公开(公告)号：US09396911B2

公开(公告)日：2016-07-19

申请号：US13430905

申请日：2012-03-27

申请人： Keisuke Tanaka ,  Kazuo Sawai ,  Hiroshi Nagahata

发明人： Keisuke Tanaka ,  Kazuo Sawai ,  Hiroshi Nagahata

IPC分类号： H01J37/32 ,  H01L21/3065

CPC分类号： H01J37/32642 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32724 ,  H01J37/32807 ,  H01J37/3288 ,  H01J37/32972 ,  H01J37/3299 ,  H01J2237/334 ,  H01J2237/3343 ,  H01L21/3065

摘要： A determination method, a control method, a determination apparatus, a pattern forming system, and a storage medium can determine a replacement time of a focus ring accurately and quickly. The determination method is capable of determining the replacement time of a focus ring that surrounds a substrate to increase uniformity of a pattern in a surface of the substrate when the pattern is formed by etching a film on the substrate. The determination method includes measuring a shape or a critical dimension of the pattern; and determining the replacement time of the focus ring based on the measured shape or the measured critical dimension of the pattern.

摘要翻译： 确定方法，控制方法，确定装置，图案形成系统和存储介质可以准确且快速地确定对焦环的更换时间。 确定方法能够确定围绕衬底的聚焦环的更换时间，以通过在衬底上蚀刻膜形成图案来增加衬底表面中的图案的均匀性。 确定方法包括测量图案的形状或临界尺寸; 以及基于测量的形状或所测量的图案的临界尺寸来确定聚焦环的替换时间。

公开(公告)号：US20120249986A1

公开(公告)日：2012-10-04

申请号：US13430905

申请日：2012-03-27

申请人： Keisuke Tanaka ,  Kazuo Sawai ,  Hiroshi Nagahata

发明人： Keisuke Tanaka ,  Kazuo Sawai ,  Hiroshi Nagahata

IPC分类号： G03B27/52

CPC分类号： H01J37/32642 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32724 ,  H01J37/32807 ,  H01J37/3288 ,  H01J37/32972 ,  H01J37/3299 ,  H01J2237/334 ,  H01J2237/3343 ,  H01L21/3065

摘要： A determination method, a control method, a determination apparatus, a pattern forming system, and a storage medium can determine a replacement time of a focus ring accurately and quickly. The determination method is capable of determining the replacement time of a focus ring that surrounds a substrate to increase uniformity of a pattern in a surface of the substrate when the pattern is formed by etching a film on the substrate. The determination method includes measuring a shape or a critical dimension of the pattern; and determining the replacement time of the focus ring based on the measured shape or the measured critical dimension of the pattern.

摘要翻译： 确定方法，控制方法，确定装置，图案形成系统和存储介质可以准确且快速地确定对焦环的更换时间。 确定方法能够确定围绕衬底的聚焦环的更换时间，以通过在衬底上蚀刻膜形成图案来增加衬底表面中的图案的均匀性。 确定方法包括测量图案的形状或临界尺寸; 以及基于测量的形状或所测量的图案的临界尺寸来确定聚焦环的替换时间。

公开(公告)号：US08500950B2

公开(公告)日：2013-08-06

申请号：US13114329

申请日：2011-05-24

申请人： Kazuo Sawai ,  Akihiro Sonoda

发明人： Kazuo Sawai ,  Akihiro Sonoda

IPC分类号： H01L21/306 ,  H01L21/3063 ,  H01L21/3065 ,  H01L21/308

CPC分类号： G03F7/70641 ,  H01L21/31144 ,  H01L22/12 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method includes forming a resist film on an etching target layer disposed on a test substrate, and performing sequential light exposure with a predetermined test pattern on the resist film sequentially at a plurality of areas, while respectively using different combinations of a light exposure amount and a focus value, along with subsequent development, thereby forming resist patterns at the plurality of areas; then etching the etching target layer, removing the resist patterns, and measuring shapes of etched patterns at the plurality of areas by means of a scatterometory technique; and determining a management span of combinations of a light exposure amount and a focus value admissible to obtain an etched pattern with a predetermined shape, with reference to the light exposure amounts and focus values used in the sequential light exposure, the line widths of the resist patterns, and the line widths of the etched patterns.

