公开(公告)号：US08222821B2

公开(公告)日：2012-07-17

申请号：US12145850

申请日：2008-06-25

Applicant: Keun-Hee Bai ,  Yoon-Jae Kim ,  Yong-Jin Kim

Inventor： Keun-Hee Bai ,  Yoon-Jae Kim ,  Yong-Jin Kim

IPC: H05B31/26

CPC classification number: H05H1/46 ,  H01J37/32082 ,  H01J37/32183

Abstract: A pulse plasma matching system includes an RF matching box configured to receive an RF power pulse generated by an RF power source, configured to perform a plasma impedance matching, and configured to apply the RF power pulse to a process chamber, and a network analyzer configured to measure an impedance of plasma generated in a process chamber. A controller is configured to generate a capacitance control signal corresponding to a plasma impedance value measured by the network analyzer, configured to supply the capacitance control signal to the RF matching box, and configured to generate an impedance matching compensation pulse, and a phase shifter is configured to receive the impedance matching compensation pulse and to shift a phase of the impedance matching compensation pulse to synchronize the impedance matching compensation pulse to the RF power pulse.

Abstract translation: 脉冲等离子体匹配系统包括：RF匹配盒，被配置为接收由RF电源产生的RF功率脉冲，被配置为执行等离子体阻抗匹配，并且被配置为将RF功率脉冲施加到处理室;以及网络分析器， 以测量在处理室中产生的等离子体的阻抗。 控制器被配置为产生对应于由网络分析器测量的等离子体阻抗值的电容控制信号，其被配置为向RF匹配箱提供电容控制信号，并且被配置为产生阻抗匹配补偿脉冲，并且移相器是 被配置为接收阻抗匹配补偿脉冲并且移动阻抗匹配补偿脉冲的相位以将阻抗匹配补偿脉冲同步到RF功率脉冲。

公开(公告)号：US20100151599A1

公开(公告)日：2010-06-17

申请号：US12654184

申请日：2009-12-14

Applicant: Keun-Hee Bai ,  Yong-Jin Kim

Inventor： Keun-Hee Bai ,  Yong-Jin Kim

IPC: H01L21/66

CPC classification number: H01L22/12 ,  H01L22/26

Abstract: A method of manufacturing a semiconductor device includes depositing material on a wafer in a process chamber to form a thin film on the wafer, a by-product layer being simultaneously formed on an inner part of the process chamber, monitoring a change in thickness or mass of the by-product layer on the inner part of the process chamber during a process in the process chamber by using a QCM installed in the process chamber, and determining an end point of the process in the process chamber based on the monitored change in thickness or mass of the by-product layer in the process chamber.

Abstract translation: 制造半导体器件的方法包括在处理室中的晶片上沉积材料以在晶片上形成薄膜，在处理室的内部同时形成副产物层，监测厚度或质量的变化 通过使用安装在处理室中的QCM在处理室的处理过程中处理室内部的副产物层，以及基于所监测的厚度变化来确定处理室中的处理的终点 或处理室中副产物层的质量。

公开(公告)号：US07705973B2

公开(公告)日：2010-04-27

申请号：US12151516

申请日：2008-05-07

Applicant: Keun-Hee Bai ,  Yong-Jin Kim

Inventor： Keun-Hee Bai ,  Yong-Jin Kim

IPC: G01J3/443 ,  H05H1/00

CPC classification number: G01J3/443 ,  H01J37/32935 ,  H01J37/32972

Abstract: Provided are methods and systems for monitoring a state of a plasma chamber. In the method, an optical characteristic of plasma generated in a plasma chamber including a window is measured in a predetermined measurement wavelength band. A process status index (PSI) is extracted from the measured optical characteristic. A state of the plasma chamber is evaluated by analyzing the extracted PSI. The optical characteristic of the plasma is measured in the predetermined measurement wavelength band in which a transmittance of light passing through the window is substantially independent of a wavelength of the light.

