公开(公告)号：US20050215077A1

公开(公告)日：2005-09-29

申请号：US11028864

申请日：2005-01-05

申请人： Kazuo Takeda ,  Takeshi Sato ,  Jun Gotoh ,  Masakazu Saitou ,  Daisuke Mutou

发明人： Kazuo Takeda ,  Takeshi Sato ,  Jun Gotoh ,  Masakazu Saitou ,  Daisuke Mutou

IPC分类号： G02F1/1368 ,  G02F1/133 ,  G09F9/30 ,  G09G3/36 ,  G09G3/38 ,  H01L21/00 ,  H01L21/20 ,  H01L21/26 ,  H01L21/263 ,  H01L21/268 ,  H01L21/336 ,  H01L21/42 ,  H01L21/77 ,  H01L27/32 ,  H01L29/786

CPC分类号： H01L27/1285 ,  H01L27/1296 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78675

摘要： The generation of a projecting intensity distribution in an irradiation laser beam used for forming a polycrystalline semiconductor film is prevented by irradiating the laser beam onto an amorphous semiconductor film to crystallize it while it is being scanned. A dog-ear removing filter for eliminating diffracted light that occurs at boundaries of lenses and acts as a cause of development of dog-ears in the light intensity distribution is disposed in an optical system to cause the light intensity distribution in the irradiation laser beam to be uniform. As a result, by removing the dog ear distributions, the necessity for making the light intensity distribution of the laser beam blur is eliminated, and, consequently, a distribution of high energy efficiency can be maintained and the throughput is improved.

摘要翻译： 用于形成多晶半导体膜的照射激光束中的突出强度分布的产生通过将激光束照射到非晶半导体膜上而在被扫描时使其结晶化而被防止。 用于消除在透镜边界处发生的衍射光并且作为光强度分布中的狗耳发展的原因的狗耳去除滤光器被设置在光学系统中，以使照射激光束中的光强度分布 统一 结果，通过去除狗耳分布，消除了激光束模糊的光强度分布的必要性，从而可以保持高能量效率的分布并提高吞吐量。

公开(公告)号：US20060279744A1

公开(公告)日：2006-12-14

申请号：US11407905

申请日：2006-04-21

申请人： Kazuo Takeda ,  Jun Gotoh ,  Daisuke Mutou

发明人： Kazuo Takeda ,  Jun Gotoh ,  Daisuke Mutou

IPC分类号： G01B11/02

CPC分类号： G01B11/0683 ,  G01B11/0633

摘要： A laser light is projected to a thin film deposited on a transparent substrate, and measurement is performed on the entire measurement area of the substrate, and transmission intensity is measured by a transmission light intensity monitor and reflection light intensity is measured by a reflection light intensity monitor at the same points and at the same number of points on the substrate. From the value of “A=1−(R+T)” where R represents reflectivity and T is transmissivity, film thickness is measured and evaluated from the relation of the value A with film thickness. By this procedure, film thickness can be determined on 10,000 substrates or more per minute and film thickness of thin film can be measured over the entire substrate surface.

公开(公告)号：US07542152B2

公开(公告)日：2009-06-02

申请号：US11407905

申请日：2006-04-21

申请人： Kazuo Takeda ,  Jun Gotoh ,  Daisuke Mutou

发明人： Kazuo Takeda ,  Jun Gotoh ,  Daisuke Mutou

IPC分类号： G01B11/06

CPC分类号： G01B11/0683 ,  G01B11/0633

摘要： A laser light is projected to a thin film deposited on a transparent substrate, and measurement is performed on the entire measurement area of the substrate, and transmission intensity is measured by a transmission light intensity monitor and reflection light intensity is measured by a reflection light intensity monitor at the same points and at the same number of points on the substrate. From the value of “A=1−(R+T)” where R represents reflectivity and T is transmissivity, film thickness is measured and evaluated from the relation of the value A with film thickness. By this procedure, film thickness can be determined on 10,000 substrates or more per minute and film thickness of thin film can be measured over the entire substrate surface.

