Field-emission electron source, method of manufacturing the same, and image display apparatus
    2.
    发明授权
    Field-emission electron source, method of manufacturing the same, and image display apparatus 失效
    场发射电子源及其制造方法以及图像显示装置

    公开(公告)号:US07588475B2

    公开(公告)日:2009-09-15

    申请号:US11729442

    申请日:2007-03-29

    IPC分类号: H01J9/00

    摘要: A stable field-emission electron source that does not suffer from a current drop even after a high-current density operation for a long time is provided. The field-emission electron source includes: a substrate; an insulating layer that is formed on the substrate and that has a plurality of openings; cathodes arranged at the respective openings in order to emit electron beams; a lead electrode formed on the insulating layer in order to control emission of electrons from the respective cathodes; and a surface-modifying layer formed on the surface of each of the cathodes emitting electrons, comprising a chemical bond between a cathode material composing the cathodes and a material different from the cathode material.

    摘要翻译: 提供即使在长时间的大电流密度操作之后也不会受到电流降低的稳定的场致发射电子源。 场发射电子源包括:衬底; 绝缘层,其形成在所述基板上并且具有多个开口; 阴极排列在相应的开口处以便发射电子束; 形成在所述绝缘层上的引线电极,以便控制来自各个阴极的电子的发射; 以及形成在发射电子的每个阴极的表面上的表面改性层,包括构成阴极的阴极材料与不同于阴极材料的材料之间的化学键。

    Electron source apparatus
    4.
    发明申请
    Electron source apparatus 审中-公开
    电子源装置

    公开(公告)号:US20060066198A1

    公开(公告)日:2006-03-30

    申请号:US11230156

    申请日:2005-09-19

    IPC分类号: H01J9/02

    摘要: An electron source apparatus includes a plurality of electron emission portions arranged in a matrix on a Si substrate, and a plurality of emitter lines and a plurality of gate lines that are orthogonal to each other, and each of the plurality of electron emission portions being controlled by signals from the plurality of emitter lines and the plurality of gate lines to perform an independent electron emission operation. Furthermore, device isolation regions are provided surrounding the respective plurality of emitter lines, contact holes are formed in the respective plurality of emitter lines, a plurality of emitter line mounting electrodes that correspond to the respective plurality of emitter lines are provided in a region outside regions that are surrounded by the device isolation regions, and conductors that are connected to the respective plurality of emitter line mounting electrodes are connected via the contact holes to the respective plurality of emitter lines corresponding to the respective plurality of emitter line mounting electrodes. Accordingly, the electron source apparatus can achieve high density and size reduction.

    摘要翻译: 电子源装置包括在Si衬底上以矩阵形式布置的多个电子发射部分,以及彼此正交的多条发射极线和多条栅极线,并且多个电子发射部分中的每一个被控制 通过来自多个发射极线和多个栅极线的信号进行独立的电子发射操作。 此外,设置在相应的多个发射极线周围的器件隔离区域,在相应的多个发射极线路中形成接触孔,在多个发射极线的外侧的区域中设置与多个发射极线对应的多个发射极线路安装电极 被连接到相应的多个发射极线路安装电极的导体经由接触孔连接到对应于多个发射极线路安装电极的各个发射极线。 因此,电子源装置可以实现高密度和尺寸减小。

    Field-emission electron source, method of manufacturing the same, and image display apparatus
    5.
    发明申请
    Field-emission electron source, method of manufacturing the same, and image display apparatus 失效
    场发射电子源及其制造方法以及图像显示装置

    公开(公告)号:US20070184747A1

    公开(公告)日:2007-08-09

    申请号:US11729442

    申请日:2007-03-29

    IPC分类号: H01J9/00

    摘要: A stable field-emission electron source that does not suffer from a current drop even after a high-current density operation for a long time is provided. The field-emission electron source includes: a substrate; an insulating layer that is formed on the substrate and that has a plurality of openings; cathodes arranged at the respective openings in order to emit electron beams; a lead electrode formed on the insulating layer in order to control emission of electrons from the respective cathodes; and a surface-modifying layer formed on the surface of each of the cathodes emitting electrons, comprising a chemical bond between a cathode material composing the cathodes and a material different from the cathode material.

    摘要翻译: 提供即使在长时间的高电流密度操作之后也不会受到电流降低的稳定的场致发射电子源。 场发射电子源包括:衬底; 绝缘层,其形成在所述基板上并且具有多个开口; 阴极排列在相应的开口处以便发射电子束; 形成在所述绝缘层上的引线电极,以便控制来自各个阴极的电子的发射; 以及形成在每个发射电子的阴极的表面上的表面改性层,包括构成阴极的阴极材料和不同于阴极材料的材料之间的化学键。

    Field emission display
    7.
    发明申请
    Field emission display 审中-公开
    场发射显示

    公开(公告)号:US20060066216A1

    公开(公告)日:2006-03-30

    申请号:US11233974

    申请日:2005-09-23

    IPC分类号: H01J63/04 H01J1/62

    CPC分类号: H01J29/864 H01J2329/00

    摘要: There is provided a field emission display that can achieve high brightness without increasing the anode voltage, and can realize high resolution by suppressing the occurrence of inter-pixel crosstalk resulting from light excited from the phosphor layers. A field emission display is constructed by a field emission electron source disposed in a vacuum container and a phosphor screen that is disposed in the vacuum container so as to be opposite to the field emission electron source and that has a plurality of recessed portions on its surface opposing to the field emission electron source, with phosphor layers being formed in the recessed portions An image is displayed by causing the phosphor layers to emit light by collision of electrons emitted from the field emission electron source. The inner wall surface of the recessed portions widens in a tapered shape from the bottom surface side toward the opening side, and adjacent recessed portions are divided by a rib structure made of a material having a light-absorbing effect (Black effect) with respect to light of the light-emitting wavelength. The phosphor layers are formed substantially all over the bottom surface and-the inner wall surface of the recessed portions.

