公开(公告)号：US06300043B1

公开(公告)日：2001-10-09

申请号：US09200742

申请日：1998-11-30

申请人： Nobuo Konishi ,  Keizo Hirose

发明人： Nobuo Konishi ,  Keizo Hirose

IPC分类号： G03F700

CPC分类号： G03F7/168 ,  G03F7/162 ,  G03F7/26

摘要： A method of forming a resist film comprises (a) forming a resist film on a substrate, and (b) removing a surface region of the resist film formed in the step (a) so as to decrease the thickness of the resist film.

摘要翻译： 形成抗蚀剂膜的方法包括：（a）在基板上形成抗蚀剂膜，和（b）去除在步骤（a）中形成的抗蚀剂膜的表面区域，以降低抗蚀剂膜的厚度。

公开(公告)号：US6012858A

公开(公告)日：2000-01-11

申请号：US124893

申请日：1998-07-30

申请人： Nobuo Konishi ,  Keizo Hirose

发明人： Nobuo Konishi ,  Keizo Hirose

IPC分类号： B05C11/08 ,  B05D1/00 ,  G03F7/30 ,  H01L21/027 ,  G03D5/00

CPC分类号： B05C11/08 ,  B05D1/005 ,  G03F7/3021 ,  G03F7/3057

摘要： A liquid film formation apparatus comprises a substrate holding portion for holding a substrate substantially horizontally so as to allow a pattern-to-be-formed surface to face upward, a liquid-receiving base surrounding the substrate held by the substrate holding portion and having a liquid-receiving face which is placed at substantially the same level as that of an upper surface of the substrate, a supply nozzle having a process-liquid spray section whose length is equal to or longer than the width of an effective region of the substrate, and a moving mechanism for moving the supply nozzle in the direction perpendicular to the longitudinal direction of the supply nozzle, in which the substrate holding portion seals a slit formed between the liquid-receiving base and the outer peripheral portion of the substrate so as not to leak out the process solution from the slit, and the process solution is supplied from the supply nozzle to the liquid-receiving base to mount the process solution on the liquid-receiving base, and the process solution is subsequently mounted over an entire surface of the substrate by spraying the process solution from the supply nozzle while moving the supply nozzle.

摘要翻译： 液体成膜装置包括：基板保持部分，用于基本上水平地保持基板，以允许图案形成表面朝上;围绕基板保持部分保持的基板的液体接收基底， 液体接收面设置在与基板的上表面大致相同的水平面上;供给喷嘴，其具有长度等于或大于基板的有效区域的宽度的处理液喷射部， 以及移动机构，用于沿与供给喷嘴的纵向方向垂直的方向移动供给喷嘴，其中，基板保持部分密封形成在液体接收基底和基板的外周部分之间的狭缝，以便不 从狭缝中泄漏处理溶液，并且将工艺溶液从供应喷嘴供应到液体接收基底以安装工艺溶液 n，并且随后在移动供给喷嘴的同时通过从供给喷嘴喷射处理溶液将处理液安装在基板的整个表面上。

公开(公告)号：US06431258B1

公开(公告)日：2002-08-13

申请号：US09708631

申请日：2000-11-09

申请人： Nobuo Konishi ,  Keizo Hirose

发明人： Nobuo Konishi ,  Keizo Hirose

IPC分类号： F28F700

CPC分类号： H01L21/6715 ,  B05C11/08 ,  B05C11/1002 ,  B05C11/101 ,  B05C11/1042

摘要： A process solution supplying mechanism for supplying a process solution to a wafer, comprises a source for containing the process solution, a pipe for introducing the process solution from the source to the wafer, a process solution supply driving system for supplying the process solution from the source to the wafer, and a process solution supplying/stopping mechanism for carrying out apply and stop of the process solution, wherein the pipe and the process solution supply driving system are provided separately and the process solution supplying/stopping mechanism is provided to a portion other than the pipe.

公开(公告)号：US06385805B2

公开(公告)日：2002-05-14

申请号：US09253037

申请日：1999-02-19

申请人： Nobuo Konishi ,  Kenji Sekiguchi ,  Keizo Hirose

发明人： Nobuo Konishi ,  Kenji Sekiguchi ,  Keizo Hirose

IPC分类号： A46B1302

CPC分类号： H01L21/67051 ,  B08B1/04 ,  B08B3/12 ,  H01L21/67046 ,  Y10S134/902

摘要： A scrubbing apparatus is provided which sufficiently cleans every site on the wafer by a cleaning accelerating action of ultrasonic waves, the scrubbing apparatus comprising a substrate support section for supporting a substrate horizontally and substantially in contact with a circumferential portion of the substrate while front side and back side surfaces of the substrate are substantially kept untouched in operation by the substrate, rotation drive means for driving the substrate support section to rotate in order to give a rotation force to the substrate, a brush for scrub-cleaning the substrate while contacting at least the front surface, a main nozzle provided with a first supply circuit for supplying a-cleaning liquid in at least a central region of the substrate, an auxiliary nozzle provided with a second supply circuit for supplying the cleaning liquid in at least a peripheral region of the substrate, and an ultrasonic oscillator for applying ultrasonic waves to the cleaning liquid supplied on the substrate from an auxiliary nozzle.

