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    Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber
    6.
    发明授权
    Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber 失效
    用于控制等离子体增强半导体晶片处理室中的磁场强度的方法和装置

    公开(公告)号：US07316199B2

    公开(公告)日：2008-01-08

    申请号：US10146443

    申请日：2002-05-14

    申请人： Keiji Horioka ,  Chun Yan ,  Taeho Shin ,  Roger Alan Lindley ,  Qi Li ,  Panyin Hughes ,  Douglas H. Burns ,  Evans Y. Lee ,  Bryan Y. Pu

    发明人： Keiji Horioka ,  Chun Yan ,  Taeho Shin ,  Roger Alan Lindley ,  Qi Li ,  Panyin Hughes ,  Douglas H. Burns ,  Evans Y. Lee ,  Bryan Y. Pu

    IPC分类号： C23C16/00 ,  H01L21/306

    CPC分类号： H01J37/32623 ,  H01J37/3266

    摘要： A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magnetic field nearly parallel to the top surface of a support pedestal in the reaction chamber and four sub-magnetic coil sections placed generally coaxially with the main magnetic coil sections to produce a magnetic field of the direction opposite of that of the magnetic field produced with the main magnetic coil sections. In the magnetic field generator, magnetic fields of opposite polarities are superimposed on each other when electric currents of opposite directions are applied to the main and sub-magnetic coil sections.

    摘要翻译： 用于产生加速等离子体形成的磁场的磁场发生器放置在半导体衬底处理系统的反应室附近。 磁场发生器具有四个主要的磁线圈部分，用于产生几乎平行于反应室中的支撑基座的顶表面的磁场和与主电磁线圈部分大致同轴放置的四个子磁线圈部分，以产生磁场 的方向与由主电磁线圈段产生的磁场的方向相反。 在磁场发生器中，相反极性的磁场在施加到主磁亚极部分和次磁线圈部分的相反方向的电流时彼此叠加。

    Plasma control using dual cathode frequency mixing and controlling the level of polymer formation
    7.
    发明授权
    Plasma control using dual cathode frequency mixing and controlling the level of polymer formation 失效
    等离子体控制采用双阴极混合和控制聚合物形成的水平

    公开(公告)号：US07736914B2

    公开(公告)日：2010-06-15

    申请号：US11947663

    申请日：2007-11-29

    申请人： Jingbao Liu ,  Taeho Shin ,  Bryan Y. Pu

    发明人： Jingbao Liu ,  Taeho Shin ,  Bryan Y. Pu

    IPC分类号： H01L21/00 ,  H01L21/66 ,  H01L21/20

    CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67069 ,  H01L22/20

    摘要： Methods for processing a substrate in a processing chamber using dual RF frequencies are provided herein. In some embodiments, a method of processing a substrate includes forming a plasma of a polymer forming chemistry to etch a feature into a substrate disposed on a substrate support in a process chamber while depositing a polymer on at least portions of the feature being etched. A low frequency and a high frequency RF signal are applied to an electrode disposed in the substrate support. The method further includes controlling the level of polymer formation on the substrate, wherein controlling the level of polymer formation comprises adjusting a power ratio of the high frequency to the low frequency RF signal.

    摘要翻译： 本文提供了使用双RF频率处理处理室中的衬底的方法。 在一些实施例中，处理衬底的方法包括形成形成化学的聚合物的等离子体，以将特征蚀刻到设置在处理室中的衬底支撑件上的衬底中，同时在被蚀刻的特征的至少部分上沉积聚合物。 将低频和高频RF信号施加到设置在基板支架中的电极。 该方法还包括控制在基底上聚合物形成的水平，其中控制聚合物形成的水平包括调整高频与低频RF信号的功率比。

    PLASMA CONTROL USING DUAL CATHODE FREQUENCY MIXING
    8.
    发明申请
    PLASMA CONTROL USING DUAL CATHODE FREQUENCY MIXING 失效
    使用双阴极频率混合的等离子体控制

    公开(公告)号：US20090142859A1

    公开(公告)日：2009-06-04

    申请号：US11947663

    申请日：2007-11-29

    申请人： JINGBAO LIU ,  Taeho Shin ,  Bryan Y. Pu

    发明人： JINGBAO LIU ,  Taeho Shin ,  Bryan Y. Pu

    IPC分类号： H01L21/66 ,  H01L21/3065 ,  H01L21/00

    CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67069 ,  H01L22/20

    摘要： Methods for processing a substrate in a processing chamber using dual RF frequencies are provided herein. In some embodiments, a method of processing a substrate includes forming a plasma of a polymer forming chemistry to etch a feature into a substrate disposed on a substrate support in a process chamber while depositing a polymer on at least portions of the feature being etched. A low frequency and a high frequency RF signal are applied to an electrode disposed in the substrate support. The method further includes controlling the level of polymer formation on the substrate, wherein controlling the level of polymer formation comprises adjusting a power ratio of the high frequency to the low frequency RF signal.