摘要翻译： 将激光投射到沉积在透明基板上的薄膜上，并且对基板的整个测量区域进行测量，并且透射光强度监测器测量透射强度，并且通过反射光强度 在基板上的相同点和相同数量的点处进行监视。 从“A = 1-（R + T）”的值，其中R表示反射率，T表示透射率，根据值A与膜厚度的关系来测量和评价膜厚度。 通过该程序，可以在10,000个基板以上每分钟测定膜厚度，并且可以在整个基板表面上测量薄膜的膜厚度。

公开(公告)号：US20060254497A1

公开(公告)日：2006-11-16

申请号：US11449664

申请日：2006-06-09

申请人： Kazuo Takeda ,  Takeshi Sato ,  Masakazu Saito ,  Jun Gotoh

发明人： Kazuo Takeda ,  Takeshi Sato ,  Masakazu Saito ,  Jun Gotoh

IPC分类号： C30B5/00

CPC分类号： H01L21/02686 ,  B23K26/066 ,  B23K26/0738 ,  H01L21/02678 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675

摘要： A surface roughness of a polycrystalline semiconductor film to be formed by a laser annealing method is reduced. A transmittance distribution filter is disposed at the optical system of a laser annealing apparatus. The transmittance distribution filter controls an irradiation light intensity distribution along a scanning direction of a substrate formed with an amorphous silicon semiconductor thin film to have a distribution having an energy part equal to or higher than a fine crystal threshold on a high energy light intensity side and an energy part for melting and combining only a surface layer. This transmittance distribution filter is applied to an excimer laser annealing method, a phase shift stripe method or an SLS method respectively using a general line beam to thereby reduce the height of protrusions on a polycrystalline surface.

公开(公告)号：US07151046B2

公开(公告)日：2006-12-19

申请号：US10900365

申请日：2004-07-28

申请人： Kazuo Takeda ,  Takeshi Sato ,  Masakazu Saito ,  Jun Gotoh

发明人： Kazuo Takeda ,  Takeshi Sato ,  Masakazu Saito ,  Jun Gotoh

IPC分类号： H01L21/20

CPC分类号： H01L21/02686 ,  B23K26/066 ,  B23K26/0738 ,  H01L21/02678 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675

摘要： A surface roughness of a polycrystalline semiconductor film to be formed by a laser annealing method is reduced. A transmittance distribution filter is disposed at the optical system of a laser annealing apparatus. The transmittance distribution filter controls an irradiation light intensity distribution along a scanning direction of a substrate formed with an amorphous silicon semiconductor thin film to have a distribution having an energy part equal to or higher than a fine crystal threshold on a high energy light intensity side and an energy part for melting and combining only a surface layer. This transmittance distribution filter is applied to an excimer laser annealing method, a phase shift stripe method or an SLS method respectively using a general line beam to thereby reduce the height of protrusions on a polycrystalline surface.

摘要翻译： 通过激光退火法形成的多晶半导体膜的表面粗糙度降低。 透射率分布滤光器设置在激光退火装置的光学系统中。 透射率分布滤光器控制沿着形成有非晶硅半导体薄膜的基板的扫描方向的照射光强度分布，以具有在高能量光强度侧具有等于或高于精细晶体阈值的能量分布的分布，以及 用于熔化和组合仅表面层的能量部分。 该透射率分布滤波器分别应用于准分子激光退火方法，相移条纹法或SLS法，使用通用线束，从而降低多晶表面上的突起的高度。

公开(公告)号：US20050139830A1

公开(公告)日：2005-06-30

申请号：US10900365

申请日：2004-07-28

申请人： Kazuo Takeda ,  Takeshi Sato ,  Masakazu Saito ,  Jun Gotoh

发明人： Kazuo Takeda ,  Takeshi Sato ,  Masakazu Saito ,  Jun Gotoh

IPC分类号： G02F1/1368 ,  B23K26/06 ,  B23K26/073 ,  H01L21/20 ,  H01L21/268 ,  H01L21/324 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/786 ,  H01L29/10

CPC分类号： H01L21/02686 ,  B23K26/066 ,  B23K26/0738 ,  H01L21/02678 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675

摘要： A surface roughness of a polycrystalline semiconductor film to be formed by a laser annealing method is reduced. A transmittance distribution filter is disposed at the optical system of a laser annealing apparatus. The transmittance distribution filter controls an irradiation light intensity distribution along a scanning direction of a substrate formed with an amorphous silicon semiconductor thin film to have a distribution having an energy part equal to or higher than a fine crystal threshold on a high energy light intensity side and an energy part for melting and combining only a surface layer. This transmittance distribution filter is applied to an excimer laser annealing method, a phase shift stripe method or an SLS method respectively using a general line beam to thereby reduce the height of protrusions on a polycrystalline surface.

