公开(公告)号：US4714501A

公开(公告)日：1987-12-22

申请号：US798702

申请日：1985-11-15

申请人： Kazuo Yamanaka ,  Hiroo Nagano ,  Takao Minami ,  Yaautaka Okada ,  Mamoru Inoue ,  Hiroshi Susukida ,  Kichiro Onimura ,  Toshio Yonezawa ,  Nobuya Sasaguri ,  Katsuji Kawaguchi ,  Takaya Kusakabe

发明人： Kazuo Yamanaka ,  Hiroo Nagano ,  Takao Minami ,  Yaautaka Okada ,  Mamoru Inoue ,  Hiroshi Susukida ,  Kichiro Onimura ,  Toshio Yonezawa ,  Nobuya Sasaguri ,  Katsuji Kawaguchi ,  Takaya Kusakabe

IPC分类号： C22C19/05 ,  C22C30/00 ,  C22F1/10

CPC分类号： C22F1/10 ,  C22C19/05

摘要： An alloy for heat transfer pipes excellent in an alkali stress corrosion cracking resistance which is obtained by heating and retaining said alloy at a temperature within the range of a temperature (T.degree.C.), at which a carbide in said alloy is thoroughly solubilized, to T+100.degree. C. for 1 minute or more; cooling it once to a level of 200.degree. C. or less; and carrying out a thermal treatment under conditions within a hatched range Z in FIG. 2, said alloy comprising: in terms of % by weight, 0.15% or less of C; 1.0% or less of Si; 1.0% or less of Mn; 25 to 35% of Cr; 40 to 70% of Ni; 0.5% or less of Al; 0.01 to 1.0% of Ti; 0.5 to 5.0%, in all, of one or more of Mo, W and V; 0.30% or less of P; 0.020% or less of S; and the residue of Fe and impurities.

摘要翻译： 一种耐碱腐蚀开裂性优异的传热管用合金，其特征在于，在将上述合金中的碳化物充分溶解的温度（T℃）下进行加热保持， 至T + 100℃1分钟以上; 冷却一次至200℃以下; 并在图1中的阴影范围Z内的条件下进行热处理。 2，所述合金包含：按重量％计，0.15％或更少的C; 1.0％以下的Si; 1.0％以下的Mn; 25〜35％的Cr; 40〜70％的Ni; 0.5％以下的Al; 0.01〜1.0％Ti; 0.5〜5.0％，全部为Mo，W和V中的一种或多种; 0.30％以下的P; 0.020％以下的S; 并残留Fe和杂质。

公开(公告)号：US4710237A

公开(公告)日：1987-12-01

申请号：US815774

申请日：1986-01-02

申请人： Toshio Yonezawa ,  Nobuya Sasaguri ,  Kichiro Onimura ,  Hiroshi Susukida ,  Katsuji Kawaguchi ,  Hiroo Nagano ,  Takao Minami ,  Kazuo Yamanaka ,  Yasutaka Okada ,  Mamoru Inoue

发明人： Toshio Yonezawa ,  Nobuya Sasaguri ,  Kichiro Onimura ,  Hiroshi Susukida ,  Katsuji Kawaguchi ,  Hiroo Nagano ,  Takao Minami ,  Kazuo Yamanaka ,  Yasutaka Okada ,  Mamoru Inoue

IPC分类号： C22C19/05 ,  C22F1/00 ,  C22F1/10

CPC分类号： C22C19/05 ,  C22F1/10

摘要： A method for a thermal treatment of a nickel based alloy, characterized in that said nickel based alloy for a material which will be subjected to a high-temperature and high-pressure water or vapor comprises, in terms of % by weight, 58% or more of Ni, 25 to 35% of Cr, 0.003% or less of B, 0.012 to 0.035% of C, 1% or less of Mn, 0.5% or less of Si, 0.015% or less of P, 0.015% or less of S, and the residue of Fe and usual impurities; in a first thermal treatment process, said nickel based alloy is heated and retained at a temperature of T.degree. C. to (T+100).degree.C. and is cooled at a cooling rate of a furnace cooling rate or more; and in a second thermal treatment process, said nickel based alloy is then retained at a temperature of 600.degree. to 750.degree. C. and at a temperature within a sensitization recovery range for a period of 0.1 to 100 hours and is cooled at a cooling rate of said furnace cooling rate or more.