摘要翻译： 一种方法包括在设置在测试基板上的蚀刻目标层上形成抗蚀剂膜，并且在多个区域上顺序地在抗蚀剂膜上以预定的测试图案顺序曝光，同时分别使用曝光量和 焦点值，随后的发展，从而在多个区域形成抗蚀剂图案; 然后通过散射计技术蚀刻蚀刻目标层，去除抗蚀剂图案，并测量多个区域处的蚀刻图案的形状; 并且确定曝光量和焦点值的组合的管理范围，以参考在顺序曝光中使用的曝光量和聚焦值来获得具有预定形状的蚀刻图案，抗蚀剂的线宽度 图案和蚀刻图案的线宽。

公开(公告)号：US07960078B2

公开(公告)日：2011-06-14

申请号：US11718760

申请日：2005-11-08

申请人： Kazuo Sawai ,  Akihiro Sonoda

发明人： Kazuo Sawai ,  Akihiro Sonoda

IPC分类号： G03C5/00 ,  G03F1/00 ,  G06K9/00

CPC分类号： G03F7/70641 ,  H01L21/31144 ,  H01L22/12 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method includes forming a resist film on an etching target layer disposed on a test substrate, and performing sequential light exposure with a predetermined test pattern on the resist film sequentially at a plurality of areas, while respectively using different combinations of a light exposure amount and a focus value, along with subsequent development, thereby forming resist patterns at the plurality of areas; then etching the etching target layer, removing the resist patterns, and measuring shapes of etched patterns at the plurality of areas by means of a scatterometory technique; and determining a management span of combinations of a light exposure amount and a focus value admissible to obtain an etched pattern with a predetermined shape, with reference to the light exposure amounts and focus values used in the sequential light exposure, the line widths of the resist patterns, and the line widths of the etched patterns.

摘要翻译： 一种方法包括在设置在测试基板上的蚀刻目标层上形成抗蚀剂膜，并且在多个区域上顺序地在抗蚀剂膜上以预定的测试图案顺序曝光，同时分别使用曝光量和 焦点值，随后的发展，从而在多个区域形成抗蚀剂图案; 然后通过散射计技术蚀刻蚀刻目标层，去除抗蚀剂图案，并测量多个区域处的蚀刻图案的形状; 并且确定曝光量和焦点值的组合的管理范围，以参考在顺序曝光中使用的曝光量和聚焦值来获得具有预定形状的蚀刻图案，抗蚀剂的线宽度 图案和蚀刻图案的线宽。

公开(公告)号：US08007968B2

公开(公告)日：2011-08-30

申请号：US12307971

申请日：2007-07-25

申请人： Yoshiaki Yamada ,  Tadayuki Yamaguchi ,  Yuuichi Yamamoto ,  Yasuhito Saiga ,  Kazuo Sawai

发明人： Yoshiaki Yamada ,  Tadayuki Yamaguchi ,  Yuuichi Yamamoto ,  Yasuhito Saiga ,  Kazuo Sawai

IPC分类号： G03C5/00 ,  G03F9/00

CPC分类号： H01L21/31144 ,  H01L21/0274 ,  H01L21/0276

摘要： In the present invention, patterning for the first time is performed on a film to be worked above the front surface of a substrate, and the actual dimension of the pattern formed by the patterning for the first time is measured. Based on the dimension measurement result of the patterning or the first time, the condition of patterning for the second time is then set. In this event, the condition of the patterning for the second time is set so that a difference between the dimension of the patterning for the first time and its target dimension is equal to a difference between the dimension of the patterning for the second time and its target dimension. Thereafter, the patterning for the second time is performed under the set patterning condition.

