公开(公告)号：US20120045380A1

公开(公告)日：2012-02-23

申请号：US13319190

申请日：2010-10-05

申请人： Kazuyuki Satoh ,  Yoshimasa Koido

发明人： Kazuyuki Satoh ,  Yoshimasa Koido

IPC分类号： C01F17/00 ,  C23C14/08 ,  B65B31/02 ,  C23C14/34

CPC分类号： C23C14/3407 ,  C04B35/50 ,  C23C14/3414

摘要： A method of storing a sputtering target made of lanthanum oxide, wherein a lanthanum oxide target to which a lanthanum fluoride film was formed and lanthanum oxide powder are charged in a vacuum pack with an oxygen transmission rate of 0.1 cm3/m2 per 24 h at 1 atm or less and a moisture vapor transmission rate of 0.1 g/m2 per 24 h or less, and, after charging the target and the powder, the vacuum pack is subject to vacuum suction and sealing for storage. This invention aims to provide technology for enabling the long-term storage of a sputtering target in a usable state by devising the method of storing a target made of an oxide of lanthanum as a rare earth metal, and thereby inhibiting the pulverization phenomenon of the target caused by the hydration (hydroxylation) of such target due to residual air or the inclusion of air, and the pulverization phenomenon caused by the formation of carbonate.

摘要翻译： 一种存储由氧化镧制成的溅射靶的方法，其中将形成有氟化镧薄膜的氧化镧靶标和氧化镧粉末在氧气透过率为0.1cm 3 / m 2/24小时的真空包装中装入1 atm以下，每24小时以上的湿气透过率为0.1g / m 2，并且在对靶和粉末进行充电之后，将真空包装真空抽吸并密封保存。 本发明的目的在于提供一种用于通过设计存储由稀土金属的镧氧化物制成的靶的方法，从而能够使溅射靶长期储存在可使用状态的技术，从而抑制靶的粉碎现象 由于残留空气或包含空气的这种目标物的水合（羟基化）引起的，以及由碳酸盐形成引起的粉碎现象。

公开(公告)号：US20110162322A1

公开(公告)日：2011-07-07

申请号：US13119377

申请日：2009-10-23

申请人： Kazuyuki Satoh ,  Yoshimasa Koido

发明人： Kazuyuki Satoh ,  Yoshimasa Koido

IPC分类号： B65B31/02

CPC分类号： C23C14/3407 ,  C23F15/00

摘要： Provided is a method for storing a target comprising a rare earth metal or oxide thereof, wherein oxide of the same rare earth metal as the material of the rare earth metal or its oxide target to be stored is introduced as a desiccant into a container or a film-type seal for storing the target, and the target is stored by sealing the storage container or the film-type seal. This invention aims to provide technology for enabling the long-term storage of a target by devising the method for storing a target comprising a rare earth metal or oxide thereof, and thereby inhibiting the pulverization of the target caused by the oxidation and hydroxylation of such target due to the ingress of air.

摘要翻译： 提供了一种存储包含稀土金属或其氧化物的靶的方法，其中将与要存储的稀土金属或其氧化物靶材相同的稀土金属的氧化物作为干燥剂引入容器或 用于储存目标的薄膜式密封件，并且通过密封储存容器或薄膜型密封件来储存目标物。 本发明的目的在于提供一种用于通过设计包含稀土金属或其氧化物的靶的方法来实现目标的长期储存的技术，从而抑制由该靶的氧化和羟基化引起的靶的粉碎 由于空气进入。

