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    PROCESS FOR THE PRODUCTION OF A MWT SILICON SOLAR CELL
    2.
    发明申请
    PROCESS FOR THE PRODUCTION OF A MWT SILICON SOLAR CELL 审中-公开
    制造MWT硅太阳能电池的方法

    公开(公告)号：US20130074916A1

    公开(公告)日：2013-03-28

    申请号：US13428302

    申请日：2012-03-23

    申请人： Kenneth Warren Hang ,  Giovanna Laudisio ,  John McKean Oleksyn ,  Jason Kenneth Parsons ,  Rosalynne Sophie Watt

    发明人： Kenneth Warren Hang ,  Giovanna Laudisio ,  John McKean Oleksyn ,  Jason Kenneth Parsons ,  Rosalynne Sophie Watt

    IPC分类号： H01L31/18 ,  H01L31/0224

    CPC分类号： H01L31/18 ,  H01L31/022425 ,  H01L31/02245 ,  Y02E10/50

    摘要： A process for the production of a MWT silicon solar cell, wherein a conductive metal paste with no or only poor fire-through capability is applied, dried and fired to form a continuous metallization comprising a top set of conductive metal collector lines and a metallization of the inside of the holes of a p-type MWT silicon solar cell wafer, wherein the top set of conductive metal collector lines superimposes a bottom set of conductive metal collector lines on the front-side of the p-type MWT silicon solar cell wafer, said bottom set of conductive metal collector lines having no contact with the inside of the holes.

    摘要翻译： 一种用于生产MWT硅太阳能电池的方法，其中施加没有或仅仅具有差的穿透能力的导电金属浆料，干燥和烧制以形成连续的金属化，其包括顶部导电金属收集器线组和金属化 p型MWT硅太阳能电池晶片的孔的内部，其中顶层导电金属集电体线在p型MWT硅太阳能电池晶片的正面上叠加一组导电金属集电体线， 所述底部的导电金属集电器线组不与孔的内部接触。

    PROCESS FOR THE FORMATION OF A SILVER BACK ELECTRODE OF A PASSIVATED EMITTER AND REAR CONTACT SILICON SOLAR CELL
    4.
    发明申请
    PROCESS FOR THE FORMATION OF A SILVER BACK ELECTRODE OF A PASSIVATED EMITTER AND REAR CONTACT SILICON SOLAR CELL 审中-公开
    形成钝化发射体和后接触硅太阳能电池的银背电极的工艺

    公开(公告)号：US20130061918A1

    公开(公告)日：2013-03-14

    申请号：US13410555

    申请日：2012-03-02

    申请人： Kenneth Warren Hang ,  Giovanna Laudisio ,  Alistair Graeme Prince ,  Rosalynne Sophie Watt

    发明人： Kenneth Warren Hang ,  Giovanna Laudisio ,  Alistair Graeme Prince ,  Rosalynne Sophie Watt

    IPC分类号： H01L31/0224 ,  H01L31/18

    CPC分类号： H01B1/22 ,  C03C8/02 ,  C03C8/10 ,  C03C8/18 ,  H01L31/022425 ,  Y02E10/50

    摘要： A process for the formation of an electrically conductive silver back electrode of a PERC silicon solar cell comprising the steps: (1) providing a p-type silicon wafer having on its front-side an n-type emitter with an ARC layer thereon and on its back-side a perforated dielectric passivation layer with local BSF contacts at the places of the perforations, (2) applying and drying a silver paste to form a silver back electrode pattern connecting the local BSF contacts on the back-side of the silicon wafer, and (3) firing the dried silver paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the silver paste has no or only poor fire-through capability and comprises particulate silver and an organic vehicle.

    摘要翻译： 一种用于形成PERC硅太阳能电池的导电银背电极的方法，包括以下步骤：（1）提供在其正面上具有其上的ARC层的n型发射体和p型硅晶片的p型硅晶片， 其背面是在穿孔位置处具有局部BSF接触的穿孔电介质钝化层，（2）施加和干燥银膏以形成连接硅晶片背面上的局部BSF触点的银背电极图案 ，和（3）烧制干燥的银浆，由此晶片达到700-900℃的峰值温度，其中银浆没有或仅仅具有差的穿透能力，并且包括颗粒状银和有机载体。

    Process for the production of a MWT silicon solar cell
    5.
    发明授权
    Process for the production of a MWT silicon solar cell 有权
    生产MWT硅太阳能电池的工艺

    公开(公告)号：US09054242B2

    公开(公告)日：2015-06-09

    申请号：US13022799

    申请日：2011-02-08

    申请人： Kenneth Warren Hang ,  Giovanna Laudisio ,  Alistair Graeme Prince ,  Richard John Sheffield Young

    发明人： Kenneth Warren Hang ,  Giovanna Laudisio ,  Alistair Graeme Prince ,  Richard John Sheffield Young

    IPC分类号： H01L31/0224 ,  H01L31/18 ,  C03C8/02 ,  C03C8/10 ,  C03C8/24

    CPC分类号： H01L31/02245 ,  C03C8/02 ,  C03C8/10 ,  C03C8/24 ,  Y02E10/50

    摘要： A process for the production of a MWT silicon solar cell comprising the steps: (1) providing an n-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) a p-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel, (b) at least one particulate p-type dopant, and (c) an organic vehicle.