摘要翻译： 在本发明中，首先对基板表面的被加工膜进行第一次的图案化，并且测量通过第一次图案化形成的图案的实际尺寸。 基于图案化或第一次的尺寸测量结果，然后设置第二次的图案化条件。 在这种情况下，第二次图案化的条件被设定为使得第一次图案化的尺寸与其目标尺寸之间的差异等于第二次图案化的尺寸与其之间的差异 目标维度。 此后，在设定的图案化条件下进行第二次的图案化。

公开(公告)号：US20090258304A1

公开(公告)日：2009-10-15

申请号：US12307971

申请日：2007-07-25

申请人： Yoshiaki Yamada ,  Tadayuki Yamaguchi ,  Yuuichi Yamamoto ,  Yasuhito Saiga ,  Kazuo Sawai

发明人： Yoshiaki Yamada ,  Tadayuki Yamaguchi ,  Yuuichi Yamamoto ,  Yasuhito Saiga ,  Kazuo Sawai

IPC分类号： G03F7/20 ,  G06F17/50

CPC分类号： H01L21/31144 ,  H01L21/0274 ,  H01L21/0276

摘要： In the present invention, patterning for the first time is performed on a film to be worked above the front surface of a substrate, and the actual dimension of the pattern formed by the patterning for the first time is measured. Based on the dimension measurement result of the patterning or the first time, the condition of patterning for the second time is then set. In this event, the condition of the patterning for the second time is set so that a difference between the dimension of the patterning for the first time and its target dimension is equal to a difference between the dimension of the patterning for the second time and its target dimension. Thereafter, the patterning for the second time is performed under the set patterning condition.

摘要翻译： 在本发明中，首先对基板表面的被加工膜进行第一次的图案化，并且测量通过第一次图案化形成的图案的实际尺寸。 基于图案化或第一次的尺寸测量结果，然后设置第二次的图案化条件。 在这种情况下，第二次图案化的条件被设定为使得第一次图案化的尺寸与其目标尺寸之间的差异等于第二次图案化的尺寸与其之间的差异 目标维度。 此后，在设定的图案化条件下进行第二次的图案化。

公开(公告)号：US20070298335A1

公开(公告)日：2007-12-27

申请号：US11718760

申请日：2005-11-08

申请人： Kazuo Sawai ,  Akihiro Sonoda

发明人： Kazuo Sawai ,  Akihiro Sonoda

IPC分类号： G03C5/00 ,  G21K5/10

CPC分类号： G03F7/70641 ,  H01L21/31144 ,  H01L22/12 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method includes forming a resist film on an etching target layer disposed on a test substrate, and performing sequential light exposure with a predetermined test pattern on the resist film sequentially at a plurality of areas, while respectively using different combinations of a light exposure amount and a focus value, along with subsequent development, thereby forming resist patterns at the plurality of areas; then etching the etching target layer, removing the resist patterns, and measuring shapes of etched patterns at the plurality of areas by means of a scatterometory technique; and determining a management span of combinations of a light exposure amount and a focus value admissible to obtain an etched pattern with a predetermined shape, with reference to the light exposure amounts and focus values used in the sequential light exposure, the line widths of the resist patterns, and the line widths of the etched patterns.

摘要翻译： 一种方法包括在设置在测试基板上的蚀刻目标层上形成抗蚀剂膜，并且在多个区域上顺序地在抗蚀剂膜上以预定的测试图案顺序曝光，同时分别使用曝光量和 焦点值，随后的发展，从而在多个区域形成抗蚀剂图案; 然后通过散射计技术蚀刻蚀刻目标层，去除抗蚀剂图案，并测量多个区域处的蚀刻图案的形状; 并且确定曝光量和焦点值的组合的管理范围，以参考在顺序曝光中使用的曝光量和聚焦值来获得具有预定形状的蚀刻图案，抗蚀剂的线宽度 图案和蚀刻图案的线宽。