摘要:
A film, based on polyimide or epoxy, is laminated onto a surface of a substrate under a vacuum, so that the film closely covers the surface and adheres thereto. Contact surfaces to be formed on the surface are uncovered by opening windows in the film. A contact is established in a plane manner between each uncovered contact surface and a layer of metal. This establishes a large-surface contact providing high current density for power semiconductor chips.
摘要:
A film, based on polyimide or epoxy, is laminated onto a surface of a substrate under a vacuum, so that the film closely covers the surface and adheres thereto. Contact surfaces to be formed on the surface are uncovered by opening windows in the film. A contact is established in a plane manner between each uncovered contact surface and a layer of metal. This establishes a large-surface contact providing high current density for power semiconductor chips.
摘要:
At least one film composite is laminated on a surface of at least one electrical component. The film composite includes at least one electrically-conducting plastic film with at least one electrically conducting conductor. The electrically-conducting plastic film has a high-ohmic resistance. This method may be used in planar large-surface electrical contacting technology for the production of modules with power semiconductors, where an electrical contacting of the components is achieved by the plastic films. A low lateral electrical conductivity is achieved, such that an electrical charging of the plastic films required for the contacting technology is prevented on operation of the component or the module.
摘要:
At least one film composite is laminated on a surface of at least one electrical component. The film composite includes at least one electrically-conducting plastic film with at least one electrically conducting conductor. The electrically-conducting plastic film has a high-ohmic resistance. This method may be used in planar large-surface electrical contacting technology for the production of modules with power semiconductors, where an electrical contacting of the components is achieved by the plastic films. A low lateral electrical conductivity is achieved, such that an electrical charging of the plastic films required for the contacting technology is prevented on operation of the component or the module.