Abstract translation: 提供了用于监测等离子体室的状态的方法和系统。 在该方法中，在预定的测量波长带中测量在包括窗口的等离子体室中产生的等离子体的光学特性。 从测量的光学特性中提取过程状态指数（PSI）。 通过分析所提取的PSI来评估等离子体室的状态。 在通过窗口的光的透射率基本上与光的波长无关的预定测量波长带中测量等离子体的光学特性。

公开(公告)号：US20090000942A1

公开(公告)日：2009-01-01

申请号：US12145850

申请日：2008-06-25

Applicant: Keun-Hee Bai ,  Yoon-Jae Kim ,  Yong-Jin Kim

Inventor： Keun-Hee Bai ,  Yoon-Jae Kim ,  Yong-Jin Kim

IPC: B01J19/08 ,  C23C14/34 ,  C23F1/08

CPC classification number: H05H1/46 ,  H01J37/32082 ,  H01J37/32183

Abstract: A pulse plasma matching system includes an RF matching box configured to receive an RF power pulse generated by an RF power source, configured to perform a plasma impedance matching, and configured to apply the RF power pulse to a process chamber, and a network analyzer configured to measure an impedance of plasma generated in a process chamber. A controller is configured to generate a capacitance control signal corresponding to a plasma impedance value measured by the network analyzer, configured to supply the capacitance control signal to the RF matching box, and configured to generate an impedance matching compensation pulse, and a phase shifter is configured to receive the impedance matching compensation pulse and to shift a phase of the impedance matching compensation pulse to synchronize the impedance matching compensation pulse to the RF power pulse.

Abstract translation: 脉冲等离子体匹配系统包括：RF匹配盒，被配置为接收由RF电源产生的RF功率脉冲，被配置为执行等离子体阻抗匹配，并且被配置为将RF功率脉冲施加到处理室;以及网络分析器， 以测量在处理室中产生的等离子体的阻抗。 控制器被配置为产生对应于由网络分析器测量的等离子体阻抗值的电容控制信号，其被配置为向RF匹配箱提供电容控制信号，并且被配置为产生阻抗匹配补偿脉冲，并且移相器是 被配置为接收阻抗匹配补偿脉冲并且移动阻抗匹配补偿脉冲的相位以将阻抗匹配补偿脉冲同步到RF功率脉冲。

公开(公告)号：US20080278721A1

公开(公告)日：2008-11-13

申请号：US12151516

申请日：2008-05-07

Applicant: Keun-Hee Bai ,  Yong-Jin Kim

Inventor： Keun-Hee Bai ,  Yong-Jin Kim

IPC: G01J3/443

CPC classification number: G01J3/443 ,  H01J37/32935 ,  H01J37/32972

Abstract: Provided are methods and systems for monitoring a state of a plasma chamber. In the method, an optical characteristic of plasma generated in a plasma chamber including a window is measured in a predetermined measurement wavelength band. A process status index (PSI) is extracted from the measured optical characteristic. A state of the plasma chamber is evaluated by analyzing the extracted PSI. The optical characteristic of the plasma is measured in the predetermined measurement wavelength band in which a transmittance of light passing through the window is substantially independent of a wavelength of the light.

Abstract translation: 提供了用于监测等离子体室的状态的方法和系统。 在该方法中，在预定的测量波长带中测量在包括窗口的等离子体室中产生的等离子体的光学特性。 从测量的光学特性中提取过程状态指数（PSI）。 通过分析所提取的PSI来评估等离子体室的状态。 在通过窗口的光的透射率基本上与光的波长无关的预定测量波长带中测量等离子体的光学特性。

