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1.发明授权Optical semiconductor and method for producing the same, optical semiconductor device, photocatalyst, hydrogen producing device, and energy system 有权光半导体及其制造方法，光半导体装置，光催化剂，制氢装置，能源系统等公开(公告)号：US08663435B2
公开(公告)日：2014-03-04
申请号：US13482301
申请日：2012-05-29
申请人： Takahiro Suzuki , Takaiki Nomura , Satoru Tamura , Kazuhito Hato , Noboru Taniguchi , Kenichi Tokuhiro , Nobuhiro Miyata
发明人： Takahiro Suzuki , Takaiki Nomura , Satoru Tamura , Kazuhito Hato , Noboru Taniguchi , Kenichi Tokuhiro , Nobuhiro Miyata
IPC分类号： C25B9/00
CPC分类号： C01G33/00 , C01B3/042 , C01B21/0821 , C01B2203/066 , C01P2002/72 , C01P2002/84 , H01M8/0656 , Y02E60/364 , Y02P20/128 , Y02P70/56
摘要： The method for producing the optical semiconductor of the present disclosure includes a mixing step of producing a mixture containing a reduction inhibitor and a niobium compound that contains at least oxygen in its composition; a nitriding step of nitriding the mixture by the reaction between the mixture and a nitrogen compound gas; and a washing step of isolating niobium oxynitride from the material obtained through the nitriding step by dissolving chemical species other than niobium oxynitride with a washing liquid. The optical semiconductor of the present disclosure substantially consists of niobium oxynitride having a crystal structure of baddeleyite and having a composition represented by the composition formula, NbON.
摘要翻译： 本公开的光半导体的制造方法包括：混合工序，其制造含有还原抑制剂和至少含有氧的组合物的铌化合物的混合物; 通过混合物和氮化合物气体之间的反应氮化该混合物的氮化步骤; 以及从通过氮化步骤获得的材料通过用洗涤液溶解除了氮氧化铌之外的化学物质来分离氮氧化铌的洗涤步骤。 本公开的光半导体基本上由具有菱铁矿晶体结构的NbO的NbO的组成式表示的组成的氮氧化铌组成。
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2.发明申请PHOTOELECTRODE AND METHOD FOR PRODUCING SAME, PHOTOELECTROCHEMICAL CELL AND ENERGY SYSTEM USING SAME, AND HYDROGEN GENERATION METHOD 审中-公开用于制造它们的光电及其制造方法，使用它们的光电化学电池和能量系统以及氢生成方法公开(公告)号：US20140004435A1
公开(公告)日：2014-01-02
申请号：US14005156
申请日：2012-04-25
申请人： Satoru Tamura , Takaiki Nomura , Takahiro Suzuki , Kenichi Tokuhiro , Noboru Taniguchi , Kazuhito Hato , Nobuhiro Miyata
发明人： Satoru Tamura , Takaiki Nomura , Takahiro Suzuki , Kenichi Tokuhiro , Noboru Taniguchi , Kazuhito Hato , Nobuhiro Miyata
CPC分类号： C25B1/003 , B01J35/004 , C01B3/042 , C25B1/04 , C25B11/0405 , C25B11/0478 , H01G9/2027 , H01M8/0656 , H01M16/003 , Y02E10/542 , Y02E60/364 , Y02E60/366 , Y02P20/135 , Y02P70/521
摘要： A photoelectrode (100) of the present invention includes a conductive layer (12) and a photocatalytic layer (13) provided on the conductive layer (12). The conductive layer (12) is made of a metal nitride. The photocatalytic layer (13) is made of at least one selected from the group consisting of a nitride semiconductor and an oxynitride semiconductor. When the photocatalytic layer (13) is made of a n-type semiconductor, the energy difference between the vacuum level and the Fermi level of the conductive layer (12) is smaller than the energy difference between the vacuum level and the Fermi level of the photocatalytic layer (13).When the photocatalytic layer (13) is made of a p-type semiconductor, the energy difference between the vacuum level and the Fermi level of the conductive layer (12) is larger than the energy difference between the vacuum level and the Fermi level of the photocatalytic layer (13).