公开(公告)号：US08911600B2

公开(公告)日：2014-12-16

申请号：US13319190

申请日：2010-10-05

申请人： Kazuyuki Satoh ,  Yoshimasa Koido

发明人： Kazuyuki Satoh ,  Yoshimasa Koido

IPC分类号： C23C14/00 ,  C23C14/34 ,  C04B35/50

CPC分类号： C23C14/3407 ,  C04B35/50 ,  C23C14/3414

摘要： A method of storing a sputtering target made of lanthanum oxide, wherein a lanthanum oxide target to which a lanthanum fluoride film was formed and lanthanum oxide powder are charged in a vacuum pack with an oxygen transmission rate of 0.1 cm3/m2 per 24 h at 1 atm or less and a moisture vapor transmission rate of 0.1 g/m2 per 24 h or less, and, after charging the target and the powder, the vacuum pack is subject to vacuum suction and sealing for storage. This invention aims to provide technology for enabling the long-term storage of a sputtering target in a usable state by devising the method of storing a target made of an oxide of lanthanum as a rare earth metal, and thereby inhibiting the pulverization phenomenon of the target caused by the hydration (hydroxylation) of such target due to residual air or the inclusion of air, and the pulverization phenomenon caused by the formation of carbonate.

摘要翻译： 一种存储由氧化镧制成的溅射靶的方法，其中将形成有氟化镧薄膜的氧化镧靶标和氧化镧粉末在氧气透过率为0.1cm 3 / m 2/24小时的真空包装中装入1 atm以下，每24小时以上的湿气透过率为0.1g / m 2，并且在对靶和粉末进行充电之后，将真空包装真空抽吸并密封保存。 本发明的目的在于提供一种用于通过设计存储由稀土金属的镧氧化物制成的靶的方法，从而能够使溅射靶长期储存在可使用状态的技术，从而抑制靶的粉碎现象 由于残留空气或包含空气的这种目标物的水合（羟基化）引起的，以及由碳酸盐形成引起的粉碎现象。

公开(公告)号：US20130277214A1

公开(公告)日：2013-10-24

申请号：US13996169

申请日：2012-02-13

申请人： Satoyasu Narita ,  Kazuyuki Satoh ,  Yoshimasa Koido

发明人： Satoyasu Narita ,  Kazuyuki Satoh ,  Yoshimasa Koido

IPC分类号： C23C14/34 ,  B65B5/00

CPC分类号： C23C14/3407 ,  B65B5/00 ,  C23C14/3414

摘要： A method of storing a metal lanthanum sputtering target, wherein a surface of a metal lanthanum target to be stored is processed so as to achieve a roughness Ra of 1 μm or less, a lanthanum fluoride coating is formed on the surface thereof, the metal lanthanum target to which the lanthanum fluoride coating was formed is subsequently charged in a vacuum pack with an oxygen transmission rate of 0.1 cm3/m2 per 24 h at 1 atm or less and a moisture vapor transmission rate of 0.1 g/m2 per 24 h or less, and the vacuum pack is thereafter subject to vacuum suction and sealing for storage. This invention aims to provide technology for enabling the long-term storage of a sputtering target in a usable state by devising the method of storing a metal lanthanum target as a rare earth metal, and thereby inhibiting the degradation phenomenon caused by the oxidation of the target due to residual air or the inclusion of air.

摘要翻译： 一种金属镧溅射靶的储存方法，其特征在于，对所述被保存金属镧靶的表面进行加工，以达到1μm以下的粗糙度Ra，在其表面形成氟化镧涂层，所述金属镧 随后将其中形成氟化镧涂层的目标装入真空包装中，每1小时或以下，每24小时的氧气透过率为0.1cm 3 / m 2，每24小时或更少的湿气透过率为0.1g / m 2 ，然后将真空包装真空抽吸并密封保存。 本发明的目的在于提供一种技术，通过设计存储金属镧靶作为稀土金属的方法，能够使溅射靶长期保存在可使用状态，从而抑制靶的氧化引起的劣化现象 由于残留空气或包含空气。

公开(公告)号：US08236428B2

公开(公告)日：2012-08-07

申请号：US13002928

申请日：2009-06-23

申请人： Kazuyuki Satoh ,  Yoshimasa Koido

发明人： Kazuyuki Satoh ,  Yoshimasa Koido

IPC分类号： G11B11/105 ,  B32B9/04 ,  B32B13/04 ,  B32B37/00 ,  B32B38/04 ,  B29C65/00

CPC分类号： C30B29/06 ,  C30B23/02 ,  C30B28/00 ,  C30B33/00 ,  C30B33/06 ,  H01L21/187 ,  Y10T156/1052 ,  Y10T428/26 ,  Y10T428/31663

