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1.发明授权Analog to digital converter using sawtooth voltage signals with differential comparator 失效模数转换器采用锯齿波电压信号与差分比较器公开(公告)号：US07158067B2
公开(公告)日：2007-01-02
申请号：US11053756
申请日：2005-01-31
CPC分类号： H03M1/368
摘要： An analog to digital converter includes a resistor-divider network including a plurality of resistors, an arbel channel circuit configured to generate a voltage sawtooth signal as an output, a dc-offset disposed to couple a node of the resistor-divider network and the arbel-channel circuit. The converter further includes a voltage reference circuit configured to generate a reference voltage, and a differential comparator configured to compare the voltage sawtooth signal with the reference voltage to produce a digital output signal corresponding to the voltage sawtooth signal. Method of converting an analog signal to a digital signal is also described.
摘要翻译： 模数转换器包括包括多个电阻器的电阻分压网络，配置成产生电压锯齿波信号作为输出的阿贝尔通道电路，用于耦合电阻分压器网络的节点和阿贝 通道电路。 转换器还包括被配置为产生参考电压的电压参考电路，以及差分比较器，被配置为将电压锯齿波信号与参考电压进行比较，以产生对应于电压锯齿波信号的数字输出信号。 还描述了将模拟信号转换为数字信号的方法。
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公开(公告)号：US07142145B1
公开(公告)日：2006-11-28
申请号：US10997092
申请日：2004-11-23
IPC分类号： H03M1/12
CPC分类号： H03M1/367
摘要： An analog to digital converter circuit includes an isolation circuit, an input circuit including a resistor chain, a plurality of fixed threshold comparators, and an encoder. The resistor chain includes a plurality of resistors connected in series, the isolation circuit being configured to isolate a device supplying the analog input signal from the input circuit. The isolation circuit is connected to the input circuit at a top node of the resistor chain, and wherein 2N values of the analog input voltage are connected to inputs of the fixed threshold comparators to produce corresponding output signals. Methods of converting an analog signal to a digital signal are also described.
摘要翻译： 模数转换器电路包括隔离电路，包括电阻链的输入电路，多个固定阈值比较器和编码器。 电阻器链包括串联连接的多个电阻器，隔离电路被配置为隔离从输入电路提供模拟输入信号的装置。 隔离电路在电阻链的顶部节点处连接到输入电路，并且其中模拟输入电压的2 N值连接到固定阈值比较器的输入端以产生相应的输出信号。 还描述了将模拟信号转换为数字信号的方法。
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3.发明申请Technique for perfecting the active regions of wide bandgap semiconductor nitride devices 有权完善宽带隙半导体氮化物器件的有源区的技术公开(公告)号：US20070004106A1
公开(公告)日：2007-01-04
申请号：US11461904
申请日：2006-08-02
申请人： Martin Peckerar , Richard Henry , Daniel Koleske , Alma Wickenden , Charles Eddy , Ronald Holm , Mark Twigg
发明人： Martin Peckerar , Richard Henry , Daniel Koleske , Alma Wickenden , Charles Eddy , Ronald Holm , Mark Twigg
CPC分类号： H01L21/02378 , C30B25/04 , C30B29/40 , H01L21/0237 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L29/2003
摘要： This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The device includes a substrate, a semiconductor active material deposited on said substrate, and electrical contacts. The semiconductor active material defines raised structures having atomically smooth surfaces. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.
摘要翻译： 本发明涉及具有减小的扩展缺陷的电子/光电子器件及其制造方法。 该器件包括衬底，沉积在所述衬底上的半导体活性材料和电触点。 半导体活性材料限定具有原子光滑表面的凸起结构。 该方法包括以下步骤：在半导体衬底表面上沉积电介质薄膜掩模材料; 图案化掩模材料以在其中形成延伸到基板表面的开口; 在开口处生长活性物质; 去除掩模材料以形成具有减小的延伸缺陷密度的装置; 以及将电触头放置在所述装置上。
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公开(公告)号：US5567551A
公开(公告)日：1996-10-22
申请号：US222791
申请日：1994-04-04
申请人： Joseph Yahalom , Martin Peckerar
发明人： Joseph Yahalom , Martin Peckerar
摘要： A mask for ion beam lithography is made by coating a front side, sidewalls,nd a backside of a substrate with an insulating layer; opening, on the front side of the substrate, a window in the insulating layer to expose a front substrate surface; depositing an oxide membrane on the front substrate surface; opening a portion of the insulating material on the backside of the substrate to form an exposed backside of the substrate; forming a photoresist layer on the oxide membrane; patterning the photoresist layer; ion beam etching the oxide membrane through the patterned photoresist layer to completely remove selected portions of the oxide membrane and form a stenciled pattern in the oxide membrane; removing the patterned photoresist layer from the stenciled oxide membrane; removing, from the backside of the substrate, the exposed backside of the substrate to expose a backside of the stenciled pattern in the oxide membrane, thus leaving a stenciled oxide membrane, corresponding to the stenciled oxide pattern, held within a frame formed by remaining portions of the substrate. The stenciled oxide membrane is capable of being supported entirely by the frame.
