公开(公告)号：US06352865B1

公开(公告)日：2002-03-05

申请号：US09742221

申请日：2000-12-22

申请人： Kee Jeung Lee ,  Dong Jun Kim

发明人： Kee Jeung Lee ,  Dong Jun Kim

IPC分类号： H01G706

摘要： The present invention discloses a method for fabricating a capacitor for a semiconductor device. The method includes the steps of: forming a lower electrode at the upper portion of a semiconductor substrate where a predetermined structure has been formed; forming an amorphous (Ta2O5)1−x—(TiO2)x film on the lower electrode; performing a thermal treatment on the amorphous (Ta2O5)1−x—(TiO2)x film; and forming an upper electrode on the amorphous (Ta2O5)1−x—(TiO2)x film. A capacitance for the operation of a high integration device is sufficiently obtained by using the (Ta2O5)1−x—(TiO2)x film having a high dielectric constant, thereby fabricating the capacitor suitable for the high integration semiconductor device.

公开(公告)号：US06770525B2

公开(公告)日：2004-08-03

申请号：US09751453

申请日：2001-01-02

申请人： Kee Jeung Lee ,  Dong Jun Kim

发明人： Kee Jeung Lee ,  Dong Jun Kim

IPC分类号： H01L218242

CPC分类号： H01L28/40 ,  H01L21/02183 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02315 ,  H01L21/02337 ,  H01L21/02356 ,  H01L21/3145 ,  H01L27/1085

摘要： Disclosed is a method for fabricating capacitors for semiconductor devices. This method includes the steps of forming a lower electrode on an understructure of a semiconductor substrate, depositing an amorphous TaON thin film over the lower electrode, annealing the deposited amorphous TaON thin film in an NH3 atmosphere, and repeating the deposition of the amorphous TaON thin film and the annealing of the deposited amorphous TaON thin film at least one time, thereby forming a TaON dielectric film having a multi-layer structure, and forming an upper electrode over the TaON dielectric film. The TaON dielectric film having a multi-layer structure exhibits a dielectric constant that is superior to those of conventional dielectric films. Accordingly, the TaON dielectric film of the invention can be used for capacitors in next generation semiconductor memory devices of grade 256 MB and higher.

摘要翻译： 公开了一种用于制造用于半导体器件的电容器的方法。 该方法包括以下步骤：在半导体衬底的下部结构上形成下电极，在下电极上沉积无定形TaON薄膜，在NH 3气氛中对沉积的非晶态TaON薄膜进行退火，并重复沉积无定形TaON薄膜 膜和沉积的非晶形TaON薄膜的退火至少一次，从而形成具有多层结构的TaON介电膜，并在TaON绝缘膜上形成上电极。 具有多层结构的TaON介电膜表现出优于常规电介质膜的介电常数。 因此，本发明的TaON电介质膜可以用于256MB及以上的下一代半导体存储器件中的电容器。

公开(公告)号：US06576528B1

公开(公告)日：2003-06-10

申请号：US09607130

申请日：2000-06-28

申请人： Kee Jeung Lee ,  Dong Jun Kim

发明人： Kee Jeung Lee ,  Dong Jun Kim

IPC分类号： H01L2120

CPC分类号： H01L21/3145 ,  C23C16/308 ,  H01L28/40 ,  H01L28/84 ,  H01L28/90

摘要： Disclosed are a capacitor for semiconductor devices capable of increasing storage capacitance and preventing leakage current, and method of manufacturing the same. The capacitor for semiconductor memory devices according to the present invention includes: a lower electrode; a dielectric layer formed on the lower electrode; and an upper electrode formed on the upper portion of the dielectric layer, wherein the dielectric layer is a crystalline TaxOyNz layer, and the total of x, y, and z in the crystalline TaxOyNz layer is 1, and y is 0.3 to 0.5, and z is 0.1 to 0.3.

摘要翻译： 公开了一种能够增加存储电容并防止漏电流的半导体器件的电容器及其制造方法。 根据本发明的用于半导体存储器件的电容器包括：下电极; 形成在下电极上的电介质层; 以及形成在电介质层的上部的上电极，其中电介质层是结晶的TaxOyNz层，并且结晶TaxOyNz层中的x，y和z的总和为1，y为0.3至0.5，并且 z为0.1〜0.3。

公开(公告)号：US06746931B2

公开(公告)日：2004-06-08

申请号：US10423873

申请日：2003-04-28

申请人： Kee Jeung Lee ,  Dong Jun Kim

发明人： Kee Jeung Lee ,  Dong Jun Kim

IPC分类号： H01L2120

CPC分类号： H01L21/3145 ,  C23C16/308 ,  H01L28/40 ,  H01L28/84 ,  H01L28/90

摘要： Disclosed are a capacitor for semiconductor devices capable of increasing storage capacitance and preventing leakage current, and method of manufacturing the same. The capacitor for semiconductor memory devices according to the present invention includes: a lower electrode; a dielectric layer formed on the lower electrode; and an upper electrode formed on the upper portion of the dielectric layer, wherein the dielectric layer is a crystalline TaxOyNz layer, and the total of x, y, and z in the crystalline TaxOyNz layer is 1, and y is 0.3 to 0.5, and z is 0.1 to 0.3.