    摘要翻译: 提供一种能够在不增加阳极电压的情况下实现高亮度的场致发射显示器,并且可以通过抑制由荧光体层激发的光引起的像素间串扰的发生而实现高分辨率。 场发射显示器由设置在真空容器中的场发射电子源和设置在真空容器中以与场致发射电子源相对的荧光屏构成,并且在其表面上具有多个凹部 与场发射电子源相反,荧光层形成在凹部中通过使荧光体层通过场发射电子源发射的电子的碰撞而发光,从而显示图像。 凹部的内壁面从底面侧朝向开口侧变宽为锥形,相邻的凹部由具有光吸收效果(黑色效果)的材料构成的肋结构相对于 发光波长的光。 荧光体层基本上形成在整个底表面和凹陷部分的内壁表面上。

    MATRIX-TYPE COLD-CATHODE ELECTRON SOURCE DEVICE
    8.
    发明申请
    MATRIX-TYPE COLD-CATHODE ELECTRON SOURCE DEVICE 失效
    MATRIX型冷阴极电子源设备

    公开(公告)号:US20110057555A1

    公开(公告)日:2011-03-10

    申请号:US12991005

    申请日:2009-04-27

    IPC分类号: H01J1/00

    摘要: A matrix-type cold-cathode electron source device includes: an emitter array (3b) in which a plurality of emitters are arranged, and a gate electrode (5) opposed to the emitter array (3b). The gate electrode (5) includes: an emitter area gate electrode (5c) opposed to the emitter array (3b); a gate address electrode (5a) connecting the emitter area gate electrode (5c) to a gate signal wire (8a); and a high-resistance area (5b) disposed between the gate address electrode (5a) and the emitter area gate electrode (5c).

    摘要翻译: 矩阵型冷阴极电子源器件包括:布置有多个发射极的发射极阵列(3b)和与发射极阵列(3b)相对的栅电极(5)。 栅极(5)包括:与发射极阵列(3b)相对的发射极区域栅电极(5c); 将所述发射极区域栅电极(5c)连接到栅极信号线(8a)的栅极寻址电极(5a); 以及设置在栅极寻址电极(5a)和发射极区域栅电极(5c)之间的高电阻区域(5b)。

    Mesh structure and field-emission electron source apparatus using the same
    9.
    发明授权
    Mesh structure and field-emission electron source apparatus using the same 有权
    网格结构和场致发射电子源装置使用

    公开(公告)号:US07825591B2

    公开(公告)日:2010-11-02

    申请号:US11706939

    申请日:2007-02-13

    IPC分类号: H05H7/00

    摘要: An electron beam emitted from a field-emission electron source array passes through a plurality of through holes formed in a mesh structure and reaches a target. Each of the plurality of through holes in the mesh structure has an opening on a side of the field-emission electron source array and an electron beam passageway that continues from the opening. The mesh structure is formed of a silicon-containing material doped with a N-type or P-type material. In this way, it is possible to suppress a decrease in the amount of the electron beam reaching the target while securing a mechanical strength of an electrode provided with a large number of through holes, and suppress expansion of the electron beam on the target.

    摘要翻译: 从场发射电子源阵列发射的电子束通过形成在网状结构中的多个通孔并达到目标。 网格结构中的多个通孔中的每一个在场致发射电子源阵列的一侧具有开口,以及从开口延续的电子束通道。 网状结构由掺杂有N型或P型材料的含硅材料形成。 以这种方式,可以在确保具有大量通孔的电极的机械强度的同时,抑制到达目标的电子束的量的减少,并且抑制电子束在靶上的膨胀。

    Matrix-type cold-cathode electron source device
    10.
    发明授权
    Matrix-type cold-cathode electron source device 失效
    矩阵型冷阴极电子源装置

    公开(公告)号:US08384281B2

    公开(公告)日:2013-02-26

    申请号:US12991005

    申请日:2009-04-27

    IPC分类号: H01J1/30 H01J1/304 H01J1/46

    摘要: A matrix-type cold-cathode electron source device includes: an emitter array (3b) in which a plurality of emitters are arranged, and a gate electrode (5) opposed to the emitter array (3b). The gate electrode (5) includes: an emitter area gate electrode (5c) opposed to the emitter array (3b); a gate address electrode (5a) connecting the emitter area gate electrode (5c) to a gate signal wire (8a); and a high-resistance area (5b) disposed between the gate address electrode (5a) and the emitter area gate electrode (5c).

    摘要翻译: 矩阵型冷阴极电子源器件包括:布置有多个发射极的发射极阵列(3b)和与发射极阵列(3b)相对的栅电极(5)。 栅极(5)包括:与发射极阵列(3b)相对的发射极区域栅电极(5c); 将所述发射极区域栅电极(5c)连接到栅极信号线(8a)的栅极寻址电极(5a); 以及设置在栅极寻址电极(5a)和发射极区域栅电极(5c)之间的高电阻区域(5b)。