公开(公告)号：US20050215077A1

公开(公告)日：2005-09-29

申请号：US11028864

申请日：2005-01-05

申请人： Kazuo Takeda ,  Takeshi Sato ,  Jun Gotoh ,  Masakazu Saitou ,  Daisuke Mutou

发明人： Kazuo Takeda ,  Takeshi Sato ,  Jun Gotoh ,  Masakazu Saitou ,  Daisuke Mutou

IPC分类号： G02F1/1368 ,  G02F1/133 ,  G09F9/30 ,  G09G3/36 ,  G09G3/38 ,  H01L21/00 ,  H01L21/20 ,  H01L21/26 ,  H01L21/263 ,  H01L21/268 ,  H01L21/336 ,  H01L21/42 ,  H01L21/77 ,  H01L27/32 ,  H01L29/786

CPC分类号： H01L27/1285 ,  H01L27/1296 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78675

摘要： The generation of a projecting intensity distribution in an irradiation laser beam used for forming a polycrystalline semiconductor film is prevented by irradiating the laser beam onto an amorphous semiconductor film to crystallize it while it is being scanned. A dog-ear removing filter for eliminating diffracted light that occurs at boundaries of lenses and acts as a cause of development of dog-ears in the light intensity distribution is disposed in an optical system to cause the light intensity distribution in the irradiation laser beam to be uniform. As a result, by removing the dog ear distributions, the necessity for making the light intensity distribution of the laser beam blur is eliminated, and, consequently, a distribution of high energy efficiency can be maintained and the throughput is improved.

摘要翻译： 用于形成多晶半导体膜的照射激光束中的突出强度分布的产生通过将激光束照射到非晶半导体膜上而在被扫描时使其结晶化而被防止。 用于消除在透镜边界处发生的衍射光并且作为光强度分布中的狗耳发展的原因的狗耳去除滤光器被设置在光学系统中，以使照射激光束中的光强度分布 统一 结果，通过去除狗耳分布，消除了激光束模糊的光强度分布的必要性，从而可以保持高能量效率的分布并提高吞吐量。

公开(公告)号：US20060279744A1

公开(公告)日：2006-12-14

申请号：US11407905

申请日：2006-04-21

申请人： Kazuo Takeda ,  Jun Gotoh ,  Daisuke Mutou

发明人： Kazuo Takeda ,  Jun Gotoh ,  Daisuke Mutou

IPC分类号： G01B11/02

CPC分类号： G01B11/0683 ,  G01B11/0633

摘要： A laser light is projected to a thin film deposited on a transparent substrate, and measurement is performed on the entire measurement area of the substrate, and transmission intensity is measured by a transmission light intensity monitor and reflection light intensity is measured by a reflection light intensity monitor at the same points and at the same number of points on the substrate. From the value of “A=1−(R+T)” where R represents reflectivity and T is transmissivity, film thickness is measured and evaluated from the relation of the value A with film thickness. By this procedure, film thickness can be determined on 10,000 substrates or more per minute and film thickness of thin film can be measured over the entire substrate surface.

公开(公告)号：US07542152B2

公开(公告)日：2009-06-02

申请号：US11407905

申请日：2006-04-21

申请人： Kazuo Takeda ,  Jun Gotoh ,  Daisuke Mutou

发明人： Kazuo Takeda ,  Jun Gotoh ,  Daisuke Mutou

IPC分类号： G01B11/06

CPC分类号： G01B11/0683 ,  G01B11/0633

摘要： A laser light is projected to a thin film deposited on a transparent substrate, and measurement is performed on the entire measurement area of the substrate, and transmission intensity is measured by a transmission light intensity monitor and reflection light intensity is measured by a reflection light intensity monitor at the same points and at the same number of points on the substrate. From the value of “A=1−(R+T)” where R represents reflectivity and T is transmissivity, film thickness is measured and evaluated from the relation of the value A with film thickness. By this procedure, film thickness can be determined on 10,000 substrates or more per minute and film thickness of thin film can be measured over the entire substrate surface.

