公开(公告)号：US09279762B2

公开(公告)日：2016-03-08

申请号：US13500305

申请日：2010-10-01

申请人： Kazushi Hayashi ,  Hiroyuki Takamatsu ,  Yoshito Fukumoto ,  Shingo Sumie

发明人： Kazushi Hayashi ,  Hiroyuki Takamatsu ,  Yoshito Fukumoto ,  Shingo Sumie

IPC分类号： G01N21/31 ,  G01N21/3563 ,  H01L21/66

CPC分类号： G01N21/3151 ,  G01N21/31 ,  G01N2021/3568 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor carrier lifetime measuring apparatus A1 of the present invention, at least two types of light having mutually different wavelengths are irradiated onto a semiconductor X to be measured, a predetermined measurement wave is irradiated onto the semiconductor X to be measured, a reflected wave of the measurement wave that has been reflected by the semiconductor X to be measured or a transmitted wave of the measurement wave that has transmitted through the semiconductor X to be measured is detected, and the carrier lifetime in the semiconductor X to be measured is obtained based on the detection results so as to minimize the error. Accordingly, the semiconductor carrier lifetime measuring apparatus A1 configured as described above can more accurately measure the carrier lifetime.

摘要翻译： 在本发明的半导体载体寿命测量装置A1中，将具有相互不同波长的至少两种类型的光照射到要测量的半导体X上，将预定测量波照射到要测量的半导体X上，反射波 检测被测半导体X所反射的测量波，或检测通过半导体X的被测量的测定波的透过波，测定半导体X的载流子寿命， 检测结果，以最小化误差。 因此，如上所述构成的半导体载体寿命测定装置A1能够更准确地测定载流子寿命。

公开(公告)号：US20120203473A1

公开(公告)日：2012-08-09

申请号：US13500305

申请日：2010-10-01

申请人： Kazushi Hayashi ,  Hiroyuki Takamatsu ,  Yoshito Fukumoto ,  Naokazu Sakoda ,  Masahiro Inui ,  Shingo Sumie

发明人： Kazushi Hayashi ,  Hiroyuki Takamatsu ,  Yoshito Fukumoto ,  Naokazu Sakoda ,  Masahiro Inui ,  Shingo Sumie

IPC分类号： G06F19/00 ,  G01N21/55

CPC分类号： G01N21/3151 ,  G01N21/31 ,  G01N2021/3568 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor carrier lifetime measuring apparatus A1 of the present invention, at least two types of light having mutually different wavelengths are irradiated onto a semiconductor X to be measured, a predetermined measurement wave is irradiated onto the semiconductor X to be measured, a reflected wave of the measurement wave that has been reflected by the semiconductor X to be measured or a transmitted wave of the measurement wave that has transmitted through the semiconductor X to be measured is detected, and the carrier lifetime in the semiconductor X to be measured is obtained based on the detection results so as to minimize the error. Accordingly, the semiconductor carrier lifetime measuring apparatus A1 configured as described above can more accurately measure the carrier lifetime.

摘要翻译： 在本发明的半导体载体寿命测量装置A1中，将具有相互不同波长的至少两种类型的光照射到要测量的半导体X上，将预定测量波照射到要测量的半导体X上，反射波 检测被测半导体X所反射的测量波，或检测通过半导体X的被测量的测定波的透过波，测定半导体X的载流子寿命， 检测结果，以最小化误差。 因此，如上所述构成的半导体载体寿命测定装置A1能够更准确地测定载流子寿命。

公开(公告)号：US5760597A

公开(公告)日：1998-06-02

申请号：US659515

申请日：1996-06-06

申请人： Naoyuki Yoshida ,  Hiroyuki Takamatsu ,  Shingo Sumie ,  Yutaka Kawata ,  Hidehisa Hashizume ,  Futoshi Ojima ,  Yuji Hirao

发明人： Naoyuki Yoshida ,  Hiroyuki Takamatsu ,  Shingo Sumie ,  Yutaka Kawata ,  Hidehisa Hashizume ,  Futoshi Ojima ,  Yuji Hirao