摘要： Provided is a hybrid silicon wafer comprising a structure in which a single-crystal wafer is embedded in a sintered polysilicon wafer. Also provided is a method for manufacturing a hybrid silicon wafer having a structure in which a single-crystal wafer is embedded in a sintered polysilicon wafer, wherein a part of the sintered polysilicon is hollowed, a single crystal ingot is inserted into the hollowed portion, these are mutually bonded through thermal diffusion bonding based on HIP to prepare a complex of the sintered polysilicon and the single-crystal silicon ingot, and the complex is sliced. Thereby provided are a hybrid silicon wafer comprising functions of both the polysilicon wafer and the single-crystal wafer, and a method for manufacturing such a hybrid silicon wafer.

摘要翻译： 提供了一种混合硅晶片，其包括将单晶晶片嵌入烧结多晶硅晶片中的结构。 还提供了一种用于制造具有单晶晶片嵌入烧结多晶硅晶片的结构的混合硅晶片的方法，其中一部分烧结多晶硅被中空化，单晶锭插入到中空部分中， 这些通过基于HIP的热扩散接合相互结合以制备烧结多晶硅和单晶硅锭的复合物，并将复合物切片。 由此提供了包括多晶硅晶片和单晶晶片的功能的混合硅晶片，以及用于制造这种混合硅晶片的方法。

公开(公告)号：US20110123795A1

公开(公告)日：2011-05-26

申请号：US13002928

申请日：2009-06-23

申请人： Kazuyuki Satoh ,  Yoshimasa Koido

发明人： Kazuyuki Satoh ,  Yoshimasa Koido

IPC分类号： B32B17/00 ,  B32B37/00

CPC分类号： C30B29/06 ,  C30B23/02 ,  C30B28/00 ,  C30B33/00 ,  C30B33/06 ,  H01L21/187 ,  Y10T156/1052 ,  Y10T428/26 ,  Y10T428/31663

摘要： Provided is a hybrid silicon wafer comprising a structure in which a single-crystal wafer is embedded in a sintered polysilicon wafer. Also provided is a method for manufacturing a hybrid silicon wafer having a structure in which a single-crystal wafer is embedded in a sintered polysilicon wafer, wherein a part of the sintered polysilicon is hollowed, a single crystal ingot is inserted into the hollowed portion, these are mutually bonded through thermal diffusion bonding based on HIP to prepare a complex of the sintered polysilicon and the single-crystal silicon ingot, and the complex is sliced. Thereby provided are a hybrid silicon wafer comprising functions of both the polysilicon wafer and the single-crystal wafer, and a method for manufacturing such a hybrid silicon wafer.

摘要翻译： 提供了一种混合硅晶片，其包括将单晶晶片嵌入烧结多晶硅晶片中的结构。 还提供了一种用于制造具有单晶晶片嵌入烧结多晶硅晶片的结构的混合硅晶片的方法，其中一部分烧结多晶硅被中空化，单晶锭插入到中空部分中， 这些通过基于HIP的热扩散接合相互结合以制备烧结多晶硅和单晶硅锭的复合物，并将复合物切片。 由此提供了包括多晶硅晶片和单晶晶片的功能的混合硅晶片，以及用于制造这种混合硅晶片的方法。

公开(公告)号：US20110114482A1

公开(公告)日：2011-05-19

申请号：US13002733

申请日：2009-06-23

申请人： Kazuyuki Satoh ,  Yoshimasa Koido

发明人： Kazuyuki Satoh ,  Yoshimasa Koido

IPC分类号： C23C14/08 ,  C04B35/645

CPC分类号： C23C14/08 ,  C04B35/486 ,  C04B35/50 ,  C04B35/645 ,  C04B2235/3227 ,  C04B2235/3244 ,  C04B2235/442 ,  C04B2235/656 ,  C04B2235/6581 ,  C04B2235/72 ,  C04B2235/721 ,  C04B2235/724 ,  C04B2235/726 ,  C04B2235/727 ,  C04B2235/77 ,  C04B2235/782 ,  C04B2235/786 ,  C04B2235/9684 ,  C04B2235/9692 ,  C23C14/3414