公开(公告)号：US08651217B2

公开(公告)日：2014-02-18

申请号：US13191879

申请日：2011-07-27

Applicant: Yong-Jin Kim ,  Seung-Won Kim ,  Kong-Sup Jung ,  Hyo-Seok Kim

Inventor： Yong-Jin Kim ,  Seung-Won Kim ,  Kong-Sup Jung ,  Hyo-Seok Kim

IPC: B60K5/12

CPC classification number: B60K5/1241 ,  B60K5/04 ,  B60K17/24 ,  B62D21/11

Abstract: A structure of an engine mount is provided for a vehicle in which an engine is disposed in the front of the vehicle, a front wheel is driven, and the engine is integrally coupled with a transmission to be seated horizontally on a vehicle body in a transverse mounting direction. The structure may include a driveshaft coupled to receive the driving force of the engine through the transmission and penetrate a center bearing through a bearing bracket fixed to the engine, a subframe as a plate shape coupled to the vehicle body in a rear lower part of the engine and coupled to a lower part of the transmission through a main roll rod mounted on the front, and a sub-roll rod having one end connected to the subframe and the other end connected to the bearing bracket.

Abstract translation: 发动机支架的结构为发动机设置在车辆的前部而被驱动的车辆提供，并且发动机与变速器一体地联接，以使车身横向放置在横向 安装方向。 该结构可以包括被连接以通过传动装置接收发动机的驱动力的驱动轴，并通过固定在发动机上的轴承架穿过中心轴承，将副车架作为联接到车身的板形在后部的下部 发动机，并且通过安装在前部的主辊杆耦合到变速器的下部;以及副辊杆，其一端连接到副车架，另一端连接到轴承座。

公开(公告)号：US20130242680A1

公开(公告)日：2013-09-19

申请号：US13827797

申请日：2013-03-14

Applicant: JAE-JUN LEE ,  Do-Hyung Kim ,  Yong-Jin Kim ,  Bo-Ra Kim ,  Jeong-Hoon Baek ,  Kwang-Seop Kim ,  Da-Ae Heo

Inventor： JAE-JUN LEE ,  Do-Hyung Kim ,  Yong-Jin Kim ,  Bo-Ra Kim ,  Jeong-Hoon Baek ,  Kwang-Seop Kim ,  Da-Ae Heo

IPC: G11C7/00

CPC classification number: H03K19/0005 ,  G11C5/04 ,  G11C7/00

Abstract: A memory module includes a command/address (CA) register, memory devices, and a module resistor unit mounted on a circuit board. The centrally disposed CA register drive the memory devices one or more internal CA signal(s) to arrangements of memory devices using multiple CA transmission lines, wherein the multiple internal CA transmission lines are commonly terminated in the module resistor unit.

Abstract translation: 存储器模块包括命令/地址（CA）寄存器，存储器件和安装在电路板上的模块电阻器单元。 集中设置的CA寄存器使用多个CA传输线将存储器件一个或多个内部CA信号驱动到存储器件的布置，其中多个内部CA传输线通常在模块电阻器单元中端接。

公开(公告)号：US08288898B2

公开(公告)日：2012-10-16

申请号：US12786919

申请日：2010-05-25

Applicant: Jae-Woo Jun ,  Jun-Kun Choi ,  Hwa-Young Oh ,  Yong-Jin Kim ,  Kyung-Ho Lee ,  Seok-Jun Park ,  Kwang-Hyung Lee ,  Je-Hyun Bang

Inventor： Jae-Woo Jun ,  Jun-Kun Choi ,  Hwa-Young Oh ,  Yong-Jin Kim ,  Kyung-Ho Lee ,  Seok-Jun Park ,  Kwang-Hyung Lee ,  Je-Hyun Bang

IPC: H02K33/18 ,  H02K33/16 ,  H02K33/00

CPC classification number: H02K33/16

Abstract: A linear vibrator is disclosed. In accordance with an embodiment of the present invention, the linear vibrator includes a base, a coil unit, which is coupled to the base, a magnet, which is coupled to the coil unit such that the magnet can move relatively with respect to the coil unit, and a leaf spring, which is interposed between the magnet and the base and includes a plurality of plate-shaped members having center portions thereof being separated from one another and both respective ends thereof being coupled to one another. Thus, the linear vibrator can increase the range of displacement in the leaf spring and increase the magnitude of vibration in the linear vibrator.

