摘要:
A method for performing optical adjustments of an exposure apparatus is based on an exposure apparatus having a light source for generating illumination light for exposure, and illumination optics for irradiating a mask with the illumination light generated from the exposure light source so as to imprint a mask pattern on a substrate base. The apparatus uses a wide bandwidth light source for the exposure light source that produces exposure light and non-exposure light having wavelengths different from those in the exposure light, and optical adjustments for optical components in at least a portion of the illumination optics are performed by using non-exposure light
摘要:
An exposure apparatus is provided wherein an illumination beam emitted from a mask is projected onto a substrate, through a projection optical system having a reflecting optical element that includes a reflecting region for reflecting the illumination beam at a position spaced from an optical axis of the projection optical system, and a space portion that is provided on the side of the optical axis with respect to the reflecting region. The apparatus further includes a position detecting device for detecting position information of the substrate, at least part of which is located in the space of the reflecting optical element.
摘要:
While a current photosensitive substrate is being exposed on a substrate stage, the next photosensitive substrate for exposure is loaded on a temperature-adjustment plate for a predetermined time to remove a quantity of heat corresponding to a heat accumulation on the substrate stage during exposure. A substrate transporting system carries and loads the next photosensitive substrate, which has been cooled by the temperature-adjustment plate, onto the substrate stage. A pattern image of a mask is exposed and transferred onto the next photosensitive substrate through a projection optical system.
摘要:
In an alignment apparatus for aligning a mask and a photosensitive substrate (a semiconductor wafer or glass plate applied with a photoresist), and which is suitably used in a projection exposure apparatus (a stepper or aligner), a proximity exposure apparatus, or the like used in a lithography process in the manufacture of a semiconductor element or a liquid crystal display element, two first beams and two second beams differing from the first beams may be radiated on a diffraction grating-like mask mark and a diffraction grating-like substrate mark, respectively, with the two second beams passing through a transparent region adjacent to the mask mark. By detecting diffracted light components of the two first beams and detecting diffracted light components of the two second beams, a relative position shift between the mask and the substrate can be determined. The alignment apparatus advantageously can reduce mixing of alignment light from a mask and alignment light from a wafer (substrate) to a minimum degree, or can sufficiently separate signals corresponding to these light components in a signal processing stage even when mixing inevitably occurs.
摘要:
Two-colored illumination light emitted from first and second laser beam sources illuminates a reticle mark and a wafer mark. Diffraction light from the reticle mark and the wafer mark is received by two photoelectric detection elements, respectively. The one photoelectric element receives single-colored diffraction light from light of the first light source through a color filter to generate a reticle beat signal. The other photoelectric element receives two-colored light to generate a wafer beat signal. A phase difference between the reticle beat signal and the wafer beat signal when shutting off the second laser beam source is aligned with a phase difference between the two signals produced when turning on the second laser beam source and decreasing the power of the first laser light source.
摘要:
A scanning exposure apparatus has a mask (reticle) and a photosensitive substrate (a wafer) in an imaging relationship across a projection optical system. A mask stage and a wafer stage are moved simultaneously in first (X) direction with a speed ratio corresponding to the magnification of projection, so that a shot area of the photosensitive substrate is scan-exposed to an original pattern of the mask.The mask is provided, over the scanning range of the original pattern, with mask gratings, each composed of plural grating elements arranged at a predetermined pitch along the first (X) direction. The photosensitive substrate is provided with substrate gratings corresponding to said mask gratings. The positional aberration between said mask gratings and the substrate gratings is detected, through the projection optical system, by positional aberration detecting means.At the scanning exposure, either of the mask stage and the substrate stage is driven in the first (X) direction at a constant speed, by first drive control means. The other stage is controlled by second drive control means in such a manner that the relative positional aberration detected by the positional aberration detecting means in the course of movement of the stage, driven by the first drive control means, remains at a predetermined value.
摘要:
An aligning device for aligning a substrate with a predetermined point on the basis of a detection signal from a photoelectric detector uses interference light generated by light diffracted from a diffraction grating. A calculating device calculates at least one of a crossing angle of two coherent beams irradiating the grating and the rotational error of a crossing line between a plane containing principal rays of the beams and the surface of the substrate, with respect to the direction of arrangement of the grating, based on the phase difference between detection signals of the photoelectric detector corresponding to interference light generated from different portions of the crossing area. The output of the calculating device may be used to adjust the crossing angle and/or to correct the rotational error.
摘要:
A method of determining regularity of a pattern array on a substrate to enable sequential positioning of patterns of the array relative to a reference position includes the step of calculating a reliability degree regarding a measured value of a pattern position, and the step of determining the regularity of the pattern array on the basis of the calculated reliability degree, and a design value and the measured value of the pattern position.
摘要:
On sequentially transferring patterns formed on a mask onto a plurality of divided areas on a substrate, when a new divided area on the substrate exposed, the substrate is moved from the exposure position of the preceding divided area to the exposure position of the new divided area in consideration of thermal expansion of the substrate at this stage. Thereafter, the mask pattern is transferred onto the predetermined divided area. With this process, exposure is performed with the respective shot areas arranged on the substrate at a desired interval in a cooled state after exposure. This makes it possible to improve the overlay accuracy with respect to the subsequent layer while performing exposure with high overlay accuracy with respect to the preceding layer.
摘要:
An exposure method according to the present invention includes a first step of forming on a substrate an alignment mark including a concave and convex pattern; a second step of forming a coat over said alignment mark and the other area on said substrate; a third step of flattening said coat; and a fourth step of applying a photosensitive material on said coat flattened by said third step and projecting a mask pattern thereto. The alignment mark is formed by said concave and convex pattern arranged with a pitch which is smaller than the predetermined value between adjacent convex portions having a width of not less than a predetermined value.