摘要翻译： 通过用绝缘层涂覆基板的前侧，侧壁和背面来制造用于离子束光刻的掩模; 在所述基板的前侧开口，在所述绝缘层中形成露出前基板表面的窗口; 在前基板表面上沉积氧化膜; 在衬底的背面打开绝缘材料的一部分以形成衬底的暴露背面; 在氧化膜上形成光致抗蚀剂层; 图案化光致抗蚀剂层; 离子束通过图案化的光致抗蚀剂层蚀刻氧化物膜，以完全去除氧化膜的选定部分并在氧化物膜中形成模板图案; 从模板化氧化膜去除图案化的光致抗蚀剂层; 从衬底的背面去除衬底的暴露的背面以暴露氧化膜中的模版图案的背面，从而留下对应于模版氧化物图案的模版氧化膜，保持在由剩余部分形成的框架内 的基底。 模板氧化膜能够被框架完全支撑。
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公开(公告)号：US20110101789A1
公开(公告)日：2011-05-05
申请号：US12628585
申请日：2009-12-01
申请人： Thomas Steven Salter, JR. , George M. Metze , Neil Goldsman , Kwangsik Choi , Yves Ngu , Zeynep Dilli , Martin Peckerar , Li Bo
发明人： Thomas Steven Salter, JR. , George M. Metze , Neil Goldsman , Kwangsik Choi , Yves Ngu , Zeynep Dilli , Martin Peckerar , Li Bo
IPC分类号： H01F38/14
摘要： Provided is an RF power harvesting circuit with improved sensitivity to RF energy. The RF power harvesting device includes an inductor, a first capacitor connected to the inductor, a first MOSFET connected to a first node, and a second MOSFET connected to the first node. The inductor or the first capacitor are connected to the first node.
摘要翻译： 提供了对RF能量具有改进的灵敏度的RF功率采集电路。 RF功率收集装置包括电感器，连接到电感器的第一电容器，连接到第一节点的第一MOSFET和连接到第一节点的第二MOSFET。 电感器或第一电容器连接到第一节点。
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6.发明申请公开(公告)号：US20060170580A1
公开(公告)日：2006-08-03
申请号：US11053756
申请日：2005-01-31
IPC分类号： H03M1/12
CPC分类号： H03M1/368
摘要： An analog to digital converter includes a resistor-divider network including a plurality of resistors, an arbel channel circuit configured to generate a voltage sawtooth signal as an output, a dc-offset disposed to couple a node of the resistor-divider network and the arbel-channel circuit. The converter further includes a voltage reference circuit configured to generate a reference voltage, and a differential comparator configured to compare the voltage sawtooth signal with the reference voltage to produce a digital output signal corresponding to the voltage sawtooth signal. Method of converting an analog signal to a digital signal is also described.
摘要翻译： 模数转换器包括包括多个电阻器的电阻分压网络，配置成产生电压锯齿波信号作为输出的阿贝尔通道电路，用于耦合电阻分压器网络的节点和阿贝 通道电路。 转换器还包括被配置为产生参考电压的电压参考电路，以及差分比较器，被配置为将电压锯齿波信号与参考电压进行比较，以产生对应于电压锯齿波信号的数字输出信号。 还描述了将模拟信号转换为数字信号的方法。
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公开(公告)号：US06482639B2
公开(公告)日：2002-11-19
申请号：US09886051
申请日：2001-06-22
IPC分类号： C12M134
CPC分类号： G01N27/4145 , G01N33/54373 , H01L2924/0002 , H01L2924/00
摘要： Molecular recognition-based electronic sensor, which is gateless, depletion mode field effect transistor consisting of source and drain diffusions, a depletion-mode implant, and insulating layer chemically modified by immobilized molecular receptors that enables miniaturized label-free molecular detection amenable to high-density array formats. The conductivity of the active channel modulates current flow through the active channel when a voltage is applied between the source and drain diffusions. The conductivity of the active channel is determined by the potential of the sample solution in which the device is immersed and the device-solution interfacial capacitance. The conductivity of the active channel modulates current flow through the active channel when a voltage is applied between the source and drain diffusions. The interfacial capacitance is determined by the extent of occupancy of the immobilized receptor molecules by target molecules. Target molecules can be either charged or uncharged. Change in interfacial capacitance upon target molecule binding results in modulation of an externally supplied current through the channel.