摘要翻译： 将激光投射到沉积在透明基板上的薄膜上，并且对基板的整个测量区域进行测量，并且透射光强度监测器测量透射强度，并且通过反射光强度 在基板上的相同点和相同数量的点处进行监视。 从“A = 1-（R + T）”的值，其中R表示反射率，T表示透射率，根据值A与膜厚度的关系来测量和评价膜厚度。 通过该程序，可以在10,000个基板以上每分钟测定膜厚度，并且可以在整个基板表面上测量薄膜的膜厚度。

公开(公告)号：US20060254497A1

公开(公告)日：2006-11-16

申请号：US11449664

申请日：2006-06-09

申请人： Kazuo Takeda ,  Takeshi Sato ,  Masakazu Saito ,  Jun Gotoh

发明人： Kazuo Takeda ,  Takeshi Sato ,  Masakazu Saito ,  Jun Gotoh

IPC分类号： C30B5/00

CPC分类号： H01L21/02686 ,  B23K26/066 ,  B23K26/0738 ,  H01L21/02678 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675

摘要： A surface roughness of a polycrystalline semiconductor film to be formed by a laser annealing method is reduced. A transmittance distribution filter is disposed at the optical system of a laser annealing apparatus. The transmittance distribution filter controls an irradiation light intensity distribution along a scanning direction of a substrate formed with an amorphous silicon semiconductor thin film to have a distribution having an energy part equal to or higher than a fine crystal threshold on a high energy light intensity side and an energy part for melting and combining only a surface layer. This transmittance distribution filter is applied to an excimer laser annealing method, a phase shift stripe method or an SLS method respectively using a general line beam to thereby reduce the height of protrusions on a polycrystalline surface.

公开(公告)号：US07151046B2

公开(公告)日：2006-12-19

申请号：US10900365

申请日：2004-07-28

申请人： Kazuo Takeda ,  Takeshi Sato ,  Masakazu Saito ,  Jun Gotoh

发明人： Kazuo Takeda ,  Takeshi Sato ,  Masakazu Saito ,  Jun Gotoh

IPC分类号： H01L21/20

CPC分类号： H01L21/02686 ,  B23K26/066 ,  B23K26/0738 ,  H01L21/02678 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675

摘要： A surface roughness of a polycrystalline semiconductor film to be formed by a laser annealing method is reduced. A transmittance distribution filter is disposed at the optical system of a laser annealing apparatus. The transmittance distribution filter controls an irradiation light intensity distribution along a scanning direction of a substrate formed with an amorphous silicon semiconductor thin film to have a distribution having an energy part equal to or higher than a fine crystal threshold on a high energy light intensity side and an energy part for melting and combining only a surface layer. This transmittance distribution filter is applied to an excimer laser annealing method, a phase shift stripe method or an SLS method respectively using a general line beam to thereby reduce the height of protrusions on a polycrystalline surface.

摘要翻译： 通过激光退火法形成的多晶半导体膜的表面粗糙度降低。 透射率分布滤光器设置在激光退火装置的光学系统中。 透射率分布滤光器控制沿着形成有非晶硅半导体薄膜的基板的扫描方向的照射光强度分布，以具有在高能量光强度侧具有等于或高于精细晶体阈值的能量分布的分布，以及 用于熔化和组合仅表面层的能量部分。 该透射率分布滤波器分别应用于准分子激光退火方法，相移条纹法或SLS法，使用通用线束，从而降低多晶表面上的突起的高度。

公开(公告)号：US20050139830A1

公开(公告)日：2005-06-30

申请号：US10900365

申请日：2004-07-28

申请人： Kazuo Takeda ,  Takeshi Sato ,  Masakazu Saito ,  Jun Gotoh

发明人： Kazuo Takeda ,  Takeshi Sato ,  Masakazu Saito ,  Jun Gotoh

IPC分类号： G02F1/1368 ,  B23K26/06 ,  B23K26/073 ,  H01L21/20 ,  H01L21/268 ,  H01L21/324 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/786 ,  H01L29/10

CPC分类号： H01L21/02686 ,  B23K26/066 ,  B23K26/0738 ,  H01L21/02678 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675

摘要： A surface roughness of a polycrystalline semiconductor film to be formed by a laser annealing method is reduced. A transmittance distribution filter is disposed at the optical system of a laser annealing apparatus. The transmittance distribution filter controls an irradiation light intensity distribution along a scanning direction of a substrate formed with an amorphous silicon semiconductor thin film to have a distribution having an energy part equal to or higher than a fine crystal threshold on a high energy light intensity side and an energy part for melting and combining only a surface layer. This transmittance distribution filter is applied to an excimer laser annealing method, a phase shift stripe method or an SLS method respectively using a general line beam to thereby reduce the height of protrusions on a polycrystalline surface.