摘要翻译： 通过激光退火法形成的多晶半导体膜的表面粗糙度降低。 透射率分布滤光器设置在激光退火装置的光学系统中。 透射率分布滤光器控制沿着形成有非晶硅半导体薄膜的基板的扫描方向的照射光强度分布，以具有在高能量光强度侧具有等于或高于精细晶体阈值的能量分布的分布，以及 用于熔化和组合仅表面层的能量部分。 该透射率分布滤波器分别应用于准分子激光退火方法，相移条纹法或SLS法，使用通用线束，从而降低多晶表面上的突起的高度。

公开(公告)号：US20050142701A1

公开(公告)日：2005-06-30

申请号：US10891522

申请日：2004-07-15

申请人： Hironaru Yamaguchi ,  Kiyoshi Ogata ,  Takuo Tamura ,  Jun Gotoh ,  Masakazu Saito ,  Kazuo Takeda

发明人： Hironaru Yamaguchi ,  Kiyoshi Ogata ,  Takuo Tamura ,  Jun Gotoh ,  Masakazu Saito ,  Kazuo Takeda

IPC分类号： G02F1/1368 ,  G02F1/136 ,  G02F1/1362 ,  G09F9/30 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L21/00 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L21/02686 ,  G02F1/13454 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film. The grain size distribution of the polysilicon film is measured. An optimum value of energy density of laser beam irradiation is calculated on the basis of grain size values measured at two points A and B of the polysilicon film. Then, the average film thickness of a next amorphous silicon film is measured. A value of energy density of laser beam irradiation is calculated on the basis of the average film thickness of the next amorphous silicon film and the average film thickness of the previous amorphous silicon film. The value of energy density is fed back to a laser beam irradiation system. As described above, the energy density of laser beam irradiation to be applied on a silicon film formed on a substrate is controlled in accordance with the film thickness of the silicon film whenever the film thickness of the silicon film is measured. Accordingly, polysilicon uniform and large in grain size can be formed on the whole surface of a large-size substrate. As a result, polysilicon TFTs can be formed in a large area.

摘要翻译： 测量在基板上形成的非晶硅膜的平均膜厚。 然后，用激光束照射非晶硅膜以形成多晶硅膜。 测量多晶硅膜的晶粒尺寸分布。 基于在多晶硅膜的两点A和B测量的晶粒尺寸值来计算激光束照射的能量密度的最佳值。 然后，测定下一非晶硅膜的平均膜厚。 基于下一非晶硅膜的平均膜厚和先前的非晶硅膜的平均膜厚计算激光束照射的能量密度值。 能量密度的值被反馈到激光束照射系统。 如上所述，每当测量硅膜的膜厚时，根据硅膜的膜厚度来控制施加在形成在基板上的硅膜上的激光束照射的能量密度。 因此，可以在大尺寸基板的整个表面上形成均匀且粒径大的多晶硅。 结果，可以在大面积上形成多晶硅TFT。

公开(公告)号：US07232716B2

公开(公告)日：2007-06-19

申请号：US10891522

申请日：2004-07-15

申请人： Hironaru Yamaguchi ,  Kiyoshi Ogata ,  Takuo Tamura ,  Jun Gotoh ,  Masakazu Saito ,  Kazuo Takeda

发明人： Hironaru Yamaguchi ,  Kiyoshi Ogata ,  Takuo Tamura ,  Jun Gotoh ,  Masakazu Saito ,  Kazuo Takeda

IPC分类号： H01L21/66 ,  H01L21/268

CPC分类号： H01L21/02686 ,  G02F1/13454 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film, and the grain size distribution of the polysilicon film is measured. An optimum value of energy density of laser beam irradiation is calculated on the basis of grain size values measured at two points A and B of the polysilicon film. Then, the average film thickness of an amorphous silicon film formed on a subsequent substrate is measured. A value of energy density of laser beam irradiation for the subsequent amorphous silicon film is calculated on the basis of the two average film thicknesses. Accordingly, a uniform polysilicon film of large grain sizes is formed on the whole surface of a large-size substrate to provide polysilicon TFTs in a large area.

