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    Filter and manufacturing method thereof
    3.
    发明授权
    Filter and manufacturing method thereof 失效
    过滤器及其制造方法

    公开(公告)号：US06743270B2

    公开(公告)日：2004-06-01

    申请号：US10014557

    申请日：2001-12-14

    申请人： Kouichi Oda ,  Minoru Honda ,  Takanari Takagaki

    发明人： Kouichi Oda ,  Minoru Honda ,  Takanari Takagaki

    IPC分类号： B01D4602

    CPC分类号： B01D46/0001 ,  B01D46/02 ,  B01D2265/06 ,  B01D2275/201 ,  B01D2279/60 ,  F02M35/024 ,  Y10S55/05

    摘要： A filter portion of a filter includes a plurality of bag-like members. The bag-like members are formed in a container shape having an opening and disposed with intervals therebetween. The periphery of the opening of each bag-like member is supported by a supporting member, and the bag-like members are mutually connected by the supporting member. Consequently, the strength of the filter portion comprising the bag-like members is improved.

    摘要翻译： 过滤器的过滤器部分包括多个袋状构件。 袋状构件形成为具有开口并且间隔开的间隔的容器形状。 每个袋状构件的开口的周边由支撑构件支撑，并且袋状构件通过支撑构件相互连接。 因此，包括袋状部件的过滤部分的强度提高。

    Filter medium and production method thereof
    4.
    发明授权
    Filter medium and production method thereof 失效
    过滤介质及其制备方法

    公开(公告)号：US06454827B2

    公开(公告)日：2002-09-24

    申请号：US09842708

    申请日：2001-04-27

    申请人： Takanari Takagaki ,  Kouichi Oda ,  Minoru Honda

    发明人： Takanari Takagaki ,  Kouichi Oda ,  Minoru Honda

    IPC分类号： B01D3916

    CPC分类号： B01D46/521 ,  B01D46/0001 ,  B01D46/0036 ,  B01D46/10 ,  B01D53/02 ,  B01D2253/102 ,  B01D2257/702 ,  B01D2258/01 ,  B01D2259/4516 ,  B01D2259/4566 ,  B01D2275/10 ,  B01D2279/60 ,  Y10S55/05

    摘要： A filter medium has a function member accommodated between two fiber layers. A production method for manufacturing a filter medium includes the steps of: preparing a first fiber layer having a shape identical to that of a side surface of the filter medium; disposing a function member on a surface of the first fiber layer; and forming a second fiber layer by spinning partially melted fibers onto the function member disposed on the surface of the first fiber layer. Therefore, it is unnecessary to carry out press-forming in a state in which the function member is sandwiched between nonwoven fabrics, and a countermeasure to prevent the function member from falling out and a countermeasure to prevent the nonwoven fabric from being torn by the function member are unnecessary.

    摘要翻译： 过滤介质具有容纳在两个纤维层之间的功能件。 用于制造过滤介质的制造方法包括以下步骤：制备具有与过滤介质的侧面相同形状的第一纤维层; 在第一纤维层的表面上设置功能部件; 以及通过将部分熔融的纤维旋转到设置在第一纤维层的表面上的功能件上来形成第二纤维层。 因此，不需要在功能部件夹在无纺布之间的状态下进行冲压成形，并且防止功能部件脱落的对策和防止无纺布被功能撕裂的对策 会员是不必要的

    Double-chamber container and method for manufacturing same
    5.
    发明授权
    Double-chamber container and method for manufacturing same 有权
    双室容器及其制造方法

    公开(公告)号：US09278049B2

    公开(公告)日：2016-03-08

    申请号：US14002050

    申请日：2012-02-28

    申请人： Minoru Honda

    发明人： Minoru Honda

    IPC分类号： B65D25/08 ,  A61J1/00 ,  A61J1/10 ,  A61J1/20 ,  B29C65/76 ,  B29C65/00 ,  B29C65/02 ,  B65D81/32 ,  B29L31/00

    CPC分类号： A61J1/00 ,  A61J1/10 ,  A61J1/2024 ,  A61J1/2093 ,  B29C65/02 ,  B29C65/76 ,  B29C66/004 ,  B29C66/1122 ,  B29C66/3472 ,  B29C66/43 ,  B29C66/53262 ,  B29C66/71 ,  B29C66/72321 ,  B29C66/7234 ,  B29C66/8322 ,  B29C66/91411 ,  B29C66/919 ,  B29L2031/7148 ,  B65D81/3266 ,  B29K2023/0625 ,  B29K2023/0633 ,  B29K2023/12 ,  B29K2067/003

