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    Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber
    2.
    发明授权
    Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber 失效
    用于控制等离子体增强半导体晶片处理室中的磁场强度的方法和装置

    公开(公告)号：US07316199B2

    公开(公告)日：2008-01-08

    申请号：US10146443

    申请日：2002-05-14

    申请人： Keiji Horioka ,  Chun Yan ,  Taeho Shin ,  Roger Alan Lindley ,  Qi Li ,  Panyin Hughes ,  Douglas H. Burns ,  Evans Y. Lee ,  Bryan Y. Pu

    发明人： Keiji Horioka ,  Chun Yan ,  Taeho Shin ,  Roger Alan Lindley ,  Qi Li ,  Panyin Hughes ,  Douglas H. Burns ,  Evans Y. Lee ,  Bryan Y. Pu

    IPC分类号： C23C16/00 ,  H01L21/306

    CPC分类号： H01J37/32623 ,  H01J37/3266

    摘要： A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magnetic field nearly parallel to the top surface of a support pedestal in the reaction chamber and four sub-magnetic coil sections placed generally coaxially with the main magnetic coil sections to produce a magnetic field of the direction opposite of that of the magnetic field produced with the main magnetic coil sections. In the magnetic field generator, magnetic fields of opposite polarities are superimposed on each other when electric currents of opposite directions are applied to the main and sub-magnetic coil sections.

    摘要翻译： 用于产生加速等离子体形成的磁场的磁场发生器放置在半导体衬底处理系统的反应室附近。 磁场发生器具有四个主要的磁线圈部分，用于产生几乎平行于反应室中的支撑基座的顶表面的磁场和与主电磁线圈部分大致同轴放置的四个子磁线圈部分，以产生磁场 的方向与由主电磁线圈段产生的磁场的方向相反。 在磁场发生器中，相反极性的磁场在施加到主磁亚极部分和次磁线圈部分的相反方向的电流时彼此叠加。

    PLASMA PROCESSING METHOD
    7.
    发明申请
    PLASMA PROCESSING METHOD 审中-公开
    等离子体处理方法

    公开(公告)号：US20080260966A1

    公开(公告)日：2008-10-23

    申请号：US11738507

    申请日：2007-04-22

    申请人： Hiroji Hanawa ,  Andrew Nguyen ,  Keiji Horioka ,  Kallol Bera ,  Kenneth S. Collins ,  Lawrence Wong ,  Martin Jeff Salinas ,  Roger Alan Lindley ,  Hong S. Yang

    发明人： Hiroji Hanawa ,  Andrew Nguyen ,  Keiji Horioka ,  Kallol Bera ,  Kenneth S. Collins ,  Lawrence Wong ,  Martin Jeff Salinas ,  Roger Alan Lindley ,  Hong S. Yang

    IPC分类号： H05H1/24

    CPC分类号： H01J37/3266 ,  H01J37/32623

    摘要： Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a method of controlling a plasma in a process chamber includes providing a chamber for processing a substrate and having a processing volume defined therein wherein a plasma is to be formed during operation, the chamber further having a plasma control magnet assembly comprising a plurality of magnets that provide a magnetic field having a magnitude is greater than about 10 Gauss in an upper region of the processing volume and less than about 10 Gauss in a lower region of the processing volume proximate a substrate to be processed; supplying a process gas to the chamber; and forming a plasma in the processing volume from the process gas.

    摘要翻译： 本发明的实施例涉及等离子体处理装置及其使用方法。 在一些实施例中，控制处理室中的等离子体的方法包括提供用于处理衬底并具有其中限定的处理体积的室，其中在操作期间将形成等离子体，所述室还具有等离子体控制磁体组件，其包括 提供具有幅度的磁场的多个磁体在处理体积的上部区域中大于约10个高斯，并且在处理体积的接近待处理衬底的较低区域中小于约10个高斯; 向所述室供应处理气体; 以及从所述处理气体在所述处理容积中形成等离子体。

    Plasma processing chamber with enhanced gas delivery
    9.
    发明授权
    Plasma processing chamber with enhanced gas delivery 有权
    等离子处理室具有增强的气体输送

    公开(公告)号：US08382939B2

    公开(公告)日：2013-02-26

    申请号：US12501885

    申请日：2009-07-13

    申请人： Michael Charles Kutney ,  Roger Alan Lindley

    发明人： Michael Charles Kutney ,  Roger Alan Lindley

    IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509

    CPC分类号： H01J37/32834 ,  H01J37/3244 ,  H01J37/32449

    摘要： A method and apparatus for providing flow into a processing chamber are provided. In one embodiment, a vacuum processing chamber is provided that includes a substrate support pedestal disposed in an interior volume of a chamber body, a lid enclosing the interior volume, a gas distribution plate positioned below the lid and above the substrate support pedestal, and a vortex inducing gas inlet oriented to induce a vortex of gas circulating in a plenum around a center line of the chamber body prior to the gas passing through the gas distribution plate.

    摘要翻译： 提供了一种用于提供流入处理室的方法和装置。 在一个实施例中，提供真空处理室，其包括设置在室主体的内部容积中的基板支撑台座，封闭内部容积的盖子，位于盖子下方和基板支撑台架上方的气体分配板，以及 在气体通过气体分布板之前，引导气体入口被引导以引起在室主体的中心线周围的增压室中循环的气体涡流。

    Method and apparatus for automated validation of semiconductor process recipes
    10.
    发明授权
    Method and apparatus for automated validation of semiconductor process recipes 有权
    用于半导体工艺配方自动验证的方法和装置

    公开(公告)号：US08527081B2

    公开(公告)日：2013-09-03

    申请号：US13044747

    申请日：2011-03-10

    申请人： Charles Hardy ,  Roger Alan Lindley

    发明人： Charles Hardy ,  Roger Alan Lindley

    IPC分类号： G06F19/00

    CPC分类号： G06N5/025

    摘要： Methods and apparatus for automated validation of semiconductor process steps are provided herein. In some examples, a method for validating a semiconductor process recipe includes: selecting a rule set describing an operating window for a semiconductor process tool; checking parameter values defined by steps in the semiconductor process recipe against limit-checking rules of the rule set to produce first results; determining step types from the steps in the semiconductor process recipe using step definition rules of the rule set to produce second results; checking transitions between the step types against step transition rules of the rule set to produce third results; and generating, using the computer, validation data for use of the semiconductor process recipe with the semiconductor process tool based on the first, the second, and the third results.

    摘要翻译： 本文提供了半导体工艺步骤的自动验证的方法和装置。 在一些示例中，用于验证半导体处理配方的方法包括：选择描述半导体处理工具的操作窗口的规则集; 检查由半导体工艺配方中的步骤定义的参数值，以反映规则集的限制检查规则以产生第一个结果; 使用规则集的步骤定义规则从半导体工艺配方中的步骤确定步骤类型以产生第二结果; 检查步骤类型与规则集的步骤转换规则之间的转换，以产生第三个结果; 以及基于第一，第二和第三结果，使用计算机产生使用半导体处理工具的半导体工艺配方的验证数据。