摘要翻译： 通过激光退火法形成的多晶半导体膜的表面粗糙度降低。 透射率分布滤光器设置在激光退火装置的光学系统中。 透射率分布滤光器控制沿着形成有非晶硅半导体薄膜的基板的扫描方向的照射光强度分布，以具有在高能量光强度侧具有等于或高于精细晶体阈值的能量分布的分布，以及 用于熔化和组合仅表面层的能量部分。 该透射率分布滤波器分别应用于准分子激光退火方法，相移条纹法或SLS法，使用通用线束，从而降低多晶表面上的突起的高度。

公开(公告)号：US20050142701A1

公开(公告)日：2005-06-30

申请号：US10891522

申请日：2004-07-15

申请人： Hironaru Yamaguchi ,  Kiyoshi Ogata ,  Takuo Tamura ,  Jun Gotoh ,  Masakazu Saito ,  Kazuo Takeda

发明人： Hironaru Yamaguchi ,  Kiyoshi Ogata ,  Takuo Tamura ,  Jun Gotoh ,  Masakazu Saito ,  Kazuo Takeda

IPC分类号： G02F1/1368 ,  G02F1/136 ,  G02F1/1362 ,  G09F9/30 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L21/00 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L21/02686 ,  G02F1/13454 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film. The grain size distribution of the polysilicon film is measured. An optimum value of energy density of laser beam irradiation is calculated on the basis of grain size values measured at two points A and B of the polysilicon film. Then, the average film thickness of a next amorphous silicon film is measured. A value of energy density of laser beam irradiation is calculated on the basis of the average film thickness of the next amorphous silicon film and the average film thickness of the previous amorphous silicon film. The value of energy density is fed back to a laser beam irradiation system. As described above, the energy density of laser beam irradiation to be applied on a silicon film formed on a substrate is controlled in accordance with the film thickness of the silicon film whenever the film thickness of the silicon film is measured. Accordingly, polysilicon uniform and large in grain size can be formed on the whole surface of a large-size substrate. As a result, polysilicon TFTs can be formed in a large area.

摘要翻译： 测量在基板上形成的非晶硅膜的平均膜厚。 然后，用激光束照射非晶硅膜以形成多晶硅膜。 测量多晶硅膜的晶粒尺寸分布。 基于在多晶硅膜的两点A和B测量的晶粒尺寸值来计算激光束照射的能量密度的最佳值。 然后，测定下一非晶硅膜的平均膜厚。 基于下一非晶硅膜的平均膜厚和先前的非晶硅膜的平均膜厚计算激光束照射的能量密度值。 能量密度的值被反馈到激光束照射系统。 如上所述，每当测量硅膜的膜厚时，根据硅膜的膜厚度来控制施加在形成在基板上的硅膜上的激光束照射的能量密度。 因此，可以在大尺寸基板的整个表面上形成均匀且粒径大的多晶硅。 结果，可以在大面积上形成多晶硅TFT。

公开(公告)号：US07232716B2

公开(公告)日：2007-06-19

申请号：US10891522

申请日：2004-07-15

申请人： Hironaru Yamaguchi ,  Kiyoshi Ogata ,  Takuo Tamura ,  Jun Gotoh ,  Masakazu Saito ,  Kazuo Takeda

发明人： Hironaru Yamaguchi ,  Kiyoshi Ogata ,  Takuo Tamura ,  Jun Gotoh ,  Masakazu Saito ,  Kazuo Takeda

IPC分类号： H01L21/66 ,  H01L21/268

CPC分类号： H01L21/02686 ,  G02F1/13454 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film, and the grain size distribution of the polysilicon film is measured. An optimum value of energy density of laser beam irradiation is calculated on the basis of grain size values measured at two points A and B of the polysilicon film. Then, the average film thickness of an amorphous silicon film formed on a subsequent substrate is measured. A value of energy density of laser beam irradiation for the subsequent amorphous silicon film is calculated on the basis of the two average film thicknesses. Accordingly, a uniform polysilicon film of large grain sizes is formed on the whole surface of a large-size substrate to provide polysilicon TFTs in a large area.