摘要： An oxide sintered compact composed of a composite oxide of lanthanum and hafnium, wherein the amount of hafnium contained in the sintered compact is equivalent or more relative to the lanthanum. A method of producing an oxide sintered compact of lanthanum and hafnium, wherein La2(CO3)3 powder and HfO2 powder are used as raw material powder, blending and mixing are performed so that the composition molar ratio of Hf and La becomes 1 to 1.2, the mixed powder is thereafter heated and synthesized in the atmosphere, the synthesized material is subsequently pulverized to obtain powder, and the synthesized powder is thereafter hot pressed into a sintered compact. Since metal lanthanum rapidly bonds with oxygen and decays, and lanthanum oxide bonds with moisture and forms a hydroxide and changes into powder form, there is a problem in that long-term storage is difficult and a sputtering target cannot be used for a practical use. In light of these points, provided is a stable La-containing oxide sintered compact composed of oxides of lanthanum (La) and hafnium (Hf), and in particular provided is a La-containing oxide sputtering target that is suitable for forming a high-k gate insulating film.

摘要翻译： 由镧和铪的复合氧化物构成的氧化物烧结体，其中烧结体中所含的铪的量相对于镧相当于或更多。 使用La2（CO3）3粉末和HfO2粉末作为原料粉末的掺镧和铪氧化物烧结体的制造方法，使Hf和La的组成摩尔比为1〜1.2， 然后将混合粉末在大气中加热合成，然后将合成的材料粉碎，得到粉末，然后将合成的粉末热压成烧结体。 由于金属镧与氧气快速键合并且衰变，并且氧化镧与水分键合并形成氢氧化物并变成粉末形式，所以存在长期储存困难且溅射靶不能用于实际应用的问题。 根据这些要点，提供了由镧（La）和铪（Hf）的氧化物构成的稳定的含La氧化物烧结体，特别是提供适于形成高分子化合物的含La氧化物溅射靶， k栅极绝缘膜。

公开(公告)号：US20110114481A1

公开(公告)日：2011-05-19

申请号：US13002577

申请日：2009-06-23

申请人： Kazuyuki Satoh ,  Yoshimasa Koido

发明人： Kazuyuki Satoh ,  Yoshimasa Koido

IPC分类号： C04B35/645 ,  C23C14/08

CPC分类号： C23C14/3414 ,  C04B35/462 ,  C04B35/486 ,  C04B35/49 ,  C04B35/50 ,  C04B35/645 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/442 ,  C04B2235/656 ,  C04B2235/6581 ,  C04B2235/721 ,  C04B2235/77 ,  C04B2235/782 ,  C04B2235/786 ,  C04B2235/9669 ,  C23C14/08 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/02266 ,  H01L21/28194 ,  H01L29/517

摘要： A lanthanum oxide-based sintered compact having lanthanum oxide as a basic component, wherein the sintered compact contains one or more of titanium oxide, zirconium oxide and hafnium oxide with the remainder being lanthanum oxide and unavoidable impurities. A method of producing a lanthanum oxide-based sintered compact, wherein La2(CO3)3 powder or La2O3 powder as lanthanum oxide raw material powder and one or more of TiO2, ZrO2 and HfO2 powders as an additive oxide are used, blending and mixing are performed so that the composition ratio of metal components of the additive oxide becomes a predetermined value based on the metal conversion, the mixed powder is thereafter heated and synthesized in the atmosphere, the synthesized material is subsequently pulverized to obtain powder, and the synthesized powder is thereafter hot pressed into a sintered compact. This invention prevents the sintered compact from combining with moisture or carbon dioxide gas to form hydroxide or the like and changing into powder form, and enables the long term storage thereof. Moreover, as a result of performing deposition with this sputtering target, oxide for use in a high-k gate insulator film can be efficiently and stably provided.