    摘要翻译： 本文提供了使用双RF频率处理处理室中的衬底的方法。 在一些实施例中，处理衬底的方法包括形成形成化学物质的聚合物的等离子体，以将特征蚀刻到设置在处理室中的衬底支撑体上的衬底中，同时在被蚀刻的特征的至少部分上沉积聚合物。 将低频和高频RF信号施加到设置在基板支架中的电极。 该方法还包括控制在基底上聚合物形成的水平，其中控制聚合物形成的水平包括调整高频与低频RF信号的功率比。

    Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone
    9.
    发明授权
    Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone 有权
    等离子体蚀刻反应器，其分布在晶片表面上的蚀刻气体和独立进料的中心气体区域中的聚合物氧化气体

    公开(公告)号：US08187415B2

    公开(公告)日：2012-05-29

    申请号：US11490936

    申请日：2006-07-21

    申请人： Jong Mun Kim ,  Jingbao Liu ,  Bryan Y. Pu

    发明人： Jong Mun Kim ,  Jingbao Liu ,  Bryan Y. Pu

    IPC分类号： H01L21/205 ,  H01L21/28

    CPC分类号： H01J37/321 ,  H01J37/3244

    摘要： A plasma etch reactor for plasma enhanced etching of a workpiece such as a semiconductor wafer includes a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes a first process gas inlet coupled to receive predominantly or pure oxygen gas and a second process gas inlet coupled to receive a polymerizing etch process gas. The reactor has a ceiling plasma source power electrode including a center circular gas disperser configured to receive a process gas from the first process gas inlet and to distribute the process gas into the chamber over the workpiece, and an inner annular gas disperser centered around the center gas disperser configured to receive the process gas from the second process gas inlet and to distribute the process gas into the chamber over the workpiece through an inner plurality of injection ports.

    摘要翻译： 用于等离子体等离子体蚀刻反应器对诸如半导体晶片的工件进行增强蚀刻，包括限定处理室的壳体，被配置为在处理期间支撑室内的工件并包括等离子体偏置功率电极的工件支撑件。 反应器还包括耦合以接收主要或纯氧气的第一工艺气体入口和耦合以接收聚合蚀刻工艺气体的第二工艺气体入口。 反应器具有天花板等离子体源功率电极，其包括中心圆形气体分散器，该中心圆形气体分散器构造成从第一工艺气体入口接收工艺气体并将工艺气体分配到工件上方的室中，并且以中心为中心的内部环形气体分散器 气体分散器被配置为从第二处理气体入口接收处理气体，并且通过内部多个注入口将工艺气体分配到工件上方的腔室中。

    Halogen-free amorphous carbon mask etch having high selectivity to photoresist
    10.
    发明授权
    Halogen-free amorphous carbon mask etch having high selectivity to photoresist 失效
    对光致抗蚀剂具有高选择性的无卤无定形碳掩模蚀刻

    公开(公告)号：US07807064B2

    公开(公告)日：2010-10-05

    申请号：US11689389

    申请日：2007-03-21

    申请人： Jong Mun Kim ,  Judy Wang ,  Ajey M. Joshi ,  Jingbao Liu ,  Bryan Y. Pu

    发明人： Jong Mun Kim ,  Judy Wang ,  Ajey M. Joshi ,  Jingbao Liu ,  Bryan Y. Pu

    IPC分类号： B44C1/22

    CPC分类号： H01L21/31122 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/31138 ,  H01L21/31144

    摘要： In one embodiment of the present invention, a halogen-free plasma etch processes is used to define a feature in a multi-layered masking stack including an amorphous carbon layer. In a particular embodiment, oxygen (O2), nitrogen (N2), and carbon monoxide (CO) are utilized to etch the amorphous carbon layer to form a mask capable of producing sub-100 nm features in a substrate film having a reduced line edge roughness value. In another embodiment, the present invention employs an O2 plasma pretreatment preceding the halogen-free amorphous carbon etch to first form an oxidized silicon region in a patterned photoresist layer to increase the selectivity of the amorphous carbon etch relative to a patterned photoresist layer containing unoxidized silicon.

    摘要翻译： 在本发明的一个实施例中，使用无卤等离子体蚀刻工艺来定义包括无定形碳层的多层掩模叠层中的特征。 在一个具体实施方案中，使用氧（O 2），氮（N 2）和一氧化碳（CO）来蚀刻无定形碳层以形成能够在具有减小的线边缘的基底膜中产生亚100nm特征的掩模 粗糙度值。 在另一个实施方案中，本发明采用在无卤无定形碳蚀刻之前的O 2等离子体预处理，首先在图案化光致抗蚀剂层中形成氧化硅区，以增加无定形碳蚀刻相对于含有未氧化硅的图案化光致抗蚀剂层的选择性 。