摘要:
The present invention is to provide a novel polymerizable chiral compound (chiral agent) having high left-handed helical twisting power, a polymerizable liquid crystal composition comprising the polymerizable chiral compound and a polymerizable liquid crystal compound, a liquid crystal polymer, and an optically anisotropic body.The object was achieved by a left-handed-helix-inducing polymerizable chiral compound represented by the following formula (I), a polymerizable liquid crystal composition comprising the polymerizable chiral compound and a polymerizable liquid crystal compound, a liquid crystal polymer and an optically anisotropic body: wherein X represents the following formula (X-i) or (X-ii) wherein * represents a bond: wherein Y1 to Y6 are each one selected from the group consisting of —O—, —S—, —O—C(═O)—, —C(═O)—O— and so on; Yx is one selected from the group consisting of —C(═O)—, —O—C(═O)—, —CH═CH—C(═O)—, —CH2— and so on; Yz is one selected from the group consisting of —C(═O)—, —C(═O)—O—, —C(═O)—CH═CH— and so on; G1 and G2 are each a divalent aliphatic group which has 1 to 20 carbon atoms and which may have a substituent; Z1 and Z2 are each an alkenyl group which has 2 to 10 carbon atoms and which may be substituted by a halogen atom; Q1 to Q4 are each a hydrogen atom or an alkyl group which has 1 to 6 carbon atoms and which may have a substituent; A1 to A6 are each a divalent organic group having 1 to 30 carbon atoms; and a and b are each 0 or 1.
摘要:
The present invention is to provide a novel polymerizable chiral compound (chiral agent) having high left-handed helical twisting power, a polymerizable liquid crystal composition comprising the polymerizable chiral compound and a polymerizable liquid crystal compound, a liquid crystal polymer, and an optically anisotropic body.The object was achieved by a left-handed-helix-inducing polymerizable chiral compound represented by the following formula (I), a polymerizable liquid crystal composition comprising the polymerizable chiral compound and a polymerizable liquid crystal compound, a liquid crystal polymer and an optically anisotropic body: wherein X represents the following formula (X-i) or (X-ii) wherein * represents a bond: wherein Y1 to Y6 are each one selected from the group consisting of —O—, —S—, —O—C(═O)—, —C(═O)—O— and so on; Yx is one selected from the group consisting of —C(═O)—, —O—C(═O)—, —CH═CH—C(═O)—, —CH2— and so on; Yz is one selected from the group consisting of —C(═O)—, —C(═O)—O—, —C(═O)—CH═CH— and so on; G1 and G2 are each a divalent aliphatic group which has 1 to 20 carbon atoms and which may have a substituent; Z1 and Z2 are each an alkenyl group which has 2 to 10 carbon atoms and which may be substituted by a halogen atom; Q1 to Q4 are each a hydrogen atom or an alkyl group which has 1 to 6 carbon atoms and which may have a substituent; A1 to A6 are each a divalent organic group having 1 to 30 carbon atoms; and a and b are each 0 or 1.
摘要:
The present inventions to provide a novel polymerizable chiral compound (chiral agent) having high helical twisting power, a polymerizable liquid crystal composition comprising the polymerizable chiral compound and a polymerizable liquid crystal compound, a liquid crystal polymer, and an optically anisotropic body. The object was achieved by a polymerizable chiral compound represented by the following formula (I), a polymerizable liquid crystal composition comprising the polymerizable chiral compound and a polymerizable liquid crystal compound, a liquid crystal polymer, and an optically anisotropic body: wherein Y1 to Y8 are each —O—, —O—C(═O)—, —C(═O)—O— or the like; G1 and G2 are each a divalent aliphatic group having 1 to 20 carbon atoms or the like; Z1 and Z2 are each an alkenyl group having 2 to 10 carbon atoms or the like; Q1 to Q4 are each a hydrogen atom or the like; A1 to A6 are each a divalent aromatic group A having 6 to 30 carbon atoms; and X is any of groups represented by the following (X-i) to (X-vi): wherein * represents a bond and L1 to L4 are each an alkyl group having 1 to 4 carbon atoms or the like; and wherein, in the formula (I), a and b are each 0 or 1.
摘要:
The present inventions to provide a novel polymerizable chiral compound (chiral agent) having high helical twisting power, a polymerizable liquid crystal composition comprising the polymerizable chiral compound and a polymerizable liquid crystal compound, a liquid crystal polymer, and an optically anisotropic body. The object was achieved by a polymerizable chiral compound represented by the following formula (I), a polymerizable liquid crystal composition comprising the polymerizable chiral compound and a polymerizable liquid crystal compound, a liquid crystal polymer, and an optically anisotropic body: wherein Y1 to Y8 are each —O—, —O—C(═O)—, —C(═O)—O— or the like; G1 and G2 are each a divalent aliphatic group having 1 to 20 carbon atoms or the like; Z1 and Z2 are each an alkenyl group having 2 to 10 carbon atoms or the like; Q1 to Q4 are each a hydrogen atom or the like; A1 to A6 are each a divalent aromatic group A having 6 to 30 carbon atoms; and X is any of groups represented by the following (X-i) to (X-vi): wherein * represents a bond and L1 to L4 are each an alkyl group having 1 to 4 carbon atoms or the like; and wherein, in the formula (I), a and b are each 0 or 1.