摘要翻译： 一种镍基合金的热处理方法，其特征在于，用于经受高温高压水或蒸汽的材料的所述镍基合金以重量％计含有58％或 较多的Ni，25〜35％的Cr，0.003％以下的B，0.012〜0.035％的C，1％以下的Mn，0.5％以下的Si，0.015％以下的P，0.015％以下 的S，以及Fe和常规杂质的残留物; 在第一热处理工艺中，将所述镍基合金在T℃至（T + 100）℃的温度下加热并保持，并以炉冷却速率或更高的冷却速率冷却; 然后在第二热处理工艺中，然后将所述镍基合金保持在600至750℃的温度和在致敏恢复范围内的温度下进行0.1至100小时的时间，并以冷却速率 所述炉冷却速度或更高。

公开(公告)号：US4715909A

公开(公告)日：1987-12-29

申请号：US878398

申请日：1986-06-19

申请人： Takao Minami ,  Hiroo Nagano ,  Kazuo Yamanaka ,  Yasutaka Okada ,  Hiroshi Susukida ,  Kichiro Onimura ,  Toshio Yonezawa ,  Nobuya Sasaguri

发明人： Takao Minami ,  Hiroo Nagano ,  Kazuo Yamanaka ,  Yasutaka Okada ,  Hiroshi Susukida ,  Kichiro Onimura ,  Toshio Yonezawa ,  Nobuya Sasaguri

IPC分类号： C22C19/05 ,  C22F1/10

CPC分类号： C22F1/10 ,  C22C19/05

摘要： A nickel-chromium alloy excellent in a stress corrosion cracking resistance which is obtained by carrying out an annealing treatment under specific conditions, said alloy having the following composition:______________________________________ in terms of % by weight, ______________________________________ 0.04% or less of C; 1.0% or less of Si; 1.0% or less of Mn; 0.030% or less of P; 0.02% or less of S; 40 to 70% of Ni; 25 to 35% of Cr; 0.1 to 0.5% of Al; 0.05 to 1.0% of Ti; 0.5 to 5.0% in all of one or more of Mo, W and V, and ______________________________________ the residue comprising substantially Fe. A nickel-chromium alloy further including 0.2 to 5.0% of Nb subject to Ti=0.2 to 1.0% and Nb/C=10 to 125.

摘要翻译： 通过在特定条件下进行退火处理获得的耐应力腐蚀开裂性优异的镍铬合金，所述合金具有以下组成： - 以重量％计，-0.04％以下的C; 1.0％以下的Si; -1.0％以下的Mn; 0.030％以下的P; -0.02％以下的S; 40〜70％的Ni; -25〜35％的Cr; 0.1〜0.5％的Al; -0.05〜1.0％的Ti; 在Mo，W和V中的一种或多种中的一种或多种中为-0.5至5.0％，以及 - 基本上包含Fe的残余物。 进一步含有Ti = 0.2〜1.0％，Nb / C = 10〜125的Nb为0.2〜5.0％的镍铬合金。

公开(公告)号：US5976275A

公开(公告)日：1999-11-02

申请号：US836519

申请日：1997-06-05

申请人： Toshio Yonezawa ,  Toshihiko Iwamura ,  Hiroshi Kanasaki ,  Koji Fujimoto ,  Shizuo Nakada ,  Kazuhide Ajiki ,  Mitsuhiro Nakamura

发明人： Toshio Yonezawa ,  Toshihiko Iwamura ,  Hiroshi Kanasaki ,  Koji Fujimoto ,  Shizuo Nakada ,  Kazuhide Ajiki ,  Mitsuhiro Nakamura

IPC分类号： G21D1/00 ,  C21D6/00 ,  C21D8/00 ,  C22C30/00 ,  C22C38/00 ,  C22C38/44 ,  C22C38/54 ,  C22C38/302

CPC分类号： C22C30/00 ,  C21D6/004 ,  C22C38/44 ,  C21D8/005

摘要： The present invention aims at providing structural materials having a resistance to degradation by neutron irradiation, causing no SCC in an environment of light-water reactors even after subjecting the materials to neutron irradiation of approximately at least 1.times.10.sup.22 n/cm.sup.2 (E>1 MeV), and having thermal expansion coefficients approximately similar to that of structural materials. The high nickel austenitic stainless steels of the present invention having a resistance to degradation by neutron irradiation can be produced by subjecting stainless steels having compositions (by weight %) of 0.005 to 0.08% of carbon, at most 0.3% of Mn, at most 0.2% of (Si+P+S), 25 to 40% of Ni, 25 to 40% of Cr, at most 3% of Mo or at most 5% of (Mo+W), at most 0.3% of Nb+Ta, at most 0.3% of Ti, at most 0.001% of B and the balance of Fe to a solution-annealing treatment at a temperature of 1000 to 1150.degree. C.

