摘要:
A sample evaluation method based on the measurement of photothermal displacement in which two exciting light beams and two measuring light beams are produced by a laser source, the exciting beams are rendered intensity modulation in opposite phase relationship by an acoustic-optic modulator and illuminated to different positions of a sample, the measuring beams are provided with different oscillation frequencies by acoustic-optic modulators and illuminated to the irradiation positions of the exciting beams correspondingly, the reflected lights of measuring beams from the sample are merged so as to interfere with each other, and the sample is evaluated based on the phase of the interference light. The method is capable of measuring the photothermal displacement accurately and stably without implementing intricate signal processings.
摘要:
In addition to microwave and excitation light, bias light as well is irradiated upon a surface of a semiconductor sample that is passivated using a solution which contains an electrolyte. Irradiation of the bias light increases the quantity of ionic substances that exist in the solution, largely changes a surface potential of the semiconductor sample, and suppresses surface recombination. This makes it possible to measure the lifetime of carriers which exist within the semiconductor sample at a high accuracy, without influenced by surface recombination.
摘要:
In a semiconductor carrier lifetime measuring apparatus A1 of the present invention, at least two types of light having mutually different wavelengths are irradiated onto a semiconductor X to be measured, a predetermined measurement wave is irradiated onto the semiconductor X to be measured, a reflected wave of the measurement wave that has been reflected by the semiconductor X to be measured or a transmitted wave of the measurement wave that has transmitted through the semiconductor X to be measured is detected, and the carrier lifetime in the semiconductor X to be measured is obtained based on the detection results so as to minimize the error. Accordingly, the semiconductor carrier lifetime measuring apparatus A1 configured as described above can more accurately measure the carrier lifetime.
摘要:
In a semiconductor carrier lifetime measuring apparatus A1 of the present invention, at least two types of light having mutually different wavelengths are irradiated onto a semiconductor X to be measured, a predetermined measurement wave is irradiated onto the semiconductor X to be measured, a reflected wave of the measurement wave that has been reflected by the semiconductor X to be measured or a transmitted wave of the measurement wave that has transmitted through the semiconductor X to be measured is detected, and the carrier lifetime in the semiconductor X to be measured is obtained based on the detection results so as to minimize the error. Accordingly, the semiconductor carrier lifetime measuring apparatus A1 configured as described above can more accurately measure the carrier lifetime.
摘要:
When evaluating defects, etc. of a sample by measuring thermal expansion displacement on the surface of the sample, which is produced by irradiating thereto an excitation beam of which intensity is cyclically modulated, a measuring beam having the displacement frequency F.sub.1 is irradiated to the vibrating surface of the sample, and the reflection beam is interfered with a reference beam having the frequency F.sub.2. The beat wave signal E.sub.1 (Beat frequency F.sub.b =F.sub.1 -F.sub.2) is converted to a binary signal E.sub.2. Then, the sample is evaluated by signals which are obtained by giving a suitable processing to the binary signals. In addition, the optic axes alignment is eliminated by utilizing the excitation beam itself concurrently as measuring beam.
摘要:
A liquid sample is irradiated with excitation light and measurement light, and a measurement position at which a traveling path of the measurement light passes through an excitation section of the excitation light in the sample is changed while the sample is being irradiated with the excitation light and the measurement light. Then, the phase change of the measurement light is measured for each measurement by optical interferometry on the basis of the measurement light after the measurement light passes through the sample. The measurement position is changed by, for example, scanning the excitation light, moving the sample, moving a lens that collects the excitation light in the sample so as to change the light-collecting position (focal position) in the sample, etc.
摘要:
A liquid sample is irradiated with excitation light and measurement light, and a measurement position at which a traveling path of the measurement light passes through an excitation section of the excitation light in the sample is changed while the sample is being irradiated with the excitation light and the measurement light. Then, the phase change of the measurement light is measured for each measurement by optical interferometry on the basis of the measurement light after the measurement light passes through the sample. The measurement position is changed by, for example, scanning the excitation light, moving the sample, moving a lens that collects the excitation light in the sample so as to change the light-collecting position (focal position) in the sample, etc.
摘要:
There is provided a photothermal conversion measuring instrument which can measure change in property caused by thermal effect in a sample with high sensitivity and high accuracy by a simple structure. The instrument includes a current control circuit for sequentially switching output light of a plurality of excitation light sources each outputting excitation light having a different wavelength band so that one of the output light is irradiated to the sample, a light detector for interfering measurement light transmitted through the sample with reference light and detecting the intensity of the interference light, and a signal processor for extracting the same cycle components as the switching cycle of the output light switched by the current control circuit from a signal of the interference light intensity obtained from the light detector and for obtaining a difference of signal values corresponding to each of the excitation light based on the extracted signals.
摘要:
A protein having amino acid sequence in SEQ ID NO: 1 of the Sequence Listing derived from human MP52, and a dimer protein thereof. A homodimer protein described above can be obtained by constructing a plasmid containing DNA coding amino acid sequence in SEQ ID NO: 1 of the Sequence Listing with a methionine at the N-terminus, introducing the plasmid into E. coli for transformation, solubilizing inclusion bodies obtained by culturing the transformant, purifying the monomer protein from the solubilized solution, refolding the monomer protein into a dimer protein and purifying the same. The homodimer protein described above is useful as a pharmaceutical composition for treating cartilage and bone diseases.
摘要翻译:衍生自人MP52的序列表的SEQ ID NO:1中具有氨基酸序列的蛋白质及其二聚体蛋白质。 可以通过在N末端构建含有序列表的SEQ ID NO:1的DNA编码氨基酸序列的质粒与甲硫氨酸在N末端引入,将质粒导入大肠杆菌进行转化,从而增溶包涵体 通过培养转化体获得,从溶解的溶液中纯化单体蛋白质,将单体蛋白重折叠成二聚体蛋白质并进行纯化。 上述同型二聚体蛋白质可用作治疗软骨和骨疾病的药物组合物。
摘要:
A method for cleaning a semiconductor silicon wafer, which can suppress and reduce adhesion of particles to the surface of the wafer, is disclosed. The method includes the steps of cleaning the semiconductor silicon wafer by using hydrofluoric acid aqueous solution containing a surfactant, and thereafter rinsing the semiconductor silicon wafer by using pure water containing ozone.