工作，同时将其两端的电压限制在低于其耐受电压的值，由此在晶体管中流过最大功耗电流。 在另一实施例中，栅极驱动信号发生器从传统的栅极驱动电路器件中消除了稳压二极管。 相反，该实施例将电源侧和参考电位（接地）侧的开关器件替代。 两个开关装置包括开关和控制开关操作的操作部分。 两个操作部分接收外部产生的命令信号以定时开关的ON / OFF操作。 控制技术允许开关和操作部分作为集成电路整体制造。
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公开(公告)号：US06404659B1
公开(公告)日：2002-06-11
申请号：US09692737
申请日：2000-10-19
申请人： Kazunori Oyabe
发明人： Kazunori Oyabe
IPC分类号： H02M75387
摘要： When an alarm signal provided by an inverter forming an I/F provided for the circuit on the high side enters an active (L) state, the output of the inverter indicates an H state. Then, the N-channel MOS type FET enters an ON state. At this time, the N-channel MOS type FET is connected to the I/F on the low side using a diode. Therefore, when the diode enters a normal bias state, that is, when the reference potential of the above mentioned two I/Fs approach each other, an electric current flows from the power supply to the N-channel MOS type FET through a resistor. As a result, by a voltage drop, a voltage arises in the resistor, and the output of the inverter indicates the H state. Since the output of the inverter is connected to a control unit, the control unit performs a process according to an alarm signal. Thus, the electric power conversion apparatus having a circuit on a low side for performing a switching operation based on reference potential and a circuit on a high side for performing a switching operation based on floating reference potential which is different from the reference potential by a variable amount can be smaller and less costly.
摘要翻译： 当由形成高电平电路的I / F的逆变器提供的报警信号进入有效（L）状态时，逆变器的输出表示H状态。 然后，N沟道MOS型FET进入导通状态。 此时，N沟道MOS型FET利用二极管与低压侧的I / F连接。 因此，当二极管进入正常偏置状态时，也就是说，当上述两个I / F的基准电位相互接近时，电流通过电阻从电源流向N沟道MOS型FET。 结果，通过电压降，电阻器产生电压，逆变器的输出表示H状态。 由于逆变器的输出连接到控制单元，所以控制单元根据报警信号执行处理。 因此，具有基于参考电位进行开关动作的低侧的电路的电力转换装置和基于参考电位不同的浮动基准电位进行开关动作的高侧电路 数量可以更小，成本更低。
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公开(公告)号：US07507023B2
公开(公告)日：2009-03-24
申请号：US11404095
申请日：2006-04-14
IPC分类号： G01K7/00
CPC分类号： H01L29/7395 , G01K7/015 , G01K7/425 , H01L24/05 , H01L29/0692 , H01L29/861 , H01L2924/12036 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： A temperature measurement device of a power semiconductor device includes a plurality of temperature detecting diodes formed on a first chip having a power semiconductor device; and a detection circuit that is formed on a second chip having an integrated circuit that controls the power semiconductor device and is connected to the temperature detecting diodes; wherein the detection circuit detects a temperature of the power semiconductor device based on a difference between the forward voltages of the temperature detecting diodes when different values of current flow to the respective temperature detecting diodes.
摘要翻译： 功率半导体器件的温度测量装置包括形成在具有功率半导体器件的第一芯片上的多个温度检测二极管; 以及检测电路，形成在具有控制功率半导体器件并连接到温度检测二极管的集成电路的第二芯片上; 其中，当不同的电流流向相应的温度检测二极管时，检测电路基于温度检测二极管的正向电压之间的差异来检测功率半导体器件的温度。
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公开(公告)号：US06934139B2
公开(公告)日：2005-08-23
申请号：US09845787
申请日：2001-05-01
申请人： Naoki Kumagai , Kazunori Oyabe , Naotaka Matsuda
发明人： Naoki Kumagai , Kazunori Oyabe , Naotaka Matsuda
CPC分类号： H02M1/32 , H02H7/1225 , H03K17/0828 , H03K17/18 , H03K2017/0806
摘要： An intelligent power module includes semiconductor switching devices, drive circuits, a variety of detecting circuits and warning circuits for detecting a fatal abnormal condition and a precursory abnormal condition thereof in the switching devices, the drive circuits and so forth, abnormal condition detecting logic devices and drive circuits for protecting the switching devices when the detecting circuits and the warning circuits detect the abnormal condition, and control circuits and a transmission circuit for outputting a signal based on detection of the abnormal condition. The transmission circuit has an output terminal for outputting alarm signals when the fatal abnormal condition is detected, and an output terminal for outputting abnormality factor discrimination signals indicating abnormality factors contributing to the fatal abnormal condition and the precursory abnormal condition.