摘要翻译： 公开了一种能够增加存储电容并防止漏电流的半导体器件的电容器及其制造方法。 根据本发明的用于半导体存储器件的电容器包括：下电极; 形成在下电极上的电介质层; 以及形成在电介质层的上部的上电极，其中电介质层是结晶的TaxOyNz层，并且结晶TaxOyNz层中的x，y和z的总和为1，y为0.3至0.5，并且 z为0.1〜0.3。

公开(公告)号：US06448128B1

公开(公告)日：2002-09-10

申请号：US09607290

申请日：2000-06-30

申请人： Kee Jeung Lee ,  Dong Jun Kim

发明人： Kee Jeung Lee ,  Dong Jun Kim

IPC分类号： H01L8242

CPC分类号： H01L28/40 ,  H01L21/3145 ,  H01L27/10852 ,  H01L28/84 ,  H01L28/91

摘要： Disclosed are a capacitor for semiconductor capable of increasing storage capacitance as well as preventing leakage current and a method of manufacturing the same. According to the present invention. A lower electrode is formed on a semiconductor substrate. The surface of the lower electrode is surface-treated so as to prevent a natural oxide layer from generating on the surface thereof. A (TaO)1-x(TiO)N layer as a dielectric is deposited on the upper part of the lower electrode. Afterwards, to crystallize the (TaO)1-x(TiO)N layer, a thermal-treatment is performed. Next, an upper electrode is formed on the upper part of the (TaO)1-x(TiO)N layer.

摘要翻译： 公开了一种能够增加存储电容以及防止漏电流的半导体电容器及其制造方法。 根据本发明。 在半导体衬底上形成下电极。 对下电极的表面进行表面处理，以防止在其表面上产生自然氧化物层。 作为电介质的（TaO）1-x（TiO）N层沉积在下电极的上部。 然后，为了使（TaO）1-x（TiO）N层结晶，进行热处理。 接下来，在（TaO）1-x（TiO）N层的上部形成上电极。

公开(公告)号：US06339009B1

公开(公告)日：2002-01-15

申请号：US09708456

申请日：2000-11-09

申请人： Kee Jeung Lee ,  Dong Jun Kim

发明人： Kee Jeung Lee ,  Dong Jun Kim

IPC分类号： H01L2120

CPC分类号： H01L28/55 ,  H01L21/31604 ,  H01L21/31691 ,  H01L28/90

摘要： The present invention discloses a method of manufacturing a capacitor of high capacitance using a (Ta2O5)1−x(TiO2)x thin film as dielectric layer. The method according to the present invention, comprising providing a semiconductor substrate over which selected lower patterns are formed and an intermediate insulating layer is covered; forming a lower electrode on the intermediate insulating layer; depositing a (Ta2O5)1−x—(TiO2)x thin film in an amorphous state on the lower electrode; annealing the amorphous (Ta2O5)1−x—(TiO2)x thin film at a low temperature; annealing the low temperature amorphous (Ta2O5)1−x—(TiO2)x thin film at a high temperature to form a crystalline (Ta2O5)1−x—(TiO2)x thin film as a dielectric layer; and forming an upper electrode on the (Ta2O5)1−x—(TiO2)x thin film.

摘要翻译： 本发明公开了使用（Ta 2 O 5）1-x（TiO 2）x薄膜作为电介质层制造高电容电容器的方法。 根据本发明的方法，包括提供半导体衬底，在其上形成选定的下部图案并覆盖中间绝缘层; 在中间绝缘层上形成下电极; 在下电极上沉积非晶态的（Ta 2 O 5）1-x-（TiO 2）x薄膜; 在低温下退火无定形（Ta2O5）1-x-（TiO2）x薄膜; 在高温下对低温无定形（Ta 2 O 5）1-x-（TiO 2）x薄膜进行退火以形成作为介电层的结晶（Ta 2 O 5）1-x-（TiO 2）x薄膜; 并在（Ta 2 O 5）1-x-（TiO 2）x薄膜上形成上电极。

公开(公告)号：US06777740B2

公开(公告)日：2004-08-17

申请号：US10147468

申请日：2002-05-17

申请人： Kee Jeung Lee ,  Dong Jun Kim

发明人： Kee Jeung Lee ,  Dong Jun Kim

IPC分类号： H01L8242

CPC分类号： H01L28/40 ,  H01L21/3145 ,  H01L27/10852 ,  H01L28/84 ,  H01L28/91

摘要： Disclosed are a capacitor for semiconductor capable of increasing storage capacitance as well as preventing leakage current and a method of manufacturing the same. According to the present invention. A lower electrode is formed on a semiconductor substrate. The surface of the lower electrode is surface-treated so as to prevent a natural oxide layer from generating on the surface thereof. A (TaO)1−x(TiO)N layer as a dielectric is deposited on the upper part of the lower electrode. Afterwards, to crystallize the (TaO)1−x(TiO)N layer, a thermal-treatment is performed. Next, an upper electrode is formed on the upper part of the (TaO)1−x(TiO)N layer.