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8.发明授权Technique for perfecting the active regions of wide bandgap semiconductor nitride devices 失效完善宽带隙半导体氮化物器件的有源区的技术公开(公告)号：US07198970B2
公开(公告)日：2007-04-03
申请号：US10768747
申请日：2004-01-23
申请人： Martin Peckerar , Richard Henry , Daniel Koleske , Alma Wickenden , Charles R. Eddy, Jr. , Ronald Holm , Mark E. Twigg
发明人： Martin Peckerar , Richard Henry , Daniel Koleske , Alma Wickenden , Charles R. Eddy, Jr. , Ronald Holm , Mark E. Twigg
IPC分类号： H01L21/20
CPC分类号： H01L21/02378 , C30B25/04 , C30B29/40 , H01L21/0237 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L29/2003
摘要： This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.
摘要翻译： 本发明涉及具有减小的扩展缺陷的电子/光电子器件及其制造方法。 该方法包括以下步骤：在半导体衬底表面上沉积电介质薄膜掩模材料; 图案化掩模材料以在其中形成延伸到基板表面的开口; 在开口处生长活性物质; 去除掩模材料以形成具有减小的延伸缺陷密度的装置; 以及将电触头放置在所述装置上。
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公开(公告)号：US20060250290A1
公开(公告)日：2006-11-09
申请号：US10997092
申请日：2004-11-23
申请人： Keir Lauritzen , Martin Peckerar , Frank Perkins
发明人： Keir Lauritzen , Martin Peckerar , Frank Perkins
IPC分类号： H03M1/12
CPC分类号： H03M1/367
摘要： An analog to digital converter circuit includes an isolation circuit, an input circuit including a resistor chain, a plurality of fixed threshold comparators, and an encoder. The resistor chain includes a plurality of resistors connected in series, the isolation circuit being configured to isolate a device supplying the analog input signal from the input circuit. The isolation circuit is connected to the input circuit at a top node of the resistor chain, and wherein 2N values of the analog input voltage are connected to inputs of the fixed threshold comparators to produce corresponding output signals. Methods of converting an analog signal to a digital signal are also described.
摘要翻译： 模数转换器电路包括隔离电路，包括电阻链的输入电路，多个固定阈值比较器和编码器。 电阻器链包括串联连接的多个电阻器，隔离电路被配置为隔离从输入电路提供模拟输入信号的装置。 隔离电路在电阻链的顶部节点处连接到输入电路，并且其中模拟输入电压的2 N值连接到固定阈值比较器的输入端以产生相应的输出信号。 还描述了将模拟信号转换为数字信号的方法。
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10.发明申请Technique for perfecting the active regions of wide bandgap semiconductor nitride devices 失效完善宽带隙半导体氮化物器件的有源区的技术公开(公告)号：US20050164475A1
公开(公告)日：2005-07-28
申请号：US10768747
申请日：2004-01-23
申请人： Martin Peckerar , Richard Henry , Daniel Koleske , Alma Wickenden , Charles Eddy , Ronald Holm , Mark Twigg
发明人： Martin Peckerar , Richard Henry , Daniel Koleske , Alma Wickenden , Charles Eddy , Ronald Holm , Mark Twigg
CPC分类号： H01L21/02378 , C30B25/04 , C30B29/40 , H01L21/0237 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L29/2003
摘要： This invention pertains to e lectronic/optoelectronic devices with reduced extended defects and to a method for making it. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.
摘要翻译： 本发明涉及具有减小的扩展缺陷的电子/光电子器件及其制造方法。 该方法包括以下步骤：在半导体衬底表面上沉积电介质薄膜掩模材料; 图案化掩模材料以在其中形成延伸到基板表面的开口; 在开口处生长活性物质; 去除掩模材料以形成具有减小的延伸缺陷密度的装置; 以及将电触头放置在所述装置上。
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