摘要翻译： 智能电源模块包括半导体开关装置，驱动电路，各种检测电路和用于检测开关装置，驱动电路等中的致命异常状况及其前兆异常的警告电路，异常状态检测逻辑装置和 用于在检测电路和警告电路检测到异常状况时保护开关装置的驱动电路，以及用于基于异常状况的检测输出信号的控制电路和发送电路。 发送电路具有用于当检测到致命异常状况时输出报警信号的输出端子，以及用于输出表示造成致命异常状态和前兆异常状态的异常因素的异常因子识别信号的输出端子。
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公开(公告)号：US07773400B2
公开(公告)日：2010-08-10
申请号：US11845237
申请日：2007-08-27
申请人： Akira Nakamori , Kazunori Oyabe , Manabu Watanabe
发明人： Akira Nakamori , Kazunori Oyabe , Manabu Watanabe
IPC分类号： H02M7/5387
CPC分类号： H02M5/458 , H02M1/08 , H03K17/28 , H03K17/567 , H03K17/6877
摘要： A phase adjusting circuit is provided that is capable of adjusting a delay time at a rise or fall of a driving signal for driving an inverter. A phase adjusting circuit is provided upstream of a driver circuit, and an output from a hysteresis comparator is input to the driver circuit through the phase adjusting circuit. The phase adjusting circuit delays at least either rise or fall of the signal input to the driver circuit to adjust any difference between the pulse width of the input signal input to the driver circuit and the pulse width of a signal output from a switching element of an inverter driven by the driver circuit.
摘要翻译： 提供了一种相位调整电路，其能够调节用于驱动逆变器的驱动信号的上升或下降的延迟时间。 在驱动电路的上游设置相位调整电路，通过相位调整电路将来自迟滞比较器的输出输入到驱动电路。 相位调整电路至少延迟输入到驱动器电路的信号的上升或下降，以调整输入到驱动电路的输入信号的脉冲宽度与从开关元件输出的信号的脉冲宽度之间的差值 变频器由驱动电路驱动。
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公开(公告)号：US07592853B2
公开(公告)日：2009-09-22
申请号：US11847885
申请日：2007-08-30
申请人： Akira Nakamori , Kazunori Oyabe
发明人： Akira Nakamori , Kazunori Oyabe
IPC分类号： H03K17/687
CPC分类号： H03K17/567 , H03K17/168 , H03K2017/0806 , H03K2217/0036
摘要： A drive circuit for an insulated gate device includes a constant current source generating a constant current, and a switching circuit, wherein a gate of the insulated gate device is connected to a power supply potential side via the constant current source at the time of turn-on and to a ground potential side at the time of turn-off. Whereby a drive circuit for the insulated gate device can be reduced loss at the time of turn-on and reduced temperature dependency of noise.
摘要翻译： 一种用于绝缘栅极器件的驱动电路包括产生恒定电流的恒流源和开关电路，其中绝缘栅极器件的栅极在转向时经由恒流源连接到电源电位侧， 在关闭时在接地电位侧。 因此，用于绝缘栅极器件的驱动电路可以在导通时降低损耗并降低噪声的温度依赖性。
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公开(公告)号：US20060255361A1
公开(公告)日：2006-11-16
申请号：US11404095
申请日：2006-04-14
IPC分类号： H01L29/74
CPC分类号： H01L29/7395 , G01K7/015 , G01K7/425 , H01L24/05 , H01L29/0692 , H01L29/861 , H01L2924/12036 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： A temperature measurement device of a power semiconductor device includes a plurality of temperature detecting diodes formed on a first chip having a power semiconductor device; and a detection circuit that is formed on a second chip having an integrated circuit that controls the power semiconductor device and is connected to the temperature detecting diodes; wherein the detection circuit detects a temperature of the power semiconductor device based on a difference between the forward voltages of the temperature detecting diodes when different values of current flow to the respective temperature detecting diodes.
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