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    Refractive index variable element
    2.
    发明授权
    Refractive index variable element 有权
    折射率可变元件

    公开(公告)号：US07732806B2

    公开(公告)日：2010-06-08

    申请号：US11441092

    申请日：2006-05-26

    申请人： Reiko Yoshimura ,  Hideyuki Nishizawa ,  Kenji Todori ,  Ko Yamada ,  Fumihiko Aiga ,  Tsukasa Tada

    发明人： Reiko Yoshimura ,  Hideyuki Nishizawa ,  Kenji Todori ,  Ko Yamada ,  Fumihiko Aiga ,  Tsukasa Tada

    IPC分类号： H01L31/00

    CPC分类号： G02F1/0018 ,  B82Y10/00 ,  B82Y20/00 ,  G02F2001/01791 ,  G02F2202/13 ,  Y10S977/774 ,  Y10S977/778 ,  Y10S977/81 ,  Y10S977/932

    摘要： A refractive index variable element has a structure including a solid matrix, and one or more types of quantum dots dispersed in the solid matrix and having discrete occupied and unoccupied electron energy levels. The quantum dots perform a function of generating a pair of positive and negative charges upon irradiation with light, a function of trapping a positive charge, and a function of trapping a negative charge. The quantum dots performing the function of trapping a negative charge are selected from the group consisting of a combination of a negatively charged accepter and a positively charged atom, where the outermost electron shell of the positively charged atom is fully filled with electrons so that an additional electron occupies an upper different shell orbital when receives an electron, a metal chelate complex, and metallocene and derivatives thereof.

    摘要翻译： 折射率可变元件具有包括固体基质和分散在固体基质中的一种或多种类型的量子点并且具有离散的占据和未占据的电子能级的结构。 量子点执行在用光照射时产生一对正电荷和负电荷的功能，捕获正电荷的功能以及捕获负电荷的功能。 执行捕获负电荷的功能的量子点从由带负电的正电荷和带正电的原子的组合组成的组中选择，其中带正电的原子的最外面的电子壳完全充满电子，使得附加 当接收电子时，电子占据上部不同的壳轨道，金属螯合络合物，茂金属及其衍生物。

    Refractive index variable element
    3.
    发明申请
    Refractive index variable element 有权
    折射率可变元件

    公开(公告)号：US20060279833A1

    公开(公告)日：2006-12-14

    申请号：US11441092

    申请日：2006-05-26

    申请人： Reiko Yoshimura ,  Hideyuki Nishizawa ,  Kenji Todori ,  Ko Yamada ,  Fumihiko Aiga ,  Tsukasa Tada

    发明人： Reiko Yoshimura ,  Hideyuki Nishizawa ,  Kenji Todori ,  Ko Yamada ,  Fumihiko Aiga ,  Tsukasa Tada

    IPC分类号： G02F1/00

    CPC分类号： G02F1/0018 ,  B82Y10/00 ,  B82Y20/00 ,  G02F2001/01791 ,  G02F2202/13 ,  Y10S977/774 ,  Y10S977/778 ,  Y10S977/81 ,  Y10S977/932

    摘要： A refractive index variable element has a structure including a solid matrix, and one or more types of quantum dots dispersed in the solid matrix and having discrete occupied and unoccupied electron energy levels. The quantum dots perform a function of generating a pair of positive and negative charges upon irradiation with light, a function of trapping a positive charge, and a function of trapping a negative charge. The quantum dots performing the function of trapping a negative charge are selected from the group consisting of a combination of a negatively charged accepter and a positively charged atom, where the outermost electron shell of the positively charged atom is fully filled with electrons so that an additional electron occupies an upper different shell orbital when receives an electron, a metal chelate complex, and metallocene and derivatives thereof.

    摘要翻译： 折射率可变元件具有包括固体基质和分散在固体基质中的一种或多种类型的量子点并且具有离散的占据和未占据的电子能级的结构。 量子点执行在用光照射时产生一对正电荷和负电荷的功能，捕获正电荷的功能以及捕获负电荷的功能。 执行捕获负电荷的功能的量子点从由带负电的正电荷和带正电的原子的组合组成的组中选择，其中带正电的原子的最外面的电子壳完全充满电子，使得附加 当接收电子时，电子占据上部不同的壳轨道，金属螯合络合物，茂金属及其衍生物。

    Photoconductor for xerography
    4.
    发明授权
    Photoconductor for xerography 失效
    用于静电复印的感光体