摘要翻译： 公开了一种能够增加存储电容以及防止漏电流的半导体电容器及其制造方法。 根据本发明。 在半导体衬底上形成下电极。 对下电极的表面进行表面处理，以防止在其表面上产生自然氧化物层。 作为电介质的（TaO）1-x（TiO）N层沉积在下电极的上部。 然后，为了使（TaO）1-x（TiO）N层结晶，进行热处理。 接下来，在（TaO）1-x（TiO）N层的上部形成上电极。

公开(公告)号：US06893922B2

公开(公告)日：2005-05-17

申请号：US10121509

申请日：2002-04-15

申请人： Kwang Chul Joo ,  Kee Jeung Lee

发明人： Kwang Chul Joo ,  Kee Jeung Lee

IPC分类号： H01L21/8247 ,  H01L21/28 ,  H01L21/318 ,  H01L27/115 ,  H01L29/423 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  H01L21/336

CPC分类号： H01L21/28273 ,  H01L21/28194 ,  H01L29/42324 ,  H01L29/511

摘要： A non-volatile memory device and a manufacturing method thereof are disclosed. The non-volatile memory device includes a gate insulating film formed on a semiconductor substrate, a floating gate formed on the gate insulating film, a dielectric film comprising a (TaO)1−x(TiO)xN film on the floating gate, and a control gate formed on the dielectric film. Thus, large charge capacitance values can be obtained compared to a similarly sized device using an ONO or Ta2O5 thin film dielectric while simultaneously simplifying the manufacturing process.

摘要翻译： 公开了一种非易失性存储器件及其制造方法。 非易失性存储器件包括形成在半导体衬底上的栅极绝缘膜，形成在栅极绝缘膜上的浮动栅极，包含（TaO）1-x（TiO）

公开(公告)号：US06784068B2

公开(公告)日：2004-08-31

申请号：US10634550

申请日：2003-08-05

申请人： Kee Jeung Lee ,  Hai Won Kim

发明人： Kee Jeung Lee ,  Hai Won Kim

IPC分类号： H01L2120

CPC分类号： H01L27/10852 ,  H01L21/31116 ,  H01L27/10817 ,  H01L28/84 ,  H01L28/90

摘要： A capacitor is fabricated over a first layer having a first conductive plug formed on a substrate in a semiconductor memory. On the first layer, a silicon nitride film, a first capacitor oxide film, and a second oxide film are sequentially formed. The first and the second oxide films have different wet etch rates. Dry and wet etchings are sequentially performed to the first and second oxide films to form a second contact hole. The second contact hole is then etched. Thereafter, a silicon film and a filler film are sequentially formed on the resultant surface of the structure. A cylindrical storage node electrode is then formed by etching a predetermined portion of the filler film and the silicon film. After removing the remaining filler film and the oxide films, a Ta2O5 dielectric film covering the storage node electrode and a TiN film for an upper electrode are then sequentially formed.

摘要翻译： 在半导体存储器中的在衬底上形成的第一导电插塞的第一层上制造电容器。 在第一层上，依次形成氮化硅膜，第一电容器氧化膜和第二氧化物膜。 第一和第二氧化膜具有不同的湿蚀刻速率。 依次对第一和第二氧化物膜进行干蚀刻和湿蚀刻以形成第二接触孔。 然后蚀刻第二接触孔。 此后，在结构的所得表面上依次形成硅膜和填充膜。 然后通过蚀刻填充膜和硅膜的预定部分来形成圆柱形存储节点电极。 在除去剩余的填充膜和氧化物膜之后，依次形成覆盖存储节点电极的Ta 2 O 5电介质膜和用于上部电极的TiN膜。

公开(公告)号：US06525364B1

公开(公告)日：2003-02-25

申请号：US09603440

申请日：2000-06-23

申请人： Kee Jeung Lee

发明人： Kee Jeung Lee

IPC分类号： H01L27108

CPC分类号： H01L27/10852 ,  H01L21/3143 ,  H01L27/10817 ,  H01L28/40 ,  H01L28/82 ,  H01L28/90

摘要： Disclosed is a capacitor for semiconductor device with a dielectric layer having low leakage current and high dielectric constant. The capacitor includes: a lower electrode; a dielectric layer formed on the lower electrode; and an upper electrode formed on the dielectric layer, wherein the dielectric layer is a TiON layer.