摘要翻译： 测量在基板上形成的非晶硅膜的平均膜厚。 然后，用激光束照射非晶硅膜以形成多晶硅膜，并测量多晶硅膜的晶粒尺寸分布。 基于在多晶硅膜的两点A和B测量的晶粒尺寸值来计算激光束照射的能量密度的最佳值。 然后，测量形成在随后的基板上的非晶硅膜的平均膜厚。 基于两个平均膜厚度计算随后的非晶硅膜的激光束照射的能量密度值。 因此，在大尺寸基板的整个表面上形成均匀的大晶粒尺寸的多晶硅膜，以提供大面积的多晶硅TFT。

公开(公告)号：US07655950B2

公开(公告)日：2010-02-02

申请号：US11341681

申请日：2006-01-30

申请人： Takeshi Sato ,  Kazuo Takeda ,  Masakazu Saito ,  Jun Goto ,  Makoto Ohkura

发明人： Takeshi Sato ,  Kazuo Takeda ,  Masakazu Saito ,  Jun Goto ,  Makoto Ohkura

IPC分类号： H01L29/04

CPC分类号： H01L21/0268 ,  B23K26/0622 ,  B23K26/066 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/78645

摘要： The present invention provides a manufacturing method of a high performance active matrix substrate at a high throughput with a less expensive apparatus, and an image display device using the active matrix substrate. On a stage moving in the short axis direction X and long axis direction Y on a rail, a glass substrate is carried, which has an amorphous silicon semiconductor film formed. Polycrystallized and large grain silicon film may be obtained by intensity modulating the pulsed laser beam in a line beam shape by means of a phase shift mask with a periodicity in the long axis direction Y of the laser beam, moving the laser beam randomly in the modulation direction of the amorphous silicon semiconductor film formed on the glass substrate to expose to crystallize the film. The image display device may incorporate an active matrix substrate having active elements such as thin film transistors formed by this silicon film.

摘要翻译： 本发明以较低成本的装置提供高产量的高性能有源矩阵基板的制造方法以及使用有源矩阵基板的图像显示装置。 在轨道上沿短轴方向X和长轴方向Y移动的台架上，承载形成有非晶硅半导体膜的玻璃基板。 通过利用在激光束的长轴方向Y上具有周期性的相移掩模以线束形式对脉冲激光束进行强度调制，可以获得多晶硅和大晶粒硅膜，在激光束的随机调制 在玻璃基板上形成的非晶硅半导体膜的方向露出以使膜结晶。 该图像显示装置可以包括具有有源元件的有源矩阵基板，例如由该硅膜形成的薄膜晶体管。

公开(公告)号：US07022558B2

公开(公告)日：2006-04-04

申请号：US10712712

申请日：2003-11-14

申请人： Takeshi Sato ,  Kazuo Takeda ,  Masakazu Saito ,  Jun Goto ,  Makoto Ohkura

发明人： Takeshi Sato ,  Kazuo Takeda ,  Masakazu Saito ,  Jun Goto ,  Makoto Ohkura

IPC分类号： H01L21/00

CPC分类号： H01L21/0268 ,  B23K26/0622 ,  B23K26/066 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/78645

摘要： The present invention provides a manufacturing method of a high performance active matrix substrate at a high throughput with a less expensive apparatus, and an image display device using the active matrix substrate. On a stage moving in the short axis direction X and long axis direction Y on a rail, a glass substrate is carried, which has an amorphous silicon semiconductor film formed. Polycrystallized and large grain silicon film may be obtained by intensity modulating the pulsed laser beam in a line beam shape by means of a phase shift mask with a periodicity in the long axis direction Y of the laser beam, moving the laser beam randomly in the modulation direction of the amorphous silicon semiconductor film formed on the glass substrate to expose to crystallize the film. The image display device may incorporate an active matrix substrate having active elements such as thin film transistors formed by this silicon film.

摘要翻译： 本发明以较低成本的装置提供高产量的高性能有源矩阵基板的制造方法以及使用有源矩阵基板的图像显示装置。 在轨道上沿短轴方向X和长轴方向Y移动的台架上，承载形成有非晶硅半导体膜的玻璃基板。 通过利用在激光束的长轴方向Y上具有周期性的相移掩模以线束形式对脉冲激光束进行强度调制，可以获得多晶硅和大晶粒硅膜，在激光束的随机调制 在玻璃基板上形成的非晶硅半导体膜的方向露出以使膜结晶。 该图像显示装置可以包括具有有源元件的有源矩阵基板，例如由该硅膜形成的薄膜晶体管。