    公开(公告)号：US5422706A

    公开(公告)日：1995-06-06

    申请号：US780930

    申请日：1991-10-23

    申请人： Koichi Tsunemi ,  Masahiro Hosoya ,  Mitsunaga Saito ,  Hideyuki Nishizawa ,  Yoshimitsu Otaka ,  Mitsuharu Endo

    发明人： Koichi Tsunemi ,  Masahiro Hosoya ,  Mitsunaga Saito ,  Hideyuki Nishizawa ,  Yoshimitsu Otaka ,  Mitsuharu Endo

    IPC分类号： G03G15/00 ,  G03G5/00

    CPC分类号： G03G15/751

    摘要： A photoconductor is disclosed, which comprises a conductive cylindrical support which is substantially not hollowed, the conductive cylindrical support having a drive transferring mechanism coaxially and unifiedly provided on at least one of the end portions thereof, the conductive cylindrical support having a photoconductive layer on the outer periphery. The moment of inertia I (g . cm.sup.2) of the substantially not-hollowed conductive support is in the range of 0.4.ltoreq.I.ltoreq.140 (g . cm.sub.2), the diameter thereof being in the range from 0.5 to 2.0 cm. When the relation of C/(S . .omega.).ltoreq.0.4 (where S (cm.sup.2) is the square measure of the portion of the photoconductive layer on the photoconductor; C (cal/.degree.C.) is the heat capacity of the substantially not-hollowed cylindrical support; and .omega. (rad/s) is the rotating speed in development) is satisfied, high quality images can be readily and stably obtained without damages of the drive system.

    摘要翻译： 公开了一种光电导体，其包括基本上不中空的导电圆柱形支撑件，导电圆柱形支撑件具有同轴且统一地设置在其至少一个端部上的驱动传递机构，导电圆柱形支撑件在其上具有光电导层 外围。 基本上没有中空的导电载体的惯性矩I（g·cm 2）在0.4≤I≤140（g·cm 2）的范围内，其直径在0.5-2.0cm的范围内 。 当C /（S。ω）= 0.4（其中S（cm2））是光电导体上的光电导层部分的平方测量; C（cal /℃）是C / 基本上不空心的圆柱形支撑件;并且ω（rad / s）是显影中的转速），可以容易且稳定地获得高质量的图像，而不会损坏驱动系统。

    Nonvolatile semiconductor memory device
    8.
    发明授权
    Nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号：US08890234B2

    公开(公告)日：2014-11-18

    申请号：US13721860

    申请日：2012-12-20

    申请人： Masaya Terai ,  Shigeki Hattori ,  Hideyuki Nishizawa ,  Koji Asakawa ,  Tsukasa Tada

    发明人： Masaya Terai ,  Shigeki Hattori ,  Hideyuki Nishizawa ,  Koji Asakawa ,  Tsukasa Tada

    IPC分类号： H01L29/792 ,  H01L21/28 ,  H01L51/05 ,  H01L27/115 ,  H01L51/00

    CPC分类号： H01L27/11582 ,  G11C13/0016 ,  G11C13/004 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2213/71 ,  G11C2213/75 ,  H01L21/28282 ,  H01L29/4234 ,  H01L29/51 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518 ,  H01L29/792 ,  H01L29/7926 ,  H01L51/0078 ,  H01L51/0591

    摘要： A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film formed on the semiconductor layer; an organic molecular layer that is formed on the tunnel insulating film, and includes first organic molecules and second organic molecules having a smaller molecular weight than the first organic molecules, the first organic molecules each including a first alkyl chain or a first alkyl halide chain having one end bound to the tunnel insulating film, the first organic molecules each including a charge storage portion bound to the other end of the first alkyl chain or the first alkyl halide chain, the second organic molecules each including a second alkyl chain or a second alkyl halide chain having one end bound to the tunnel insulating film; a block insulating film formed on the organic molecular layer; and a control gate electrode formed on the block insulating film.

    摘要翻译： 实施例的非易失性半导体存储器件包括：半导体层; 形成在半导体层上的隧道绝缘膜; 形成在所述隧道绝缘膜上的有机分子层，并且包括第一有机分子和具有比所述第一有机分子分子量小的第二有机分子，所述第一有机分子各自包含第一烷基链或第一烷基卤链，所述第一烷基链或第一烷基卤链具有 所述第一有机分子各自包含结合到所述第一烷基链或所述第一烷基卤链的另一端的电荷存储部分，所述第二有机分子各自包含第二烷基链或第二烷基 卤化物链的一端与隧道绝缘膜结合; 形成在有机分子层上的块绝缘膜; 以及形成在所述块绝缘膜上的控制栅电极。