摘要:
A heat insulating member including at least one cholesteric resin layer having cholesteric regularity controlled such that, in a wavelength range of 800 nm to 2,500 nm, the cholesteric resin layer has a band of reflecting 40% or more of incident light with a wavelength width equal to or wider than 300 nm; and a binder layer containing a pigment, the heat insulating member having a yellow index of 2.0 or lower.
摘要:
Provided are: a p-type MgZnO-based thin film that functions as a p-type; and a semiconductor light emitting device that includes the p-type MgZnO-based thin film.A p-type MgxZn1-xO-based thin film (1) is formed on a substrate (2) made of a ZnO-based semiconductor. The p-type MgxZn1-xO-based thin film (1) is composed so that X as a ratio of Mg with respect to Zn therein can be 0≦X
摘要翻译:提供:用作p型的p型MgZnO基薄膜; 以及包括p型MgZnO基薄膜的半导体发光器件。 在由ZnO类半导体制成的基板(2)上形成p型Mg x Zn 1-x O系薄膜(1)。 p型Mg x Zn 1-x O系薄膜(1)的构成为,使Mg相对于Zn的比例的X为0以上,X <1,优选为0&lt; NlE; X&lt; lE; 0.5。 在p型MgZnO薄膜(1)中,作为受体的p型杂质的氮含量约为5.0×1018 cm -3以上。 p型MgZnO薄膜(1)构成为使得成为供体的诸如硅的IV族元素制成的n型杂质的浓度可以为约1.0×10 17 cm -3以下。 p型MgZnO薄膜(1)构成为使得成为供体的诸如硼和铝的III族元素制成的n型杂质的浓度可以为约1.0×1016 cm -3以下。
摘要:
Provided are an oxide thin film doped with an n-type impurity, and an oxide thin film device. In an oxide thin film (2), as shown in FIG. 1(b), doped oxide layers (2a) doped with an n-type (electron-conductivity type) impurity and undoped oxide layers (2b) not doped with an n-type impurity are laminated in an alternating and repeated manner. When an oxide layer is doped with the n-type impurity at a high concentration, roughness of a surface of the oxide layer becomes large. For this reason, the doped oxide layers (2a) are covered with the undoped oxide layers (2b) capable of ensuring surface flatness, before surface roughness attributable to the doped oxide layers (2a) becomes very large. Thus, a flat oxide thin film can be formed.
摘要:
Provided are: a radical generating apparatus that increases a purity of emitted plasma atoms, prevents contamination with impurities, and is improved in controllability over ion concentration; and a ZnO-based thin film prevented from being contaminated with impurities. A high-frequency coil (4) is wound around an outer side of a discharging tube (10), and a terminal of the high-frequency coil (4) is connected to a high-frequency power source (9). The discharging tube (10) is constituted by a discharging cylinder (1), a lid (2) and a gas introducing bottom plate (3). Additionally, a support base (8) is provided, a support post (6) is arranged on the support base (8), and a shutter (5) is connected to the support post (6). With respect to shaded components, that is, the shutter (5), the lid (2), the discharging cylinder (1) and the gas introducing bottom plate (3), an entirety or a part thereof is formed of a silicon-based compound such as quartz.
摘要:
A semiconductor light emitting device is provided, in which the light emitting efficiency of a LED is improved. A semiconductor light emitting device (11) includes a light emitting layer (16) made of a GaN-based semiconductor sandwiched with an n-type GaN-based semiconductor layer (17) and a p-type GaN-based semiconductor layer (15), and a ZnO-based or an ITO transparent electrode layer (14). Further, a value of an equation represented by 3t/(A/π)1/2−3(t/(A/π)1/2)2+(t/(A/π)1/2)3 is 0.1 or more, where a thickness of the transparent electrode layer is represented by t and an area of the light emitting layer (light emitting area) of the light emitting device (11) is represented by A. The light emitting efficiency is improved using the transparent electrode layer (14) having an optimum thickness to the light emitting area.
摘要:
Provided is an infrared reflector having the configuration in which a dielectric film, an Au (gold) film, and an oxide film are sequentially formed on a substrate. The infrared reflector with this configuration is used so that the oxide film would face a body to be heated. In addition, infrared light emitted from a heat source can be reflected and collected by a reflection metal of the Au film to the body to be heated. Moreover, since the dielectric film is formed on the substrate, it is possible to prevent Au from dispersing under high temperature and thus to prevent deterioration of the infrared reflector.