摘要翻译： 本发明的光电极（100）包括设置在导电层（12）上的导电层（12）和光催化层（13）。 导电层（12）由金属氮化物制成。 光催化层（13）由选自氮化物半导体和氧氮化物半导体中的至少一种制成。 当光催化层（13）由n型半导体制成时，导电层（12）的真空度与费米能级之间的能量差小于真空级与费米能级之间的能量差 光催化层（13）。 当光催化层（13）由p型半导体制成时，导电层（12）的真空度与费米能级之间的能量差大于真空度与费米能级之间的能量差 光催化层（13）。
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公开(公告)号：US20130316254A1
公开(公告)日：2013-11-28
申请号：US13984413
申请日：2012-02-29
申请人： Kenichi Tokuhiro , Takaiki Nomura , Takahiro Suzuki , Satoru Tamura , Nobuhiro Miyata , Noboru Taniguchi , Kazuhito Hato
发明人： Kenichi Tokuhiro , Takaiki Nomura , Takahiro Suzuki , Satoru Tamura , Nobuhiro Miyata , Noboru Taniguchi , Kazuhito Hato
CPC分类号： H01M8/04119 , H01M8/04029 , H01M8/04291 , H01M8/0606 , H01M8/0656 , H01M16/003 , Y02E60/364
摘要： An energy system includes an solar hydrogen producing unit (101) that produces hydrogen through decomposition of water by a photocatalytic effect, a fuel cell (103) that generates electricity by a reaction between the hydrogen produced by the solar hydrogen producing unit (101) and an oxidizing gas and discharges water as a reaction product, and a water distribution mechanism (104) that returns the water serving as the reaction product discharged from the fuel cell (103) to the solar hydrogen producing unit (101). With the configuration, an energy system that suppresses an amount of external water supply to a low level to achieve good water balance can be provided.
摘要翻译： 能量系统包括通过光催化作用分解水而产生氢的太阳能氢产生单元（101），通过由太阳能氢产生单元（101）产生的氢和 氧化气体并作为反应产物排出水;以及水分配机构（104），其将用作从燃料电池（103）排出的反应产物的水返回到太阳能氢产生单元（101）。 通过该结构，能够提供将外部供水量抑制到低水平以实现良好的水平衡的能量系统。
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公开(公告)号：US08758578B2
公开(公告)日：2014-06-24
申请号：US13260825
申请日：2010-08-05
CPC分类号： H01M14/005 , C25B1/003 , H01G9/205 , Y02E10/542 , Y02E60/364 , Y02P20/135
摘要： A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a substrate (121), a first n-type semiconductor layer (122) disposed on the substrate (121), and a second n-type semiconductor layer (123) and a conductor (124) disposed apart from each other on the first n-type semiconductor layer (122); a counter electrode (130) connected electrically to the conductor (124); an electrolyte (140) in contact with surfaces of the second n-type semiconductor layer (123) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140). In the semiconductor electrode (120), relative to a vacuum level, (I) band edge levels of a conduction band and a valence band in the second n-type semiconductor layer (123), respectively, are higher than band edge levels of a conduction band and a valence band in the first n-type semiconductor layer (122), (II) a Fermi level of the first n-type semiconductor layer (122) is higher than a Fermi level of the second n-type semiconductor layer (123), and (III) a Fermi level of the conductor (124) is higher than the Fermi level of the first n-type semiconductor layer (122). The photoelectrochemical cell (100) generates hydrogen by irradiation of the second n-type semiconductor layer (123) with light.
摘要翻译： 光电化学电池（100）包括：包括基板（121），设置在基板（121）上的第一n型半导体层（122）和第二n型半导体层（123））的半导体电极（120） 以及在所述第一n型半导体层（122）上彼此分离设置的导体（124）。 与所述导体（124）电连接的对电极（130）。 与第二n型半导体层（123）和对电极（130）的表面接触的电解液（140）; 以及容纳半导体电极（120），对电极（130）和电解质（140）的容器（110）。 在半导体电极（120）中，相对于真空度，第二n型半导体层（123）中的导带和价带的（I）带边缘电平分别高于 导电带和第一n型半导体层（122）中的价带，（II）第一n型半导体层（122）的费米能级高于第二n型半导体层（6）的费米能级 123），（III）导体（124）的费米能级高于第一n型半导体层（122）的费米能级。 光电化学电池（100）通过用光照射第二n型半导体层（123）产生氢。
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5.发明申请NbON FILM, METHOD FOR PRODUCING NbON FILM, HYDROGEN GENERATION DEVICE, AND ENERGY SYSTEM PROVIDED WITH SAME 有权铌膜，生产铌膜的方法，氢发生装置和具有相同能量的能量系统公开(公告)号：US20130192984A1
公开(公告)日：2013-08-01
申请号：US13876684
申请日：2012-08-01
CPC分类号： C25B11/0447 , B01J35/004 , C01B13/0207 , C23C16/308 , C23C16/405 , C25B1/003 , C25B1/04 , C25B9/00 , H01M8/0656 , Y02E60/364 , Y02E60/368 , Y02E60/50
摘要： The NbON film of the present invention is a NbON film in which a photocurrent is generated by light irradiation. The NbON film of the present invention is desirably a single-phase film. The hydrogen generation device (600) of the present invention includes: an optical semiconductor electrode (620) including a conductor (621) and the NbON film (622) of the present invention disposed on the conductor (621); a counter electrode (630) connected electrically to the conductor (621); a water-containing electrolyte (640) disposed in contact with a surface of the NbON film (622) and a surface of the counter electrode (630); and a container (610) containing the optical semiconductor electrode (620), the counter electrode (630), and the electrolyte (640). In this device, hydrogen is generated by irradiating the NbON film (622) with light.