Abstract translation: 公开了线性振动器。 根据本发明的实施例，线性振动器包括底座，联接到基座的线圈单元，耦合到线圈单元的磁体，使得磁体可相对于线圈相对移动 单元和片簧，其插入在所述磁体和所述基座之间，并且包括多个板状构件，所述多个板状构件的中心部分彼此分离并且其两个端部彼此连接。 因此，线性振动器可以增加板簧中的位移范围并增加线性振动器中振动的大小。

公开(公告)号：US08158501B2

公开(公告)日：2012-04-17

申请号：US12967897

申请日：2010-12-14

Applicant: Yong-Jin Kim ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Dong-Kun Lee

Inventor： Yong-Jin Kim ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Dong-Kun Lee

IPC: H01L21/02

CPC classification number: H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/20 ,  H01L33/38

Abstract: The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor layer from the openings. According to the present invention, the manufacturing method can be simplified and grow a high quality compound semiconductor layer rapidly, simply and inexpensively, as compared with a conventional ELO (Epitaxial Lateral Overgrowth) method or a method for forming a compound semiconductor layer on a metal layer. And, the metal layer serves as one electrode of a light emitting device and a light reflecting film to provide a light emitting device having reduced power consumption and high light emitting efficiency.

Abstract translation: 化合物半导体基板及其制造方法技术领域本发明涉及化合物半导体基板及其制造方法。 本发明提供一种制造方法，其在基板上涂布球形球，在球形球之间形成金属层，去除球形球以形成开口，并从开口生长化合物半导体层。 根据本发明，与传统的ELO（外延横向生长）方法或在金属上形成化合物半导体层的方法相比，可以简化和简单且廉价地生产高质量的化合物半导体层 层。 并且，金属层用作发光器件和光反射膜的一个电极，以提供具有降低的功率消耗和高发光效率的发光器件。

公开(公告)号：US07961204B2

公开(公告)日：2011-06-14

申请号：US11853684

申请日：2007-09-11

Applicant: Yong-Jin Kim

Inventor： Yong-Jin Kim

IPC: G09G5/10 ,  G09G3/28

CPC classification number: G09G3/2803 ,  G09G3/2029 ,  G09G3/2946 ,  G09G2310/066 ,  G09G2320/0238 ,  G09G2320/0271 ,  G09G2320/0606 ,  G09G2320/0626

Abstract: A gray-scale representation method for a plasma display panel, which method includes arranging, in time sequence, a plurality of subfields each having a brightness weight and achieving gray-scale representation by a combination of the subfields, each subfield including an address period and a sustain period. In the gray-scale representation method, the number of sustain pulses for each subfield is determined so that a light generated from the difference of the number of sustain pulses between two adjacent gray scales can be greater than a light discharged in the address period, when the number of subfields for the higher one of the two adjacent gray scales is less than that for the lower one. The reversion of gray scales that occurs when the address light is increased as high as the sustain light can be eliminated to achieve correct gray-scale representation. A smoother gray-scale representation can be achieved with reduced power consumption by adjusting the difference of the number of sustain pulses between the two adjacent gray scales in consideration of the address light.

Abstract translation: 一种用于等离子体显示面板的灰度表示方法，该方法包括按时间顺序排列多个子场，每个子场具有亮度权重，并通过子场的组合实现灰度表示，每个子场包括地址周期和 维持期 在灰阶表示方法中，确定每个子场的维持脉冲数，使得从两个相邻灰度级之间的维持脉冲数的差异产生的光可以大于在寻址周期中放出的光，当 两个相邻灰度中较高的一个灰度级的子场数小于下一个灰度级的子场数。 当可以消除地址光增加到持续光的高度时发生的灰度的反转，以获得正确的灰度级表示。 考虑到地址光，可以通过调整两个相邻灰度级之间的维持脉冲数量的差异来降低功耗，从而实现更平滑的灰度表示。