摘要翻译： PCT No.PCT / JP96 / 02442 Sec。 371日期：1997年6月5日 102（e）日期1996年6月5日PCT提交1996年8月30日PCT公布。 公开号WO97 / 09456 日期1997年3月13日本发明旨在提供具有耐中子辐射降解性的结构材料，即使在使材料经受大约至少1×1022n / cm 2的中子照射之后也不会在轻水反应堆的环境中产生SCC（ E> 1 MeV），并且具有与结构材料大致相似的热膨胀系数。 具有耐中子辐射降解性的本发明的高镍奥氏体不锈钢可以通过将具有0.005-0.08％的碳，至多为0.3％Mn的组成（重量％）的不锈钢制成至多0.2 （Si + P + S），25〜40％的Ni，25〜40％的Cr，至多3％的Mo或至多5％的（Mo + W），至多0.3％的Nb + Ta ，至多0.3％的Ti，至多0.001％的B，余量为在1000至1150℃的温度下进行的溶液退火处理。

公开(公告)号：US5466289A

公开(公告)日：1995-11-14

申请号：US123461

申请日：1993-09-17

申请人： Toshio Yonezawa ,  Kenrou Mitsui ,  Makoto Nakazima ,  Mitsuo Kinoshita ,  Toshihide Shimono ,  Tsuneo Yamamoto

发明人： Toshio Yonezawa ,  Kenrou Mitsui ,  Makoto Nakazima ,  Mitsuo Kinoshita ,  Toshihide Shimono ,  Tsuneo Yamamoto

IPC分类号： C04B24/16 ,  C04B24/26 ,  C04B24/32 ,  C04B28/02

CPC分类号： C04B24/32 ,  C04B24/16 ,  C04B24/2688 ,  C04B28/02 ,  C04B2103/408 ,  C04B2103/50 ,  C04B2111/00068 ,  Y02W30/92 ,  Y02W30/94

摘要： Ultra high-strength hydraulic cement compositions with extremely low water-to-cement ratio of 10-30% and having high fluidity and improved capability of preventing slump loss, from which high-quality ultra high-strength hardened concrete and mortar can be obtained with superior workability, contain a binder composed of cement or a mixture of cement and a microscopic powder admixture, aggregates, water and a cement dispersion agent composed of water-soluble vinyl copolymers obtained by aqueous solution radical polymerization of five specified kinds of monomers at a ratio within a specified range The unit content of the binder is 400-1300kg/m.sup.3, the water-to-binder ratio is 10-30% and the content of cement dispersion agent is 0.1-2.0 weight parts for 100 weight parts of the binder.

摘要翻译： 超高强度水泥水泥组合物，具有极低的水与水泥比为10-30％，流动性高，防止坍落度损失的能力得到提高，可以从中获得高质量的超高强度硬化混凝土和砂浆， 优异的可加工性，含有由水泥或水泥和微粉末混合物，聚集体，水和水泥分散剂组成的粘合剂，其由通过五种特定种类的单体的水溶液自由基聚合获得的水溶性乙烯基共聚物组成， 在指定范围内粘合剂的单位含量为400-1300kg / m3，水与粘合剂的比例为10-30％，100重量份粘合剂的水泥分散剂含量为0.1-2.0重量份。

公开(公告)号：US4587928A

公开(公告)日：1986-05-13

申请号：US200546

申请日：1980-10-24

申请人： Toshio Yonezawa ,  Hisashi Muraoka

发明人： Toshio Yonezawa ,  Hisashi Muraoka

IPC分类号： H01L21/673 ,  C30B25/08 ,  C30B25/12 ,  C30B31/10 ,  C30B31/14 ,  H01L21/205 ,  H01L21/304 ,  H01L21/31 ,  B05C11/00

CPC分类号： C30B25/12 ,  C30B25/08 ,  C30B31/10 ,  C30B31/14

摘要： A process tube that is impermeable to impurities for use in the manufacture of semiconductor devices. The process tube is made of sintered silicon carbide and it may optionally be infiltrated with elemental silicon. The inner surface of the process tube includes a layer of high density silicon carbide to prevent diffusion of impurity species through the walls of the process tube.

摘要翻译： 一种用于制造半导体器件的杂质不可渗透的工艺管。 工艺管由烧结碳化硅制成，并且可以任选地用元素硅渗透。 处理管的内表面包括高密度碳化硅层，以防止杂质物质通过处理管的壁扩散。

公开(公告)号：US4561009A

公开(公告)日：1985-12-24

申请号：US554336

申请日：1983-11-22

申请人： Toshio Yonezawa ,  Masaharu Aoyama

发明人： Toshio Yonezawa ,  Masaharu Aoyama

IPC分类号： H01L21/316 ,  H01L23/532 ,  H01L21/283 ,  H01L23/08 ,  H01L23/54

CPC分类号： H01L21/02244 ,  H01L21/02142 ,  H01L21/02145 ,  H01L21/02161 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02194 ,  H01L21/02203 ,  H01L21/02258 ,  H01L21/02266 ,  H01L21/31616 ,  H01L21/31687 ,  H01L23/53219 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10S438/937

摘要： A semiconductor device is disclosed which includes a semiconductor substrate; a metal wiring layer comprising an Al alloy formed on the surface of this substrate; and an alumina layer covering this metal layer and containing at least one metal selected from the group consisting of Cu, Mg, Ni, Cr, Mn, Ti and Y. A method for manufacturing such a semiconductor device is also disclosed.