    摘要： There is provided a method for manufacturing a double-chamber container including an agent storage chamber and a solution storage chamber separated from each other by a weak seal portion, the method including the steps of: preparing a first sheet-like member including a first agent storage chamber forming portion and a first solution storage chamber forming portion whose one sides are joined to each other, as well as a second sheet-like member including a second agent storage chamber forming portion and a second solution storage chamber forming portion whose one sides are joined to each other; and forming the agent storage chamber and the solution storage chamber by joining the first and the second sheet-like members. The weak seal portion is formed by joining the one side of the first medical solution storage chamber forming portion and the one side of the second medical solution storage chamber forming portion.

    摘要翻译： 提供了一种用于制造双室容器的方法，所述双室容器包括通过弱密封部彼此分离的试剂储存室和溶液储存室，所述方法包括以下步骤：制备包括第一试剂的第一片状构件 存储室形成部分和一侧彼此接合的第一溶液储存室形成部分，以及包括第二药剂储存室形成部分和第二溶液储存室形成部分的第二片状部件， 相互联系 以及通过接合所述第一和第二片状构件形成所述试剂储存室和所述溶液储存室。 弱密封部分通过将第一药液存储室形成部分的一侧和第二药液存储室形成部分的一侧接合而形成。

    SILICON NITRIDE FILM AND PROCESS FOR PRODUCTION THEREOF, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE
    6.
    发明申请
    SILICON NITRIDE FILM AND PROCESS FOR PRODUCTION THEREOF, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE 审中-公开
    硅氮化硅膜及其制造方法，计算机可读存储介质和等离子体CVD装置

    公开(公告)号：US20120153442A1

    公开(公告)日：2012-06-21

    申请号：US13164337

    申请日：2011-06-20

    申请人： Minoru Honda ,  Masayuki Kohno

    发明人： Minoru Honda ,  Masayuki Kohno

    IPC分类号： H01L23/58 ,  C23C16/511 ,  H01L21/318

    CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/511 ,  H01L21/02274 ,  H01L21/31111 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided is a process of forming a silicon nitride film having concentration of hydrogen atoms below or equal to 9.9×1020 atoms/cm3 in the silicon nitride film by using a plasma CVD device, which generates plasma by introducing microwaves into a process chamber by using a planar antenna having a plurality of apertures, by setting the pressure inside a process chamber within a range from 0.1 Pa to 6.7 Pa and by performing a plasma CVD by using a raw material gas for film formation including SiCl4 gas and nitrogen gas.

    摘要翻译： 提供了通过使用等离子体CVD装置在氮化硅膜中形成低于或等于9.9×1020原子/ cm3的氢原子浓度的氮化硅膜的工艺，该等离子体CVD装置通过使用等离子体CVD装置将微波引入处理室来产生等离子体 通过将处理室内的压力设定在0.1Pa〜6.7Pa的范围内，通过使用包含SiCl 4气体和氮气的成膜原料气体进行等离子体CVD，具有多个孔的平面天线。

    METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    7.
    发明申请
    METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
    形成绝缘膜的方法和制造半导体器件的方法

    公开(公告)号：US20100323531A1

    公开(公告)日：2010-12-23

    申请号：US12521666

    申请日：2007-12-20

    申请人： Minoru Honda ,  Yoshihiro Sato ,  Toshio Nakanishi

    发明人： Minoru Honda ,  Yoshihiro Sato ,  Toshio Nakanishi

    IPC分类号： H01L21/314

    CPC分类号： H01L21/28202 ,  H01L21/67109 ,  H01L21/67115

    摘要： A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface, a step of performing oxidizing to the silicon on the surface, and forming a silicon oxide thin film on the surface of the silicon, a step of performing first nitriding to the silicon oxide film and the base silicon thereof, and forming a silicon oxynitride film, and a step of performing first heat treatment to the silicon oxynitride film in N2O atmosphere. In such method, a step of performing second nitriding to the silicon oxynitride film may be further included after the first heat treatment, and furthermore, a step of performing second heat treatment to the silicon oxynitride film after the second nitriding may be included.