摘要翻译： 一种氧化镧作为碱性成分的氧化镧系烧结体，其中，烧结体含有氧化钛，氧化锆，氧化铪中的一种以上，余量为氧化镧和不可避免的杂质。 使用其中使用La 2（CO 3）3粉末或La 2 O 3粉末作为氧化镧原料粉末和一种或多种TiO 2，ZrO 2和HfO 2粉末作为添加剂氧化物的方法，混合和混合 进行使得氧化物添加剂氧化物的金属成分的组成比例成为基于金属转化率的预定值，然后将混合粉末在大气中加热合成，然后将合成的材料粉碎，得到粉末，合成的粉末为 然后热压成烧结体。 本发明防止烧结体与水分或二氧化碳气体结合形成氢氧化物等并变成粉末形式，并能够长期储存。 此外，作为利用该溅射靶进行沉积的结果，可以有效且稳定地提供用于高k栅绝缘膜的氧化物。

公开(公告)号：US09062371B2

公开(公告)日：2015-06-23

申请号：US13510065

申请日：2010-10-04

申请人： Yoshimasa Koido

发明人： Yoshimasa Koido

IPC分类号： C23C14/34 ,  B32B15/01 ,  C21D9/00 ,  C22C9/00 ,  C22C19/03 ,  C22C23/00 ,  C22F1/02 ,  C22F1/08 ,  H01J37/34

CPC分类号： C23C14/3407 ,  B32B15/01 ,  C21D9/0068 ,  C22C9/00 ,  C22C19/03 ,  C22C23/00 ,  C22F1/02 ,  C22F1/08 ,  C23C14/3414 ,  H01J37/3414 ,  H01J37/3435 ,  H01J37/3491

摘要： A sputtering target-backing plate assembly obtained by bonding a target material of Mg to a backing plate of Cu—Cr alloy, wherein the target material and the backing plate are bonded via a layer of Ni or an alloy comprising Ni as a main component at the interface therebetween. An object of the present invention is to provide a sputtering target-backing plate assembly that is used when magnesium (Mg) is the sputtering target material, and to resolve problems inherent in magnesium (Mg) and problems related to the selection of a backing plate to be compatible with magnesium by improving the bonding strength between the target and the backing plate in order to improve the sputtering efficiency.

摘要翻译： 通过将Mg的靶材与Cu-Cr合金的背板接合而获得的溅射靶 - 背板组件，其中，目标材料和背板通过Ni或包含Ni作为主要成分的合金层接合 它们之间的界面。 本发明的目的是提供一种当镁（Mg）是溅射靶材料时使用并且解决镁（Mg）中固有的问题以及与背板选择有关的问题时使用的溅射靶 - 背板组件 通过提高靶和背板之间的结合强度来与镁相容，以提高溅射效率。

公开(公告)号：US20120228132A1

公开(公告)日：2012-09-13

申请号：US13510065

申请日：2010-10-04

申请人： Yoshimasa Koido

发明人： Yoshimasa Koido

IPC分类号： C23C14/34 ,  B23K31/00

CPC分类号： C23C14/3407 ,  B32B15/01 ,  C21D9/0068 ,  C22C9/00 ,  C22C19/03 ,  C22C23/00 ,  C22F1/02 ,  C22F1/08 ,  C23C14/3414 ,  H01J37/3414 ,  H01J37/3435 ,  H01J37/3491

摘要： A sputtering target-backing plate assembly obtained by bonding a target material of Mg to a backing plate of Cu—Cr alloy, wherein the target material and the backing plate are bonded via a layer of Ni or an alloy comprising Ni as a main component at the interface therebetween. An object of the present invention is to provide a sputtering target-backing plate assembly that is used when magnesium (Mg) is the sputtering target material, and to resolve problems inherent in magnesium (Mg) and problems related to the selection of a backing plate to be compatible with magnesium by improving the bonding strength between the target and the backing plate in order to improve the sputtering efficiency.

摘要翻译： 通过将Mg的靶材与Cu-Cr合金的背板接合而获得的溅射靶 - 背板组件，其中，目标材料和背板通过Ni或包含Ni作为主要成分的合金层接合 它们之间的界面。 本发明的目的是提供一种当镁（Mg）是溅射靶材料时使用的溅射靶 - 背板组件，并且解决镁（Mg）中固有的问题以及与背板的选择有关的问题 通过提高靶和背板之间的结合强度来与镁相容，以提高溅射效率。