摘要翻译： 公开了一种半导体器件，其包括半导体衬底; 在该基板的表面上形成有Al合金的金属配线层; 以及覆盖该金属层并含有选自Cu，Mg，Ni，Cr，Mn，Ti和Y中的至少一种金属的氧化铝层。还公开了制造这种半导体器件的方法。

公开(公告)号：US4525523A

公开(公告)日：1985-06-25

申请号：US526820

申请日：1983-08-26

申请人： Hatsuo Nakamura ,  Tiharu Kato ,  Toshio Yonezawa ,  Shigeo Koguchi ,  Kiyoto Mori ,  Masahiko Igarashi

发明人： Hatsuo Nakamura ,  Tiharu Kato ,  Toshio Yonezawa ,  Shigeo Koguchi ,  Kiyoto Mori ,  Masahiko Igarashi

IPC分类号： G03F7/008 ,  C08K5/28 ,  G03F7/012 ,  C08L9/00

CPC分类号： G03F7/0125 ,  C08K5/28

摘要： There is proposed a negative-working photoresist coating composition of an improved resolution, which comprises a cyclized polyisoprene having a weight-average molecular weight of 10,000 to 100,000 and a molecular weight distribution of not more than 1.9, an organic solvent of the cyclized polyisoprene, and a bisazido compound as a crosslinking agent.

摘要翻译： 提出了一种改进分辨率的负性光致抗蚀剂涂料组合物，其包含重均分子量为10,000至100,000，分子量分布不大于1.9的环化聚异戊二烯，环化聚异戊二烯的有机溶剂， 和作为交联剂的双叠氮化合物。

公开(公告)号：US4415372A

公开(公告)日：1983-11-15

申请号：US313332

申请日：1981-10-20

申请人： Yutaka Koshino ,  Toshio Yonezawa ,  Takashi Ajima ,  Jiro Ohshima

发明人： Yutaka Koshino ,  Toshio Yonezawa ,  Takashi Ajima ,  Jiro Ohshima

IPC分类号： H01L21/263 ,  H01L21/265 ,  H01L21/324

CPC分类号： H01L21/324 ,  H01L21/2636 ,  H01L21/26513 ,  Y10S148/046

摘要： The invention provides a method for fabricating a semiconductor device which comprises the steps of ion-implanting an impurity into a monocrystalline semiconductor substrate; irradiating the region into which the impurity ions have been implanted with an accelerated electron beam under the conditions that the acceleration voltage is 20 to 200 KeV, and the current is 0.01 to 1 mA and the exposure dose is 10.sup.20 to 10.sup.15 /cm.sup.2 ; and carrying out annealing to form a semiconductor region of one conductivity type. According to the present invention, a semiconductor device can be fabricated which has fewer lattice defects and in which the lifetime of the carriers is long.

摘要翻译： 本发明提供一种制造半导体器件的方法，该方法包括以下步骤：将杂质离子注入到单晶半导体衬底中; 在加速电压为20〜200KeV，电流为0.01〜1mA，曝光量为1020〜1015 / cm2的条件下，用加速电子束照射杂质离子注入的区域; 并进行退火以形成一种导电类型的半导体区域。 根据本发明，可以制造具有更少的晶格缺陷并且其中载体的寿命长的半导体器件。

公开(公告)号：US4224636A

公开(公告)日：1980-09-23

申请号：US915542

申请日：1978-06-14

申请人： Toshio Yonezawa ,  Takashi Ajima ,  Masato Uchida

发明人： Toshio Yonezawa ,  Takashi Ajima ,  Masato Uchida

IPC分类号： H01L21/314 ,  H01L23/29 ,  H01L23/31 ,  H01L29/34

CPC分类号： H01L23/3171 ,  H01L21/314 ,  H01L23/291 ,  H01L23/3192 ,  H01L2924/0002

摘要： A semiconductor device comprising a semiconductor substrate and protective films formed thereon. The protective films comprise at least one silicon carbide film which may be pure or may contain particular impurities.

摘要翻译： 一种半导体器件，包括半导体衬底和形成在其上的保护膜。 保护膜包括至少一个可以是纯的或可能含有特定杂质的碳化硅膜。