摘要:
A gas reaction apparatus has an activation chamber, a heat exchanger and a reaction chamber. A gas is introduced into the activation chamber and activated there by electric discharge. The activated gas is then cooled by the heat exchanger in case a reaction to be effected in the reaction chamber is exothermic or heated by the exchanger in case a reaction to be effected in the reaction chamber is endothermic. The heat resulting from the reaction with the gas can therefore be effectively removed so that a desired reaction is rapidly conducted in the reaction chamber without being followed by a side reaction.
摘要:
An activated gas reaction apparatus which comprises an activation chamber; feeding means for conducting feed gas into the activation chamber; microwave power-generating means for activating raw gas received in the activation chamber; and a reaction chamber provided apart from the activation chamber for reaction of activated gas, the activated gas reaction apparatus so constructed as to satisfy the following formula:2.pi.fpl .gtoreq. 4 .times. 10.sup.9wheref = frequency (Hz) of microwavesp = gas pressure (torr) in the activation chamberL = length (cm) of the activation chamber extending in the direction in which the electromagnetic field provided by the microwave source is applied.
摘要:
A polishing pad has a polishing layer including a non-foamed polyurethane, wherein the non-foamed polyurethane is a reaction cured body of a polyurethane raw material composition containing an isocyanate-terminated prepolymer obtained by reacting a prepolymer raw material composition containing a diisocyanate, a high-molecular-weight polyol and a low-molecular-weight polyol; an isocyanate modified body polymerized by adding three or more diisocyanates; and a chain extender, and the addition amount of the isocyanate-modified body is 5 to 30 parts by weight with respect to 100 parts by weight of the isocyanate-terminated prepolymer. The polishing pad hardly causes scratches on the surface of an object to be polished and has an improved dressing property.
摘要:
A polishing pad has a polishing layer including a non-foamed polyurethane, wherein the non-foamed polyurethane is a reaction cured body of a polyurethane raw material composition containing an isocyanate-terminated prepolymer obtained by reacting a prepolymer raw material composition containing a diisocyanate, a high-molecular-weight polyol and a low-molecular-weight polyol; an isocyanate modified body polymerized by adding three or more diisocyanates; and a chain extender, and the addition amount of the isocyanate-modified body is 5 to 30 parts by weight with respect to 100 parts by weight of the isocyanate-terminated prepolymer. The polishing pad hardly causes scratches on the surface of an object to be polished and has an improved dressing property.
摘要:
A communications system and method, an information processing apparatus and method, an information management apparatus and method, a recording medium and a program make it possible to efficiently and comfortably make use of contents, which are stored in one server, from a plurality of devices connected via a network. In a case in which the playing of content is stopped, bookmark information including a time stamp representing the stopped position of the content is stored in association with predetermined identification information. The bookmark information is available for various apparatuses transmitting the identification information. When playing the content from a position designated by the information from a predetermined apparatus, the time stamp included in the bookmark information is referred to and the playing of the content from the stopped position is started. The present invention can be applied to various apparatuses such as a personal computer, audio equipment, a PDA, a mobile phone and the like.
摘要:
A polishing pad having excellent planarization performance and wear resistance includes a polishing layer including a polyurethane foam having fine cells. The polyurethane foam is a cured product of a reaction of (1) an isocyanate-terminated prepolymer (A) that is capable of reacting with 4,4′-methylenebis(o-chloroaniline) to form a non-foamed polyurethane having a tan δ peak temperature of 100° C. or more, (2) an isocyanate-terminated prepolymer (B) that is capable of reacting with 4,4′-methylenebis(o-chloroaniline) to form a non-foamed polyurethane having a tan δ peak temperature of 40° C. or less, and (3) 4,4′-methylenebis(o-chloroaniline), and the isocyanate-terminated prepolymers (A) and (B) are mixed in an (A)/(B) ratio of 50/50 to 90/10 (by wt%). The pad so made is used in the manufacture of semiconductor devices.
摘要:
The invention provides a polishing pad by which optical materials such as lenses, reflecting mirrors etc., or materials requiring a high degree of surface planarity, as in the polishing of silicone wafers, glass substrates or aluminum substrates for hard disks, or general metal polishing, can be flattened with stability and high polishing efficiency. The invention also provides a polishing pad for semiconductor wafers, which is superior in planarizing characteristic, is free from scratches and can be produced at low cost. There is provided a polishing pad which is free from dechucking error so that neither damage to wafers nor decrease in operating efficiency occurs. There is provided a polishing pad which is satisfactory in planarity, within wafer uniformity, and polishing rate and produces less change in polishing rate. There is provided a polishing pad which can make planarity improvement and scratch decrease compatible.
摘要:
It is an object of the invention to provide a polishing pad capable of high precision optical detection of an endpoint during polishing in progress and prevention of slurry leakage from between a polishing region and a light-transmitting region during the use thereof even after the polishing pad has been used for a long period. It is a second object of the invention to provide a polishing pad capable of suppression of deterioration of polishing characteristics (such as in-plane uniformity) and generation of scratches due to a difference in behavior of a polishing region and a light-transmitting region during polishing. It is a third object of the invention to provide a polishing pad having a polishing region and a light-transmitting region with a concentration of a specific metal equal to or lower than a specific value (threshold value).
摘要:
The present invention provides a thermomechanical treatment means for a Fe—Mn—Si-based shape memory alloy having specified components with Nb, C addition with simple deformation prior to aging. Such deformation treatment prior to aging is carried out in the inventions of the prior applications in a temperature range of from 500° C. to 800° C. According to the present invention, however, the deformation treatment prior to the aging treatment can be successfully carried out not at high temperature but at room temperature, if the deformation ratio is in a specified range. The technical meaning of the present invention must be clearly understood as compared to the prior art and the inventions of the prior applications because the present invention allows the treatment at room temperature while the others require troublesome treatment at high temperature so that there is significant difference therebetween. That is, according to the present invention, the remarkable improvement in shape memory property is achieved first time by a combination of specified alloy components, specified deformation ratio at room temperature, and setting of aging condition to a certain range. With the development of the present invention, it is expected that the use of shape memory alloys will be accelerated toward the practical use in a wide variety of fields.
摘要:
The invention provides a polishing pad by which optical materials such as lenses, reflecting mirrors etc., or materials requiring a high degree of surface planarity, as in the polishing of silicone wafers, glass substrates or aluminum substrates for hard disks, or general metal polishing, can be flattened with stability and high polishing efficiency. The invention also provides a polishing pad for semiconductor wafers, which is superior in planarizing characteristic, is free from scratches and can be produced at low cost. There is provided a polishing pad which is free from dechucking error so that neither damage to wafers nor decrease in operating efficiency occurs. There is provided a polishing pad which is satisfactory in planarity, within wafer uniformity, and polishing rate and produces less change in polishing rate. There is provided a polishing pad which can make planarity improvement and scratch decrease compatible.