    摘要翻译： 一种形成绝缘膜的方法包括制备待加工的基板并且在表面上露出硅的步骤，对表面上的硅进行氧化并在表面上形成氧化硅薄膜的步骤 的硅，对氧化硅膜及其基底硅进行氮化的步骤，形成氮氧化硅膜，以及在N 2 O气氛中对氮氧化硅膜进行热处理的工序。 在这种方法中，可以在第一热处理之后进一步包括对氮氧化硅膜进行第二氮化的步骤，此外，可以包括在第二次氮化之后对氮氧化硅膜进行第二次热处理的步骤。

    Power supply circuit
    8.
    发明授权
    Power supply circuit 有权
    电源电路

    公开(公告)号：US07772813B2

    公开(公告)日：2010-08-10

    申请号：US11639280

    申请日：2006-12-15

    申请人： Tomokazu Kojima ,  Minoru Honda

    发明人： Tomokazu Kojima ,  Minoru Honda

    IPC分类号： G05F1/00

    CPC分类号： H03F3/45475 ,  H03F1/56 ,  H03F2203/45674

    摘要： An operational amplifier generates a power supply potential from a reference potential. An impedance adjuster adjusts an output impedance of the operational amplifier in accordance with a control signal. A charge accumulator accumulates an output charge of the operational amplifier whose impedance is adjusted by the impedance adjuster. A comparator compares an output voltage of the operational amplifier before the impedance adjustment by the impedance adjuster and the output voltage of the operational amplifier after the impedance adjustment by the impedance adjuster to each other, and the comparator further generates the control signal in accordance with a result of the comparison so as to output the generated control signal to the impedance adjuster.

    摘要翻译： 运算放大器从参考电位产生电源电位。 阻抗调节器根据控制信号调整运算放大器的输出阻抗。 电荷累加器累积运算放大器的输出电荷，其阻抗由阻抗调节器调节。 比较器在通过阻抗调节器进行的阻抗调整之后，将由阻抗调节器进行的阻抗调整之前的运算放大器的输出电压与运算放大器的输出电压进行比较，并且比较器进一步根据 比较结果，将所生成的控制信号输出到阻抗调节器。

    METHOD FOR NITRIDING SUBSTRATE AND METHOD FOR FORMING INSULATING FILM
    9.
    发明申请
    METHOD FOR NITRIDING SUBSTRATE AND METHOD FOR FORMING INSULATING FILM 失效
    氮化衬底的方法和形成绝缘膜的方法

    公开(公告)号：US20090269940A1

    公开(公告)日：2009-10-29

    申请号：US11910354

    申请日：2006-03-28

    申请人： Minoru Honda ,  Toshio Nakanishi

    发明人： Minoru Honda ,  Toshio Nakanishi

    IPC分类号： H01L21/318 ,  C23C16/513

    CPC分类号： H01L21/28202 ,  H01J2237/3387 ,  H01L21/3185 ,  H01L21/3211 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In a substrate nitriding method for nitriding a target substrate by allowing a nitrogen-containing plasma to act on silicon on a surface of the substrate in a processing chamber of a plasma processing apparatus, the nitridation by the nitrogen-containing plasma is performed by controlling a sheath voltage Vdc around the substrate to be less than or equal to about 3.5 eV. The sheath voltage Vdc is a potential difference Vp−Vf between a plasma potential Vp in a plasma generating region and a floating potential Vf of the substrate.

    摘要翻译： 在等离子体处理装置的处理室中，通过使含氮等离子体在基板的表面上的硅上作用于氮化等离子体的基板氮化方法中，通过控制含氮等离子体的氮化， 基板周围的护套电压Vdc小于或等于约3.5eV。 鞘电压Vdc是等离子体产生区域中的等离子体电位Vp与衬底的浮置电位Vf之间的电位差Vp-Vf。