    摘要翻译： 一种用于生产MWT硅太阳能电池的方法，包括以下步骤：（1）提供n型硅晶片，其具有（i）在晶片的前侧和后侧之间形成通孔的孔，以及（ii） p型发射体在孔的整个前侧和内侧延伸，（2）将导电金属膏施加到硅晶片的孔中，至少提供孔的内部金属化，（3）干燥 施加的导电性金属糊料，（4）烧制干燥后的导电性金属糊料，由此晶片达到700〜900℃的峰值温度，其中导电性金属糊料没有或仅有差的穿透能力，并且包括（a ）至少一种选自银，铜和镍的颗粒状导电金属，（b）至少一种颗粒型p型掺杂剂，和（c）有机载体。

    PROCESS OF FORMING A GRID CATHODE ON THE FRONT-SIDE OF A SILICON WAFER
    6.
    发明申请
    PROCESS OF FORMING A GRID CATHODE ON THE FRONT-SIDE OF A SILICON WAFER 审中-公开
    在硅砂的正面形成网状阴极的方法

    公开(公告)号：US20110146781A1

    公开(公告)日：2011-06-23

    申请号：US12822466

    申请日：2010-06-24

    申请人： Giovanna Laudisio ,  Kenneth Warren Hang ,  Richard John Sheffield Young

    发明人： Giovanna Laudisio ,  Kenneth Warren Hang ,  Richard John Sheffield Young

    IPC分类号： H01L31/0224 ,  H01L31/18

    CPC分类号： H01B1/16 ,  C03C3/072 ,  C03C8/12 ,  C03C8/18 ,  H01L31/022425 ,  Y02E10/50

    摘要： A process for the production of a grid cathode on the front-side of a silicon wafer by applying and firing a metal paste on the silicon wafer in a front-side grid electrode pattern to form a seed grid cathode and subsequently subjecting the silicon wafer to a LIP process, wherein the metal paste comprises an organic vehicle and an inorganic content comprising (a) 90 to 98 wt.-% of at least one electrically conductive metal powder selected from the group consisting of nickel, copper and silver, and (b) 0.25 to 8 wt.-% of at least one glass frit selected from the group consisting of glass frits containing 47.5 to 64.3 wt.-% of PbO, 23.8 to 32.2 wt.-% of SiO2, 3.9 to 5.4 wt.-% of Al2O3, 2.8 to 3.8 wt.-% of TiO2 and 6.9 to 9.3 wt.-% of B2O3.

    摘要翻译： 一种通过在前面的栅极电极图案中在硅晶片上施加和烧制金属浆料来形成硅晶片正面的栅极的方法，以形成种子栅极阴极，随后使硅晶片 LIP方法，其中所述金属糊包括有机载体和无机含量，所述无机物含量包含（a）90至98重量％的至少一种选自镍，铜和银的导电金属粉末和（b ）0.25至8重量％的至少一种玻璃料，其选自含有47.5至64.3重量％的PbO的玻璃料，23.8至32.2重量％的SiO 2，3.9至5.4重量％ 的Al 2 O 3，2.8〜3.8重量％的TiO 2和6.9〜9.3重量％的B 2 O 3。

    PROCESS FOR THE PRODUCTION OF A MWT SILICON SOLAR CELL
    8.
    发明申请
    PROCESS FOR THE PRODUCTION OF A MWT SILICON SOLAR CELL 失效
    制造MWT硅太阳能电池的方法

    公开(公告)号：US20110139238A1

    公开(公告)日：2011-06-16

    申请号：US12963003

    申请日：2010-12-08

    申请人： Kenneth Warren Hang ,  Giovanna Laudisio ,  Alistair Graeme Prince ,  Richard John Sheffield Young

    发明人： Kenneth Warren Hang ,  Giovanna Laudisio ,  Alistair Graeme Prince ,  Richard John Sheffield Young

    IPC分类号： H01L31/02 ,  H01L31/18

    CPC分类号： C03C8/02 ,  C03C8/12 ,  C03C8/16 ,  C03C8/18 ,  H01B1/22 ,  H01L31/02245 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/928

    摘要： A process for the production of a MWT silicon solar cell comprising the steps: (1) providing a p-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) an n-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel and (b) an organic vehicle.

    摘要翻译： 一种用于生产MWT硅太阳能电池的方法，包括以下步骤：（1）提供p型硅晶片，其具有（i）在晶片的前侧和后侧之间形成通孔的孔，以及（ii） n型发射体在孔的整个前侧和内侧延伸，（2）将导电金属膏施加到硅晶片的孔中，至少提供孔的内部金属化，（3）干燥 施加的导电性金属糊料，（4）烧制干燥后的导电性金属糊料，由此晶片达到700〜900℃的峰值温度，其中导电性金属糊料没有或仅有差的穿透能力，并且包括（a ）至少一种选自银，铜和镍的颗粒状导电金属和（b）有机载体。