IPC分类号： G01N21/88 ,  G01N21/00 ,  G01N21/956 ,  G01R31/265 ,  G01R31/28 ,  H01L21/66 ,  G01R31/26

CPC分类号： G01R31/2656 ,  G01R31/2831 ,  H01L22/14

摘要： In addition to microwave and excitation light, bias light as well is irradiated upon a surface of a semiconductor sample that is passivated using a solution which contains an electrolyte. Irradiation of the bias light increases the quantity of ionic substances that exist in the solution, largely changes a surface potential of the semiconductor sample, and suppresses surface recombination. This makes it possible to measure the lifetime of carriers which exist within the semiconductor sample at a high accuracy, without influenced by surface recombination.

摘要翻译： 除了微波和激发光之外，偏光也照射在使用含有电解质的溶液钝化的半导体样品的表面上。 偏置光的照射增加溶液中存在的离子物质的量，极大地改变了半导体样品的表面电位，并抑制了表面复合。 这使得可以以高精度测量半导体样品内存在的载流子的寿命，而不受表面复合的影响。

公开(公告)号：US5619326A

公开(公告)日：1997-04-08

申请号：US409670

申请日：1995-03-24

申请人： Hiroyuki Takamatsu ,  Tsutomu Morimoto ,  Shingo Sumie ,  Naoyuki Yoshida

发明人： Hiroyuki Takamatsu ,  Tsutomu Morimoto ,  Shingo Sumie ,  Naoyuki Yoshida

IPC分类号： G01N29/00 ,  G01N21/00 ,  G01N21/17 ,  G01N21/45 ,  G01B9/02

CPC分类号： G01N21/171

摘要： A sample evaluation method based on the measurement of photothermal displacement in which two exciting light beams and two measuring light beams are produced by a laser source, the exciting beams are rendered intensity modulation in opposite phase relationship by an acoustic-optic modulator and illuminated to different positions of a sample, the measuring beams are provided with different oscillation frequencies by acoustic-optic modulators and illuminated to the irradiation positions of the exciting beams correspondingly, the reflected lights of measuring beams from the sample are merged so as to interfere with each other, and the sample is evaluated based on the phase of the interference light. The method is capable of measuring the photothermal displacement accurately and stably without implementing intricate signal processings.

摘要翻译： 基于通过激光源产生两个激发光束和两个测量光束的光热位移测量的样本评估方法，激发光束通过声光调制器呈相反相位关系的强度调制，并被照射到不同的 样品的位置，测量光束通过声光调制器被提供有不同的振荡频率，并相应地照射到激发光束的照射位置，来自样品的测量光束的反射光被合并以相互干扰， 并且基于干涉光的相位来评估样品。 该方法能够精确稳定地测量光热位移，而不需要执行复杂的信号处理。

公开(公告)号：US5298970A

公开(公告)日：1994-03-29

申请号：US955241

申请日：1992-10-01

申请人： Hiroyuki Takamatsu ,  Yoshiro Nishimoto ,  Shingo Sumie

发明人： Hiroyuki Takamatsu ,  Yoshiro Nishimoto ,  Shingo Sumie

IPC分类号： G01J9/04 ,  G01N21/17 ,  G01N21/21 ,  G01B9/02

CPC分类号： G01N21/1717 ,  G01J9/04 ,  G01N2021/1731 ,  G01N2021/1782 ,  G01N21/21

摘要： When evaluating defects, etc. of a sample by measuring thermal expansion displacement on the surface of the sample, which is produced by irradiating thereto an excitation beam of which intensity is cyclically modulated, a measuring beam having the displacement frequency F.sub.1 is irradiated to the vibrating surface of the sample, and the reflection beam is interfered with a reference beam having the frequency F.sub.2. The beat wave signal E.sub.1 (Beat frequency F.sub.b =F.sub.1 -F.sub.2) is converted to a binary signal E.sub.2. Then, the sample is evaluated by signals which are obtained by giving a suitable processing to the binary signals. In addition, the optic axes alignment is eliminated by utilizing the excitation beam itself concurrently as measuring beam.