摘要翻译： 本发明的NbON膜是通过光照射产生光电流的NbON膜。 本发明的NbON膜优选为单相膜。 本发明的氢生成装置（600）包括：配置在导体（621）上的本发明的导体（621）和NbON膜（622）的光学半导体电极（620） 与所述导体（621）电连接的对电极（630）。 与所述NbON膜（622）的表面和所述对置电极（630）的表面接触地配置的含水电解质（640）。 和包含光学半导体电极（620），对电极（630）和电解质（640）的容器（610）。 在该装置中，通过用光照射NbON膜（622）来产生氢。
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公开(公告)号：US09353449B2
公开(公告)日：2016-05-31
申请号：US13876684
申请日：2012-08-01
IPC分类号： B05D5/12 , C23C16/00 , C25B11/04 , C01B13/02 , C23C16/30 , C23C16/40 , C25B1/00 , C25B1/04 , C25B9/00 , H01M8/06 , B01J35/00
CPC分类号： C25B11/0447 , B01J35/004 , C01B13/0207 , C23C16/308 , C23C16/405 , C25B1/003 , C25B1/04 , C25B9/00 , H01M8/0656 , Y02E60/364 , Y02E60/368 , Y02E60/50
摘要： The NbON film of the present invention is a NbON film in which a photocurrent is generated by light irradiation. The NbON film of the present invention is desirably a single-phase film. The hydrogen generation device (600) of the present invention includes: an optical semiconductor electrode (620) including a conductor (621) and the NbON film (622) of the present invention disposed on the conductor (621); a counter electrode (630) connected electrically to the conductor (621); a water-containing electrolyte (640) disposed in contact with a surface of the NbON film (622) and a surface of the counter electrode (630); and a container (610) containing the optical semiconductor electrode (620), the counter electrode (630), and the electrolyte (640). In this device, hydrogen is generated by irradiating the NbON film (622) with light.
摘要翻译： 本发明的NbON膜是通过光照射产生光电流的NbON膜。 本发明的NbON膜优选为单相膜。 本发明的氢生成装置（600）包括：配置在导体（621）上的本发明的导体（621）和NbON膜（622）的光学半导体电极（620） 与所述导体（621）电连接的对电极（630）。 与所述NbON膜（622）的表面和所述对置电极（630）的表面接触地配置的含水电解质（640）。 和包含光学半导体电极（620），对电极（630）和电解质（640）的容器（610）。 在该装置中，通过用光照射NbON膜（622）来产生氢。
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7.发明授权Optical semiconductor, optical semiconductor electrode using same, photoelectrochemical cell, and energy system 有权光半导体，使用其的光半导体电极，光电化学电池和能量系统公开(公告)号：US08853685B2
公开(公告)日：2014-10-07
申请号：US13575770
申请日：2011-03-03
IPC分类号： H01L29/12 , C01B21/082 , C25B1/00 , H01M8/06
CPC分类号： H01M8/0656 , C01B21/0821 , C01P2002/72 , C01P2002/77 , C01P2002/84 , C01P2002/85 , C04B35/453 , C04B35/58 , C04B35/62675 , C04B2235/3284 , C04B2235/3286 , C04B2235/46 , C04B2235/76 , C04B2235/80 , C04B2235/81 , C25B1/003 , Y02E60/364 , Y02E60/366 , Y02E60/50
摘要： The optical semiconductor of the present invention is an optical semiconductor containing In, Ga, Zn, O and N, and has a composition in which a part of oxygen (O) is substituted by nitrogen (N) in a general formula: In2xGa2(1-x)O3(ZnO)y, where x and y satisfy 0.2
摘要翻译： 本发明的光学半导体是含有In，Ga，Zn，O和N的光学半导体，其通式为：In 2 x Ga 2（1）中的一部分氧（O）被氮（N）取代的组成 -x）O 3（ZnO）y，其中x和y满足0.2
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8.发明申请OPTICAL SEMICONDUCTOR, OPTICAL SEMICONDUCTOR ELECTRODE USING SAME, PHOTOELECTROCHEMICAL CELL, AND ENERGY SYSTEM 有权光学半导体，使用其的光学半导体电极，光电化学电池和能量系统公开(公告)号：US20120292618A1
公开(公告)日：2012-11-22
申请号：US13575770
申请日：2011-03-03
IPC分类号： H01L31/0248
CPC分类号： H01M8/0656 , C01B21/0821 , C01P2002/72 , C01P2002/77 , C01P2002/84 , C01P2002/85 , C04B35/453 , C04B35/58 , C04B35/62675 , C04B2235/3284 , C04B2235/3286 , C04B2235/46 , C04B2235/76 , C04B2235/80 , C04B2235/81 , C25B1/003 , Y02E60/364 , Y02E60/366 , Y02E60/50