摘要翻译： 测量在基板上形成的非晶硅膜的平均膜厚。 然后，用激光束照射非晶硅膜以形成多晶硅膜，并测量多晶硅膜的晶粒尺寸分布。 基于在多晶硅膜的两点A和B测量的晶粒尺寸值来计算激光束照射的能量密度的最佳值。 然后，测量形成在随后的基板上的非晶硅膜的平均膜厚。 基于两个平均膜厚度计算随后的非晶硅膜的激光束照射的能量密度值。 因此，在大尺寸基板的整个表面上形成均匀的大晶粒尺寸的多晶硅膜，以提供大面积的多晶硅TFT。

公开(公告)号：US08421964B2

公开(公告)日：2013-04-16

申请号：US13557710

申请日：2012-07-25

申请人： Jun Gotoh

发明人： Jun Gotoh

IPC分类号： G02F1/1337 ,  G02F1/1339

CPC分类号： G02F1/1337 ,  G02F1/133514 ,  G02F1/133516 ,  G02F2001/133388 ,  G02F2001/133519

摘要： A liquid crystal display device includes a TFT substrate having a display area in which pixels each wutg a pixel electrode and a TFT are arranged in a matrix form, a counter substrate disposed opposite to the TFT substrate, a sealing material formed in the periphery to bond the TFT substrate and the counter substrate, and a liquid crystal layer interposed between an orientation film formed on the TFT substrate and an orientation film formed on the counter substrate. A first, second or third color filter is formed corresponding to each of the pixels in the display area of the TFT substrate, and an orientation film stopper is formed by an overlapping portion of the first, second or third color filter, outside of the display area. A profile of the orientation film formed on the TFT substrate is defined by the orientation film stopper.

摘要翻译： 一种液晶显示装置，具备：具有显示区域的TFT基板，在该显示区域中，像素电极和TFT排列成矩阵状的像素;与TFT基板相对配置的对置基板，形成在周边的密封材料， TFT基板和对置基板，以及介于形成在TFT基板上的取向膜和形成在对置基板上的取向膜之间的液晶层。 对应于TFT基板的显示区域中的每个像素形成第一，第二或第三滤色器，并且取向膜阻挡件由第一，第二或第三滤色器的重叠部分形成在显示器的外部 区。 在TFT基板上形成的取向膜的轮廓由取向膜止动件限定。

公开(公告)号：US20120287383A1

公开(公告)日：2012-11-15

申请号：US13557710

申请日：2012-07-25

申请人： Jun Gotoh

发明人： Jun Gotoh

IPC分类号： G02F1/1335

CPC分类号： G02F1/1337 ,  G02F1/133514 ,  G02F1/133516 ,  G02F2001/133388 ,  G02F2001/133519

摘要： A liquid crystal display device includes a TFT substrate having a display area in which pixels each wutg a pixel electrode and a TFT are arranged in a matrix form, a counter substrate disposed opposite to the TFT substrate, a sealing material formed in the periphery to bond the TFT substrate and the counter substrate, and a liquid crystal layer interposed between an orientation film formed on the TFT substrate and an orientation film formed on the counter substrate. A first, second or third color filter is formed corresponding to each of the pixels in the display area of the TFT substrate, and an orientation film stopper is formed by an overlapping portion of the first, second or third color filter, outside of the display area. A profile of the orientation film formed on the TFT substrate is defined by the orientation film stopper.

摘要翻译： 一种液晶显示装置，具备：具有显示区域的TFT基板，在该显示区域中，像素电极和TFT排列成矩阵状的像素;与TFT基板相对配置的对置基板，形成在周边的密封材料， TFT基板和对置基板，以及介于形成在TFT基板上的取向膜和形成在对置基板上的取向膜之间的液晶层。 对应于TFT基板的显示区域中的每个像素形成第一，第二或第三滤色器，并且取向膜阻挡件由第一，第二或第三滤色器的重叠部分形成在显示器的外部 区。 在TFT基板上形成的取向膜的轮廓由取向膜止动件限定。