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    Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber
    2.
    发明授权
    Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber 失效
    用于控制等离子体增强半导体晶片处理室中的磁场强度的方法和装置

    公开(公告)号：US07316199B2

    公开(公告)日：2008-01-08

    申请号：US10146443

    申请日：2002-05-14

    申请人： Keiji Horioka ,  Chun Yan ,  Taeho Shin ,  Roger Alan Lindley ,  Qi Li ,  Panyin Hughes ,  Douglas H. Burns ,  Evans Y. Lee ,  Bryan Y. Pu

    发明人： Keiji Horioka ,  Chun Yan ,  Taeho Shin ,  Roger Alan Lindley ,  Qi Li ,  Panyin Hughes ,  Douglas H. Burns ,  Evans Y. Lee ,  Bryan Y. Pu

    IPC分类号： C23C16/00 ,  H01L21/306

    CPC分类号： H01J37/32623 ,  H01J37/3266

    摘要： A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magnetic field nearly parallel to the top surface of a support pedestal in the reaction chamber and four sub-magnetic coil sections placed generally coaxially with the main magnetic coil sections to produce a magnetic field of the direction opposite of that of the magnetic field produced with the main magnetic coil sections. In the magnetic field generator, magnetic fields of opposite polarities are superimposed on each other when electric currents of opposite directions are applied to the main and sub-magnetic coil sections.

    摘要翻译： 用于产生加速等离子体形成的磁场的磁场发生器放置在半导体衬底处理系统的反应室附近。 磁场发生器具有四个主要的磁线圈部分，用于产生几乎平行于反应室中的支撑基座的顶表面的磁场和与主电磁线圈部分大致同轴放置的四个子磁线圈部分，以产生磁场 的方向与由主电磁线圈段产生的磁场的方向相反。 在磁场发生器中，相反极性的磁场在施加到主磁亚极部分和次磁线圈部分的相反方向的电流时彼此叠加。

    Plasma control using dual cathode frequency mixing and controlling the level of polymer formation
    7.
    发明授权
    Plasma control using dual cathode frequency mixing and controlling the level of polymer formation 失效
    等离子体控制采用双阴极混合和控制聚合物形成的水平

    公开(公告)号：US07736914B2

    公开(公告)日：2010-06-15

    申请号：US11947663

    申请日：2007-11-29

    申请人： Jingbao Liu ,  Taeho Shin ,  Bryan Y. Pu

    发明人： Jingbao Liu ,  Taeho Shin ,  Bryan Y. Pu

    IPC分类号： H01L21/00 ,  H01L21/66 ,  H01L21/20

    CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67069 ,  H01L22/20

    摘要： Methods for processing a substrate in a processing chamber using dual RF frequencies are provided herein. In some embodiments, a method of processing a substrate includes forming a plasma of a polymer forming chemistry to etch a feature into a substrate disposed on a substrate support in a process chamber while depositing a polymer on at least portions of the feature being etched. A low frequency and a high frequency RF signal are applied to an electrode disposed in the substrate support. The method further includes controlling the level of polymer formation on the substrate, wherein controlling the level of polymer formation comprises adjusting a power ratio of the high frequency to the low frequency RF signal.

    摘要翻译： 本文提供了使用双RF频率处理处理室中的衬底的方法。 在一些实施例中，处理衬底的方法包括形成形成化学的聚合物的等离子体，以将特征蚀刻到设置在处理室中的衬底支撑件上的衬底中，同时在被蚀刻的特征的至少部分上沉积聚合物。 将低频和高频RF信号施加到设置在基板支架中的电极。 该方法还包括控制在基底上聚合物形成的水平，其中控制聚合物形成的水平包括调整高频与低频RF信号的功率比。

    PLASMA CONTROL USING DUAL CATHODE FREQUENCY MIXING
    8.
    发明申请
    PLASMA CONTROL USING DUAL CATHODE FREQUENCY MIXING 失效
    使用双阴极频率混合的等离子体控制

    公开(公告)号：US20090142859A1

    公开(公告)日：2009-06-04

    申请号：US11947663

    申请日：2007-11-29

    申请人： JINGBAO LIU ,  Taeho Shin ,  Bryan Y. Pu

    发明人： JINGBAO LIU ,  Taeho Shin ,  Bryan Y. Pu

    IPC分类号： H01L21/66 ,  H01L21/3065 ,  H01L21/00

    CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67069 ,  H01L22/20

    摘要： Methods for processing a substrate in a processing chamber using dual RF frequencies are provided herein. In some embodiments, a method of processing a substrate includes forming a plasma of a polymer forming chemistry to etch a feature into a substrate disposed on a substrate support in a process chamber while depositing a polymer on at least portions of the feature being etched. A low frequency and a high frequency RF signal are applied to an electrode disposed in the substrate support. The method further includes controlling the level of polymer formation on the substrate, wherein controlling the level of polymer formation comprises adjusting a power ratio of the high frequency to the low frequency RF signal.

    摘要翻译： 本文提供了使用双RF频率处理处理室中的衬底的方法。 在一些实施例中，处理衬底的方法包括形成形成化学物质的聚合物的等离子体，以将特征蚀刻到设置在处理室中的衬底支撑体上的衬底中，同时在被蚀刻的特征的至少部分上沉积聚合物。 将低频和高频RF信号施加到设置在基板支架中的电极。 该方法还包括控制在基底上聚合物形成的水平，其中控制聚合物形成的水平包括调整高频与低频RF信号的功率比。

    Adjusting DC bias voltage in plasma chamber
    9.
    发明授权
    Adjusting DC bias voltage in plasma chamber 失效
    调整等离子体室内的直流偏置电压

    公开(公告)号：US06513452B2

    公开(公告)日：2003-02-04

    申请号：US09841804

    申请日：2001-04-24

    申请人： Hongching Shan ,  Evans Y. Lee ,  Michael D. Welch ,  Robert W. Wu ,  Bryan Y. Pu ,  Paul E. Luscher ,  James D. Carducci ,  Richard Blume

    发明人： Hongching Shan ,  Evans Y. Lee ,  Michael D. Welch ,  Robert W. Wu ,  Bryan Y. Pu ,  Paul E. Luscher ,  James D. Carducci ,  Richard Blume

    IPC分类号： C23C1600

    CPC分类号： H01J37/32834 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32706

    摘要： A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.

    摘要翻译： 一种调整用于制造半导体器件的等离子体室中的阴极直流偏压的方法。 电介质屏蔽件位于等离子体和室的电接地部件的选定部分之间，例如电接地室壁。 通过控制一个或多个以下参数来调节阴极直流偏压：（1）腔室壁的表面积或由介电屏蔽件阻挡的其它接地部件; （2）电介质的厚度; （3）屏蔽和室壁之间的间隙; 和（4）介电材料的介电常数。 在装置方面，本发明是用于制造半导体器件的等离子体室，其具有带有多个弯曲通道的排气挡板。 每个通道足够长和弯曲，使得室内的等离子体的任何部分不能延伸超过通道的出口。 通过阻止等离子体到达排气泵，排气挡板减少排气泵部件上不想要的颗粒的沉积。 排气挡板还通过减少将RF功率耦合到等离子体的电接地室壁的有效表面积来减小阴极DC偏压。