摘要翻译： 提供一种洗涤装置，其通过超声波的清洁加速作用充分清洁晶片上的每个位置，该洗涤装置包括：衬底支撑部分，用于在前侧侧面水平地支撑衬底并基本上与衬底的圆周部分接触; 衬底的背侧表面基本上保持在基板的操作中;旋转驱动装置，用于驱动基板支撑部分旋转以便向基板施加旋转力;刷子，用于擦洗基板，同时至少接触 前表面，设置有用于在至少基板的中心区域中供应清洗液体的第一供给回路的主喷嘴，设置有第二供给回路的辅助喷嘴，该第二供给回路用于将清洗液供给至至少周边区域 所述基板以及用于向所述清洗液施加超声波的超声波振荡器 从辅助喷嘴在基板上提供。

公开(公告)号：US6165270A

公开(公告)日：2000-12-26

申请号：US105166

申请日：1998-06-26

申请人： Nobuo Konishi ,  Keizo Hirose

发明人： Nobuo Konishi ,  Keizo Hirose

IPC分类号： B05C11/08 ,  B05C11/10 ,  H01L21/00 ,  B05C11/00

CPC分类号： H01L21/6715 ,  B05C11/08 ,  B05C11/1002 ,  B05C11/101 ,  B05C11/1042

摘要： A process solution supplying mechanism for supplying a process solution to a wafer, comprises a source for containing the process solution, a pipe for introducing the process solution from the source to the wafer, a process solution supply driving system for supplying the process solution from the source to the wafer, and a process solution supplying/stopping mechanism for carrying out apply and stop of the process solution, wherein the pipe and the process solution supply driving system are provided separately and the process solution supplying/stopping mechanism is provided to a portion other than the pipe.

公开(公告)号：US08080126B2

公开(公告)日：2011-12-20

申请号：US12195842

申请日：2008-08-21

申请人： Akira Koshiishi ,  Keizo Hirose

发明人： Akira Koshiishi ,  Keizo Hirose

IPC分类号： H01L21/00

CPC分类号： H01J37/3255 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32165 ,  H01J2237/3323

摘要： In the plasma processing apparatus of the present invention, a first electrode for connecting a high frequency electric power source in a chamber is arranged to be opposed to a second electrode. A substrate (W) to be processed is placed between the electrodes. There is provided a harmonic absorbing member for being able to absorb harmonics of the high frequency electric power source so as to come in contact with a peripheral portion or circumference of a face of the first electrode 21, which is opposite the second electrode. The harmonic absorbing member absorbs the reflected harmonic before the harmonic returns to the high frequency electric power source. By absorbing the harmonic in this manner, the standing wave due to the harmonic will be effectively prevented from being generated, and the density of plasma is made even.

摘要翻译： 在本发明的等离子体处理装置中，在室内连接高频电源的第一电极配置成与第二电极相对。 将待处理的基板（W）放置在电极之间。 提供了一种能够吸收高频电源的谐波的谐波吸收构件，以便与第二电极相对的第一电极21的面的周边部分或周边接触。 谐波吸收构件在谐波返回到高频电源之前吸收反射谐波。 通过以这种方式吸收谐波，将有效地防止由于谐波引起的驻波而产生等离子体的密度。

公开(公告)号：US20070148985A1

公开(公告)日：2007-06-28

申请号：US11648561

申请日：2007-01-03

申请人： Nobutaka Mizutani ,  Fitrianto . ,  Isao Tsukagoshi ,  Keizo Hirose ,  Satohiko Hoshino

发明人： Nobutaka Mizutani ,  Fitrianto . ,  Isao Tsukagoshi ,  Keizo Hirose ,  Satohiko Hoshino

IPC分类号： C23F1/00 ,  B44C1/22 ,  H01L21/311

CPC分类号： H01L21/76808 ,  H01L21/67178

摘要： A porous low-k film, a sacrificial film that can be dissolved in a pure water, an antireflection film and a resist film are successively formed on a dielectric film on a wafer and subsequently exposing the resist film to light in a prescribed pattern and developing the resist film so as to form a prescribed circuit pattern in the resist film. Then, the wafer W is etched so as to form a via hole in the porous low-k film, followed by processing the wafer with a hydrogen peroxide solution so as to denature the resist film. Further, the sacrificial film is dissolved in a pure water so as to strip the resist film and the antireflection film from the water. As a result, a via hole excellent in the accuracy of the shape is formed without doing damage to the dielectric film.