摘要： The optical semiconductor of the present invention is an optical semiconductor containing In, Ga, Zn, O and N, and has a composition in which a part of oxygen (O) is substituted by nitrogen (N) in a general formula: In2xGa2(1-x)O3(ZnO)y, where x and y satisfy 0.2
摘要翻译： 本发明的光学半导体是含有In，Ga，Zn，O和N的光学半导体，其通式为：In 2 x Ga 2（1）中的一部分氧（O）被氮（N）取代的组成 -x）O 3（ZnO）y，其中x和y满足0.2
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公开(公告)号：US20120028141A1
公开(公告)日：2012-02-02
申请号：US13260825
申请日：2010-08-05
CPC分类号： H01M14/005 , C25B1/003 , H01G9/205 , Y02E10/542 , Y02E60/364 , Y02P20/135
摘要： A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a substrate (121), a first n-type semiconductor layer (122) disposed on the substrate (121), and a second n-type semiconductor layer (123) and a conductor (124) disposed apart from each other on the first n-type semiconductor layer (122); a counter electrode (130) connected electrically to the conductor (124); an electrolyte (140) in contact with surfaces of the second n-type semiconductor layer (123) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140). In the semiconductor electrode (120), relative to a vacuum level, (I) band edge levels of a conduction band and a valence band in the second n-type semiconductor layer (123), respectively, are higher than band edge levels of a conduction band and a valence band in the first n-type semiconductor layer (122), (II) a Fermi level of the first n-type semiconductor layer (122) is higher than a Fermi level of the second n-type semiconductor layer (123), and (III) a Fermi level of the conductor (124) is higher than the Fermi level of the first n-type semiconductor layer (122). The photoelectrochemical cell (100) generates hydrogen by irradiation of the second n-type semiconductor layer (123) with light.
摘要翻译： 光电化学电池（100）包括：包括基板（121），设置在基板（121）上的第一n型半导体层（122）和第二n型半导体层（123））的半导体电极（120） 以及在所述第一n型半导体层（122）上彼此分离设置的导体（124）。 与所述导体（124）电连接的对电极（130）。 与第二n型半导体层（123）和对电极（130）的表面接触的电解液（140）; 以及容纳半导体电极（120），对电极（130）和电解质（140）的容器（110）。 在半导体电极（120）中，相对于真空度，第二n型半导体层（123）中的导带和价带的（I）带边缘电平分别高于 导电带和第一n型半导体层（122）中的价带，（II）第一n型半导体层（122）的费米能级高于第二n型半导体层（6）的费米能级 123），（III）导体（124）的费米能级高于第一n型半导体层（122）的费米能级。 光电化学电池（100）通过用光照射第二n型半导体层（123）产生氢。
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公开(公告)号：US4653854A
公开(公告)日：1987-03-31
申请号：US708253
申请日：1985-03-05
申请人： Nobuhiro Miyata
发明人： Nobuhiro Miyata
CPC分类号： G02B5/128
摘要： A reflex-reflecting sheeting of a type having on the surface of the sheeting many isolated small compartments which are respectively hermetically sealed in the form of cells is characterized in the structure in which a support film comprises an upper layer which is in contact with glass beads and a lower layer disposed on the opposite side and having larger cohesive force and rubbery elasticity than the upper layer, and a protective film made of a substantially unoriented resin. The sheeting thus constructed exhibits strong resistance against separation of the protective film and the support film even under high temperature and humidity.
摘要翻译： 一种具有在片材表面上的许多隔离的小室的反射反射片材分别以细胞形式密封，其特征在于支撑膜包括与玻璃珠接触的上层 以及设置在相反侧并具有比上层更大的内聚力和橡胶弹性的下层，以及由基本上未取向的树脂制成的保护膜。 这样构成的片材即使在高温和高湿下也能够显着地抵抗保护膜和支撑膜的分离。
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