摘要翻译： 当通过测量样品的表面上的热膨胀位移来评估样品的缺陷等时，其通过向其照射强度为周期性调制的激发光束而产生，将具有位移频率F1的测量光照射到振动 样品的表面，并且反射光束被干扰具有频率F2的参考光束。 拍频信号E1（拍频Fb = F1-F2）被转换为二进制信号E2。 然后，通过对二进制信号给出合适的处理而获得的信号来评估样本。 此外，通过将激发光束本身同时用作测量光束来消除光轴对准。

公开(公告)号：US5943437A

公开(公告)日：1999-08-24

申请号：US725950

申请日：1996-10-07

申请人： Shingo Sumie ,  Tsutomu Morimoto ,  Yuichiro Gotoh ,  Eiji Takahashi ,  Shouji Kanbe ,  Akira Okamoto

发明人： Shingo Sumie ,  Tsutomu Morimoto ,  Yuichiro Gotoh ,  Eiji Takahashi ,  Shouji Kanbe ,  Akira Okamoto

IPC分类号： G06T7/00 ,  H01L21/66 ,  G06K9/00

CPC分类号： H01L22/20 ,  G06T7/001 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01L22/12

摘要： A surface image of a semiconductor wafer having a defect is picked up as a inspection image while a surface image of a semiconductor wafer having no defect is stored in an image memory as a reference image. A density difference image between the inspection image and the reference image. By extracting the defect in wiring and non-wiring regions from the density difference image, extract images are obtained. Two luminance information for wiring and non-wiring regions are obtained from extract images. Based on the luminance information, the type of the defect is determined and a production process where the defect has occurred is detect.

摘要翻译： 拾取具有缺陷的半导体晶片的表面图像作为检查图像，同时将没有缺陷的半导体晶片的表面图像作为参考图像存储在图像存储器中。 检查图像与参考图像之间的浓度差图像。 通过从密度差图像中提取布线和非布线区域中的缺陷，获得提取图像。 从提取图像获得布线和非布线区域的两个亮度信息。 基于亮度信息，确定缺陷的类型并检测发生缺陷的生产过程。

公开(公告)号：US5790252A

公开(公告)日：1998-08-04

申请号：US720065

申请日：1996-09-27

申请人： Hisashi Masumura ,  Hideo Kudo ,  Shingo Sumie ,  Hidetoshi Tsunaki ,  Yuji Hirao ,  Noritaka Morioka

发明人： Hisashi Masumura ,  Hideo Kudo ,  Shingo Sumie ,  Hidetoshi Tsunaki ,  Yuji Hirao ,  Noritaka Morioka

IPC分类号： H01L21/66 ,  G01B9/02

CPC分类号： H01L22/12

摘要： The invention seeks to permit evaluation of edge portion of like inclined surfaces of wafer with high accuracy without the conventional destruction process based on the selective etching process but with the contact-free, non-destructive and high accuracy optical acoustical process. To this end, the invention features determination of residual damages as crystal damages caused to wafer edge in an optical acoustical process, which comprises the steps of causing a measurement probe to face each of three exciting laser beam irradiation points on upper and lower inclined surfaces and at an accurate end of an edge portion of a semiconductor wafer, and determining a thermal response induced by the exciting laser beam by a laser interference process.

摘要翻译： 本发明试图允许以高精度评估晶片的倾斜表面的边缘部分，而不需要基于选择性蚀刻工艺的常规的破坏过程，而是利用无接触的非破坏性和高精度的光学声学过程。 为此，本发明的特征在于确定作为在光学声学过程中对晶片边缘引起的晶体损伤的残余损伤，其包括以下步骤：使测量探针面对上和下倾斜表面上的三个激发激光束照射点中的每一个， 在半导体晶片的边缘部分的精确端处，并且通过激光干涉处理确定由激发激光束引起的热响应。