公开(公告)号：US06544380B2

公开(公告)日：2003-04-08

申请号：US10079600

申请日：2002-02-19

申请人： Masayuki Tomoyasu ,  Akira Koshiishi ,  Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose ,  Mitsuaki Komino ,  Hiroto Takenaka ,  Hiroshi Nishikawa ,  Yoshio Sakamoto

发明人： Masayuki Tomoyasu ,  Akira Koshiishi ,  Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose ,  Mitsuaki Komino ,  Hiroto Takenaka ,  Hiroshi Nishikawa ,  Yoshio Sakamoto

IPC分类号： H05H100

CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/4407 ,  C23C16/4483 ,  C23C16/4485 ,  C23C16/4557 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32963 ,  Y10S156/916

摘要： An apparatus for treating a substrate which includes a chamber and an opening formed in the chamber allowing the substrate to be conveyed into the chamber or taken out thereof. The chamber, also, includes a detachable baffle plate that fits around an electrode. For treatment to commence, the substrate is placed on the electrode and the chamber is exhausted of or supplied with gases. The electrode is then vertically lifted together with the baffle plate and the baffle plate is moved either to a position that is higher in level than an upper end of the opening of the chamber or to a position that is lower in level than a lower end of the opening of the chamber. This allows the baffle plate to shield a region near the opening of the chamber from a treatment region and allows reaction products to be adhered to the baffle plate.

摘要翻译： 一种用于处理基板的设备，其包括室和形成在所述室中的开口，使得所述基板被输送到所述室中或从其中取出。 该腔室还包括一个可拆卸的挡板，其围绕电极配合。 为了开始处理，将基板放置在电极上，并且室被排出或供应气体。 然后将电极与挡板一起垂直提升，并且挡板移动到比室的开口的上端更高的位置，或者移动到比下端更低的位置 房间的开放。 这允许挡板将腔室开口附近的区域与处理区域隔离，并允许反应产物粘附到挡板。

公开(公告)号：US07010826B2

公开(公告)日：2006-03-14

申请号：US09960413

申请日：2001-09-24

申请人： Keizo Hirose ,  Kenji Sekiguchi

发明人： Keizo Hirose ,  Kenji Sekiguchi

IPC分类号： B08B1/04

CPC分类号： H01L21/67057 ,  B08B1/04 ,  B08B3/04

摘要： A substrate cleaning tool having little particle sticking to the tool and a substrate cleaning apparatus having the substrate cleaning tool are provided. The substrate cleaning tool 23 has a plurality of thready brush members 46 in a bundle. The brush members 46 are capable of passing cleaning liquid through and ejecting the cleaning liquid through respective surfaces of the members 46. In operation, the substrate cleaning tool 23 is brought into contact with a substrate W in their relative movement in order to clean the substrate W. As the cleaning liquid is ejected from the surfaces of the brash members 46, particles are washed away from the surfaces of the brash members 46. Consequently, it is possible to eliminate a possibility that the particles etc. are transferred to the substrate W.

摘要翻译： 提供了具有很少的颗粒粘附到工具的基板清洁工具和具有基板清洁工具的基板清洁装置。 基板清洁工具23具有多个已经是一束的刷子构件46。 刷构件46能够将清洁液通过并通过构件46的相应表面喷射清洗液。 在操作中，基板清洁工具23在其相对运动中与基板W接触以便清洁基板W.随着清洁液体从刷毛构件46的表面喷射，颗粒被从表面 的刷子46。 因此，可以消除将颗粒等转移到基板W的可能性。

公开(公告)号：US6074518A

公开(公告)日：2000-06-13

申请号：US225010

申请日：1999-01-04

申请人： Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Hiroshi Tsuchiya ,  Masayuki Tomoyasu ,  Yukio Naito ,  Kazuya Nagaseki ,  Ryo Nonaka ,  Keizo Hirose ,  Yoshio Fukasawa ,  Akira Koshiishi ,  Isao Kobayashi

发明人： Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Hiroshi Tsuchiya ,  Masayuki Tomoyasu ,  Yukio Naito ,  Kazuya Nagaseki ,  Ryo Nonaka ,  Keizo Hirose ,  Yoshio Fukasawa ,  Akira Koshiishi ,  Isao Kobayashi

IPC分类号： H01J37/32 ,  C23F1/02 ,  C23C16/00

CPC分类号： H01J37/32623

摘要： A plasma processing apparatus comprises a chamber, and an upper electrode and a lower electrode, parallelly provided in the chamber to oppose each other at a predetermined interval, for defining a plasma generation region between the electrodes. An object to be processed is mounted on the lower electrode. RF powers are supplied to the electrodes, so that a plasma generates between the electrodes, thereby performing a plasma process with respect to the object to be processed. A cylindrical ground electrode is provided around the plasma generation region in the chamber, for enclosing the plasma in the plasma generation region, and has a plurality of through holes for passing a process gas.

摘要翻译： 等离子体处理装置包括室，以及上部电极和下部电极，其平行地设置在腔室中以预定间隔彼此相对，用于限定电极之间的等离子体产生区域。 被处理物体安装在下电极上。 向电极提供RF功率，使得在电极之间产生等离子体，从而对被处理物进行等离子体处理。 在室内的等离子体产生区域周围设置圆柱形接地电极，用于将等离子体封装在等离子体产生区域中，并具有用于通过处理气体的多个通孔。